CR02AM-8 Thyristor Low Power Use REJ03G0351-0200 Rev.2.00 Mar.01.05 Features • IT (AV) : 0.3 A • VDRM : 400 V • IGT : 100 µA • Planar Passivation Type Outline PRSS0003EA-A (Package name: TO-92) 2 1. Cathode 2. Anode 3. Gate 3 1 3 2 1 Applications Solid state relay, leakage protector, fire alarm, timer, ring counter, electric blanket, protective circuit for acoustic equipment, strobe flasher, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Rev.2.00, Mar.01.2005, page 1 of 7 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 8 400 500 320 400 320 Unit V V V V V CR02AM-8 Parameter RMS on-state current Average on-state current Symbol IT (RMS) IT (AV) Ratings 0.47 0.3 Unit A A ITSM 10 A I2 t 0.4 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 0.1 0.01 6 6 0.1 – 40 to +125 – 40 to +125 0.23 W W V V A °C °C g Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine half wave 180° conduction, Ta = 30°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 1 kΩ. Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current Symbol IRRM IDRM Min. — — Typ. — — Max. 0.1 0.1 Unit mA mA On-state voltage VTM — — 1.6 V Ta = 25°C, ITM = 0.6 A, instantaneous value Gate trigger voltage VGT — — 0.8 V Tj = 25°C, VD = 6 V, Note3 IT = 0.1 A Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM, RGK = 1 kΩ Gate trigger current IGT 1 — 100Note2 µA Tj = 25°C, VD = 6 V, Note3 IT = 0.1 A Holding current IH — — 3 mA Rth (j-a) — — 180 °C/W Tj = 25°C, VD = 12 V, RGK = 1 kΩ Junction to ambient Thermal resistance Test conditions Tj = 125°C, VRRM applied Tj = 125°C, VDRM applied, RGK = 1 kΩ Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible. Item A B C D E IGT (µA) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 1 kΩ resistance between the gate and cathode. 3. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1kΩ Switch 2 60Ω TUT V1 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) Rev.2.00, Mar.01.2005, page 2 of 7 CR02AM-8 Performance Curves 101 7 Ta = 25°C 5 3 2 Rated Surge On-State Current 10 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 100 7 5 3 2 10–1 7 5 3 2 7 5 3 2 VFGM = 6V PGM = 0.1W PG(AV) = 0.01W VGT = 0.8V IGT = 100µA (Tj = 25°C) VGD = 0.2V IFGM = 0.1A 10–2 10–2 2 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 1 2 3 4 5 7 101 2 3 4 5 7 10 2 × 100 (%) 103 7 5 3 2 Typical Example 102 7 5 3 2 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 0.9 Gate Trigger Voltage (V) 3 Gate Current (mA) 1.0 Distribution 0.8 Typical Example 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Rev.2.00, 4 Gate Trigger Current vs. Junction Temperature 10–1 7 5 3 2 5 Gate Characteristics Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 100 6 Conduction Time (Cycles at 60Hz) Mar.01.2005, page 3 of 7 Transient Thermal Impedance (°C/W) Gate Voltage (V) 7 5 3 2 7 On-State Voltage (V) 102 101 8 0 100 10–2 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 7 5 3 2 9 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 180 160 140 120 100 80 60 40 20 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 Time (s) CR02AM-8 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) 0.8 160 0.7 140 θ 120 360° 0.6 180° 120° 0.5 60° 0.4 90° θ = 30° 0.3 θ 0.2 360° Resistive, inductive loads 0.1 0 0 0.1 0.2 Ambient Temperature (°C) Average Power Dissipation (W) Maximum Average Power Dissipation (Single-Phase Half Wave) 20 θ = 30° 60° 0 90° 120° 0.1 0.2 180° 0.4 0.3 Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 0.7 Ambient Temperature (°C) Average Power Dissipation (W) 40 Average On-State Current (A) 180° 120° 0.6 90° 0.5 60° 0.4 θ = 30° 0.3 θ 0.2 θ 360° 0.1 140 θ 120 360° 0 0.1 0.2 0.3 80 60 40 20 0 0.5 0.4 θ Resistive loads Natural convection 100 θ = 30° Resistive loads 0 0 0.1 60° 90° 120° 0.2 180° 0.4 0.3 0.5 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 0.8 160 DC 0.7 180° 0.6 270° 120° 0.5 60° 0.4 90° θ = 30° 0.3 θ 0.2 360° 0.1 0 Resistive, inductive loads 0 0.1 0.2 0.3 0.4 Average On-State Current (A) Mar.01.2005, page 4 of 7 0.5 Ambient Temperature (°C) Average Power Dissipation (W) 60 Average On-State Current (A) 0.8 Rev.2.00, 80 0 0.4 0.3 Resistive, inductive loads Natural convection 100 Resistive, inductive loads Natural convection 140 θ 360° 120 100 θ = 30° 60° 90° 120° 180° 270° DC 80 60 40 20 0 0 0.1 0.2 0.3 0.4 Average On-State Current (A) 0.5 Typical Example RGK = 1kΩ 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 Breakover Voltage vs. Gate to Cathode Resistance 120 Typical Example Tj = 125°C 100 80 60 40 20 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Junction Temperature (°C) Gate to Cathode Resistance (kΩ) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature 100 80 60 #2 40 #1 Typical Example # 1 IGT(25°C)=10µA 20 # 2 IGT(25°C)=66µA Tj = 125°C, RGK = 1kΩ 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Holding Current (mA) 120 102 7 5 3 2 101 7 5 3 2 Tj = 25°C Typical Example IH(25°C) = 1mA IGT(25°C) = 25µA Distribution Typical Example 100 7 5 3 2 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Holding Current vs. Gate to Cathode Resistance Repetitive Peak Reverse Voltage vs. Junction Temperature 500 Typical Example IGT(25°C) IH(1kΩ) 1.6mA # 1 13µA # 2 59µA 1.8mA 400 #1 300 #2 200 100 Tj = 25°C 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Mar.01.2005, page 5 of 7 × 100 (%) Rate of Rise of Off-State Voltage (V/µs) Gate to Cathode Resistance (kΩ) Rev.2.00, Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) 160 Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) × 100 (%) Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) Breakover Voltage vs. Junction Temperature × 100 (%) CR02AM-8 160 Typical Example 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) CR02AM-8 Gate Trigger Current (tw) Gate Trigger Current (DC) × 100 (%) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 2 #1 Typical Example IGT(25°C) # 1 10µA # 2 # 2 66µA 102 7 5 4 3 2 Tj = 25°C 101 100 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Rev.2.00, Mar.01.2005, page 6 of 7 CR02AM-8 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003EA-A Package Name MASS[Typ.] TO-92 Unit: mm 0.23g φ5.0Max 12.5Max 5.0Max 4.4 1.25 1.25 1.3 3.9Max Circumscribed circle φ0.7 Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 500 Type name Lead form Vinyl sack 500 Type name – Lead forming code Form A8 Taping 2000 Type name – TB Note : Please confirm the specification about the shipping in detail. Rev.2.00, Mar.01.2005, page 7 of 7 Standard order code example CR02AM-8 CR02AM-8-A6 CR02AM-8-TB Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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