APT6029BFLL
APT6029SFLL
600V 21A 0.290Ω
POWER MOS 7
R
FREDFET
BFLL
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
SFLL
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
TO-247
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6029BFLL_SFLL
UNIT
Drain-Source Voltage
600
Volts
ID
Continuous Drain Current @ TC = 25°C
21
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
300
Watts
Linear Derating Factor
2.40
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
84
-55 to 150
°C
300
Amps
21
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
30
4
mJ
1210
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 10.5A)
TYP
MAX
UNIT
Volts
0.290
Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
9-2004
Characteristic / Test Conditions
050-7133 Rev C
Symbol
APT6029BFLL_SFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
3
RESISTIVE SWITCHING
VGS = 15V
VDD = 300V
ID = 21A @ 25°C
RG = 1.6Ω
4
INDUCTIVE SWITCHING @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
225
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
VDD = 400V, VGS = 15V
nC
ns
90
ID = 21A, RG = 5Ω
6
INDUCTIVE SWITCHING @ 125°C
µJ
360
VDD = 400V, VGS = 15V
ID = 21A, RG = 5Ω
UNIT
pF
47
65
13
36
9
5
23
VDD = 300V
Fall Time
MAX
2615
420
ID = 21A @ 25°C
Turn-off Delay Time
tf
TYP
VGS = 10V
Rise Time
td(off)
MIN
Test Conditions
110
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
Characteristic / Test Conditions
MIN
TYP
MAX
21
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
84
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -21A)
1.3
Volts
dv/
Peak Diode Recovery
15
V/ns
dt
dv/
5
dt
t rr
Reverse Recovery Time
(IS = -21A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
515
Q rr
Reverse Recovery Charge
(IS = -21A, di/dt = 100A/µs)
Tj = 25°C
1.78
Tj = 125°C
5.17
IRRM
Peak Recovery Current
(IS = -21A, di/dt = 100A/µs)
Tj = 25°C
11.9
Tj = 125°C
18.5
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
MIN
TYP
MAX
0.22
40
0.9
0.35
0.7
0.25
0.5
0.20
0.15
0.3
0.10
0.1
0.05
0
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7133 Rev C
9-2004
0.45
0.30
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-5
°C/W
4 Starting Tj = +25°C, L = 5.49mH, RG = 25Ω, Peak IL = 21A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID21A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.40
UNIT
SINGLE PULSE
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT6029BFLL_SFLL
60
RC MODEL
Junction
temp. (°C)
0.161
0.00994F
Power
(watts)
0.259
0.236F
ID, DRAIN CURRENT (AMPERES)
VGS =15 &10V
50
8V
7V
40
30
6.5
20
6V
10
5.5V
Case temperature. (°C)
5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
80
VDS> ID (ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
50
40
30
TJ = +125°C
20
TJ = +25°C
10
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
V
NORMALIZED TO
= 10V @ I = 10.5A
GS
D
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 10.5A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.30
1.15
25
0.0
-50
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
9-2004
0
TJ = -55°C
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
050-7133 Rev C
ID, DRAIN CURRENT (AMPERES)
70
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
VDS=100V
12
VDS=250V
VDS=400V
8
4
0
10
20 30 40 50 60 70 80 90 100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
1,000
Coss
100
Crss
10mS
= 21A
D
C, CAPACITANCE (pF)
100µS
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Ciss
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
50
0
APT6029BFLL_SFLL
10,000
84
50
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
50
td(off)
40
V
30
DD
R
G
= 400V
tr and tf (ns)
td(on) and td(off) (ns)
40
= 5Ω
T = 125°C
J
L = 100µH
20
G
= 400V
= 5Ω
tr
T = 125°C
10
td(on)
0
5
0
10
15
20
25
30
35
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
15
20
25
30
35
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
700
DD
R
600
G
= 400V
5
V
700
= 5Ω
I
J
L = 100µH
Eon
E ON includes
diode reverse recovery.
400
300
200
Eoff
100
SWITCHING ENERGY (µJ)
T = 125°C
500
0
0
10
800
V
SWITCHING ENERGY (µJ)
DD
R
J
0
9-2004
V
20
L = 100µH
10
050-7133 Rev C
tf
30
DD
D
= 400V
= 21A
Eoff
T = 125°C
J
600
L = 100µH
E ON includes
500
diode reverse recovery.
Eon
400
300
200
100
0
5
10
15
20
25
30
35
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT6029BFLL_SFLL
Gate Voltage
10 %
90%
TJ = 125 C
td(on)
Gate Voltage
T = 125 C
J
t
d(off)
tr
Drain Voltage
Drain Current
90%
90%
tf
5%
5%
10%
Drain Current
Drain Voltage
10 %
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF60
ID
V DD
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
9-2004
4.50 (.177) Max.
050-7133 Rev C
0.46 (.018)
0.56 (.022) {3 Plcs}
2.87 (.113)
3.12 (.123)