ASW216 5 ~ 4000 MHz MMIC Amplifier Features Description ·14 dB Gain at 900 MHz ·20 dBm P1dB at 900 MHz ·37.5 dBm OIP3 at 900 MHz ·2.2 dB NF at 900 MHz ·MTTF > 100 Years ·Single Supply The ASW216, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems ASW216 up to 4 GHz. The amplifier is available in a SOT89 package and passes through the stringent DC, RF, and reliability tests. Package Style: SOT89 Typical Performance Application Circuit (Supply Voltage = +4.5 V, TA = +25 C, Z0 = 50 ) Parameters Units Typical Frequency MHz 900 2000 Gain dB 14.0 11.8 S11 dB -14 -14 S22 dB -15 -14 Output IP31) dBm 37.5 38.0 Noise Figure dB 2.2 2.4 Output P1dB dBm 20 20 Current mA 80 80 Device Voltage V +4.5 +4.5 ·500 ~ 3500 MHz 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Product Specifications Parameters Units Testing Frequency MHz Min Typ. Max 900 Gain dB S11 dB 13 S22 dB Output IP3 dBm Noise Figure dB Output P1dB dBm 19 Current mA 70 Device Voltage V 14 -14 -15 36.0 37.5 2.2 2.6 20 80 110 Pin Configuration +4.5 Absolute Maximum Ratings Parameters Rating Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operating Junction Temperature Pin No. Function 1 RF IN +150 C 2 GND Input RF Power (CW, 50 matched)* 25 dBm 3 RF OUT & Bias Thermal Resistance 83 C/W Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/6 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2014 ASW216 5 ~ 4000 MHz MMIC Amplifier Outline Drawing Part No. Lot No. Symbols A L b b1 C D D1 E E1 e1 H S e ASW216 Pxxxx Dimensions (In mm) MIN NOM 1.40 1.50 0.89 1.04 0.36 0.42 0.41 0.47 0.38 0.40 4.40 4.50 1.40 1.60 3.64 --2.40 2.50 2.90 3.00 0.35 0.40 0.65 0.75 1.40 1.50 Pin No. Function 1 RF IN 2 GND 3 RF OUT & Bias MAX 1.60 1.20 0.48 0.53 0.43 4.60 1.75 4.25 2.60 3.10 0.45 0.85 1.60 Mounting Recommendation (In mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 550 V MM Class A Voltage Level: 50 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260 C reflow 2/6 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2014 ASW216 5 ~ 4000 MHz MMIC Amplifier APPLICATION CIRCUIT Wide Band 500 ~ 3500 MHz +4.5 V / +3 V Frequency (MHz) 900 2000 900 2000 Magnitude S21 (dB) 14.0 11.8 13.0 11.0 Magnitude S11 (dB) -14 -14 -12 -10 Magnitude S22 (dB) -15 -14 -15 -12 Output P1dB (dBm) 20 20 16 15 Output IP31) (dBm) 37.5 38.0 23.0 24.0 Noise Figure (dB) 2.2 2.4 2.2 2.4 Device Voltage (V) +4.5 +3 Current (mA) 80 35 1) OIP3 is measured with two tones at an output power of +5 dBm/tone(at 4.5V) / -5 dBm/tone(at 3V) separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vdevice=+4.5 V C4=1 F C3=100 pF L1=39 nH C2=100 pF C1=100 pF RF IN RF OUT ASW216 L2=39 nH S-parameters & K-factor 20 0 o -40 c o 25 c o 85 c -5 S11 (dB) Gain (dB) 15 10 -10 o 5 -40 c o 25 c o 85 c -15 0 -20 0 500 1000 1500 2000 2500 3000 3500 0 500 1000 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 o -40 c o 25 c o 85 c -20 2000 2500 3000 3500 3000 3500 3 2 1 -25 0 0 500 1000 1500 2000 2500 3000 3500 0 500 Frequency (MHz) 3/6 1500 Frequency (MHz) 1000 1500 2000 2500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 April 2014 ASW216 5 ~ 4000 MHz MMIC Amplifier Gain vs. Temperature Current vs. Temperature 18 110 16 100 Gain (dB) Current (mA) 14 90 80 12 10 Frequency = 2000 MHz 70 8 60 -60 -40 -20 0 20 40 60 80 6 -60 100 -40 -20 o 20 40 60 80 100 Temperature ( C) Output IP3 vs. Temperature P1dB vs. Temperature 26 48 24 44 Output IP3 (dBm) 22 P1dB (dBm) 0 o Temperature ( C) 20 18 Frequency = 2000 MHz -40 -20 0 20 40 60 80 36 Frequency = 2000 MHz 32 16 14 -60 40 100 28 -60 -40 o -20 0 20 40 60 80 100 o Temperature ( C) Temperature ( C) Output IP3 vs. Tone Power (Frequency = 2000 MHz) 50 45 Output IP3 (dBm) 40 35 30 o -40 c o 25 c o 85 c 25 20 15 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pout per Tone (dBm) 4/6 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2014 ASW216 5 ~ 4000 MHz MMIC Amplifier Performance with varying VDEVICE VDEVICE (V) Current (mA) +4.50 81 +4.20 +3.75 +3.20 Freq. (MHz) Gain (dB) S11 (dB) S22 (dB) OIP31) (dBm) P1dB (dBm) NF (dB) 900 14.1 -14.5 -18.0 37.9 20.6 2.05 2000 11.6 -13.9 -12.5 38.0 19.7 2.33 900 14.0 -14.3 -18.1 36.0 19.7 2.12 2000 11.6 -13.7 -12.1 36.0 18.8 2.35 900 13.8 -14.0 -18.1 31.9 17.8 2.17 2000 11.4 -13.4 -12.4 32.3 17.3 2.30 900 13.4 -13.3 -17.7 26.0 15.8 2.24 2000 11.1 -12.9 -12.3 27.5 15.1 2.23 66 49 35 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. 5/6 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2014 ASW216 5 ~ 4000 MHz MMIC Amplifier Recommended Soldering Reflow Profile 260 C Ramp-up (3 C/sec) 20~40 sec Ramp-down (6 C/sec) 200 C 150 C 60~180 sec 6/6 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2014