LRC BAP63-03 Silicon pin diode Datasheet

LESHAN RADIO COMPANY, LTD.
Silicon PIN diode
BAP63 – 03
FEATURES
· High speed switching for RF signals
· Low diode capacitance
· Low diode forward resistance
· Very low series inductance
· For applications up to 3 GHz.
APPLICATIONS
· RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD323 small SMD plastic package.
1
2
SOD523 SC-79
1
CATHODE
2
ANODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
I
SYMBOL
PARAMETER
VR
IF
continuous reverse voltage
continuous forward current
CONDITIONS
P tot
T stg
total power dissipation
storage temperature
Tj
junction temperature
T s < 90°C
MIN.
MAX.
UNIT
–
–
50
100
V
mA
–
-65
500
+150
mW
°C
-65
+150
°C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
IR
forward voltage
reverse current
I F =50 mA
V R =35 V
0.95
–
1.1
10
V
nA
Cd
diode capacitance
0.4
0.35
–
–
pF
pF
V R = 20 V; f = 1 MHz
I F = 0.5 mA; f = 100 MHz; note 1
0.27
2.5
0.32
3.5
pF
Ω
I F = 1 mA; f = 100 MHz; note 1
I F = 10 mA; f = 100 MHz; note 1
1.95
1.17
3
1.8
Ω
Ω
I F = 100 mA; f = 100 MHz; note 1
V R = 0; f = 900 MHz
0.9
15.4
1.5
–
Ω
dB
V R = 0; f = 1800 MHz
V R = 0; f = 2450 MHz
10.1
7.8
–
–
dB
dB
I F = 0.5 mA; f = 900 MHz
I F = 0.5 mA; f = 1800 MHz
0.21
0.28
–
–
dB
dB
I F = 0.5 mA; f = 2450 MHz
I F = 1 mA; f = 900 MHz
0.38
0.18
–
–
dB
dB
I F = 1 mA; f = 1800 MHz
I F = 1 mA; f = 2450 MHz
0.26
0.35
–
–
dB
dB
I F = 10 mA; f = 900 MHz
I F = 10 mA; f = 1800 MHz
0.13
0.20
–
–
dB
dB
I F = 10 mA; f = 2450 MHz
I F = 100 mA; f = 900 MHz
0.30
0.10
–
–
dB
dB
I F = 100mA; f = 1800 MHz
I F = 100 mA; f = 2450 MHz
0.18
0.28
–
–
dB
dB
rD
|s 21|
diode forward resistance
2
|s 21| 2
|s 21|
2
isolation
insertion loss
insertion loss
|s 21| 2
insertion loss
|s 21| 2
insertion loss
V R = 0; f = 1 MHz
V R = 1 V; f = 1 MHz
S25–1/2
LESHAN RADIO COMPANY, LTD.
BAP63-03
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue)
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
τL
charge carrier life time
when switched from I F =10 mA to
I R = 6 mA; R L = 100 Ω;
310
–
ns
1.5
–
nH
measured at I R =3 mA
L
series inductance
S
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering-point
120
K/W
500
10
f = 100 MHz; T j =25°C
C d (pF)
r D( Ω)
400
1
300
200
100
10 -1
f = 1 MHz; T j =25°C
10 -1
1
10 2
10
0
0
I F (mA )
4
8
12
16
20
VR(V)
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
Fig.1 Forward resistance as a function of
forward current; typical values.
0
0
(1)
(2)
(3)
(4)
- 10
|s 21| 2(dB)
|s 21| 2(dB)
-0.1
I F =100 mA.
I F =10 mA.
I F = 1 mA.
I F = 0.5 mA.
-0.2
- 20
-0.3
- 30
-0.4
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Diode zero biased and inserted in
series with a 50 Ω stripline circuit.
Tamb =25°C.
Tamb =25°C.
-0.5
0
1
2
3
f (GHz )
Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state
as a function of frequency; typical values.
- 40
0
1
2
3
f (GHz )
Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a
function of frequency; typical values.
S25–2/2