CHENMKO ENTERPRISE CO.,LTD CH3906MPT SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-723 * Small surface mounting type. (SOT-723) * Low current (Max.=200mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. (3) (2) 0.17~0.27 0.4 1.15~1.25 0.4 0.75~0.85 0.27~0.37 (1) 0.17~0.27 0.75~0.85 CONSTRUCTION * PNP Switching Transistor MARKING * 37 0.45~0.55 0.11~0.14 3 CIRCUIT 1.15~1.25 1 2 SOT-723 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -40 V VCEO collector-emitter voltage open base − -40 V VEBO emitter-base voltage open collector − -5 V IC collector current DC − -200 mA ICM peak collector current − -200 mA IBM peak base current − -100 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-6 RATING CHARACTERISTIC CURVES ( CH3906MPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = - 30 V − -50 nA IEBO emitter cut-off current IC = 0; VEB = 6 V − -50 nA hFE DC current gain VCE = -1V; note 1 VCEsat VBEsat IC = -0.1mA 60 − IC = -1mA 80 − IC = -10 mA 100 300 IC = - 50 mA 60 − IC = -100 mA 30 − collector-emitter saturation voltage IC = -10 mA; IB = - 1 mA − -250 mV IC = -50 mA; IB = - 5 mA − -400 mV base-emitter saturation voltage IC = -10 mA; IB = -1mA -650 -850 mV IC = -50 mA; IB = - 5 mA − -950 mV Cc collector capacitance IE = ie = 0; VCB = - 5 V ; f = 1 MHz − 4.5 pF Ce emitter capacitance IC = ic = 0; VEB = -500 mV; f = 1 MHz − 10 pF fT transition frequency IC = 10 mA; VCE = - 2 0 V ; f = 100 MHz 250 − MHz F noise Þgure IC = 100 µA; VCE = - 5 V; RS = 1 k Ω ; − f = 10 Hz to 15.7 kHz 4 dB Switching times (between 10% and 90% levels); − 65 ns − 35 ns rise time − 35 ns toff turn-off time − 300 ns ts storage time − 225 ns tf fall time − 75 ns ton turn-on time td delay time tr Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. ICon = -10 mA; IBon = -1 mA; IBoff = 1 mA RATING CHARACTERISTIC CURVES ( CH3906MPT ) Permissible Pulse Load DC current gain hFE = f ( IC) VCE = 1 V, normalized Ptotmax/PtotDC = f ( tp) 10 3 10 1 Ptot max 5 Ptot DC D= tp T tp h FE T 10 2 125 C D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 25 C 10 0 -55 C 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 -1 -1 10 10 0 5 10 0 5 10 1 tp mA 10 2 IC Saturation voltage IC = f (VBEsat; VCEsat) Short-circuit forward current hFE = 10 transfer ratio h21e = f (IC) VCE = 10V, f = 1MHz 10 3 2 mA C 10 2 h 21e 5 5 V BE V CE 10 2 10 1 5 5 10 0 0 0.2 0.4 0.6 0.8 1.0 V 1.2 V BE sat , V CE sat 10 1 -1 10 5 10 0 mA IC 5 10 1 RATING CHARACTERISTIC CURVES ( CH3906MPT ) Open-circuit output admittance Delay time td = f (IC ) h22e = f (IC ) VCE = 10V, f = 1MHz Rise time tr = f (IC ) 10 2 s h 22e 10 3 ns 5 tr td t r ,t d 10 2 h FE = 10 VCC = 3 V 10 1 15 V 40 V 5 10 1 V BE = 2 V 0V 10 0 -1 10 5 10 0 mA 5 10 10 0 0 10 1 5 10 1 5 10 2 mA 5 10 3 ΙC ΙC Fall time tf = f (IC) Input impedance h11e = f (IC ) VCE = 10 V, f = 1kHz 10 2 10 3 25 C 125 C ns h 11e k tf VCC = 40 V 10 1 10 2 h FE = 20 10 1 h FE = 10 5 10 0 5 10 0 0 10 5 10 1 5 10 2 mA 5 10 3 ΙC 10 -1 -1 10 5 10 0 mA ΙC 10 1 RATING CHARACTERISTIC CURVES ( CH3906MPT ) Open-circuit reverse voltage transfer ratio h12e = f (IC) VCE = 10V, f = 1kHz 10 -3 h 12e 5 10 -4 5 10 -5 10 -1 5 10 0 mA ΙC 10 1 RATING CHARACTERISTIC CURVES ( CH3906MPT ) Test circuit Delay and rise time -3.0 V 275 <1.0 ns +0.5 V 10 k 0 <4.0 pF -10.6 V D = 2% 300 ns C Storage and fall time -3.0 V <1.0 ns 275 +9.1 V 10 k 0 t1 -10.9 V 10 < t 1< 500 s D = 2% C 1N916 <4.0 pF