APTGT400DA60D3G Boost chopper Trench + Field Stop IGBT3 Power Module 3 Q2 1 6 7 2 VCES = 600V IC = 400A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 500 400 800 ±20 1250 Tj = 125°C 800A @ 520V TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT400DA60D3G – Rev 1 March, 2011 Symbol VCES APTGT400DA60D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE = 15V IC = 400A Tj = 150°C VGE = VCE , IC = 6.4 mA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Max Unit 500 1.9 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGE=±15V, IC=400A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 400A RG = 1.5Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 400A RG = 1.5Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 400A Tj = 25°C RG = 1.5Ω Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Typ 24 1.5 0.75 nF 4.2 µC 110 50 490 ns 50 130 60 ns 530 70 3.2 3.4 15 15.5 mJ 2000 A Reverse diode ratings and characteristics IRRM IF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 400A VGE = 0V IF = 400A VR = 300V di/dt =4800A/µs Err Reverse Recovery Energy Min 600 Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C www.microsemi.com Typ Max 500 750 400 1.6 1.5 125 180 18.8 39.5 4.4 9.6 Unit V µA A 2 V ns µC mJ 2-5 APTGT400DA60D3G – Rev 1 March, 2011 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT400DA60D3G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight For terminals To Heatsink M6 M6 4000 -40 -40 -40 3 3 Typ Max 0.12 0.20 Unit °C/W V 175 125 125 5 5 350 °C N.m g D3 Package outline (dimensions in mm) 1° A www.microsemi.com 3-5 APTGT400DA60D3G – Rev 1 March, 2011 DÉTAIL A APTGT400DA60D3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 600 600 500 500 400 400 TJ=150°C IC (A) IC (A) TJ = 150°C 300 VGE=13V VGE=15V 300 VGE=9V 200 200 100 100 TJ=25°C 0 0 0 0.5 1 1.5 2 0 2.5 0.5 VCE (V) 35 TJ=25°C 25 E (mJ) IC (A) 2.5 VCE = 300V VGE = 15V RG = 1.5Ω TJ = 150°C 30 600 400 200 1.5 2 VCE (V) 3.5 Eoff 20 15 Err 10 TJ=150°C 5 Eon 0 0 5 6 7 8 9 10 0 11 200 Switching Energy Losses vs Gate Resistance 35 VCE = 300V VGE =15V IC = 400A TJ = 150°C 30 25 400 600 800 IC (A) VGE (V) Reverse Bias Safe Operating Area 1000 Eon 800 Eoff 20 IC (A) E (mJ) 3 Energy losses vs Collector Current Transfert Characteristics 800 1 15 600 400 10 Err 5 VGE=15V TJ=150°C RG=1.5Ω 200 0 0 0 2.5 5 7.5 Gate Resistance (ohms) 10 0 100 200 300 400 500 600 700 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 0.1 0.08 0.06 0.04 0.02 IGBT 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT400DA60D3G – Rev 1 March, 2011 Thermal Impedance (°C/W) 0.14 APTGT400DA60D3G Forward Characteristic of diode 600 ZCS 60 VCE=300V D=50% RG=1.5Ω TJ=150°C 500 400 Tc=85°C ZVS IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 40 Hard switching 20 300 200 TJ=150°C 100 TJ=25°C 0 0 0 100 200 300 IC (A) 400 0 500 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.25 Diode 0.2 0.9 0.15 0.7 0.1 0.05 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein www.microsemi.com 5-5 APTGT400DA60D3G – Rev 1 March, 2011 Rectangular Pulse Duration in Seconds