Z ibo Seno Electronic Engineering Co., Ltd. D25XB05-D25XB100 25A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 350A Peak Ideal for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0 · 5S L A K M Lead Free Finish/RoHS Complian B S _ Mechanical Data J · · H P D Case: Molded Plastic Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 Polarity: Molded on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 in-lbs Maximum Weight: 6.6 grams (approx) Marking: Type Number · · · · · N C R E Min Max A 29.70 30.30 B 19.70 20.30 C 17.00 18.00 D 3.80 4.20 E 7.30 7.70 G 9.80 10.20 H 2.00 2.40 I 0.90 1.10 J 2.30 2.70 K I G Dim E 3.0 X 45° L 4.40 4.80 M 3.40 3.80 N 3.10 3.40 P 2.50 2.90 R 0.60 0.80 S 10.80 11.20 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Rectified Output Current (Note 1) @ TC = 100°C Non-Repetitive Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ IF = 12.5A Peak Reverse Current at Rated DC Blocking Voltage I2t @TC = 25°C @ TC = 125°C D25XB D25XB D25XB D25XB 05 10 20 20 D25XB D25XB D25XB Unit 60 80 100 VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 25 A IFSM 350 A VFM 1.05 V IR 10 500 µA I2t 510 A2s Typical Junction Capacitance (per element) (Note 2) Cj 85 pF Typical Thermal Resistance Junction to Case (Note 3) RqJC 0.6 °C/W Tj, TSTG -65 to +150 °C Rating for Fusing (t < 8.3ms) (Note 1) Operating and Storage Temperature Range Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink. D25XB05-D25XB100 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. D25XB05-D25XB100 with heatsink 25 20 15 10 without heatsink 5 Resistive or Inductive load 0 25 50 75 125 100 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 30 150 Tj = 25°C 10 1.0 0.1 Pulse width = 300µs 0.01 0 1.2 1.6 2.0 TJ = 25°C f = 1MHz Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 0.8 1000 Single half-sine-wave (JEDEC method) 400 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve Tj = 25°C 300 200 100 100 0 1 1 100 10 10 1.0 IR, INSTANTANEOUS REVERSE CURRENT (µA) 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current 1000 Tj = 150°C Tj = 125°C 100 Tj = 100°C 10 1.0 Tj = 25°C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics D25XB05-D25XB100 2 of 2 www.senocn.com Alldatasheet