DMT6017LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED Product Summary Features and Benefits BVDSS RDS(ON) Max 60V 18mΩ @ VGS = 10V 23mΩ @ VGS = 4.5V ID Max TA = +25°C 9.2A 8A Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Load Switch Adaptor Switch Notebook PC Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.076 grams (Approximate) D SO-8 Pin1 S D S D S D G D G S Pin-Out Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMT6017LSS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 N3016LS T6017LS N3016LS YY WW YY WW 1 4 DMT6017LSS Document number: DS38852 Rev. 1 - 2 1 = Manufacturer’s Marking T6017LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 16 = 2016) WW = Week (01 to 53) 4 1 of 6 www.diodes.com May 2016 © Diodes Incorporated DMT6017LSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value 60 ±20 9.2 7.4 ID 11.9 9.5 A ID 8 6.5 A A 10 8.1 60 2 15.3 11.7 A A A mJ Value 1.5 85 45 2.1 74 37 13 -55 to +150 Unit W °C/W °C/W W °C/W °C/W °C/W °C ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Unit V V IDM IS IAS EAS A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State t<10s RJA Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Case Operating and Storage Temperature Range RJA RJC TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 48V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) VSD — — — 0.7 2.5 18 23 1.2 V Static Drain-Source On-Resistance 1 — — — VDS = VGS, ID = 250µA VGS = 10V, ID = 10A VGS = 4.5V, ID = 6A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 864 282 27 1.3 8.4 17 3.1 4.3 3.4 5.2 13 7 22 11 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 10A ns VGS = 10V, VDS = 30V, RG = 6Ω, ID = 10A ns nC IF = 10A, di/dt = 100A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMT6017LSS Document number: DS38852 Rev. 1 - 2 2 of 6 www.diodes.com May 2016 © Diodes Incorporated DMT6017LSS 30.0 30 27.0 27 24 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.0V VGS = 4.5V 24.0 )A ( T N E R R U C N IA R D ,D I 21.0 18.0 15.0 VGS = 3.5V 12.0 9.0 3.0 18 15 12 9 TA = 150°C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0 1.5 5 0.025 ) ( E C N A T S 0.02 IS E R -N O E C 0.015 R U O S -N IA 0.01 R D , )N VGS = 4.5V 0.02 0.015 TA = 25°C TA = -55°C 0.03 0.025 TA = 125°C TA = 85°C 3 VGS = 3.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 21 6 6.0 VGS = 10V 0.01 0.005 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics VGS = 10V 5 TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C O ( S D 0 R 0 3 6 9 12 15 18 21 24 27 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED VDS = 5.0V VGS = 10V VGS = 10V ID = 10A 1.6 1.4 VGS = 4.5V ID = 6A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMT6017LSS Document number: DS38852 Rev. 1 - 2 3 of 6 www.diodes.com 0.005 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.04 0.035 0.03 VGS = 4.5V ID = 6A 0.025 0.02 VGS = 10V ID = 10A 0.015 0.01 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature May 2016 © Diodes Incorporated DMT6017LSS 30 VGS(TH), GATE THRESHOLD VOLTAGE (V) 27 24 IS, SOURCE CURRENT (A) )A ( T N E R R U C E C R U O S ,S I ID = 1mA ID = 250µA 21 18 15 12 TA = 25°C TA = 125°C 6 ( S G 3 0.5 -50 10000 IDSS, DRAIN LEAKAGE CURRENT (nA) 0 0.3 0.6 0.9 1.2 1.5 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10000 TA = 150°C )A n ( T 1000 N E R R U C 100 E G A K A E 10 L N I A R D 1 ,S TA = -55°C 0 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Figure 7 Gate Threshold Variation vs. Temperature I TA = 85°C TA = 150°C 9 V C T, JUNCTION CAPACITANCE (pF) TA = 125°C TA = 85°C TA = 25°C S D C iss 1000 Coss 100 Crss 10 f = 1MHz 0.1 0 1 5 10 15 20 25 30 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage 10 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 100 RDS(on) Limited 8 ID, DRAIN CURRENT (A) V GS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED 3 )V ( E G A 2.5 T L O V D L 2 O H S E R H T 1.5 E T A G , h) 1 t 10 ) A ( T N E R R U 1 C N I A R D ,D I 0.1 VDS = 30V ID = 10A 6 4 2 0 0 2 4 6 8 10 12 14 16 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMT6017LSS Document number: DS38852 Rev. 1 - 2 18 4 of 6 www.diodes.com DC PW = 10s PW = 1s PW = 100ms PW= 10ms TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.01 PW = 1ms PW = 100µs 0.1 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 May 2016 © Diodes Incorporated DMT6017LSS 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 = r(t) * RJA RR = r(t)* RθJA θJA (t) JA(t) o RR = 85 C/W = 85癈 /W θJA JA Duty Cycle, D =Dt1/t2 Duty Cycle, = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X C1 C2 Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 Y DMT6017LSS Document number: DS38852 Rev. 1 - 2 5 of 6 www.diodes.com May 2016 © Diodes Incorporated DMT6017LSS IMPORTANT NOTICE NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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