ABR3500 - ABR3510 AVALANCHE BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 35 Amperes BR50 0.728(18.50) 0.688(17.40) FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 0.685(16.70 1.130(28.70) 1.120(28.40) ) 0.570(14.50) 0.530(13.40) 0.210(5.30) 0.200(5.10) 0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71) MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams 0.252(6.40) 0.248(6.30) φ 0.100(2.50) 0.090(2.30) 0.905(23.0) 0.826(21.0) 0.310(7.87) 0.280(7.11) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL ABR 3500 50 ABR 3501 100 ABR 3502 200 ABR 3504 400 ABR 3506 600 ABR 3508 800 ABR 3510 1000 UNIT Maximum Recurrent Peak Reverse Voltage VRRM V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Minimum Avalanche Breakdown Voltage at 100 µA VBO(min.) 100 150 250 450 700 900 1100 V Maximum Avalanche Breakdown Voltage at 100 µA VBO(max.) 550 600 700 900 1150 1350 1550 V Maximum Average Forward Current Tc = 50°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing at ( t < 8.3 ms. ) Maximum Forward Voltage per Diode at IF = 17.5 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance Ta = 25 °C Ta = 100 °C (Note 1) Operating Junction Temperature Range Storage Temperature Range IF(AV) 35 A IFSM 400 A It VF 2 660 A2S 1.1 V IR 10 µA IR(H) 200 µA RθJC 1.5 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Note : 1 ) Thermal resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" ( 19 x 9 x 11.8 cm )Al. plate. Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( ABR3500 - ABR3510 ) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 400 50 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 40 30 20 10 0 0 25 50 75 100 125 150 240 160 8ms SINGLE HALF SINE WAVE JEDEC METHOD 80 0 175 TJ = 55 °C 320 1 CASE TEMPERATURE, ( °C) 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 °C REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES 100 10 Pulse Width = 300 µs 1 % Duty Cycle 1.0 1.0 TJ = 25 °C 0.1 TJ = 25 °C 0.01 0 0.1 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005