Am29LV641G Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29GL064A supersedes Am29LV641G and is the factory-recommended migration path. Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. June 2005 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary. For More Information Please contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions. Publication Number 25295 Revision A Amendment +3 Issue Date June 14, 2005 THIS PAGE LEFT INTENTIONALLY BLANK. ADVANCE INFORMATION Am29LV641G 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control This product has been retired and is not recommended for designs. For new and current designs, S29GL064A supersedes Am29LV641G and is the factory-recommended migration path. Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES ■ Single power supply operation — 2.7 to 3.6 volt read, erase, and program operations ■ SecSi™ (Secured Silicon) Sector region — 128-word sector for permanent, secure identification through an 8-word random Electronic Serial Number — May be programmed and locked at the factory or by the customer — Accessible through a command sequence ■ VersatileI/O™ control — Device generates data output voltages and tolerates data input voltages as determined by the voltage on the VIO pin ■ Manufactured on 0.18 µm process technology ■ Flexible sector architecture — One hundred twenty-eight 32 Kword sectors ■ Compatibility with JEDEC standards — Pinout and software compatible with single-power supply Flash standard ■ Package options — 48-pin TSOP and Reverse TSOP (LV641GH/L only) — 63-ball Fine-Pitch BGA (LV640GU only) — 64-ball Fortified BGA (LV640GU only) ■ Minimum 1 million erase cycle guarantee per sector ■ 20-year data retention at 125°C PERFORMANCE CHARCTERISTICS ■ High performance — Access time ratings as fast as 55 ns ■ Ultra low power consumption (typical values at 3.0 V, 5 MHz) — 9 mA typical active read current — 26 mA typical erase/program current — 200 nA typical standby mode current ■ Program and erase performance (VHH not applied to the ACC input pin) — Word program time: 7 µs typical — Sector erase time: 0.6 s typical for each 32 Kword sector SOFTWARE AND HARDWARE FEATURES ■ Hardware features — Hardware reset input (RESET#): resets device for new operation — WP# input: protects first or last 32 Kword sector regardless of sector protection settings (LV641GH/L only) — ACC input: Accelerates programming time for higher throughput during system production ■ Software features — Program Suspend & Resume: read other sectors before programming operation is completed — Sector Group Protection: VCC-level method of preventing program or erase operations within a sector — Temporary Sector Group Unprotect: VID-level method of changing in previously locked sectors — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices — Erase Suspend/Erase Resume: read/program other sectors before an erase operation is complete — Data# Polling and toggle bits provide erase and programming operation status — Unlock Bypass Program command reduces overall multiple-word programming time This document contains information on a product under development at Advance Micro Devices. The information is intended to help you evaluate this product. Do not design in the product without contacting the factory. AMD reserves the right to change or discontinue work on this proposed product without notice. Publication# 25295 Rev: A Amendment/+3 Issue Date: June 14, 2005 Refer to AMD’s Website (www.amd.com) for the latest information. A D V A N C E I N F O R M A T I O N GENERAL DESCRIPTION The Am29LV641G are 64 Mbit, 3.0 volt (3.0 V to 3.6 V) single power supply flash memory devices organized as 4,194,304 words. Data appears on DQ15–DQ0. These devices are designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers. Access times of 55 regulated volage and 70 ns full voltage range are available for applications where VIO ≥ V CC . The Am29LV641GH/L is offered in 48-pin T S O P a n d r eve r s e T S O P p a ck a g e s. T h e Am29LV640GU is offered in a 63-ball Fine-pitch BGA package, and a 64-ball Fortified BGA. To eliminate bus contention each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. Each device requires only a single 3.0 volt power supply (2.7 V to 3.6 V) for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timing. Register contents serve as inputs to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The VersatileI/O™ (VIO) control allows the host system to set the voltage levels that the device generates at its data outputs and the voltages tolerated at its data inputs to the same voltage level that is asserted on the VIO pin. This allows the device to operate in 1.8 V or 3 V system environment as required. The host system can detect whether a program or erase operation is complete by reading the DQ7 (Data# Polling) or DQ6 (toggle) status bits. After a program or erase cycle has been completed, the de5 vice is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low V CC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The Program Suspend/Program Resume feature enables the host system to pause a program operation in a given sector to read any other sector and then complete the program operation. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read boot-up firmware from the Flash memory device. The device offers a standby mode as a power-saving feature. Once the system places the device into the standby mode power consumption is greatly reduced. The SecSi™ (Secured Silicon) Sector provides an minimum 128-word area for code or data that can be permanently protected. Once this sector is protected, no further programming or erasing within the sector can occur. The Write Protect (WP#) feature protects the first or last sector by asserting a logic low on the WP# pin. The protected sector will still be protected even during accelerated programming. (Am29LV641GH/L only) The accelerated program (ACC) feature allows the system to program the device at a much faster rate. When ACC is pulled high to VHH, the device enters the Unlock Bypass mode, enabling the user to reduce the time needed to do the program operation. This feature is intended to increase factory throughput during system production, but may also be used in the field if desired. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunnelling. The data is programmed using hot electron injection. Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N TABLE OF CONTENTS Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5 Special Package Handling Instructions .................................... 7 Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9 Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 10 DQ7: Data# Polling ................................................................. 30 Figure 6. Data# Polling Algorithm .................................................. 30 DQ6: Toggle Bit I .................................................................... 30 Figure 7. Toggle Bit Algorithm........................................................ 31 DQ2: Toggle Bit II ................................................................... 32 Reading Toggle Bits DQ6/DQ2 ............................................... 32 DQ5: Exceeded Timing Limits ................................................ 32 DQ3: Sector Erase Timer ....................................................... 32 Table 1. Device Bus Operations .....................................................10 Table 11. Write Operation Status ................................................... 33 VersatileI/O™ (VIO) Control .................................................... 10 Requirements for Reading Array Data ................................... 10 Writing Commands/Command Sequences ............................ 11 Absolute Maximum Ratings . . . . . . . . . . . . . . . . 34 Figure 8. Maximum Negative Overshoot Waveform ..................... 34 Figure 9. Maximum Positive Overshoot Waveform....................... 34 Accelerated Program Operation ......................................................11 Autoselect Functions .......................................................................11 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 34 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 35 Standby Mode ........................................................................ 11 Automatic Sleep Mode ........................................................... 11 RESET#: Hardware Reset Pin ............................................... 11 Output Disable Mode .............................................................. 12 Figure 10. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) ........................................... 36 Figure 11. Typical ICC1 vs. Frequency ............................................ 36 Table 2. Sector Address Table ........................................................12 Autoselect Mode ..................................................................... 16 Table 3. Autoselect Codes, (High Voltage Method) ......................16 Sector Group Protection and Unprotection ............................. 17 Table 4. Sector Group Protection/Unprotection Address Table .....17 Write Protect (WP#) ................................................................ 18 Temporary Sector Group Unprotect ....................................... 18 Figure 1. Temporary Sector Group Unprotect Operation................ 18 Figure 2. In-System Sector Group Protect/Unprotect Algorithms ... 19 SecSi™ (Secured Silicon) Sector Flash Memory Region ....... 20 Table 5. SecSi Sector Contents ......................................................20 Figure 3. SecSi Sector Protect Verify.............................................. 21 Hardware Data Protection ...................................................... 21 Low VCC Write Inhibit .......................................................................21 Write Pulse “Glitch” Protection ........................................................21 Logical Inhibit ..................................................................................21 Power-Up Write Inhibit ....................................................................21 Common Flash Memory Interface (CFI) . . . . . . . 21 Table 6. CFI Query Identification String .......................................... 22 Table 7. System Interface String..................................................... 22 Table 8. Device Geometry Definition .............................................. 22 Table 9. Primary Vendor-Specific Extended Query ........................ 24 Command Definitions . . . . . . . . . . . . . . . . . . . . . 24 Reading Array Data ................................................................ 24 Reset Command ..................................................................... 25 Autoselect Command Sequence ............................................ 25 Enter SecSi Sector/Exit SecSi Sector Command Sequence .. 25 Word Program Command Sequence ..................................... 25 Unlock Bypass Command Sequence ..............................................26 Figure 4. Program Operation .......................................................... 26 Chip Erase Command Sequence ........................................... 26 Sector Erase Command Sequence ........................................ 27 Erase Suspend/Erase Resume Commands ........................... 27 Figure 5. Erase Operation............................................................... 28 Command Definitions ............................................................. 29 Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Figure 12. Test Setup.................................................................... 37 Table 12. Test Specifications ......................................................... 37 Key to Switching Waveforms. . . . . . . . . . . . . . . . 37 Figure 13. Input Waveforms and Measurement Levels...................................................................... 37 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 38 Read-Only Operations ........................................................... 38 Figure 14. Read Operation Timings ............................................... 38 Hardware Reset (RESET#) .................................................... 39 Figure 15. Reset Timings ............................................................... 39 Erase and Program Operations .............................................. 40 Figure 16. Program Operation Timings.......................................... Figure 17. Accelerated Program Timing Diagram.......................... Figure 18. Chip/Sector Erase Operation Timings .......................... Figure 19. Data# Polling Timings (During Embedded Algorithms)...................................................... Figure 20. Toggle Bit Timings (During Embedded Algorithms)...................................................... Figure 21. DQ2 vs. DQ6................................................................. 41 41 42 43 44 44 Temporary Sector Unprotect .................................................. 45 Figure 22. Temporary Sector Group Unprotect Timing Diagram ... 45 Figure 23. Sector Group Protect and Unprotect Timing Diagram .. 46 Alternate CE# Controlled Erase and Program Operations ..... 47 Figure 24. Alternate CE# Controlled Write (Erase/Program) Operation Timings .............................................. 48 Erase And Programming Performance . . . . . . . 49 Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 49 TSOP & FBGA Pin Capacitance. . . . . . . . . . . . . . 49 Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 FBE063—63-Ball Fine-Pitch Ball Grid Array (FBGA) 11 x 12 mm package ................................................. 50 LAA064–64-Ball Fortified Ball Grid Array (Fortified BGA) 13 x 11 mm package ........................................................................... 51 TS 048—48-Pin Standard TSOP ............................................ 52 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 53 Table 10. Command Definitions...................................................... 29 Write Operation Status . . . . . . . . . . . . . . . . . . . . . 30 June 14, 2005 Am29LV641G 6 A D V A N C E I N F O R M A T I O N PRODUCT SELECTOR GUIDE Part Number Am29LV641G Regulated Voltage Range VCC = 3.0–3.6 V Speed Option 55R Standard Voltage Range VCC = 2.7–3.6 V 70 Max Access Time (ns) 55 70 CE# Access Time (ns) 55 70 OE# Access Time (ns) 35 35 Note: See “AC Characteristics” for full specifications. BLOCK DIAGRAM DQ15–DQ0 VCC Sector Switches VSS WE# WP# ACC RY/BY# VIO Erase Voltage Generator RESET# State Control Command Register PGM Voltage Generator Chip Enable Output Enable Logic CE# OE# VCC Detector Address Latch STB Timer A21–A0 7 Input/Output Buffers Am29LV641G STB Data Latch Y-Decoder Y-Gating X-Decoder Cell Matrix June 14, 2005 A D V A N C E I N F O R M A T I O N CONNECTION DIAGRAMS A15 A14 A13 A12 A11 A10 A9 A8 A21 A20 WE# RESET# ACC WP# A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 A16 VIO VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 June 14, 2005 48-Pin Standard TSOP 48-Pin Reverse TSOP Am29LV641G 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 VIO VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 A15 A14 A13 A12 A11 A10 A9 A8 A21 A20 WE# RESET# ACC WP# A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 8 A D V A N C E I N F O R M A T I O N CONNECTION DIAGRAMS A8 B8 NC NC A7 B7 NC NC A2 63-Ball FBGA Top View, Balls Facing Down C7 A1 B1 NC* NC* E7 F7 G7 H7 M8 NC* NC* J7 K7 L7 M7 NC* NC* A13 A12 A14 A15 A16 VIO DQ15 VSS C6 D6 E6 F6 G6 H6 J6 K6 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 C5 D5 E5 F5 G5 H5 J5 K5 WE# RESET# A21 A19 DQ5 DQ12 VCC DQ4 C4 D4 E4 F4 G4 H4 J4 K4 RY/BY# ACC A18 A20 DQ2 DQ10 DQ11 DQ3 C3 D3 E3 F3 G3 H3 J3 K3 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 C2 D2 E2 F2 G2 H2 J2 K2 L2 M2 OE# VSS NC* NC* A3 NC* D7 L8 A4 A2 A1 A0 CE# L1 M1 NC* NC* * Balls are shorted together via the substrate but not connected to the die. 9 Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N CONNECTION DIAGRAMS 64-Ball Fortified BGA Top View, Balls Facing Down A8 B8 C8 D8 E8 F8 G8 H8 RFU RFU RFU VIO VSS RFU RFU RFU A7 B7 C7 D7 E7 F7 G7 H7 A13 A12 A14 A15 A16 BYTE# DQ15 VSS A6 B6 C6 D6 E6 F6 G6 H6 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 A5 B5 C5 D5 E5 F5 G5 H5 WE# RESET# A21 A19 DQ5 DQ12 VCC DQ4 A4 B4 C4 D4 E4 F4 G4 H4 A18 A20 DQ2 DQ10 DQ11 DQ3 RY/BY# WP#/ACC A3 B3 C3 D3 E3 F3 G3 H3 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 A2 B2 C2 D2 E2 F2 G2 H2 A3 A4 A2 A1 A0 CE# OE# VSS A1 B1 C1 D1 E1 F1 G1 H1 RFU RFU RFU RFU RFU VIO RFU RFU Special Package Handling Instructions Special handling is required for Flash Memory products in molded packages (TSOP and BGA) The package June 14, 2005 and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. Am29LV641G 10 A D V A N C E PIN DESCRIPTION A21–A0 = 22 Addresses inputs I N F O R M A T I O N LOGIC SYMBOL 22 DQ15–DQ0 = 16 Data inputs/outputs CE# = Chip Enable input OE# = Output Enable input WE# = Write Enable input WP# = Hardware Write Protect input ACC = Acceleration Input RY/BY# = Ready/Busy output RESET# = Hardware Reset Pin input VCC = 3.0 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) VIO = Output Buffer power VSS = Device Ground NC = Pin Not Connected Internally A21–A0 CE# 16 DQ15–DQ0 OE# WE# WP# ACC RESET# RY/BY# VIO Note:WP#/ACC functionality is multiplexed for Am29LV641GH/L devices. RY/BY# available only for Am29LV640GU devices. 11 Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29LV641G H 55R WH I TEMPERATURE RANGE I = Industrial (–40°C to +85°C) PACKAGE TYPE E = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048) F = 48-Pin Thin Small Outline Package (TSOP) Reverse Pinout (TSR048) WH = 63-Ball Fine-Pitch Ball Grid Array (FBGA) 0.80 mm pitch, 11 x 12 mm package (FBE063) PC = 64-Ball Fine-Pitch Ball Grid Array (Fortified BGA) 1.0 mm pitch, 13 x 11 mm package (LAA064) SPEED OPTION See Product Selector Guide and Valid Combinations SECTOR ARCHITECTURE AND SECTOR WRITE PROTECTION (WP# = 0) H = Uniform sector device, highest address sector protected L = Uniform sector device, lowest address sector protected DEVICE NUMBER/DESCRIPTION Am29LV641G 64 Megabit (4 M x 16-Bit) CMOS Uniform Sector Flash Memory with VersatileIO™ Control 3.0 Volt-only Read, Program, and Erase Valid Combinations for TSOP and SSOP Packages Am29LV641GH73, Am29LV641GL73 Am29LV641GH53R, Am29LV641GL53R EI, FI Valid Combinations for FBGA Packages Speed/VIO Range 70 ns VIO = 2.7 V – 3.6 V 55 ns VIO = 3.0 V – 3.6 V Marking Converstion For the Am29LV641GH/L/AmLV640GU Enhanced-VIO device, the last digit of the speed indicator specifies VIO range. Speed grades ending in 3 (e.g. 93, 103, etc.) indicate a 3 Volt VIO range; speed grades ending in 8 (e.g. 98, 108, etc.) indicate a 1.8 V VIO range. Package Marking Order Number Am29LV640GU53R L640GU53R 55ns VIO = 3.0V – 3.6 V L640GU73V 70 ns VIO = 2.7 V – 3.6 V WHI Am29LV640GU73 I Am29LV640GU53R L640GU53N 55 ns VIO = 3.0 V – 3.6 V L640GU73P 70 ns VIO = 2.7 V – 3.6 V PCI Am29LV640GU73 Speed/ VIO Range Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. June 14, 2005 Am29LV641G 12 A D V A N C E I N F O R M A T I O N DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The contents of the Table 1. register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Device Bus Operations CE# OE# WE# RESET# ACC Addresses (Note 2) DQ15– DQ0 Read L L H H X AIN DOUT Write (Program/Erase) L H L H X AIN (Note 4) Accelerated Program L H L H VHH AIN (Note 4) VCC ± 0.3 V X X VCC ± 0.3 V H X High-Z Output Disable L H H H X X High-Z Reset X X X L X X High-Z Sector Group Protect (Note 2) L H L VID X SA, A6 = L, A1 = H, A0 = L (Note 4) Sector Group Unprotect (Note 2) L H L VID X SA, A6 = H, A1 = H, A0 = L (Note 4) Temporary Sector Group Unprotect X X X VID X AIN (Note 4) Operation Standby Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 8.5–12.5 V, VHH = 11.5–12.5 V, X = Don’t Care, SA = Sector Address, AIN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Addresses are A21:A0. Sector addresses are A21:A15. 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Group Protection and Unprotection” section. 3. All sectors are unprotected when shipped from the factory (The SecSi Sector may be factory protected depending on version ordered.) 4. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 2). VersatileI/O™ (VIO) Control Requirements for Reading Array Data The VersatileI/O (VIO) control allows the host system to set the voltage levels that the device generates at its data outputs and the voltages tolerated at its data inputs to the same voltage level that is asserted on the VIO pin. This allows the device to operate in 1.8 V or 3 V system environment as required. To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. For example, a VI/O of 1.65–1.95 volts allows for I/O at the 3 volt level, driving and receiving signals to and from other 3 V devices on the same bus. 13 The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N enabled for read access until the command register contents are altered. See “Requirements for Reading Array Data” for more information. Refer to the AC Read-Only Operations table for timing specifications and to Figure 14 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data. Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a word, instead of four. The “Word Program Command Sequence” section has details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Table 2 indicates the address space that each sector occupies. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The AC Characteristics section contains timing specification tables and timing diagrams for write operations. Accelerated Program Operation The device offers accelerated program operations through the ACC function. This function is primarily intended to allow faster manufacturing throughput during system production. If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the ACC pin returns the device to normal operation. Note that the ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. Autoselect Functions If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to the Autoselect Mode and Autoselect Command Sequence sections for more information. June 14, 2005 Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within VCC ± 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (t CE ) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. I CC3 in the DC Characteristics table represents the standby current specification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for t ACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. I CC4 in the DC Characteristics table represents the automatic sleep mode current specification. RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.3 V, the standby current will be greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. Am29LV641G 14 A D V A N C E I N F O R M A T I O N Output Disable Mode Refer to the AC Characteristics tables for RESET# parameters and to Figure 15 for the timing diagram. Table 2. 15 When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. Sector Address Table Sector A21 A20 A19 A18 A17 A16 A15 8-bit Address Range (in hexadecimal) 16-bit Address Range (in hexadecimal) SA0 0 0 0 0 0 0 0 000000–00FFFF 000000–007FFF SA1 0 0 0 0 0 0 1 010000–01FFFF 008000–00FFFF SA2 0 0 0 0 0 1 0 020000–02FFFF 010000–017FFF SA3 0 0 0 0 0 1 1 030000–03FFFF 018000–01FFFF SA4 0 0 0 0 1 0 0 040000–04FFFF 020000–027FFF SA5 0 0 0 0 1 0 1 050000–05FFFF 028000–02FFFF SA6 0 0 0 0 1 1 0 060000–06FFFF 030000–037FFF SA7 0 0 0 0 1 1 1 070000–07FFFF 038000–03FFFF SA8 0 0 0 1 0 0 0 080000–08FFFF 040000–047FFF SA9 0 0 0 1 0 0 1 090000–09FFFF 048000–04FFFF SA10 0 0 0 1 0 1 0 0A0000–0AFFFF 050000–057FFF SA11 0 0 0 1 0 1 1 0B0000–0BFFFF 058000–05FFFF SA12 0 0 0 1 1 0 0 0C0000–0CFFFF 060000–067FFF SA13 0 0 0 1 1 0 1 0D0000–0DFFFF 068000–06FFFF SA14 0 0 0 1 1 1 0 0E0000–0EFFFF 070000–077FFF SA15 0 0 0 1 1 1 1 0F0000–0FFFFF 078000–07FFFF SA16 0 0 1 0 0 0 0 100000–10FFFF 080000–087FFF SA17 0 0 1 0 0 0 1 110000–11FFFF 088000–08FFFF SA18 0 0 1 0 0 1 0 120000–12FFFF 090000–097FFF SA19 0 0 1 0 0 1 1 130000–13FFFF 098000–09FFFF SA20 0 0 1 0 1 0 0 140000–14FFFF 0A0000–0A7FFF SA21 0 0 1 0 1 0 1 150000–15FFFF 0A8000–0AFFFF SA22 0 0 1 0 1 1 0 160000–16FFFF 0B0000–0B7FFF SA23 0 0 1 0 1 1 1 170000–17FFFF 0B8000–0BFFFF SA24 0 0 1 1 0 0 0 180000–18FFFF 0C0000–0C7FFF SA25 0 0 1 1 0 0 1 190000–19FFFF 0C8000–0CFFFF SA26 0 0 1 1 0 1 0 1A0000–1AFFFF 0D0000–0D7FFF SA27 0 0 1 1 0 1 1 1B0000–1BFFFF 0D8000–0DFFFF SA28 0 0 1 1 1 0 0 1C0000–1CFFFF 0E0000–0E7FFF SA29 0 0 1 1 1 0 1 1D0000–1DFFFF 0E8000–0EFFFF SA30 0 0 1 1 1 1 0 1E0000–1EFFFF 0F0000–0F7FFF Am29LV641G June 14, 2005 A D V A N C E Table 2. I N F O R M A T I O N Sector Address Table (Continued) Sector A21 A20 A19 A18 A17 A16 A15 8-bit Address Range (in hexadecimal) 16-bit Address Range (in hexadecimal) SA31 0 0 1 1 1 1 1 1F0000–1FFFFF 0F8000–0FFFFF SA32 0 1 0 0 0 0 0 200000–20FFFF 100000–107FFF SA33 0 1 0 0 0 0 1 210000–21FFFF 108000–10FFFF SA34 0 1 0 0 0 1 0 220000–22FFFF 110000–117FFF SA35 0 1 0 0 0 1 1 230000–23FFFF 118000–11FFFF SA36 0 1 0 0 1 0 0 240000–24FFFF 120000–127FFF SA37 0 1 0 0 1 0 1 250000–25FFFF 128000–12FFFF SA38 0 1 0 0 1 1 0 260000–26FFFF 130000–137FFF SA39 0 1 0 0 1 1 1 270000–27FFFF 138000–13FFFF SA40 0 1 0 1 0 0 0 280000–28FFFF 140000–147FFF SA41 0 1 0 1 0 0 1 290000–29FFFF 148000–14FFFF SA42 0 1 0 1 0 1 0 2A0000–2AFFFF 150000–157FFF SA43 0 1 0 1 0 1 1 2B0000–2BFFFF 158000–15FFFF SA44 0 1 0 1 1 0 0 2C0000–2CFFFF 160000–167FFF SA45 0 1 0 1 1 0 1 2D0000–2DFFFF 168000–16FFFF SA46 0 1 0 1 1 1 0 2E0000–2EFFFF 170000–177FFF SA47 0 1 0 1 1 1 1 2F0000–2FFFFF 178000–17FFFF SA48 0 1 1 0 0 0 0 300000–30FFFF 180000–187FFF SA49 0 1 1 0 0 0 1 310000–31FFFF 188000–18FFFF SA50 0 1 1 0 0 1 0 320000–32FFFF 190000–197FFF SA51 0 1 1 0 0 1 1 330000–33FFFF 198000–19FFFF SA52 0 1 1 0 1 0 0 340000–34FFFF 1A0000–1A7FFF SA53 0 1 1 0 1 0 1 350000–35FFFF 1A8000–1AFFFF SA54 0 1 1 0 1 1 0 360000–36FFFF 1B0000–1B7FFF SA55 0 1 1 0 1 1 1 370000–37FFFF 1B8000–1BFFFF SA56 0 1 1 1 0 0 0 380000–38FFFF 1C0000–1C7FFF SA57 0 1 1 1 0 0 1 390000–39FFFF 1C8000–1CFFFF SA58 0 1 1 1 0 1 0 3A0000–3AFFFF 1D0000–1D7FFF SA59 0 1 1 1 0 1 1 3B0000–3BFFFF 1D8000–1DFFFF SA60 0 1 1 1 1 0 0 3C0000–3CFFFF 1E0000–1E7FFF SA61 0 1 1 1 1 0 1 3D0000–3DFFFF 1E8000–1EFFFF SA62 0 1 1 1 1 1 0 3E0000–3EFFFF 1F0000–1F7FFF SA63 0 1 1 1 1 1 1 3F0000–3FFFFF 1F8000–1FFFFF SA64 1 0 0 0 0 0 0 400000–40FFFF 200000–207FFF SA65 1 0 0 0 0 0 1 410000–41FFFF 208000–20FFFF June 14, 2005 Am29LV641G 16 A D V A N C E Table 2. 17 I N F O R M A T I O N Sector Address Table (Continued) Sector A21 A20 A19 A18 A17 A16 A15 8-bit Address Range (in hexadecimal) 16-bit Address Range (in hexadecimal) SA66 1 0 0 0 0 1 0 420000–42FFFF 210000–217FFF SA67 1 0 0 0 0 1 1 430000–43FFFF 218000–21FFFF SA68 1 0 0 0 1 0 0 440000–44FFFF 220000–227FFF SA69 1 0 0 0 1 0 1 450000–45FFFF 228000–22FFFF SA70 1 0 0 0 1 1 0 460000–46FFFF 230000–237FFF SA71 1 0 0 0 1 1 1 470000–47FFFF 238000–23FFFF SA72 1 0 0 1 0 0 0 480000–48FFFF 240000–247FFF SA73 1 0 0 1 0 0 1 490000–49FFFF 248000–24FFFF SA74 1 0 0 1 0 1 0 4A0000–4AFFFF 250000–257FFF SA75 1 0 0 1 0 1 1 4B0000–4BFFFF 258000–25FFFF SA76 1 0 0 1 1 0 0 4C0000–4CFFFF 260000–267FFF SA77 1 0 0 1 1 0 1 4D0000–4DFFFF 268000–26FFFF SA78 1 0 0 1 1 1 0 4E0000–4EFFFF 270000–277FFF SA79 1 0 0 1 1 1 1 4F0000–4FFFFF 278000–27FFFF SA80 1 0 1 0 0 0 0 500000–50FFFF 280000–287FFF SA81 1 0 1 0 0 0 1 510000–51FFFF 288000–28FFFF SA82 1 0 1 0 0 1 0 520000–52FFFF 290000–297FFF SA83 1 0 1 0 0 1 1 530000–53FFFF 298000–29FFFF SA84 1 0 1 0 1 0 0 540000–54FFFF 2A0000–2A7FFF SA85 1 0 1 0 1 0 1 550000–55FFFF 2A8000–2AFFFF SA86 1 0 1 0 1 1 0 560000–56FFFF 2B0000–2B7FFF SA87 1 0 1 0 1 1 1 570000–57FFFF 2B8000–2BFFFF SA88 1 0 1 1 0 0 0 580000–58FFFF 2C0000–2C7FFF SA89 1 0 1 1 0 0 1 590000–59FFFF 2C8000–2CFFFF SA90 1 0 1 1 0 1 0 5A0000–5AFFFF 2D0000–2D7FFF SA91 1 0 1 1 0 1 1 5B0000–5BFFFF 2D8000–2DFFFF SA92 1 0 1 1 1 0 0 5C0000–5CFFFF 2E0000–2E7FFF SA93 1 0 1 1 1 0 1 5D0000–5DFFFF 2E8000–2EFFFF SA94 1 0 1 1 1 1 0 5E0000–5EFFFF 2F0000–2F7FFF SA95 1 0 1 1 1 1 1 5F0000–5FFFFF 2F8000–2FFFFF SA96 1 1 0 0 0 0 0 600000–60FFFF 300000–307FFF SA97 1 1 0 0 0 0 1 610000–61FFFF 308000–30FFFF SA98 1 1 0 0 0 1 0 620000–62FFFF 310000–317FFF SA99 1 1 0 0 0 1 1 630000–63FFFF 318000–31FFFF SA100 1 1 0 0 1 0 0 640000–64FFFF 320000–327FFF Am29LV641G June 14, 2005 A D V A N C E Table 2. I N F O R M A T I O N Sector Address Table (Continued) Sector A21 A20 A19 A18 A17 A16 A15 8-bit Address Range (in hexadecimal) 16-bit Address Range (in hexadecimal) SA101 1 1 0 0 1 0 1 650000–65FFFF 328000–32FFFF SA102 1 1 0 0 1 1 0 660000–66FFFF 330000–337FFF SA103 1 1 0 0 1 1 1 670000–67FFFF 338000–33FFFF SA104 1 1 0 1 0 0 0 680000–68FFFF 340000–347FFF SA105 1 1 0 1 0 0 1 690000–69FFFF 348000–34FFFF SA106 1 1 0 1 0 1 0 6A0000–6AFFFF 350000–357FFF SA107 1 1 0 1 0 1 1 6B0000–6BFFFF 358000–35FFFF SA108 1 1 0 1 1 0 0 6C0000–6CFFFF 360000–367FFF SA109 1 1 0 1 1 0 1 6D0000–6DFFFF 368000–36FFFF SA110 1 1 0 1 1 1 0 6E0000–6EFFFF 370000–377FFF SA111 1 1 0 1 1 1 1 6F0000–6FFFFF 378000–37FFFF SA112 1 1 1 0 0 0 0 700000–70FFFF 380000–387FFF SA113 1 1 1 0 0 0 1 710000–71FFFF 388000–38FFFF SA114 1 1 1 0 0 1 0 720000–72FFFF 390000–397FFF SA115 1 1 1 0 0 1 1 730000–73FFFF 398000–39FFFF SA116 1 1 1 0 1 0 0 740000–74FFFF 3A0000–3A7FFF SA117 1 1 1 0 1 0 1 750000–75FFFF 3A8000–3AFFFF SA118 1 1 1 0 1 1 0 760000–76FFFF 3B0000–3B7FFF SA119 1 1 1 0 1 1 1 770000–77FFFF 3B8000–3BFFFF SA120 1 1 1 1 0 0 0 780000–78FFFF 3C0000–3C7FFF SA121 1 1 1 1 0 0 1 790000–79FFFF 3C8000–3CFFFF SA122 1 1 1 1 0 1 0 7A0000–7AFFFF 3D0000–3D7FFF SA123 1 1 1 1 0 1 1 7B0000–7BFFFF 3D8000–3DFFFF SA124 1 1 1 1 1 0 0 7C0000–7CFFFF 3E0000–3E7FFF SA125 1 1 1 1 1 0 1 7D0000–7DFFFF 3E8000–3EFFFF SA126 1 1 1 1 1 1 0 7E0000–7EFFFF 3F0000–3F7FFF SA127 1 1 1 1 1 1 1 7F0000–7FFFFF 3F8000–3FFFFF Note: All sectors are 32 Kwords in size. June 14, 2005 Am29LV641G 18 A D V A N C E I N F O R M A T I O N Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programm ing algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID (8.5 V to 12.5 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in Table 3. Table 3. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see Table 2). Table 3 shows the remaining address bits that are don’t care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 10. This method does not require V ID. Refer to the Autoselect Command Sequence section for more information. Autoselect Codes, (High Voltage Method) A14 to A10 A9 A8 to A7 A7 to A0 A6 A5 to A2 A1 A0 DQ15 to DQ0 CE# OE# WE# A21 to A15 L L H X X VID X — L X L L XX01h Read Cycle 1 L L H X X VID X — L X L H 22D7h Read Cycle 2 L L H X X VID 0Eh L L H 220Fh Read Cycle 3 L L H X X VID 0Fh L L H XX00h Sector Protection Verification L L H SA X VID X — L X H L 01h (protected), 00h (unprotected) SecSi™ Sector Indicator Bit (DQ7) L L H X X VID X — L X H H 98h (factory locked), 18h (not factory locked) SecSi™ Sector Indicator Bit (DQ7), WP# protects highest address sector L L H X X VID X — L X H H XX98h (factory locked), XX18h (not factory locked) SecSi™ Sector Indicator Bit (DQ7), WP# protects lowest address sector L L H X X VID X — L X H H XX88h (factory locked), XX08h (not factory locked) Description Autoselect Device Code Manufacturer ID: AMD Legend: L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care. Note: SecSi™ Sector Indicator Bit (DQ7) exist only in the Am29LV641GH/L devices. 19 Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N Sector Group Protection and Unprotection Table 4. Sector Group Protection/Unprotection Address Table The hardware sector group protection feature disables both program and erase operations in any sector group. In this device, a sector group consists of four adjacent sectors that are protected or unprotected at the same time (see Table 4). The hardware sector group unprotection feature re-enables both program and erase operations in previously protected sector groups. Sector group protection/unprotection can be implemented via two methods. Sector Group A21–A17 SA0–SA3 00000 The primary method requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows the algorithms and Figure 23 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For sector group unprotect, all unprotected sector groups must first be protected prior to the first sector group unprotect write cycle. The alternate method intended only for programming equipment requires VID on address pin A9 and OE#. This method is compatible with programmer routines written for earlier 3.0 volt-only AMD flash devices. Publication number 22367 contains further details; contact an AMD representative to request a copy. SA4–SA7 00001 SA8–SA11 00010 SA12–SA15 00011 SA16–SA19 00100 SA20–SA23 00101 SA24–SA27 00110 SA28–SA31 00111 SA32–SA35 01000 SA36–SA39 01001 SA40–SA43 01010 SA44–SA47 01011 SA48–SA51 01100 SA52–SA55 01101 SA56–SA59 01110 SA60–SA63 01111 SA64–SA67 10000 SA68–SA71 10001 SA72–SA75 10010 The device is shipped with all sector groups unprotected. AMD offers the option of programming and protecting sector groups at its factory prior to shipping the device through AMD’s ExpressFlash™ Service. Contact an AMD representative for details. SA76–SA79 10011 SA80–SA83 10100 SA84–SA87 10101 SA88–SA91 10110 It is possible to determine whether a sector group is protected or unprotected. See the Autoselect Mode section for details. SA92–SA95 10111 SA96–SA99 11000 SA100–SA103 11001 SA104–SA107 11010 SA108–SA111 11011 SA112–SA115 11100 SA116–SA119 11101 SA120–SA123 11110 SA124–SA127 11111 Note: All sector groups are 128 Kwords in size. June 14, 2005 Am29LV641G 20 A D V A N C E I N F O R M A T I O N Write Protect (WP#) The Write Protect function provides a hardware method of protecting the first or last sector without using VID. START If the system asserts VIL on the WP# pin, the device disables program and erase functions in the first or last sector independently of whether those sectors were protected or unprotected using the method described in “Sector Group Protection and Unprotection”. Note that if WP# is at V IL when the device is in the standby mode, the maximum input load current is increased. See the table in “DC Characteristics”. RESET# = VID (Note 1) Perform Erase or Program Operations RESET# = VIH If the system asserts VIH on the WP# pin, the device reverts to whether the first or last sector was previously set to be protected or unprotected using the method described in “Sector Group Protection and Unprotection”. Temporary Sector Group Unprotect Completed (Note 2) Temporary Sector Group Unprotect (Note: In this device, a sector group consists of four adjacent sectors that are protected or unprotected at the same time (see Table 4)). This feature allows temporary unprotection of previously protected sector groups to change data in-system. The Sector Group Unprotect mode is activated by setting the RESET# pin to VID (8.5 V – 12.5 V). During this mode, formerly protected sector groups can be programmed or erased by selecting the sector group addresses. Once V ID is removed from the RESET# pin, all the previously protected sector groups are protected again. Figure 1 shows the algorithm, and Figure 22 shows the timing diagrams, for this feature. 21 Notes: 1. All protected sector groups unprotected (If WP# = VIL, the first or last sector will remain protected). 2. All previously protected sector groups are protected once again. Am29LV641G Figure 1. Temporary Sector Group Unprotect Operation June 14, 2005 A D V A N C E I N F O R M A T I O N START START PLSCNT = 1 RESET# = VID Wait 1 μs Temporary Sector Group Unprotect Mode No PLSCNT = 1 Protect all sector groups: The indicated portion of the sector group protect algorithm must be performed for all unprotected sector groups prior to issuing the first sector group unprotect address RESET# = VID Wait 1 μs First Write Cycle = 60h? First Write Cycle = 60h? Temporary Sector Group Unprotect Mode Yes Yes Set up sector group address No Sector Group Protect: Write 60h to sector group address with A6 = 0, A1 = 1, A0 = 0 All sector groups protected? Yes Set up first sector group address Sector Group Unprotect: Write 60h to sector group address with A6 = 1, A1 = 1, A0 = 0 Wait 150 µs Increment PLSCNT No Verify Sector Group Protect: Write 40h to sector group address twith A6 = 0, A1 = 1, A0 = 0 Reset PLSCNT = 1 Wait 15 ms Read from sector group address with A6 = 0, A1 = 1, A0 = 0 Verify Sector Group Unprotect: Write 40h to sector group address with A6 = 1, A1 = 1, A0 = 0 Increment PLSCNT No No PLSCNT = 25? Read from sector group address with A6 = 1, A1 = 1, A0 = 0 Data = 01h? Yes No Yes Device failed Protect another sector group? Yes No PLSCNT = 1000? No Yes Remove VID from RESET# Device failed Write reset command Sector Group Protect Algorithm Set up next sector group address Data = 00h? Yes Last sector group verified? No Yes Sector Group Protect complete Sector Group Unprotect Algorithm Remove VID from RESET# Write reset command Sector Group Unprotect complete Figure 2. June 14, 2005 In-System Sector Group Protect/Unprotect Algorithms Am29LV641G 22 A D V A N C E I N F O R M A T I O N SecSi™ (Secured Silicon) Sector Flash Memory Region or following a hardware reset, the device reverts to sending commands to sector SA0. The SecSi (Secured Silicon) Sector feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The SecSi Sector is 128 words in length, and uses a SecSi Sector Indicator Bit (DQ7) to indicate whether or not the SecSi Sector is locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed, which prevents cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field. Factory Locked: SecSi Sector Programmed and Protected At the Factory AMD offers the device with the SecSi Sector either fac t or y l ocke d or c u s t om e r l o ck abl e. T he fac tory-locked version is always protected when shipped from the factory, and has the SecSi (Secured Silicon) Sector Indicator Bit permanently set to a “1.” The customer-lockable version is shipped with the SecSi Sector unprotected, allowing customers to utilize that sector in any manner they choose. The customer-lockable version also has the SecSi Sector Indicator Bit permanently set to a “0.” Thus, the SecSi Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked. The SecSi sector address space in this device is allocated as follows: Table 5. SecSi Sector Address Range SecSi Sector Contents Standard ExpressFlash Factory Locked Factory Locked 000000h–000007h ESN ESN or determined by customer 000008h–00007Fh Unavailable Determined by customer Customer Lockable Determined by customer *All Uniform Devices (not including Uniform High) such as Am29LV640GU has its Sector starting at address 0. The system accesses the SecSi Sector through a command sequence (see “Enter SecSi Sector/Exit SecSi Sector Command Sequence”). After the system has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by using the addresses normally occupied by the first sector (SA0). This mode of operation continues until the system issues the Exit SecSi Sector command sequence, or until power is removed from the device. On power-up, 23 In devices with an ESN, the SecSi Sector is protected when the device is shipped from the factory. The SecSi Sector cannot be modified in any way. A factory locked device has an 8-word random ESN at addresses 000000h–000007h. Customers may opt to have their code programmed by AMD through the AMD ExpressFlash service. The devices are then shipped from AMD’s factory with the SecSi Sector permanently locked. Contact an AMD representative for details on using AMD’s ExpressFlash service. Customer Lockable: SecSi Sector NOT Programmed or Protected At the Factory As an alternative to the factory-locked version, the device may be ordered such that the customer may progra m an d p r ot ec t t he 12 8 - wo rd Se cS i se ct or. Programming and protecting the SecSi Sector must be used with caution since, once protected, there is no procedure available for unprotecting the SecSi Sector area and none of the bits in the SecSi Sector memory space can be modified in any way. The SecSi Sector area can be protected using one of the following procedures: ■ Write the three-cycle Enter SecSi Sector Region command sequence, and then follow the in-system sector protect algorithm as shown in Figure 2, except that RESET# may be at either VIH or VID. This allows in-system protection of the SecSi Sector without raising any device pin to a high voltage. Note that this method is only applicable to the SecSi Sector. ■ Write the three-cycle Enter SecSi Sector Region command sequence, and then use the alternate method of sector protection described in the “Sector Group Protection and Unprotection” section. Once the SecSi Sector is programmed, locked and verified, the system must write the Exit SecSi Sector Region command sequence to return to reading and writing within the remainder of the array. Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during V CC power-up and power-down transitions, or from system noise. START RESET# = VIH or VID Wait 1 μs Write 60h to any address Write 40h to SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 Read from SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 Low VCC Write Inhibit If data = 00h, SecSi Sector is unprotected. If data = 01h, SecSi Sector is protected. When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when V CC is greater than VLKO. Remove VIH or VID from RESET# Write reset command Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. SecSi Sector Protect Verify complete Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. Figure 3. SecSi Sector Protect Verify Power-Up Write Inhibit Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 10 for command definitions). In addition, the following hardware If WE# = CE# = VIL and OE# = V IH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. COMMON FLASH MEMORY INTERFACE (CFI) The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. CFI data at the addresses given in Tables 6–9. The system must write the reset command to return the device to reading array data. For further information, please refer to the CFI Specification and CFI Publication 100, available via the World Wide Web at http://www.amd.com/flash/cfi. Alternatively, contact an AMD representative for copies of these documents. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h, any time the device is ready to read array data. The system can read CFI information at the addresses given in Tables 6–9. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read June 14, 2005 Am29LV641G 24 A D V A N C E Table 6. I N F O R M A T I O N CFI Query Identification String Addresses (x16) Data Description 10h 11h 12h 0051h 0052h 0059h Query Unique ASCII string “QRY” 13h 14h 0002h 0000h Primary OEM Command Set 15h 16h 0040h 0000h Address for Primary Extended Table 17h 18h 0000h 0000h Alternate OEM Command Set (00h = none exists) 19h 1Ah 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists) Table 7. System Interface String Addresses (x16) Data Description 1Bh 0027h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Ch 0036h VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Dh 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 0003h Typical timeout per single byte/word write 2N µs 20h 0000h Typical timeout for Min. size buffer write 2N µs (00h = not supported) 21h 000Ah Typical timeout per individual block erase 2N ms 22h 0000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 0005h Max. timeout for byte/word write 2N times typical 24h 0000h Max. timeout for buffer write 2N times typical 25h 0002h Max. timeout per individual block erase 2N times typical 26h 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) Table 8. Device Geometry Definition Addresses (x16) Data 27h 0017h Device Size = 2N byte 28h 29h 0001h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 0000h 0000h Max. number of byte in multi-byte write = 2N (00h = not supported) 2Ch 0002h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 0007h 0000h 0020h 0000h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 25 Description Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N 31h 32h 33h 34h 007Eh 0000h 0000h 0001h Erase Block Region 2 Information (refer to CFI publication 100) 35h 36h 37h 38h 0000h 0000h 0000h 0000h Erase Block Region 3 Information (refer to CFI publication 100) 39h 3Ah 3Bh 3Ch 0000h 0000h 0000h 0000h Erase Block Region 4 Information (refer to CFI publication 100) June 14, 2005 Am29LV641G 26 A D V A N C E Table 9. I N F O R M A T I O N Primary Vendor-Specific Extended Query Addresses (x16) Data Description 40h 41h 42h 0050h 0052h 0049h Query-unique ASCII string “PRI” 43h 0031h Major version number, ASCII 44h 0033h Minor version number, ASCII 45h 0004h Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Silicon Revision Number (Bits 5-2) 46h 0002h Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write 47h 0004h Sector Protect 0 = Not Supported, X = Number of sectors in per group 48h 0001h Sector Temporary Unprotect 00 = Not Supported, 01 = Supported 49h 0004h Sector Protect/Unprotect scheme 04 = 29LV800 mode 4Ah 0000h Simultaneous Operation 00 = Not Supported, X = Number of Sectors in Bank 4Bh 0000h Burst Mode Type 00 = Not Supported, 01 = Supported 4Ch 0000h Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page 4Dh 00B5h 4Eh 00C5h 4Fh 00XXh ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV 00h = Uniform sector device COMMAND DEFINITIONS Writing specific address and data commands or sequences into the command register initiates device operations. Table 10 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is then required to return the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for timing diagrams. Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to 27 retrieve data. The device is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information. The system must issue the reset command to return the device to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the device is in the autoselect mode. See the next section, Reset Command, for more information. Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N See also Requirements for Reading Array Data in the Device Bus Operations section for more information. The Read-Only Operations table provides the read parameters, and Figure 14 shows the timing diagram. ■ A read cycle at address XX00h returns the manufacturer code. Reset Command ■ A read cycle to an address containing a sector group address (SA), and the address 02h on A7–A0 in word mode returns 01h if the sector group is protected, or 00h if it is unprotected. (Refer to Table 4 for valid sector addresses). Writing the reset command resets the device to the read or erase-suspend-read mode. Address bits are don’t cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to the read mode. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to the read mode. If the program command sequence is written while the device is in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If the device entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the device to the read mode (or erase-suspend-read mode if the device was in Erase Suspend). Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected. Table 10 shows the address and data requirements. This method is an alternative to that shown in Table 3, which is intended for PROM programmers and requires V ID on address pin A9. The autoselect command sequence may be written to an address that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the autoselect command. The device then enters the autoselect mode. The system may read at any address any number of times without initiating another autoselect command sequence: June 14, 2005 ■ A read cycle at address XX01h returns the device code. The system must write the reset command to return to the read mode (or erase-suspend-read mode if the device was previously in Erase Suspend). Enter SecSi Sector/Exit SecSi Sector Command Sequence The SecSi Sector region provides a secured data area containing an 8-word random Electronic Serial Number (ESN). The system can access the SecSi Sector region by issuing the three-cycle Enter SecSi Sector command sequence. The device continues to access the SecSi Sector region until the system issues the four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector command sequence returns the device to normal operation. Table 10 shows the address and data requirements for both command sequences. See also “SecSi ™ (Secured Silicon) Sector Flash Memory Region” for further information. Word Program Command Sequence Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table 10 shows the address and data requirements for the word program command sequence. When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using DQ7 or DQ6. Refer to the Write Operation Status section for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once the device has returned to the read mode, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed Am29LV641G 28 A D V A N C E I N F O R M A T I O N from “0” back to a “1.” Attempting to do so may cause the device to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.” START Unlock Bypass Command Sequence Write Program Command Sequence The unlock bypass feature allows the system to program words to the device faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 10 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data 90h. The second cycle must contain the data 00h. The device then returns to the read mode. The device offers accelerated program operations through the ACC pin. When the system asserts VHH on the ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the ACC pin to accelerate the operation. Note that the ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. Figure 4 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations table in the AC Characteristics section for parameters, and Figure 16 for timing diagrams. 29 Data Poll from System Embedded Program algorithm in progress Verify Data? No Yes Increment Address No Last Address? Yes Programming Completed Note: See Table 10 for program command sequence. Figure 4. Program Operation Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 10 shows the address and data requirements for the chip erase command sequence. Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N When the Embedded Erase algorithm is complete, the device returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6 or DQ2. Refer to the Write Operation Status section for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. Figure 5 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 18 section for timing diagrams. Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 10 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing sector. The system can determine the status of the erase operation by reading DQ7, DQ6, or DQ2 in the erasing sector. Refer to the Write Operation Status section for information on these status bits. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. Figure 5 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 18 section for timing diagrams. Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. After the command sequence is written, a sector erase time-out of 50 µs occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than S e ct o r E ra se o r E ra s e S u sp en d d u r in g th e time-out period resets the device to the read mode. The system must rewrite the command sequence and any additional addresses and commands. When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command sequence. After an erase-suspended program operation is complete, the device returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard word program operation. June 14, 2005 After the erase operation has been suspended, the device enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to the Write Operation Status section for information on these status bits. Am29LV641G 30 A D V A N C E I N F O R M A T I O N Refer to the Write Operation Status section for more information. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the Autoselect Mode and Autoselect Command Sequence sections for details. START Write Erase Command Sequence (Notes 1, 2) To resume the sector erase operation, the system must write the Erase Resume command. The address of the erase-suspended sector is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. Data Poll to Erasing Bank from System No Embedded Erase algorithm in progress Data = FFh? Yes Erasure Completed Notes: 1. See Table 10 for erase command sequence. 2. See the section on DQ3 for information on the sector erase timer. Figure 5. 31 Am29LV641G Erase Operation June 14, 2005 A D V A N C E I N F O R M A T I O N Command Definitions Table 10. Read (Note 6) Autoselect (Note 8) Reset (Note 7) Bus Cycles (Notes 2–5) Cycles Command Sequence (Note 1) Command Definitions Addr Data 1 RA RD First Second Third Fourth Fifth Addr Data Addr Data Addr Data 1 XXX F0 Manufacturer ID 4 555 AA 2AA 55 555 90 X00 0001 Device ID 4 555 AA 2AA 55 555 90 X01 22E7 SecSi™ Sector Factory Protect (Note 9) 4 555 AA 2AA 55 555 90 X03 (see Note 9) Sector Group Protect Verify (Note 10) 4 555 AA 2AA 55 555 90 (SA)X02 XX00/ XX01 Sixth Addr Data Addr Data X0E 220F X0F (Note 16) Enter SecSi Sector Region 3 555 AA 2AA 55 555 88 Exit SecSi Sector Region 4 555 AA 2AA 55 555 90 XXX 00 Program 4 555 AA 2AA 55 555 A0 PA PD Unlock Bypass 555 AA 2AA 55 555 20 XXX A0 PA PD Unlock Bypass Reset (Note 12) 3 2 2 XXX 90 XXX 00 Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10 Sector Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 SA 30 Unlock Bypass Program (Note 11) Erase Suspend (Note 13) 1 BA B0 Erase Resume (Note 14) 1 BA 30 CFI Query (Note 15) 1 55 98 Legend: X = Don’t care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. Notes: 1. See Table 1 for description of bus operations. PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A21–A15 uniquely select any sector. 9. 2. All values are in hexadecimal. 3. Except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles. 4. Data bits DQ15–DQ8 are don’t care in command sequences, except for RD and PD. 5. Unless otherwise noted, address bits A21–A15 are don’t cares. 6. No unlock or command cycles required when device is in read mode. 7. The Reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in Erase Suspend) when the device is in the autoselect mode, or if DQ5 goes high (while the device is providing status information). 8. The fourth cycle of the autoselect command sequence is a read cycle. Data bits DQ15–DQ8 are don’t care. See the Autoselect Command Sequence section for more information. If WP# protects the highest address sector, the data is 98h for factory locked and 18h for not factory locked. If WP# protects the lowest address sector, the data is 88h for factory locked and 08h for not factor locked. 10. The data is 00h for an unprotected sector group and 01h for a protected sector group. 11. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 12. The Unlock Bypass Reset command is required to return to the read mode when the device is in the unlock bypass mode. 13. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation. 14. The Erase Resume command is valid only during the Erase Suspend mode. 15. Command is valid when device is ready to read array data or when device is in autoselect mode. 16. Bottom boot = 2200 and top boot = 2201. June 14, 2005 Am29LV641G 32 A D V A N C E I N F O R M A T I O N WRITE OPERATION STATUS The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 11 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. in the AC Characteristics section shows the Data# Polling timing diagram. START DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. Read DQ7–DQ0 Addr = VA During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to the read mode. DQ7 = Data? No No Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ0–DQ6 may be still invalid. Valid data on DQ0–DQ7 will appear on successive read cycles. Table 11 shows the outputs for Data# Polling on DQ7. Figure 6 shows the Data# Polling algorithm. Figure 19 33 DQ5 = 1? Yes During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the device returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. Yes Read DQ7–DQ0 Addr = VA DQ7 = Data? Yes No FAIL PASS Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 6. Data# Polling Algorithm DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N program or erase operation), and during the sector erase time-out. START During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. Read DQ7–DQ0 After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. Read DQ7–DQ0 Toggle Bit = Toggle? The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling). No Yes No DQ5 = 1? Yes If a program address falls within a protected sector, DQ6 toggles for approximately 1 μs after the program command sequence is written, then returns to reading array data. Read DQ7–DQ0 Twice DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Toggle Bit = Toggle? Table 11 shows the outputs for Toggle Bit I on DQ6. Figure 7 shows the toggle bit algorithm. Figure 20 in the “AC Characteristics” section shows the toggle bit timing diagrams. Figure 21 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II. No Yes Program/Erase Operation Not Complete, Write Reset Command Figure 7. Program/Erase Operation Complete Toggle Bit Algorithm Note: The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1.” See the subsections on DQ6 and DQ2 for more information. June 14, 2005 Am29LV641G 34 A D V A N C E I N F O R M A T I O N DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 7). DQ5: Exceeded Timing Limits DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 11 to compare outputs for DQ2 and DQ6. DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully completed. Figure 7 shows the toggle bit algorithm in flowchart form, and the section “DQ2: Toggle Bit II” explains the algorithm. See also the DQ6: Toggle Bit I subsection. Figure 20 shows the toggle bit timing diagram. Figure 21 shows the differences between DQ2 and DQ6 in graphical form. Under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read mode if the device was previously in the erase-suspend-program mode). Reading Toggle Bits DQ6/DQ2 Refer to Figure 7 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor 35 The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a “1.” DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3. See also the Sector Erase Command Sequence section. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 11 shows the status of DQ3 relative to the other status bits. Am29LV641G June 14, 2005 A D V A N C E Table 11. Standard Mode Erase Suspend Mode I N F O R M A T I O N Write Operation Status Status Embedded Program Algorithm Embedded Erase Algorithm Erase Erase-Suspend-Re Suspended Sector ad Non-Erase Suspended Sector Erase-Suspend-Program DQ7 (Note 2) DQ7# 0 DQ6 Toggle Toggle DQ5 (Note 1) 0 0 DQ3 N/A 1 DQ2 (Note 2) No toggle Toggle 1 No toggle 0 N/A Toggle Data Data Data Data Data DQ7# Toggle 0 N/A N/A Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. June 14, 2005 Am29LV641G 36 A D V A N C E I N F O R M A T I O N ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied. . . . . . . . . . . . . . –65°C to +125°C Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V 20 ns 20 ns +0.8 V –0.5 V –2.0 V VIO . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +5.5 V 20 ns A9, OE#, ACC, and RESET# (Note 2) . . . . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V Figure 8. Maximum Negative Overshoot Waveform All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V Output Short Circuit Current (Note 3) . . . . . . 200 mA Notes: 1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may overshoot V SS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. See Figure 8. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 9. 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 2. Minimum DC input voltage on pins A9, OE#, ACC, and RESET# is –0.5 V. During voltage transitions, A9, OE#, ACC, and RESET# may overshoot V SS to –2.0 V for periods of up to 20 ns. See Figure 8. Maximum DC input voltage on pin A9, OE#, ACC, and RESET# is +12.5 V which may overshoot to +14.0 V for periods up to 20 ns. 20 ns 20 ns Figure 9. Maximum Positive Overshoot Waveform 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. OPERATING RANGES Industrial (I) Devices Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C VCC Supply Voltages VCC for all devices . . . . . . . . . . . . . . . . . 2.7 V to 3.6 V Operating ranges define those limits between which the functionality of the device is guaranteed. 37 Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N DC CHARACTERISTICS CMOS Compatible Parameter Symbol Parameter Description Test Conditions Min ILI Input Load Current (Note 1) VIN = VSS to VCC, VCC = VCC max ILIT A9, ACC Input Load Current VCC = VCC max; A9 = 12.5 V ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC max ICC1 VCC Active Read Current (Notes 2, 3) CE# = VIL, OE# = VIH Typ Max Unit ±1.0 µA 35 µA ±1.0 µA 5 MHz 9 16 1 MHz 2 4 ICC2 VCC Active Write Current (Notes 3, 4) CE# = VIL, OE# = VIH, WE# = VIL 15 26 mA ICC3 VCC Standby Current (Note 3) CE#, RESET# = VCC ± 0.3 V, WP# = VIH 0.2 5 µA ICC4 VCC Reset Current (Note 3) RESET# = VSS ± 0.3 V, WP# = VIH 0.2 5 µA ICC5 Automatic Sleep Mode (Notes 3, 5) VIH = VCC ± 0.3 V; VIL = VSS ± 0.3 V, WP# = VIH 0.2 5 µA VIL Input Low Voltage (Note 6) –0.5 0.8 V VIH Input High Voltage (Note 6) 0.7 x VCC VCC + 0.3 V VHH Voltage for ACC Program Acceleration VCC = 3.0 V ± 10% 11.5 12.5 V VID Voltage for Autoselect and Temporary VCC = 3.0 V ± 10% Sector Unprotect 8.5 12.5 V VOL Output Low Voltage 0.45 V VOH1 Output High Voltage (Note 7) VOH2 VLKO IOL = 4.0 mA, VCC = VCC min mA IOH = –2.0 mA, VCC = VCC min 0.85 x VIO V IOH = –100 µA, VCC = VCC min VIO–0.4 V Low VCC Lock-Out Voltage (Note 7) 2.3 2.5 V Notes: 1. On the WP# pin only, the maximum input load current when WP# = VIL is ± 5.0 µA. 2. 3. 4. 5. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Maximum ICC specifications are tested with VCC = VCCmax. ICC active while Embedded Erase or Embedded Program is in progress. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA. 6. If VIO < VCC, maximum VIL for CE# is 0.3 x VIO. If VIO < VCC, minimum VIH for CE# is 0.3 x VIO. 7. Not 100% tested. June 14, 2005 Am29LV641G 38 A D V A N C E I N F O R M A T I O N DC CHARACTERISTICS Zero-Power Flash Supply Current in mA 25 20 15 10 5 0 0 500 1000 1500 Note: Addresses are switching at 1 MHz Figure 10. 2000 2500 3000 3500 4000 Time in ns ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) 12 3.6 V 10 Supply Current in mA 8 2.7 V 6 4 2 0 1 2 3 4 5 Frequency in MHz Note: T = 25 °C Figure 11. 39 Typical ICC1 vs. Frequency Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N TEST CONDITIONS Table 12. 3.3 V Test Condition 2.7 kΩ Device Under Test CL Test Specifications 6.2 kΩ 55R Figure 12. Test Setup Unit Output Load 1 TTL gate Output Load Capacitance, CL (including jig capacitance) 30 pF Input Rise and Fall Times 5 ns 0.0–3.0 V Input timing measurement reference levels (See Note) 1.5 V Output timing measurement reference levels 0.5 VIO V Input Pulse Levels Note: Diodes are IN3064 or equivalent 70R Note: If VIO < VCC, the reference level is 0.5 VIO. KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS OUTPUTS Steady Changing from H to L Changing from L to H 3.0 V Input Don’t Care, Any Change Permitted Changing, State Unknown Does Not Apply Center Line is High Impedance State (High Z) 1.5 V Measurement Level 0.5 VIO V Output 0.0 V Note: If VIO < VCC, the input measurement reference level is 0.5 VIO. Figure 13. Input Waveforms and Measurement Levels June 14, 2005 Am29LV641G 40 A D V A N C E I N F O R M A T I O N AC CHARACTERISTICS Read-Only Operations Parameter Speed Options JEDEC Std. Description Test Setup 55R 70 Unit tAVAV tRC Read Cycle Time (Note 1) Min 55 70 ns tAVQV tACC Address to Output Delay CE#, OE# = VIL Max 55 70 ns tELQV tCE Chip Enable to Output Delay OE# = VIL Max 55 70 ns tGLQV tOE Output Enable to Output Delay Max 30 ns tEHQZ tDF Chip Enable to Output High Z (Note 1) Max 16 ns tGHQZ tDF Output Enable to Output High Z (Note 1) Max 16 ns tAXQX tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Min 0 ns Read Min 0 ns tOEH Output Enable Hold Time (Note 1) Toggle and Data# Polling Min 10 ns Notes: 1. Not 100% tested. 2. See Figure 12 and Table 12 for test specifications. tRC Addresses Stable Addresses tACC CE# tRH tRH tDF tOE OE# tOEH WE# tCE tOH HIGH Z HIGH Z Output Valid Outputs RESET# Figure 14. 41 Read Operation Timings Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description All Speed Options Unit tReady RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) Max 20 μs tReady RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) Max 500 ns tRP RESET# Pulse Width Min 500 ns tRH Reset High Time Before Read (See Note) Min 50 ns tRPD RESET# Low to Standby Mode Min 20 μs Note: Not 100% tested. CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady CE#, OE# RESET# tRP Figure 15. June 14, 2005 Reset Timings Am29LV641G 42 A D V A N C E I N F O R M A T I O N AC CHARACTERISTICS Erase and Program Operations Parameter Speed Options JEDEC Std. Description tAVAV tWC Write Cycle Time (Note 1) Min tAVWL tAS Address Setup Time Min 0 ns tASO Address Setup Time to OE# low during toggle bit polling Min 15 ns tAH Address Hold Time Min 40 ns tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min 0 ns tDVWH tDS Data Setup Time Min 40 ns tWHDX tDH Data Hold Time Min 0 ns tOEPH Output Enable High during toggle bit polling Min 20 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 30 ns tWHDL tWPH Write Pulse Width High Min 25 ns tWHWH1 tWHWH1 Word Programming Operation (Note 2) Typ 7 µs tWHWH1 tWHWH1 Accelerated Word Programming Operation (Note 2) Typ 4 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.6 sec tVHH VHH Rise and Fall Time (Note 1) Min 250 ns tVCS VCC Setup Time (Note 1) Min 50 µs tWLAX 55R 70 Unit 55 70 ns Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. 43 Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N AC CHARACTERISTICS Program Command Sequence (last two cycles) tAS tWC Addresses Read Status Data (last two cycles) 555h PA PA PA tAH CE# tCH OE# tWHWH1 tWP WE# tWPH tCS tDS tDH PD A0h Data Status DOUT VCC tVCS Notes: 1. PA = program address, PD = program data, DOUT is the true data at the program address. Illustration shows device in word mode. Figure 16. Program Operation Timings VHH ACC VIL or VIH VIL or VIH tVHH Figure 17. June 14, 2005 tVHH Accelerated Program Timing Diagram Am29LV641G 44 A D V A N C E I N F O R M A T I O N AC CHARACTERISTICS Erase Command Sequence (last two cycles) tAS tWC 2AAh Addresses Read Status Data VA SA VA 555h for chip erase tAH CE# tCH OE# tWP WE# tWPH tCS tWHWH2 tDS tDH Data 55h 30h In Progress Complete 10 for Chip Erase tVCS VCC Notes: 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”. 2. These waveforms are for the word mode. Figure 18. 45 Chip/Sector Erase Operation Timings Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N AC CHARACTERISTICS tRC Addresses VA VA VA tACC tCE CE# tCH tOE OE# tOEH tDF WE# tOH High Z DQ7 Complement Complement DQ6–DQ0 Status Data Status Data True Valid Data High Z True Valid Data Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Figure 19. Data# Polling Timings (During Embedded Algorithms) June 14, 2005 Am29LV641G 46 A D V A N C E I N F O R M A T I O N AC CHARACTERISTICS tAHT tAS Addresses tAHT tASO CE# tCEPH tOEH WE# tOEPH OE# tDH DQ6/DQ2 tOE Valid Status Valid Status Valid Status (first read) (second read) (stops toggling) Valid Data Valid Data Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle Figure 20. Toggle Bit Timings (During Embedded Algorithms) Enter Embedded Erasing WE# Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Suspend Read Erase Resume Erase Suspend Read Erase Erase Complete DQ6 DQ2 Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6. Figure 21. 47 DQ2 vs. DQ6 Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N AC CHARACTERISTICS Temporary Sector Unprotect Parameter JEDEC Std Description tVIDR VID Rise and Fall Time (See Note) tRSP RESET# Setup Time for Temporary Sector Unprotect All Speed Options Unit Min 500 ns Min 4 µs Note: Not 100% tested. VID RESET# VID VSS, VIL, or VIH VSS, VIL, or VIH tVIDR tVIDR Program or Erase Command Sequence CE# WE# tRSP Figure 22. June 14, 2005 Temporary Sector Group Unprotect Timing Diagram Am29LV641G 48 A D V A N C E I N F O R M A T I O N AC CHARACTERISTICS VID VIH RESET# SA, A6, A1, A0 Valid* Valid* Sector Group Protect or Unprotect Data 60h 60h Valid* Verify 40h Status Sector Group Protect: 150 µs, Sector Group Unprotect: 15 ms 1 µs CE# WE# OE# * For sector group protect, A6 = 0, A1 = 1, A0 = 0. For sector group unprotect, A6 = 1, A1 = 1, A0 = 0. Figure 23. 49 Sector Group Protect and Unprotect Timing Diagram Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N AC CHARACTERISTICS Alternate CE# Controlled Erase and Program Operations Parameter Speed Options JEDEC Std Description 55R 70 Unit tAVAV tWC Write Cycle Time (Note 1) Min 55 70 ns tAVWL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 40 ns tDVEH tDS Data Setup Time Min 40 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE# Pulse Width Min 45 ns tEHEL tCPH CE# Pulse Width High Min 30 ns tWHWH1 tWHWH1 Word Programming Operation (Note 2) Typ 7 µs tWHWH1 tWHWH1 Accelerated Word Programming Operation (Note 2) Typ 4 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.6 sec Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. June 14, 2005 Am29LV641G 50 A D V A N C E I N F O R M A T I O N AC CHARACTERISTICS 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase Data# Polling Addresses PA tWC tAS tAH tWH WE# tGHEL OE# tWHWH1 or 2 tCP CE# tWS tCPH tBUSY tDS tDH DQ7# Data tRH A0 for program 55 for erase DOUT PD for program 30 for sector erase 10 for chip erase RESET# RY/BY# Notes: 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data. 3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device. 4. Waveforms are for the word mode. Figure 24. 51 Alternate CE# Controlled Write (Erase/Program) Operation Timings Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N ERASE AND PROGRAMMING PERFORMANCE Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.6 4 sec Chip Erase Time 50 Excludes 00h programming prior to erasure (Note 4) Word Program Time 7 210 µs Accelerated Word Program Time 4 120 µs Chip Program Time (Note 3) 18 54 sec sec Excludes system level overhead (Note 5) Notes: 1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 3.0 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 10 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Description Min Max Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V –100 mA +100 mA VCC Current Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. TSOP & FBGA PIN CAPACITANCE Parameter Symbol Parameter Description CIN Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Test Setup VIN = 0 VOUT = 0 VIN = 0 Typ Max Unit TSOP 6 7.5 Fine-pitch BGA 4.2 5.0 TSOP 8.5 12 Fine-pitch BGA 5.4 6.5 TSOP 7.5 9 Fine-pitch BGA 3.9 4.7 Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. DATA RETENTION Parameter Description Test Conditions Min Unit 150°C 10 Years 125°C 20 Years Minimum Pattern Data Retention Time June 14, 2005 Am29LV641G 52 A D V A N C E I N F O R M A T I O N PHYSICAL DIMENSIONS FBE063—63-Ball Fine-Pitch Ball Grid Array (FBGA) 11 x 12 mm package Dwg rev AF; 10/99 53 Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N PHYSICAL DIMENSIONS LAA064–64-Ball Fortified Ball Grid Array (Fortified BGA) 13 x 11 mm package 54 Am29LV641G June 14, 2005 A D V A N C E I N F O R M A T I O N PHYSICAL DIMENSIONS TS 048—48-Pin Standard TSOP ) Dwg rev AA; 10/99 Note: For reference only. BSC is an ANSI standard for Basic Space Centering. June 14, 2005 Am29LV641G 55 A D V A N C E I N F O R M A T I O N REVISION SUMMARY Revision A (August 9, 2002) Customer Lockable: SecSi Sector NOT Programmed or Protected at the factory. Initial Release. Revision A+1 (August 28, 2002) Added second bullet, SecSi sector-protect verify text and figure 3. Ordering Information Common Flash Memory Interface (CFI) Corrected order numbers and package markings. Added Marking Convention explanation about Enhanced-VIO markings. Revision A+2 (October 18, 2002) Changed wording in last sentence of third paragraph from, “...the autoselect mode.” to “...reading array data.” Changed CFI website address. Command Definitions Global Connection Diagram Changed wording in last sentence of first paragraph from, “...resets the device to reading array data.” to ...”may place the device to an unknown state. A reset command is then required to return the device to reading array data.” Removed the 56–pin SSOP package diagram. TSOP Pin Capacitance Special Package Handling Instructions Added fine-pitch BGA capacitance. Modified wording. Revision A+3 (June 14, 2005) Ordering Information Cover Page / Title Page Changed the VIO for 55R to equal 3.0 V–3.6 V and added 55 ns to Valid Combinations table. Added Spansion EOL cover page and EOL disclaimer to AMD title page. Added 55R speed grade and removed 90 and 100 speed grade throughout datasheet. Trademarks Copyright © 2001 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. 56 Am29LV641G June 14, 2005