Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-34143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • 800 micron Gate Width • Low Cost Surface Mount Small Plastic Package SOT-343 (4 lead SC-70) Specifications Pin Connections and Package Marking DRAIN 1.9 GHz; 4 V, 60 mA (Typ.) • 0.5 dB Noise Figure SOURCE 4Px • Tape-and-Reel Packaging Option Available SOURCE GATE • 17.5 dB Associated Gain • 20 dBm Output Power at 1 dB Gain Compression Note: Top View. Package marking provides orientation and identification. • 31.5 dBm Output 3rd Order Intercept “4P” = Device code “x” = Date code character. A new character is assigned for each month, year. Applications • Tower Mounted Amplifier and Low Noise Amplifier for GSM/TDMA/CDMA Base Stations • LNA for Wireless LAN, WLL/ RLL and MMDS Applications • General Purpose Discrete PHEMT for other Ultra Low Noise Applications Description Agilent’s ATF-34143 is a high dynamic range, low noise PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Based on its featured performance, ATF-34143 is ideal for the first stage of base station LNA due to the excellent combination of low noise figure and high linearity[1]. The device is also suitable for applications in Wireless LAN, WLL/RLL, MMDS, and other systems requiring super low noise figure with good intercept in the 450 MHz to 10 GHz frequency range. Note: 1. From the same PHEMT FET family, the larger geometry ATF-33143 may also be considered either for the higher linearity performance or easier circuit design for stability in the lower frequency bands (800-900 MHz). 2 ATF-34143 Absolute Maximum Ratings[1] Symbol Parameter Units Absolute Maximum VDS VGS Drain - Source Voltage[2] Gate - Source Voltage[2] V V 5.5 -5 VGD ID Gate Drain Voltage[2] Drain Current[2] V mA -5 Idss [3] Total Power Dissipation [4] RF Input Power mW dBm 725 17 Pdiss Pin max TCH TSTG Channel Temperature Storage Temperature °C °C 160 -65 to 160 θjc Thermal Resistance [5] °C/W 165 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. VGS = 0 volts. 4. Source lead temperature is 25°C. Derate 6 mW/°C for TL > 40°C. 5. Thermal resistance measured using 150°C Liquid Crystal Measurement method. 6. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss. These conditions are acceptable as long as the maximum Pdiss and Pin max ratings are not exceeded. Product Consistency Distribution Charts [7] 250 120 +0.6 V Cpk = 1.37245 Std = 0.66 9 Wafers Sample Size = 450 100 200 IDS (mA) 80 150 -3 Std 0V +3 Std 60 100 40 50 20 –0.6 V 0 0 2 4 VDS (V) 6 0 29 8 30 31 32 33 34 35 OIP3 (dBm) Figure 1. Typical/Pulsed I-V Curves[6]. (VGS = -0.2 V per step) 120 Figure 2. OIP3 @ 2 GHz, 4 V, 60 mA. LSL=29.0, Nominal=31.8, USL=35.0 Cpk = 2.69167 Std = 0.04 9 Wafers Sample Size = 450 100 120 Cpk = 2.99973 Std = 0.15 9 Wafers Sample Size = 450 100 80 80 -3 Std -3 Std +3 Std 60 60 40 40 20 20 0 0 0.2 0.4 0.6 0.8 NF (dB) Figure 3. NF @ 2 GHz, 4 V, 60 mA. LSL=0.1, Nominal=0.47, USL=0.8 Notes: 7. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. 0 16 16.5 17 +3 Std 17.5 18 18.5 19 GAIN (dB) Figure 4. Gain @ 2 GHz, 4 V, 60 mA. LSL=16.0, Nominal=17.5, USL=19.0 8. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test requirements. Circuit losses have been de-embedded from actual measurements. 3 ATF-34143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical device Symbol Idss [1] Min. Typ.[2] 90 118 Max. 145 V mA -0.65 — - 0.5 60 -0.35 — VDS = 1.5 V, gm = Idss /VP VGD = 5 V mmho µA 180 230 — 500 VGD = VGS = -4 V VDS = 4 V, IDS = 60 mA VDS = 4 V, IDS = 30 mA µA dB — 30 0.5 0.5 300 0.8 f = 900 MHz f = 2 GHz VDS = 4 V, IDS = 60 mA VDS = 4 V, IDS = 60 mA VDS = 4 V, IDS = 30 mA dB dB f = 900 MHz f = 2 GHz +5 dBm Pout /Tone VDS = 4 V, IDS = 60 mA VDS = 4 V, IDS = 60 mA VDS = 4 V, IDS = 30 mA dB dBm f = 900 MHz +5 dBm Pout /Tone 1 dB Compressed f = 2 GHz Intercept Point [3] VDS = 4 V, IDS = 60 mA dBm 31 VDS = 4 V, IDS = 60 mA VDS = 4 V, IDS = 30 mA dBm 20 19 f = 900 MHz VDS = 4 V, IDS = 60 mA dBm 18.5 Parameters and Test Conditions Saturated Drain Current VDS = 1.5 V, VGS = 0 V VP [1] Id Pinchoff Voltage Quiescent Bias Current gm[1] IGDO Transconductance Gate to Drain Leakage Current Igss NF Gate Leakage Current Noise Figure Ga Associated Gain OIP3 P1dB 3rd Output Order Intercept Point [3] VDS = 1.5 V, IDS = 10% of Idss VGS = 0.34 V, VDS = 4 V f = 2 GHz Units mA 16 0.4 17.5 17 29 21.5 31.5 30 19 Notes: 1. Guaranteed at wafer probe level 2. Typical value determined from a sample size of 450 parts from 9 wafers. 3. Using production test board. Input 50 Ohm Transmission Line Including Gate Bias T (0.5 dB loss) Input Matching Circuit Γ_mag = 0.30 Γ_ang = 56° (0.4 dB loss) DUT 50 Ohm Transmission Line Including Drain Bias T (0.5 dB loss) Output Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements. 4 ATF-34143 Typical Performance Curves 35 1 20 ASSOCIATED GAIN (dB) OIP3, P1dB (dBm) 30 25 20 15 P1dB 10 NOISE FIGURE (dB) OIP3 15 10 5 20 40 60 80 0.4 3V 4V 3V 4V 0 0 0.6 0.2 3V 4V 5 0.8 0 0 100 120 140 0 20 IDSQ (mA) 40 60 80 100 0 120 20 Figure 6. OIP3 and P1dB vs. IDS and VDS Tuned for NF @ 4 V, 60 mA at 2 GHz. [1,2] Figure 7. Associated Gain vs. Current (Id) and Voltage (VD) at 2 GHz. [1,2] 35 40 60 80 100 120 CURRENT (mA) CURRENT (mA) Figure 8. Noise Figure vs. Current (Id) and Voltage (VDS) at 2 GHz. [1,2] 25 0.7 OIP3 25 20 15 P1dB 10 3V 4V 5 0 0.6 20 NOISE FIGURE (dB) ASSOCIATED GAIN (dB) OIP3, P1dB (dBm) 30 15 10 5 3V 4V 20 40 60 80 100 20 0.2 3V 4V 40 60 80 100 120 0 20 40 60 80 100 120 CURRENT (mA) CURRENT (mA) Figure 10. Associated Gain vs. Current (Id) and Voltage (VD) at 900 MHz. [1,2] Figure 11. Noise Figure vs. Current (Id) and Voltage (VDS) at 900 MHz. [1,2] IDSQ (mA) Figure 9. OIP3 and P1dB vs. IDS and VDS Tuned for NF @ 4 V, 60 mA at 900 MHz. [1,2] 0.3 0 0 120 0.4 0.1 0 0 0.5 25 1.2 1.0 Ga (dB) Fmin (dB) 20 0.8 0.6 15 0.4 60 mA 40 mA 20 mA 0.2 0 0 2.0 4.0 6.0 FREQUENCY (GHz) Figure 12. Fmin vs. Frequency and Current at 4 V. 10 60 mA 40 mA 20 mA 5 0 1.0 2.0 3.0 4.0 5.0 6.0 FREQUENCY (GHz) Figure 13. Associated Gain vs. Frequency and Current at 4 V. Notes: 1. Measurements made on a fixed toned production test board that was tuned for optimal gain match with reasonable noise figure at 4 V, 60 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match, and a realizable match based on production test board requirements. Circuit losses have been de-embedded from actual measurements. 2. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm is approached. 5 1.5 33 85 °C 25 °C -40 °C 1.0 Ga (dB) NF (dB) 20 15 0.5 P1dB, OIP3 (dBm) 31 29 OIP3 27 85 °C 25 °C -40 °C 25 23 P1dB 21 19 10 0 2000 4000 6000 0 8000 35 5.0 4.5 30 Gain OP1dB OIP3 NF 25 20 0 2000 4000 6000 3.5 3.0 2.5 15 2.0 1.5 10 1.0 5 0.5 0 17 4.0 8000 0 0 20 40 60 80 100 120 140 5.0 27 4.5 24 4.0 21 3.5 Gain OP1dB OIP3 NF 18 15 3.0 2.5 12 2.0 9 1.5 6 1.0 3 0.5 0 0 0 20 40 60 80 100 120 IDSQ (mA) Figure 17. NF, Gain, OP1dB and OIP3 vs. IDS at 4 V and 5.8 GHz Tuned for Noise Figure. [1] 25 25 20 20 15 15 P1dB (dBm) 30 P1dB (dBm) IDSQ (mA) Figure 16. NF, Gain, OP1dB and OIP3 vs. IDS at 4 V and 3.9 GHz Tuned for Noise Figure. [1] NOISE FIGURE (dB) FREQUENCY (MHz) Figure 15. P1dB, IP3 vs. Frequency and Temperature at VDS = 4 V, IDS = 60 mA. [1] GAIN (dB), OP1dB, and OIP3 (dBm) FREQUENCY (GHz) Figure 14. Fmin and Ga vs. Frequency and Temperature at VDS = 4 V, IDS = 60 mA. 10 5 10 5 3V 4V 0 3V 4V 0 -5 -5 0 50 100 150 IDS (mA) Figure 18. P1dB vs. IDS Active Bias Tuned for NF @ 4V, 60 mA at 2 GHz. 0 50 100 150 IDS (mA) Figure 19. P1dB vs. IDS Active Bias Tuned for min NF @ 4V, 60 mA at 900 MHz. Note: 1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm is approached. NOISE FIGURE (dB) 25 GAIN (dB), OP1dB, and OIP3 (dBm) ATF-34143 Typical Performance Curves, continued 6 ATF-34143 Power Parameters tuned for Power, VDS = 4 V, IDSQ = 120 mA Freq (GHz) P1dB (dBm) Id (mA) G1dB (dB) PAE1dB (%) P3dBm (dBm) Id (mA) PAE3dB (%) Gamma Out_mag (Mag) Gamma Out_ang (Degrees) 0.9 1.5 1.8 2 4 6 20.9 21.7 21.3 22.0 22.7 23.3 114 115 111 106 110 115 25.7 21.9 20.5 19.5 12.7 9.2 27 32 30 37 40 41 22.8 23.1 23.0 23.7 23.6 24.2 108 95 105 115 111 121 44 53 47 50 47 44 0.34 0.31 0.30 0.28 0.26 0.24 136 152 164 171 -135 -66 ATF-34143 Power Parameters tuned for Power, VDS = 4 V, IDSQ = 60 mA Freq (GHz) P1dB (dBm) Id (mA) G1dB (dB) PAE1dB (%) P3dBm (dBm) Id (mA) PAE3dB (%) Gamma Out_mag (Mag) Gamma Out_ang (Degrees) 0.9 1.5 1.8 2 4 6 18.2 18.7 18.8 18.8 20.2 21.2 75 58 57 59 66 79 27.5 24.5 23.0 22.2 13.9 9.9 22 32 33 32 38 37 20.5 20.8 21.1 21.9 22.0 23.5 78 59 71 81 77 102 36 51 45 47 48 46 0.48 0.45 0.42 0.40 0.25 0.18 102 117 126 131 -162 -77 80 80 50 Pout (dBm), G (dB), PAE (%) Pout (dBm), G (dB), PAE (%) 60 40 30 20 10 Pout Gain PAE 0 -10 -30 -20 -10 0 10 40 20 Pout Gain PAE 0 20 Pin (dBm) Figure 20. Swept Power Tuned for Power at 2 GHz, VDS = 4 V, IDSQ = 120 mA. -20 -30 -20 -10 0 10 20 Pin (dBm) Figure 21. Swept Power Tuned for Power at 2 GHz, VDS = 4 V, IDSQ = 60 mA. Notes: 1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm is approached. 2. PAE(%) = ((Pout – Pin) / Pdc) x 100 3. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device. 7 ATF-34143 Typical Scattering Parameters, VDS = 3 V, IDS = 20 mA Freq. GHz Mag. 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.96 0.91 0.87 0.81 0.78 0.75 0.72 0.69 0.65 0.64 0.65 0.66 0.69 0.72 0.75 0.77 0.80 0.83 0.85 0.86 0.85 0.85 0.88 S11 Ang. -37 -60 -76 -104 -115 -126 -145 -162 166 139 114 89 67 48 30 10 -10 -29 -44 -55 -72 -88 -101 dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. MSG/MAG dB 20.07 19.68 18.96 17.43 16.70 16.00 14.71 13.56 11.61 10.01 8.65 7.33 6.09 4.90 3.91 2.88 1.74 0.38 -0.96 -2.06 -3.09 -4.22 -5.71 10.079 9.642 8.867 7.443 6.843 6.306 5.438 4.762 3.806 3.165 2.706 2.326 2.017 1.758 1.568 1.393 1.222 1.045 0.895 0.789 0.701 0.615 0.518 153 137 126 106 98 90 75 62 38 16 -5 -27 -47 -66 -86 -105 -126 -145 -161 -177 166 149 133 -29.12 -26.02 -24.29 -22.27 -21.62 -21.11 -20.45 -19.83 -19.09 -18.49 -18.06 -17.79 -17.52 -17.39 -17.08 -16.95 -16.95 -17.39 -17.86 -18.13 -18.13 -18.06 -18.94 0.035 0.050 0.061 0.077 0.083 0.088 0.095 0.102 0.111 0.119 0.125 0.129 0.133 0.135 0.140 0.142 0.142 0.135 0.128 0.124 0.124 0.125 0.113 68 56 48 34 28 23 15 7 -8 -21 -35 -49 -62 -75 -88 -103 -118 -133 -145 -156 -168 177 165 0.40 0.34 0.32 0.29 0.28 0.26 0.25 0.23 0.22 0.22 0.23 0.25 0.29 0.34 0.39 0.43 0.47 0.53 0.58 0.62 0.65 0.68 0.71 -35 -56 -71 -98 -110 -120 -140 -156 174 146 118 91 67 46 28 10 -10 -28 -42 -57 -70 -85 -103 24.59 22.85 21.62 19.85 19.16 18.55 17.58 16.69 15.35 14.25 13.35 10.91 9.71 8.79 8.31 7.56 6.83 6.18 5.62 5.04 3.86 3.00 2.52 ATF-34143 Typical Noise Parameters Ang. 13 27 31 48 57 66 83 102 138 174 -151 -118 -88 -63 -43 Rn/50 0.16 0.14 0.13 0.11 0.10 0.09 0.07 0.06 0.03 0.03 0.05 0.10 0.18 0.30 0.46 Ga dB 21.8 18.3 17.8 16.4 16.0 15.6 14.8 14.0 12.6 11.4 10.3 9.4 8.6 8.0 7.5 25 20 MSG MSG/MAG and S21 (dB) VDS = 3 V, IDS = 20 mA Freq. Fmin Γopt GHz dB Mag. 0.5 0.10 0.90 0.9 0.11 0.85 1.0 0.11 0.84 1.5 0.14 0.77 1.8 0.17 0.74 2.0 0.19 0.71 2.5 0.23 0.65 3.0 0.29 0.59 4.0 0.42 0.51 5.0 0.54 0.45 6.0 0.67 0.42 7.0 0.79 0.42 8.0 0.92 0.45 9.0 1.04 0.51 10.0 1.16 0.61 15 10 MAG S21 5 0 -5 -10 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 23. MSG/MAG and |S21|2 vs. Frequency at 3 V, 20 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 8 ATF-34143 Typical Scattering Parameters, VDS = 3 V, IDS = 40 mA Freq. GHz Mag. 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.96 0.89 0.85 0.79 0.76 0.74 0.70 0.67 0.64 0.64 0.65 0.66 0.69 0.73 0.76 0.78 0.80 0.83 0.86 0.87 0.86 0.86 0.88 S11 Ang. -40 -64 -81 -109 -121 -131 -150 -167 162 135 111 87 65 46 28 9 -11 -30 -44 -56 -72 -88 -102 dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. MSG/MAG dB 21.32 20.79 19.96 18.29 17.50 16.75 15.39 14.19 12.18 10.54 9.15 7.80 6.55 5.33 4.33 3.30 2.15 0.79 -0.53 -1.61 -2.60 -3.72 -5.15 11.645 10.950 9.956 8.209 7.495 6.876 5.880 5.120 4.063 3.365 2.867 2.454 2.125 1.848 1.647 1.462 1.281 1.095 0.941 0.831 0.741 0.652 0.553 151 135 124 104 96 88 74 61 38 16 -5 -26 -46 -65 -84 -104 -123 -142 -158 -174 169 153 137 -30.46 -27.33 -25.68 -23.61 -22.97 -22.38 -21.51 -20.92 -19.83 -19.02 -18.34 -17.86 -17.46 -17.20 -16.83 -16.65 -16.65 -17.08 -17.52 -17.72 -17.72 -17.79 -18.64 0.030 0.043 0.052 0.066 0.071 0.076 0.084 0.090 0.102 0.112 0.121 0.128 0.134 0.138 0.144 0.147 0.147 0.140 0.133 0.130 0.130 0.129 0.117 68 56 49 36 32 27 19 12 -1 -14 -28 -42 -55 -69 -84 -99 -114 -130 -142 -154 -166 179 166 0.29 0.24 0.24 0.23 0.23 0.22 0.22 0.22 0.21 0.22 0.24 0.28 0.32 0.37 0.41 0.45 0.50 0.55 0.60 0.64 0.66 0.69 0.72 -43 -70 -88 -118 -130 -141 -160 -176 157 131 105 81 60 40 23 5 -14 -31 -45 -59 -73 -88 -105 25.89 24.06 22.82 20.95 20.24 19.57 18.45 17.55 16.00 14.78 12.91 11.03 9.93 9.07 8.59 7.84 7.15 6.50 5.96 5.39 4.21 3.43 2.95 ATF-34143 Typical Noise Parameters 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.10 0.13 0.14 0.17 0.21 0.23 0.29 0.35 0.47 0.6 0.72 0.85 0.97 1.09 1.22 0.87 0.82 0.80 0.73 0.70 0.66 0.60 0.54 0.46 0.41 0.39 0.41 0.45 0.52 0.61 13 28 32 50 61 68 87 106 144 -178 -142 -109 -80 -56 -39 Rn/50 - Ga dB 30 0.16 0.13 0.13 0.1 0.09 0.08 0.06 0.05 0.03 0.03 0.06 0.12 0.21 0.34 0.50 23.0 19.6 19.2 17.7 17.1 16.7 15.8 14.9 13.4 12.1 10.9 9.9 9.1 8.4 8.0 20 25 MSG/MAG and S21 (dB) VDS = 3 V, IDS = 40 mA Freq. Fmin Γopt GHz dB Mag. Ang. MSG 15 10 MAG S21 5 0 -5 -10 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 24. MSG/MAG and |S21|2 vs. Frequency at 3 V, 40 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 9 ATF-34143 Typical Scattering Parameters, VDS = 4 V, IDS = 40 mA Freq. GHz Mag. 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.95 0.89 0.85 0.78 0.73 0.70 0.67 0.64 0.63 0.64 0.66 0.69 0.72 0.76 0.78 0.80 0.84 0.86 0.87 0.86 0.86 0.89 0.89 S11 Ang. -40 -65 -82 -109 -131 -150 -167 162 135 111 87 65 47 28 9 -11 -29 -44 -56 -72 -88 -102 -101.85 dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. MSG/MAG dB 21.56 21.02 20.19 18.49 16.93 15.57 14.36 12.34 10.70 9.32 7.98 6.74 5.55 4.55 3.53 2.39 1.02 -0.30 -1.38 -2.40 -3.53 -4.99 -4.99 11.973 11.252 10.217 8.405 7.024 6.002 5.223 4.141 3.428 2.923 2.506 2.173 1.894 1.689 1.501 1.317 1.125 0.966 0.853 0.759 0.666 0.563 0.563 151 135 123 104 87 73 61 37 16 -6 -26 -46 -65 -85 -104 -124 -143 -160 -176 167 151 134 134 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.12 0.13 0.13 0.14 0.15 0.15 0.14 0.13 0.13 0.13 0.13 0.12 0.12 0.030 0.042 0.051 0.064 0.074 0.081 0.087 0.098 0.108 0.117 0.124 0.130 0.134 0.141 0.145 0.145 0.140 0.133 0.130 0.131 0.130 0.119 0.119 68 56 48 36 27 19 12 -1 -13 -27 -41 -54 -68 -82 -97 -113 -128 -141 -152 -165 -180 168 168 0.33 0.27 0.26 0.24 0.22 0.21 0.20 0.19 0.20 0.21 0.24 0.29 0.34 0.38 0.42 0.47 0.53 0.58 0.62 0.65 0.68 0.71 0.71 -39 -63 -80 -109 -131 -150 -167 165 138 111 86 63 42 26 8 -11 -29 -43 -58 -71 -86 -103 -103 26.01 24.28 23.02 21.18 20.46 19.77 18.70 17.75 16.26 15.02 12.93 11.14 10.09 9.24 8.79 8.09 7.35 6.76 6.19 5.62 4.43 3.60 3.15 ATF-34143 Typical Noise Parameters 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.10 0.13 0.14 0.17 0.20 0.22 0.28 0.34 0.45 0.57 0.69 0.81 0.94 1.06 1.19 0.87 0.82 0.80 0.73 0.70 0.66 0.60 0.54 0.45 0.40 0.38 0.39 0.43 0.51 0.62 13 27 31 49 60 67 85 104 142 180 -144 -111 -82 -57 -40 Rn/50 - Ga dB 0.16 0.14 0.13 0.11 0.10 0.09 0.07 0.05 0.03 0.03 0.05 0.11 0.20 0.32 0.47 22.8 19.4 18.9 17.4 16.9 16.4 15.6 14.8 13.3 12.0 10.9 9.9 9.1 8.5 8.1 30 25 MSG/MAG and S21 (dB) VDS = 4 V, IDS = 40 mA Freq. Fmin Γopt GHz dB Mag. Ang. MSG 20 15 10 MAG S21 5 0 -5 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 25. MSG/MAG and |S21|2 vs. Frequency at 4 V, 40 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 10 ATF-34143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA Freq. GHz Mag. 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.95 0.89 0.85 0.78 0.75 0.73 0.69 0.67 0.64 0.63 0.64 0.66 0.69 0.73 0.76 0.78 0.81 0.84 0.86 0.87 0.86 0.86 0.89 S11 Ang. -41 -65 -83 -111 -122 -133 -151 -168 161 134 111 86 65 46 28 9 -11 -30 -44 -56 -72 -88 -101.99 dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. MSG/MAG dB 21.91 21.33 20.46 18.74 17.92 17.16 15.78 14.56 12.53 10.88 9.49 8.15 6.92 5.72 4.73 3.70 2.57 1.20 -0.12 -1.21 -2.21 -3.35 -4.81 12.454 11.654 10.549 8.646 7.873 7.207 6.149 5.345 4.232 3.501 2.983 2.557 2.217 1.932 1.723 1.531 1.344 1.148 0.986 0.870 0.775 0.680 0.575 150 134 123 103 95 87 73 60 37 16 -5 -26 -46 -65 -84 -104 -124 -143 -159 -175 168 151 135 -31.06 -28.18 -26.56 -24.44 -23.74 -23.22 -22.38 -21.62 -20.54 -19.58 -18.79 -18.27 -17.79 -17.46 -16.95 -16.71 -16.71 -17.02 -17.46 -17.59 -17.59 -17.65 -18.42 0.028 0.039 0.047 0.060 0.065 0.069 0.076 0.083 0.094 0.105 0.115 0.122 0.129 0.134 0.142 0.146 0.146 0.141 0.134 0.132 0.132 0.131 0.120 68 57 49 38 33 29 22 15 3 -10 -24 -38 -51 -65 -79 -94 -111 -126 -139 -150 -163 -178 169 0.29 0.24 0.23 0.21 0.21 0.20 0.19 0.19 0.18 0.19 0.21 0.24 0.28 0.33 0.38 0.42 0.47 0.52 0.58 0.62 0.65 0.68 0.71 -41 -67 -84 -114 -125 -136 -155 -171 162 135 109 84 62 42 25 7 -12 -29 -43 -58 -71 -86 -104 26.48 24.75 23.51 21.59 20.83 20.19 19.08 18.09 16.53 15.23 12.89 11.22 10.21 9.36 8.94 8.23 7.56 6.94 6.37 5.78 4.60 3.79 3.33 ATF-34143 Typical Noise Parameters Ang. 15 30 34 53 62 72 91 111 149 -173 -137 -104 -76 -53 -37 Rn/50 0.14 0.12 0.12 0.10 0.10 0.09 0.07 0.05 0.03 0.04 0.07 0.14 0.26 0.41 0.60 Ga dB 24.5 20.7 20.2 18.5 17.7 17.2 16.3 15.4 13.7 12.3 11.1 10.0 9.2 8.6 8.2 30 25 20 MSG/MAG and S21 (dB) VDS = 4 V, IDS = 60 mA Freq. Fmin Γopt GHz dB Mag. 0.5 0.11 0.84 0.9 0.14 0.78 1.0 0.15 0.77 1.5 0.20 0.69 1.8 0.23 0.66 2.0 0.26 0.62 2.5 0.33 0.55 3.0 0.39 0.50 4.0 0.53 0.43 5.0 0.67 0.39 6.0 0.81 0.39 7.0 0.96 0.42 8.0 1.10 0.47 9.0 1.25 0.54 10.0 1.39 0.62 MSG 15 10 MAG S21 5 0 -5 -10 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 26. MSG/MAG and |S21|2 vs. Frequency at 4 V, 60 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 11 Noise Parameter Applications Information Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true Fmin is calculated. Fmin represents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50Ω, to an impedance represented by the reflection coefficient Γo. The designer must design a matching network that will present Γo to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to Fmin only when the device is presented with Γo. If the reflection coefficient of the matching network is other than Γo, then the noise figure of the device will be greater than Fmin based on the following equation. NF = Fmin + 4 Rn |Γs – Γo | 2 Zo (|1 + Γo| 2) (1 – Γs| 2) Where Rn /Zo is the normalized noise resistance, Γo is the optimum reflection coefficient required to produce Fmin and Γs is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. Γo is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower Γo as compared to narrower gate width devices. Typically for FETs, the higher Γo usually infers that an impedance much higher than 50Ω is required for the device to produce Fmin. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at 900 MHz, when airwwound coils (Q > 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using muiltilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB Fmin of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on amplifier noise figure is covered in Agilent Application 1085. 12 ATF-34143 SC-70 4 Lead, High Frequency Nonlinear Model Optimized for 0.1 – 6.0 GHz R EQUATION La=0.1 nH EQUATION Lb=0.1 nH EQUATION Lc=0.8 nH EQUATION Ld=0.6 nH EQUATION Rb=0.1 OH EQUATION Ca=0.15 pF EQUATION Cb=0.15 pF L R=0.1 OH LOSSYL L=Lb R=Rb SOURCE L=Lb R=Rb L=Lc C L LOSSYL LOSSYL GATE_IN L=Lb R=Rb D L=La *.5 C=Cb C C=Ca G L SOURCE L=La S L LOSSYL LOSSYL DRAIN_OUT L=Lb R=Rb L=Lb R=Rb This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to L=Ld the measured data in this data sheet. For future improvements Agilent reserves the right to change these models without prior notice. ATF-34143 Die Model MESFET MODEL * * STATZMODEL = FET IDS model NFET=yes PFET= IDSMOD=3 VTO=–0.95 BETA= Beta LAMBDA=0.09 ALPHA=4.0 B=0.8 TNOM=27 IDSTC= VBI=.7 Gate model Parasitics DELTA=.2 GSCAP=3 CGS=cgs pF GDCAP=3 GCD=Cgd pF Breakdown RG=1 RD=Rd RS=Rs LG=Lg nH LD=Ld nH LS=Ls nH CDS=Cds pF CRF=.1 RC=Rc GSFWD=1 GSREV=0 GDFWD=1 GDREV=0 VJR=1 IS=1 nA IR=1 nA IMAX=.1 XTI= N= EG= Noise FNC=01e+6 R=.17 P=.65 C=.2 Model scal factors (W=FET width in microns) XX D EQUATION Cds=0.01 * W/200 EQUATION Beta=0.06 * W/200 EQUATION Rd=200/W NFETMESFET G XX EQUATION Rs=.5 * 200/W EQUATION Cgs=0.2 * W/200 EQUATION Cgd=0.04 * W/200 EQUATION Lg=0.03 * 200/W S XX EQUATION Ld=0.03 * 200/W EQUATION Ls=0.01 * 200/W EQUATION Rc=500 * 200/W MODEL=FET W=800 µm S 13 Part Number Ordering Information Part Number ATF-34143-TR1 No. of Devices 3000 Container 7" Reel ATF-34143-TR2 ATF-34143-BLK 10000 100 13" Reel antistatic bag Package Dimensions Outline 43 (SOT-343/SC-70 4 lead) 1.30 (0.051) BSC 1.30 (.051) REF 2.60 (.102) E 1.30 (.051) E1 0.85 (.033) 0.55 (.021) TYP 1.15 (.045) BSC e 1.15 (.045) REF D h A b TYP A1 L θ DIMENSIONS SYMBOL A A1 b C D E e h E1 L θ MAX. MIN. 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0 (0) 0.35 (0.014) 0.25 (0.010) 0.20 (0.008) 0.10 (0.004) 2.10 (0.083) 1.90 (0.075) 2.20 (0.087) 2.00 (0.079) 0.65 (0.025) 0.55 (0.022) 0.450 TYP (0.018) 1.35 (0.053) 1.15 (0.045) 0.35 (0.014) 0.10 (0.004) 10 0 DIMENSIONS ARE IN MILLIMETERS (INCHES) C TYP 14 Device Orientation REEL TOP VIEW END VIEW 4 mm CARRIER TAPE 8 mm 4PX USER FEED DIRECTION 4PX 4PX 4PX COVER TAPE Tape Dimensions For Outline 4T P P2 D P0 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) K0 8° MAX. A0 DESCRIPTION 5° MAX. B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.24 ± 0.10 2.34 ± 0.10 1.22 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.088 ± 0.004 0.092 ± 0.004 0.048 ± 0.004 0.157 ± 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.55 ± 0.05 4.00 ± 0.10 1.75 ± 0.10 0.061 ± 0.002 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 ± 0.30 0.255 ± 0.013 0.315 ± 0.012 0.010 ± 0.0005 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.4 ± 0.10 0.062 ± 0.001 0.205 ± 0.004 0.0025 ± 0.00004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies, Inc. Obsoletes 5968-7938E October 26, 2001 5988-4210EN