NJSEMI BF392 Npn silicon planar high voltage transistor Datasheet

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BF391
BF392
BF393
NPN Silicon Planar
sistors
DESCRIPTION
These plastic encapsulated general purpose transistor* are
designed for applications requiring high breakdown voltage
and low capacitance.
The E-line package is formed by Injection moulding a SILICONE
plastic specially selected to provide a rugged one-piece encapsulation resistant to severe environments and allow the high
junction temperature operation normally associated with metal
can devices.
PLASTIC E-LINE <TO-92)
E-line encapsulated devices are approved for use in military.
Industrial and professional equipments.
Alternative lead configurations are available as plug-in replacements of TO-5/39 and TO-18
metal can types, and for flat mounting.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
BF391
BF392
BF393
Unit
Collector-Base Voltage
VCBO
200
250
300
V
Collector-Emitter Voltage
VC£0
200
250
300
V
Emitter-Base Voltage
VEBO
6
6
6
V
Continuous Collector Currant
Ic
500
mA
Power Dissipation at Tm,b=25°C
atTc.M = 25°C
Plot
625
1.5
mW
W
Operating and Storage Temperature Range
TjlT,,,
-55 to +175
°C
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance Junction to Ambient
Junction to Case
Symbol
Maximum
Unit
Rth(l-amb)
220
80
°C/W
°C/W
Rthlj-cau)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BF391 Series
CHARACTERISTICS (at 25°C ambient temperature unless otherwise stated).
Parameter
Symbol
Min.
VIBRICBO
200
250
300
Collector-base
breakdown voltage
BF391
BF392
BF393
Collector-emitter
breakdown voltage
BF391
BF392
BF393
Emitter-base
breakdown voltage
BF391
BF392
BF393
VIBRIEBO
Collector cut-off
current
BF391
BF392
BF393
ICBO
Emitter cut-off
current
BF391
BF392
BF393
IEBO
—
All types
All types
hFE
25
40
_
Static forward current
transfer ratio
VfBRICEO
Collector-emitter saturation voltage
VCE(M1)
Collector-base saturation voltage
VBE<J«)
Transition frequency
Collector-base capacitance
200
250
300
Max.
:
—
Unit
Test Conditions
V
V
V
IC = 100MA, IE=0
V
V
V
lc = 10mA, IB=0*
6.0
6.0
6.0
-
V
V
V
lE = 100)iA, lc=0
-
0.1
0.1
0.1
^A
HA
/^A
VCB = 160V, IE = 0
VCB=200V, IE=0
VCB = 200V, IE=0
0.1
0.1
0.1
KA
MA
*<A
VBE=4V, lc = 0
VBE = 6V,IC = 0
VBE=6V, lc = 0
lc = 1mA, VCE = 10V<
lc - 10mA, VCE = 10V*
—
2.0
V
lc=20mA, IB = 2mA
-
2.0
V
lc = 20mA, lB = 2mA
fj
50
-
MHz
lc = 10mA, VCE = 20V
f=20MHz
Cr.
—
1.6
PF
•Measured under pulsed conditions. Pulse width =300(48. Duty cycle <2%.
VCE=60V, IE-0
f«1MHz
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