AP15TP1R0M
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Lower Gate Charge
D
D
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
SO-8
S
S
G
BVDSS
-150V
RDS(ON)
1Ω
ID
-1.1A
S
D
Description
AP15TP1R0 series are from Advanced Power innovated
design and silicon process technology to achieve the lowest
possible on-resistance and fast switching performance. It
provides the designer with an extreme efficient device for use
in a wide range of power applications.
G
S
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
.
Rating
Units
VDS
Drain-Source Voltage
-150
V
VGS
Gate-Source Voltage
+25
V
-1.1
A
-0.87
A
-4.4
A
2.5
W
ID@TA=25℃
ID@TA=70℃
IDM
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
Pulsed Drain Current
1
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
50
℃/W
1
201510131
AP15TP1R0M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-150
-
-
V
VGS=-10V, ID=-1A
-
-
1
Ω
VGS=-6V, ID=-0.8A
-
-
1.2
Ω
-1.2
-2
-4
V
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-10V, ID=-1A
-
3.4
-
S
IDSS
Drain-Source Leakage Current
VDS=-120V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+25V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-1A
-
12
19.2
nC
Qgs
Gate-Source Charge
VDS=-75V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
2.5
-
nC
td(on)
Turn-on Delay Time
VDS=-75V
-
9
-
ns
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
24
-
ns
tf
Fall Time
VGS=-10V
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
520
832
pF
Coss
Output Capacitance
VDS=-50V
-
33
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
pF
Min.
Typ.
IS=-2A, VGS=0V
-
-
-1.3
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-1A, VGS=0V,
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
70
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t < 10s ; 150 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP15TP1R0M
6
5
o
T A = 25 o C
4
- 10 V
-9.0V
-8.0V
- 7.0 V
- 6.0 V
V G = - 5.0 V
4
-ID , Drain Current (A)
5
-ID , Drain Current (A)
T A = 150 C
- 10 V
-9.0V
-8.0V
- 7.0 V
- 6.0 V
V G = - 5.0 V
3
2
3
2
1
1
0
0
0
2
4
6
8
10
0
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12
16
Fig 2. Typical Output Characteristics
2.4
900
I D = -1 A
V G =-10V
I D = -0.8 A
T A =25 ℃
2.0
820
.
780
Normalized RDS(ON)
860
RDS(ON) (mΩ)
8
-V DS , Drain-to-Source Voltage (V)
1.6
1.2
0.8
740
0.4
700
2
4
6
8
-100
10
-50
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2
I D = - 250uA
1
T j =150 o C
Normalized VGS(th)
-IS(A)
1.6
T j =25 o C
1.2
0.8
0.4
0.1
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP15TP1R0M
12
f=1.0MHz
1000
I D = -1A
V DS = -75V
800
8
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
600
C iss
400
4
200
2
C oss
C rss
0
0
0
4
8
12
0
16
40
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
120
160
200
Fig 8. Typical Capacitance Characteristics
10
Operation in this
area limited by
RDS(ON)
100us
1ms
10ms
100ms
1s
0.1
.
0.01
DC
T A =25 o C
Single Pulse
Normalized Thermal Response (R thja)
1
1
-ID (A)
80
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=150 oC/W
0.01
0.001
0.1
1
10
100
0.0001
1000
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
1.6
T j = -55 o C
V DS = -10V
-ID , Drain Current (A)
-ID , Drain Current (A)
8
1.2
0.8
T j =25 o C
6
T j =150 o C
4
0.4
2
0
0
25
50
75
100
125
T A , Ambient Temperature ( o C )
Fig 11. Drain Current v.s. Ambient
Temperature
150
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP15TP1R0M
4
2
I D = -1mA
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
3
2
1
0.4
0
0
-100
-50
T
0
j
50
100
150
0
, Junction Temperature ( o C)
50
100
150
o
T A , Ambient Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
2600
T j =25 o C
RDS(ON) (mΩ)
2200
1800
.
1400
1000
-6V
V GS = -10V
600
0
1
2
3
4
5
-I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP15TP1R0M
MARKING INFORMATION
Part Number
15TP1R0
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6