AVD002F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG(B) A DESCRIPTION: .100 X 45° ØD .088 x 45° CHAMFER The ASI AVD002F is Designed for C B FEATURES: • • • Omnigold™ Metalization System E F G H I MAXIMUM RATINGS 250 mA IC J K MAXIMUM DIM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B 1.050 / 26.67 C .245 / 6.22 .120 / 3.05 .140 / 3.56 .255 / 6.48 VCC 37 V D E .552 / 14.02 .572 / 14.53 10 W @ TC ≤ 100 OC F .790 / 20.07 .810 / 20.57 PDISS H .003 / 0.08 .007 / 0.18 I .052 / 1.32 .072 / 1.83 J .120 / 3.05 .130 / 3.30 -65 OC to +200 OC TJ O O TSTG -65 C to +150 C θ JC 10 OC/W CHARACTERISTICS SYMBOL ORDER CODE: ASI10552 O NONETEST CONDITIONS IC = 1 mA BVCER IC = 5 mA BVEBO IE = 1 mA ICES VCE = 35 V hFE VCE = 5.0 V ηC .210 / 5.33 K TC = 25 C BVCBO PG .285 / 7.24 G VCC = 35 V RBE = 10 Ω IC = 100 mA POUT = 2 W f = 1025 - 1150 MHz MINIMUM TYPICAL MAXIMUM UNITS 45 V 45 V 3.5 V 30 1.0 mA 300 --- 9.0 dB 35 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1