Diode Semiconductor Korea BYD33D(Z)---BYD33M(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.3 A FAST RECOVERY RECTIFIERS FEATURES Low cos t Diffus ed junction DO - 15 Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO--15,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Dimensions in millimeters Weight: 0.014ounces ,0.39 gram s Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%. BYD 33D BYD 33G BYD 33J BYD 33K BYD 33M UNITS Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Maximum RMS voltage V RMS 140 280 420 560 700 V Maximum DC blocking voltage V DC 200 200 600 800 1000 V Maximum average forw ard rectif ied current 9.5mm lead length, @TA =75 IF(AV) 1.3 A IFSM 20.0 A VF 1.3 V Peak forw ard surge current 10ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage ( @ 1.0A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 t rr Typical junction capacitance (Note2) CJ Typical thermal resistance (Note3) Rθ JA Storage temperature range A 100.0 Maximum reverse recovery time (Note1) Operating junction temperature range 1.0 IR 250 300 20 120 TJ -55 ---- + 150 TSTG - 55 ---- + 150 ns pF K/W NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea BYD33D(Z)---BYD33M(Z) FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 N.1. trr 10 N.1. +0.5A D.U.T. ( - ) (+) 50VDC (APPROX) (-) 0 PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) 1 N.1. -0.25A ( + ) -1.0A 1cm NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O SET TIMEBASEFOR 50/100 ns /cm 1.5 FIG.3 --PEAK FORWARD SURGE CURRENT Single Phase Half Wave 60HZ Resistive or Inductive Load 1.0 0.5 0.1 0.05 0.01 0.005 0 20 40 60 80 100 120 140 160 180 200 PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.2 --FORWARD DERATING CURVE 25 20 15 TJ =125 8.3ms Single Half Sine-Wave 10 5 1 AMBIENT TEMPERATURE, 10 100 NUMBER OF CYCLES AT 60 Hz FIG.4--TYPICAL FORWARD CHARACTERISTIC FIG.5--TYPICAL JUNCTION CAPACITANCE 100 10 T J =25 Pulse W idth=300 µ S 4 2 1.0 0.4 0.2 0.1 0.06 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS JUNCTION CAPACITANCE,pF INSTANTANEOUS FORWARD CURRENT AMPERES 1 200 100 60 40 20 10 6 TJ=25 f=1MHz 4 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE ,VOLTS www.diode.kr