Diode Semiconductor Korea BYV27-50(Z) - - - BYV27-600(Z) VOLTAGE RANGE: 50 --- 600 V CURRENT: 2.0, 1.9,1.6 A SUPER FAST RECTIFIERS FEATURES Low cost Diffused junction DO - 15 Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and sim ilar solvents MECHANICAL DATA Case: JEDEC DO-15,m olded plastic Term inals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Dimensions in millimeters Weight: 0.014 ounces,0.39 gram s Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unless otherwise specified. Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%. BYV27 BYV27 BYV27 BYV27 BYV27 BYV27 BYV27 UNITS -100 -50 -150 -200 -300 -400 -600 Maximum recurrent peak reverse voltage V RRM 50 100 150 200 300 400 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 420 V Maximum DC blocking voltage V DC 50 100 150 200 300 400 600 V 1.6 A 40.0 A 1.25 V Maximum average forw ard rectif ied current 9.5mm lead length, @TA =75 IF(AV) 2.0 1.9 Peak forw ard surge current superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ IF=IF(AV) Maximum reverse current at rated DC blocking voltage 50.0 IFSM 10ms single half -sine-w ave @TA =25 @TA =100 VF 0.98 1.05 5.0 IR Maximum reverse recovery time (Note1) t rr Typical junction capacitance (Note2) CJ 62 Typical thermal resistance (Note3) Rθ JA 100 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 Operating junction temperature range Storage temperature range A 100.0 25 50 ns pF /W NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.1V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea BYV27-50 (Z) - - - BYV27-600(Z) FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 10 N 1. 50 N 1. +0.5A D.U.T. 0 PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1cm SETTIMEBASEFOR10 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . 100 B Y V 27 -50 - B Y V 2 7-20 0 40 20 B Y V 27 -600 10 4.0 2.0 B Y V 27 -300 -B Y V 27-4 00 1.0 0.4 TJ=25 P uls e W idth = 30 0 µ s 0.2 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 2.0 1.6 1.2 BYV27-600 200 100 40 20 10 0.1 0.2 0.4 1 2 4 10 20 REVERSE VOLTAGE, VOLTS 40 100 BYV27-50 - BYV27-200 0.4 0 0 100 50 150 250 200 AMBIENT TEMPERATURE, FIG.5-- PEAK FORWORD SURGE CURRENT PEAK FORWORD SURGE CURRENT AMPERES JUNCTION CAPACITANCE, pF f=1.0M H z T J =25℃ 400 BYV27-300 BYV27-400 0.8 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 -- TYPICAL JUNCTION CAPACITANCE Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375"(9.5mm)Lead Length 60 50 8.3ms Single Half Sine-Wave 40 BYV27-50 - BYV27-400 30 20 BYV27-600 10 0 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60HZ www.diode.kr