DSK BYV27-100 Super fast rectifier Datasheet

Diode Semiconductor Korea BYV27-50(Z) - - - BYV27-600(Z)
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 2.0, 1.9,1.6 A
SUPER FAST RECTIFIERS
FEATURES
Low cost
Diffused junction
DO - 15
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and sim ilar solvents
MECHANICAL DATA
Case: JEDEC DO-15,m olded plastic
Term inals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Dimensions in millimeters
Weight: 0.014 ounces,0.39 gram s
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYV27 BYV27 BYV27 BYV27 BYV27 BYV27 BYV27
UNITS
-100
-50
-150
-200
-300
-400
-600
Maximum recurrent peak reverse voltage
V RRM
50
100
150
200
300
400
600
V
Maximum RMS voltage
V RMS
35
70
105
140
210
280
420
V
Maximum DC blocking voltage
V DC
50
100
150
200
300
400
600
V
1.6
A
40.0
A
1.25
V
Maximum average forw ard rectif ied current
9.5mm lead length,
@TA =75
IF(AV)
2.0
1.9
Peak forw ard surge current
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ IF=IF(AV)
Maximum reverse current
at rated DC blocking voltage
50.0
IFSM
10ms single half -sine-w ave
@TA =25
@TA =100
VF
0.98
1.05
5.0
IR
Maximum reverse recovery time
(Note1)
t rr
Typical junction capacitance
(Note2)
CJ
62
Typical thermal resistance
(Note3)
Rθ JA
100
TJ
- 55 ----- + 150
TSTG
- 55 ----- + 150
Operating junction temperature range
Storage temperature range
A
100.0
25
50
ns
pF
/W
NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.1V DC.
3. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
BYV27-50 (Z) - - - BYV27-600(Z)
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
10
N 1.
50
N 1.
+0.5A
D.U.T.
0
PULSE
GENERATOR
(NOTE2)
(+)
25VDC
(approx)
(-)
-0.25A
OSCILLOSCOPE
(NOTE 1)
1
NONINDUCTIVE
-1.0A
1cm
SETTIMEBASEFOR10 ns/cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
100
B Y V 27 -50 - B Y V 2 7-20 0
40
20
B Y V 27 -600
10
4.0
2.0
B Y V 27 -300 -B Y V 27-4 00
1.0
0.4
TJ=25
P uls e W idth = 30 0 µ s
0.2
0.1
0.6 0.8
1.0
1.2
1.4
1.6
1.8
2.0
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT
AMPERES
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
2.0
1.6
1.2
BYV27-600
200
100
40
20
10
0.1 0.2
0.4
1
2
4
10
20
REVERSE VOLTAGE, VOLTS
40 100
BYV27-50 - BYV27-200
0.4
0
0
100
50
150
250
200
AMBIENT TEMPERATURE,
FIG.5-- PEAK FORWORD SURGE CURRENT
PEAK FORWORD SURGE CURRENT
AMPERES
JUNCTION CAPACITANCE, pF
f=1.0M H z
T J =25℃
400
BYV27-300 BYV27-400
0.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.375"(9.5mm)Lead Length
60
50
8.3ms Single Half
Sine-Wave
40
BYV27-50 - BYV27-400
30
20
BYV27-600
10
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60HZ
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