Transistors SMD Type NPN Transistors BC849~BC850 (KC849~KC850) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features ● PNP complements: BC859 and BC860. 1 0.55 ● Low voltage (max. 45 V). +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● Low current (max. 100 mA) 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Collector - Base Voltage BC849 Collector - Emitter Voltage BC849 BC850 BC850 VCBO VCEO Rating Unit 30 50 30 V 45 VEBO 5 Collector Current - Continuous IC 100 Peak Collector Current ICM 200 IBM 200 PC 250 mW Rthja 500 K/W Emitter - Base Voltage Peak Base Current Collector Power Dissipation (Note.1) Thermal Resistance From Junction to Ambient (Note.1) Junction Temperature Storage Temperature Range TJ 150 Tstg -55 to 150 mA ℃ Note.1: Transistor mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Transistors SMD Type NPN Transistors BC849~BC850 (KC849~KC850) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Collector- base breakdown voltage BC849 BC850 Collector- emitter breakdown voltage BC849 BC850 Emitter - base breakdown voltage VCBO VCEO VEBO Collector-base cut-off current ICBO Emitter cut-off current IEBO Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) Base-Emitter Voltage DC current gain VBE BC849B,BC850B BC849C,BC850C BC849B,BC850B DC current gain Test Conditions Ic= 100 μA， IE= 0 Ic= 1 mA， IB= 0 IE= 100μA， IC= 0 Typ 50 V 30 45 5 15 nA VCB= 30 V , IE= 0,TJ=150℃ 5 uA 100 nA VEB= 5V , IC=0 IC=10 mA, IB=0.5mA (Note.1) 90 250 IC=100 mA, IB=5mA (Note.1) 200 500 IC=10 mA, IB=0.5mA (Note.2) 700 IC=100 mA, IB=5mA (Note.2) 900 IC=2 mA, VCE=5V (Note.2) 580 660 IC=10 mA, VCE=5V (Note.2) VCE= 5V, IC= 2mA 450 200 290 450 420 520 800 VCB= 10V, IC=ic= 0,f=1MHz 2.5 Emitter capacitance Ce VEB = 0.5V , IE=ie= 0,f=1MHz 11 fT pF IC=200uA,VCE=5V,RS=2KΩ; f=10Hz to 15.7KHz 4 IC=200uA,VCE=5V,RS=2KΩ; f=1KHz,B=200Hz 4 VCE= 5V, IC= 10mA,f=100MHz Note.1: VBEsat decreases by about 1.7 mV/K with increasing temperature. Note.2: VBE decreases by about 2 mV/K with increasing temperature. ■ Classification of hfe Type BC849B BC849C BC850B BC850C Range 200-450 420-800 200-450 420-800 Marking 2B* 2C* 2F* 2G* www.kexin.com.cn 700 770 Cc Transition frequency mV 240 Collector capacitance NF Unit VCB= 30 V , IE= 0 hFE Noise Figure Max 30 VCE= 5V, IC= 10uA BC849C,BC850C 2 Min dB 100 MHz Transistors SMD Type NPN Transistors BC849~BC850 (KC849~KC850) ■ Typical Characterisitics 300 handbook, full pagewidth VCE = 5 V hFE 200 100 0 10−2 10−1 1 10 102 IC (mA) 103 102 IC (mA) 103 BC849B; BC850B. Fig.2 DC current gain; typical values. 600 handbook, full pagewidth VCE = 5 V hFE 400 200 0 10−2 10−1 1 10 BC849C; BC850C. Fig.3 DC current gain; typical values. www.kexin.com.cn 3