BAS33, BAS34 Vishay Semiconductors Small Signal Switching Diodes Features • • • • Silicon Planar Diodes Very low reverse current AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 9367 Applications • Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers Mechanical Data Case: DO-35 Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part Type differentiation Ordering code Type Marking Remarks BAS33 VRRM = 40 V BAS33-TAP or BAS33-TR BAS33 Ammopack/Tape and Reel BAS34 VRRM = 70 V BAS34-TAP or BAS34-TR BAS34 Ammopack/Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse voltage Part Symbol Value Unit BAS33 VR 30 V VR 60 V IFSM 2 A IF 200 mA BAS34 Peak forward surge current tp = 1 µs Forward continuous current Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range Document Number 85541 Rev. 1.7, 17-Aug-10 Test condition Symbol Value Unit l = 4 mm, TL = constant RthJA 350 K/W Tj 175 °C Tstg - 65 to + 175 °C For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BAS33, BAS34 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse current Part Symbol IF = 100 mA VF E ≤ 300 lx, VR IR E ≤ 300 lx, VR, Tj = 125 °C IR Forward voltage E ≤ 300 lx, VR = 15V Min. Max. Unit 1000 mV 1 IR BAS33 Typ. 3 nA 0.5 μA 0.5 1 nA 0.5 1 nA E ≤ 300 lx, VR = 30 V BAS34 IR Breakdown voltage IR = 5 µA, tp/T = 0.01, tp = 0.3 ms BAS33 V(BR) 40 V BAS34 V(BR) 70 V Diode capacitance VR = 0, f = 1 MHz CD 3 pF Typical Characteristics Tamb = 25 °C, unless otherwise specified 1000 10000 I F - Forward Current (mA) I R - Reverse Current (nA) V R = VRRM 1000 Scattering Limit 100 10 Tj = 25 °C 100 Scattering Limit 10 1 0.1 1 0 40 80 120 160 0 200 Tj - Junction Temperature (°C) 94 9079 94 9078 Figure 1. Reverse Current vs. Junction Temperature 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage Package Dimensions in millimeters (inches): DO-35 3.9 (0.154) max. 26 (1.024) min. 1.5 (0.059) 26 (1.024) min. 1.7 (0.067) 0.55. (0.022) max Cathode identification Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85541 Rev. 1.7, 17-Aug-10 [email protected], [email protected], [email protected] Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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