CHA3688aQDG RoHS COMPLIANT 12.5-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier monolithic circuit. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UMS UMS A3688A A3667A A3688A YYWW YYWWG Main Features ■ Broadband performances: 12.5-30GHz ■ 2.1dB noise figure ■ 26dB gain ■ 26dBm Output IP3 ■ DC bias: Vd = 4V @ Id = 85 / 115mA ■ 24L-QFN4x4 ■ MSL1 Main Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure OIP3 3rd order intercept point (16 - 30GHz) Ref. : DSCHA3688aQDG1035 - 07 Feb 11 1/18 Min 12.5 21 24 Typ 26 2.1 26 Max 30 2.5 Unit GHz dB dB dBm Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA3688aQDG 12.5-30GHz Low Noise Amplifier Main Characteristics (low current configuration) Tamb = +25°C, Vd1=Vd2=Vd3= +4V and Pads B, D not connected Symbol Parameter Min Typ Max Unit Freq Frequency range 12.5 30 GHz Gain Linear Gain (12.5 - 24GHz) 22 25 dB Linear Gain (24.5 - 30GHz) 20 23 dB G Gain flatness (12.5 - 24GHz) ±1.5 dB Gain flatness (24.5 - 30GHz) ±2 dB NF Noise figure (12.5 - 16GHz) 2.3 2.6 dB Noise figure (16.5 - 24GHz) 2.0 2.3 dB Noise figure (24.5 - 30GHz) 2.2 2.5 dB S11 Input return loss (12.5 - 16GHz) (27 – 30GHz) 2.5:1 3.0:1 dB Input return loss (16.5 - 26.5GHz) 2.0:1 2.5:1 dB S22 Output return loss 2.0:1 2.5:1 dB 3rd order intercept point @ Pout SCL < 8dBm OIP3 23 25 dBm from 16 to 30GHz P1dB Output power at 1dB gain compression 13 14 dBm Id Drain bias current 85 115 mA Vd Drain bias voltage 4 V These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". Main Characteristics (high current configuration) Tamb = +25°C, Vd1=Vd2=Vd3= +4V and Pads B, D Grounded Symbol Parameter Min Typ Max Unit Freq Frequency range 12.5 30 GHz Gain Linear Gain (12.5 - 24GHz) 23 26 dB Linear Gain (24.5 - 30GHz) 21 24 dB G Gain flatness ±2 dB NF Noise figure (12.5 - 16GHz) 2.3 2.6 dB Noise figure (16.5 - 24GHz) 2.0 2.3 dB Noise figure (24.5 - 30GHz) 2.2 2.5 dB S11 Input return loss (12.5 - 16GHz) (27 – 30GHz) 2.5:1 3.0:1 dB Input return loss (16.5 - 26.5GHz) 2.0:1 2.5:1 dB S22 Output return loss 2.0:1 2.5:1 dB 3rd order intercept point @ Pout SCL < 8dBm OIP3 24 26 dBm from 16 to 30GHz P1dB Output power at 1dB gain compression 14 15 dBm Id Drain bias current 115 150 mA Vd Drain bias voltage 4 V These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". Ref. : DSCHA3688aQDG1035 - 07 Feb 11 2/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 12.5-30GHz Low Noise Amplifier CHA3688aQDG Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 4.5V V Pin RF input power 10 dBm (2) Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. Typical Bias Conditions Tamb.= +25°C Symbol Pad No Vd1 23 Vd2 21 Vd3 19 B 9 D 11 Parameter DC Drain voltage DC Drain voltage DC Drain voltage DC Gate voltage DC Gate voltage Ref. : DSCHA3688aQDG1035 - 07 Feb 11 3/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Values Unit 4 V 4 V 4 V Connected to ground or not Specifications subject to change without notice CHA3688aQDG 12.5-30GHz Low Noise Amplifier Device thermal performances All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below than the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. A de-rating must be applied on the dissipated power if the Tcase temperature cannot be maintained below than the maximum temperature specified (see the curve Pdiss. Max) in order to guarantee the nominal device life time (MTTF). Ref. : DSCHA3688aQDG1035 - 07 Feb 11 4/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 12.5-30GHz Low Noise Amplifier CHA3688aQDG Typical Package Sij parameters for low current configuration Tamb = +25°C, Vd1=Vd2=Vd3= +4V, Id = 90mA and Pads B, D not connected Freq S11 PhS11 S12 PhS12 S21 PhS21 S22 (GHz) (dB) (°) (dB) (°) (dB) (°) (dB) 2.0 -1.3 66 -63.8 -33 -67.2 -134 -1.4 3.0 -1.2 14 -62.8 61 -57.0 24 -1.5 4.0 -1.1 -34 -62.9 140 -57.9 30 -1.7 5.0 -1.0 -79 -68.4 99 -31.8 -63 -2.4 6.0 -0.9 -124 -61.8 -70 -13.3 -143 -4.8 7.0 -1.3 -178 -59.6 71 1.2 118 -9.9 8.0 -2.6 117 -61.0 -1 9.1 24 -19.3 9.0 -4.8 42 -62.0 -111 15.9 -62 -23.9 10.0 -5.6 -27 -59.3 164 19.5 -144 -14.5 11.0 -5.3 -83 -53.6 134 22.0 142 -12.9 12.0 -4.8 -128 -52.4 94 23.7 74 -14.1 13.0 -4.8 -167 -55.4 43 24.8 13 -15.3 14.0 -5.2 157 -51.0 33 25.8 -44 -15.3 15.0 -6.1 122 -56.9 36 26.8 -101 -13.7 16.0 -7.6 91 -57.5 176 27.0 -157 -12.2 17.0 -9.4 56 -47.2 -157 27.0 151 -10.3 18.0 -12.0 26 -51.8 92 27.1 101 -9.0 19.0 -14.5 -6 -49.0 67 27.3 49 -8.8 20.0 -17.2 -28 -58.8 30 26.8 0 -9.6 21.0 -20.2 -34 -49.9 34 26.4 -46 -10.4 22.0 -16.7 -69 -49.0 40 25.9 -93 -13.6 23.0 -14.6 -107 -47.2 20 25.3 -140 -15.7 24.0 -13.3 -146 -48.4 -5 24.7 176 -15.7 25.0 -12.2 -175 -48.2 -3 24.2 129 -17.2 26.0 -10.5 161 -50.6 -12 23.7 86 -15.7 27.0 -8.6 130 -47.7 2 23.2 38 -13.7 28.0 -7.7 91 -45.5 -17 22.9 -9 -13.2 29.0 -7.7 53 -47.8 47 22.0 -60 -13.4 30.0 -6.4 2 -37.9 -51 21.1 -116 -14.9 31.0 -4.9 -55 -42.9 -24 18.5 -176 -14.0 32.0 -4.4 -106 -37.5 -65 14.5 134 -11.3 33.0 -3.1 -141 -44.7 -110 10.9 84 -7.8 34.0 -2.1 -172 -43.4 -69 6.4 38 -5.1 35.0 -1.2 162 -46.5 27 1.3 -6 -3.5 36.0 -1.2 139 -34.6 -70 -4.4 -44 -2.3 37.0 -1.2 122 -33.9 -90 -10.7 -73 -1.6 38.0 -1.2 105 -32.7 -103 -17.8 -98 -1.3 39.0 -1.6 90 -38.1 -114 -24.8 -113 -1.6 40.0 -2.6 71 -39.0 -118 -32.8 -85 -2.8 Ref. : DSCHA3688aQDG1035 - 07 Feb 11 5/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 PhS22 (°) 61 0 -60 -120 -178 126 87 -14 -159 136 89 58 27 -6 -40 -70 -111 -149 -179 149 130 125 117 122 118 102 79 39 -5 -55 -96 -133 -162 173 150 131 113 93 75 Specifications subject to change without notice CHA3688aQDG 12.5-30GHz Low Noise Amplifier Typical Package Sij parameters for high current configuration Tamb = +25°C, Vd1=Vd2=Vd3= +4V, Id = 115mA and Pads B, D Grounded Freq S11 PhS11 S12 PhS12 S21 PhS21 S22 (GHz) (dB) (°) (dB) (°) (dB) (°) (dB) 2.0 -1.3 66 -75.4 159 -77.1 115 -1.4 3.0 -1.2 14 -62.1 -168 -56.8 7 -1.5 4.0 -1.1 -34 -74.0 65 -57.0 6 -1.7 5.0 -1.0 -79 -79.6 -146 -30.6 -61 -2.6 6.0 -0.9 -124 -84.9 160 -12.4 -144 -5.0 7.0 -1.3 -178 -63.2 24 1.8 118 -9.8 8.0 -2.7 117 -64.3 31 9.9 23 -20.6 9.0 -4.9 42 -73.9 84 16.6 -62 -27.6 10.0 -5.7 -27 -56.5 -150 20.2 -145 -13.9 11.0 -5.3 -83 -57.7 126 22.7 142 -12.4 12.0 -4.8 -128 -54.9 86 24.3 74 -13.5 13.0 -4.7 -167 -55.2 30 25.4 13 -14.8 14.0 -5.1 158 -53.6 116 26.4 -44 -15.4 15.0 -6.2 122 -48.5 -47 27.2 -100 -13.0 16.0 -7.4 91 -57.7 140 27.6 -156 -11.6 17.0 -9.4 54 -55.6 135 27.6 152 -9.8 18.0 -11.6 27 -51.6 119 27.7 103 -8.7 19.0 -14.0 -5 -51.0 75 27.9 52 -8.5 20.0 -16.4 -29 -48.8 58 27.5 2 -9.0 21.0 -19.3 -48 -49.5 59 27.2 -44 -10.0 22.0 -16.8 -72 -48.5 29 26.7 -92 -13.0 23.0 -15.0 -109 -47.6 25 26.2 -139 -15.5 24.0 -13.7 -149 -49.0 -17 25.4 177 -15.9 25.0 -12.0 -176 -47.4 3 24.9 131 -18.0 26.0 -10.3 158 -48.6 2 24.5 87 -16.6 27.0 -9.0 129 -47.1 -24 23.9 38 -14.4 28.0 -8.3 91 -38.4 -21 23.4 -7 -14.2 29.0 -7.5 51 -42.0 16 22.8 -58 -14.2 30.0 -6.3 2 -40.8 -34 22.0 -115 -14.9 31.0 -5.1 -57 -41.5 -56 19.4 -175 -14.6 32.0 -4.5 -107 -37.7 -58 15.3 134 -11.4 33.0 -3.0 -142 -43.9 -115 11.8 84 -7.8 34.0 -2.1 -173 -50.3 -135 7.2 38 -5.2 35.0 -1.2 162 -39.6 -15 2.1 -6 -3.6 36.0 -1.2 139 -34.6 -45 -3.9 -45 -2.3 37.0 -1.4 122 -32.7 -105 -10.2 -74 -1.6 38.0 -1.3 105 -38.2 -109 -16.9 -92 -1.4 39.0 -1.7 90 -38.3 -142 -22.1 -91 -1.8 40.0 -2.4 70 -39.4 -105 -25.1 -73 -2.1 Ref. : DSCHA3688aQDG1035 - 07 Feb 11 6/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 PhS22 (°) 61 0 -61 -120 -178 128 92 -18 -168 130 84 53 21 -8 -44 -75 -112 -150 179 148 128 117 112 116 113 102 75 39 -6 -54 -98 -133 -163 172 148 129 112 92 75 Specifications subject to change without notice CHA3688aQDG 12.5-30GHz Low Noise Amplifier Typical Board Measurements Tamb = +25°C, Vd1=Vd2=Vd3= +4V Id = 85mA Pads B, D not connected (low current configuration) Measurements are given in the package access planes. Losses are de-embedded. Gain and return losses versus frequency Noise figure versus frequency Ref. : DSCHA3688aQDG1035 - 07 Feb 11 7/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA3688aQDG 12.5-30GHz Low Noise Amplifier Typical Board Measurements Tamb = +25°C, Vd1=Vd2=Vd3= +4V Id = 115mA Pads B, D Grounded (high current configuration) Measurements are given in the package access planes. Losses are de-embedded. Gain and return losses versus frequency Noise figure versus frequency Ref. : DSCHA3688aQDG1035 - 07 Feb 11 8/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 12.5-30GHz Low Noise Amplifier CHA3688aQDG Typical Board Measurements Measurements are given in the package access planes. Losses are de-embedded. Tamb = +25°C, Vd1=Vd2=Vd3= +4V Id = 85/115mA Output power -1dB for low and high current configurations 115mA 85mA Ref. : DSCHA3688aQDG1035 - 07 Feb 11 9/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA3688aQDG 12.5-30GHz Low Noise Amplifier Typical Board Measurements Tamb = -40°C / +25°C / +85°C, Vd1=Vd2=Vd3= +4V Measurements are given in the package’s access plans. Losses are de-embedded. Gain measurement for low current configuration Pads B, D not connected 30 -40°C 28 +25°C 26 dBS21 (dB) 24 22 +85°C 20 18 16 14 12 12 14 16 18 20 22 24 Frequency (GHz) 26 28 30 Gain measurement for high current configuration Pads B, D Grounded 30 -40°C 28 +25°C 26 dBS21 (dB) 24 22 +85°C 20 18 16 14 12 12 14 Ref. : DSCHA3688aQDG1035 - 07 Feb 11 16 18 20 22 24 Frequency (GHz) 10/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 26 28 30 Specifications subject to change without notice 12.5-30GHz Low Noise Amplifier CHA3688aQDG Typical Board Measurements Tamb = -40°C / +25°C / +85°C, Vd1=Vd2=Vd3= +4V Measurements are given in the connectors’ access plans. Losses are not de-embedded. Output power -1dB measurement for low current configuration Pads B, D not connected 17 16.5 16 15.5 Pout-1dB (dBm) 15 14.5 14 13.5 13 12.5 12 11.5 11 10.5 10 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Frequency (GHz) Output power -1dB measurement for high current configuration Pads B, D Grounded 17 16.5 16 15.5 Pout-1dB (dBm) 15 14.5 14 13.5 13 12.5 12 11.5 11 10.5 10 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Frequency (GHz) Ref. : DSCHA3688aQDG1035 - 07 Feb 11 11/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA3688aQDG 12.5-30GHz Low Noise Amplifier Typical Board Measurements Tamb = -40°C / +25°C / +85°C, Vd1=Vd2=Vd3= +4V Id = 85mA Pads B, D not connected (low current configuration) Measurements are given in the connectors’ access plans. Losses are not de-embedded. Output IP3 versus input power @ 12GHz Output IP3 versus input power @ 20GHz -40°C -40°C +85°C +85°C +25°C +25°C 12GHz 20GHz Output IP3 versus input power @ 28GHz Output IP3 versus input power @ 30GHz -40°C -40°C +85°C +85°C +25°C +25°C 28GHz Ref. : DSCHA3688aQDG1035 - 07 Feb 11 30GHz 12/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA3688aQDG 12.5-30GHz Low Noise Amplifier Typical Board Measurements Tamb = -40°C / +25°C / +85°C, Vd1=Vd2=Vd3= +4V Id = 115 mA Pads B, D = GND (high current configuration) Measurements are given in the connectors’ access plans. Losses are not de-embedded. Output IP3 versus input power @ 12GHz Output IP3 versus input power @ 20GHz -40°C -40°C +85°C +25°C +85°C +25°C 12GHz 20GHz Output IP3 versus input power @ 28GHz Output IP3 versus input power @ 30GHz +25°C -40°C +85°C -40°C +85°C +25°C 28GHz Ref. : DSCHA3688aQDG1035 - 07 Feb 11 30GHz 13/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA3688aQDG 12.5-30GHz Low Noise Amplifier Package outline (1) Matt tin, Lead Free Units : From the standard : (Green) mm JEDEC 220 (VGGD) 25- GND MO- 1- Nc 2- GND 9- B 10- Nc 17- GND 18- Nc 3- GND 11- D 19- Vd3 45678- 1213141516- 2021222324- RF in GND GND Nc Nc Nc GND GND RF out GND Nc Vd2 Nc Vd1 Nc (1) The package outline drawing included to this data-sheet is given for indication. Refer to the application note AN0017 (http://www.ums-gaas.com) for exact package dimensions. (2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref. : DSCHA3688aQDG1035 - 07 Feb 11 14/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 12.5-30GHz Low Noise Amplifier CHA3688aQDG Definition of the Sij reference planes The reference planes used for Sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). The input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. Then, the given Sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "Evaluation mother board". 3.18 Ref. : DSCHA3688aQDG1035 - 07 Feb 11 15/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 3.18 Specifications subject to change without notice CHA3688aQDG 12.5-30GHz Low Noise Amplifier Evaluation mother board ■ Compatible with the proposed footprint. ■ Based on typically Ro4003 / 8mils or equivalent. ■ Using a micro-strip to coplanar transition to access the package. ■ Recommended for the implementation of this product on a module board. ■ Decoupling capacitors of 10nF ±10% are recommended for all DC accesses. ■ See application note AN0017 for details. Vd1 Gnd Vd2 B Ref. : DSCHA3688aQDG1035 - 07 Feb 11 Gnd 16/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Vd3 D Specifications subject to change without notice 12.5-30GHz Low Noise Amplifier CHA3688aQDG Chip Biasing options This chip is self-biased, and flexibility is provided by the access to number of pads. The internal DC electrical schematic is given in order to use these pads in a safe way. The requirement is not to exceed Vds = 3.5Volt (internal Drain to Source voltage ). We propose two standard biasings: Low Noise and low consumption: Vd = 4V and B & D leads non connected (NC). Idd = 85mA & Pout-1dB = 14dBm Typical. Low Noise and higher output power: Vd = 4V and B, D grounded Idd = 115mA & Pout-1dB = 15dBm Typical. Note Due to ESD protection circuits, RFin and RFout are DC grounded and an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses. The DC connections (Vd1, Vd2 and Vd3) do not include any decoupling capacitor in package, therefore it is mandatory to provide a good external DC decoupling (typically 10nF) on the PC board, as close as possible to the package. Ref. : DSCHA3688aQDG1035 - 07 Feb 11 17/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA3688aQDG 12.5-30GHz Low Noise Amplifier Recommended package footprint Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot print recommendations. SMD mounting procedure For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017. Recommended environmental management Refer to the application note AN0019 available at http://www.ums-gaas.com for environmental data on UMS package products. Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products. Ordering Information QFN 4x4 RoHS compliant package: CHA3688aQDG/XY Stick: XY = 20 Tape & reel: XY = 21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA3688aQDG1035 - 07 Feb 11 18/18 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice