ON BCP68T1G Npn silicon epitaxial transistor Datasheet

BCP68T1G
NPN Silicon
Epitaxial Transistor
This NPN Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT−223 package, which is designed for medium power surface
mount applications.
Features
• High Current
• The SOT−223 Package Can Be Soldered Using Wave or Reflow
• SOT−223 package ensures level mounting, resulting in improved
•
•
•
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MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
The PNP Complement is BCP69T1
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR 2,4
BASE
1
EMITTER 3
4
1
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
20
Vdc
Collector−Base Voltage
VCBO
25
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
IC
1.0
Adc
ICM
3.0
Adc
IB
0.4
Adc
Base Current − Peak
IBM
0.4
Adc
Total Power Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
PD
1.5
12
W
mW/°C
−65 to 150
°C
Rating
Collector Current
Collector Current − Peak (Note 2)
Base Current − Continuous
Operating and Storage Temperature
Range
TJ, Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
2. Reference SOA curve for IC peak.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
(Surface Mounted)
RqJA
83.3
°C/W
TL
260
°C
10
Sec
Lead Temperature for Soldering,
0.0625 in from case
Time in Solder Bath
© Semiconductor Components Industries, LLC, 2014
January, 2014 − Rev. 9
1
2
3
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
CA G
G
CA = Specific Device Code
A
= Assembly Location
Y
= Year
W = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
BCP68T1G
SOT−223
(Pb−Free)
1,000/Tape & Reel
SBCP68T1G*
SOT−223
(Pb−Free)
1,000/Tape & Reel
BCP68T3G
SOT−223
(Pb−Free)
4,000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BCP68T1/D
BCP68T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristics
Min
Typ
Max
25
−
−
20
−
−
5.0
−
−
−
−
10
−
−
10
50
85
60
−
−
−
−
375
−
−
−
0.5
−
−
1.0
−
60
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CES
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector−Base Cutoff Current
(VCB = 25 Vdc, IE = 0)
ICBO
Emitter−Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
fT
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc)
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
15
−
pF
Output Capacitance (VEB = 5 Vdc, IE = 0, f = 1.0 MHz)
Cibo
−
145
−
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
300
200
f,
T CURRENT‐GAIN‐BANDWIDTH PRODUCT (MHz)
hFE, DC CURRENT GAIN
TYPICAL ELECTRICAL CHARACTERISTICS
TJ = 125°C
= 25°C
100
= - 55°C
VCE = 1.0 V
10
1.0
10
100
IC, COLLECTOR CURRENT (mA)
1000
300
200
100
70
VCE = 10 V
TJ = 25°C
f = 30 MHz
50
30
10
Figure 1. DC Current Gain
100
200
IC, COLLECTOR CURRENT (mA)
Figure 2. Current-Gain-Bandwidth Product
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2
1000
BCP68T1G
TYPICAL ELECTRICAL CHARACTERISTICS
80
TJ = 25°C
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
70
Cib, CAPACITANCE (pF)
V, VOLTAGE (VOLTS)
1.0
0.4
0.2
0
50
40
VCE(sat) @ IC/IB = 10
1.0
60
30
10
100
1000
IC, COLLECTOR CURRENT (mA)
0
Figure 3. “On” Voltage
RθVB, TEMPERATURE COEFFICIENT (mV/°C)
Cob, CAPACITANCE (pF)
TJ = 25°C
20
15
10
0
2.0
3.0
4.0
VR, REVERSE VOLTAGE (V)
5.0
Figure 4. Capacitance
25
5.0
1.0
5.0
10
15
VR, REVERSE VOLTAGE (V)
20
-0.8
-1.2
-1.6
RqVB for VBE
-2.0
-2.4
-2.8
1.0
Figure 5. Capacitance
10
100
IC, COLLECTOR CURRENT (mA)
1000
Figure 6. Base−Emitter Temperature
Coefficient
10
1.0
IC, COLLECTOR CURRENT (A)
VCE , COLLECTOR VOLTAGE (V)
TJ = 25°C
0.8
0.6
0.4
= 1000 mA
I C = 10 mA
= 50 mA
= 100 mA
0.2
0
0.01
= 500 mA
0.1
1.0
10
IB, BASE CURRENT (mA)
100 ms
1
0.1
100
1 ms
1
Figure 7. Saturation Region
10 ms
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 8. Safe Operating Area
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3
100
BCP68T1G
310
300
290
280
270
260
250
240
230
220
210
200
190
180
170
160
150
140
130
50
TJ = 25°C
f = 1 MHz
TJ = 25°C
f = 1 MHz
45
Cob, CAPACITANCE (pF)
Cib, CAPACITANCE (pF)
TYPICAL ELECTRICAL CHARACTERISTICS
40
35
30
25
20
15
10
5
0
1
2
3
VR, REVERSE VOLTAGE (V)
4
0
5
0
Figure 9. Input Capacitance
5
10
15
20
VR, REVERSE VOLTAGE (V)
Figure 10. Output Capacitance
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4
25
BCP68T1G
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
3
b
e1
e
A1
C
q
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
q
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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