Transistors SMD Type PNP Transistors BC808 (KC808) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 High current gain. 1 0.55 High collector current. +0.1 1.3 -0.1 +0.1 2.4 -0.1 Features 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 Low collector-emitter saturation voltage. +0.05 0.1 -0.01 +0.1 0.97 -0.1 ● Complementary NPN type available(BC818) 1.Base 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base v oltage VCBO -30 V Collector-emitter v oltage VCEO -25 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -800 mA Power dissipation PD 300 mW Junction temperature Tj 150 Storage temperature Tstg -65 to +150 +0.1 0.38 -0.1 2.Emitter 3.collector Electrical Characteristics Ta = 25 Parameter Symbol Testconditiions Min Typ Max Unit Collector-to-baser breakdown voltage VCBO IC = -100u A,VBE = 0 -30 V Collector-to-emitter breakdown voltage VCEO IC = -10 mA, IB = 0 -25 V VEBO IE = -100u A, IC = 0 -5 V Emitter-to-base breakdown voltage Collector cutoff current ICBO VCB = -25 V, VBE= 0 -100 nA Emitter cutoff current IEBO VEB = -4 V, IC = 0 -100 nA DC current gain * hFE IC = -100 mA, VCE = -1 V 100 IC = -300 mA, VCE = -1 V 60 630 Collector saturation voltage * VCE(sat) IC = -500 mA, IB = -50 mA -0.7 V Base emitter on voltage VBE(on) VCE=-1V,IC=300mA -1.2 V Output Capacitance Cob VCB=-10V,f=1MHz Transition frequency fT * Pulsed: PW 350 us,duty cycle IC = -10 mA, VCE = -5 V, f = 50 MHz 12 100 pF MHz 2% Marking NO. BC808-16 BC808-25 Marking 5E 5F hFE 100 250 160 400 BC808-40 5G 250 630 www.kexin.com.cn 1 Transistors SMD Type BC808 ■ Typical Characterisitics 2 www.kexin.com.cn (KC808) Transistors SMD Type BC808 (KC808) ■ Typical Characterisitics www.kexin.com.cn 3 Transistors SMD Type BC808 ■ Typical Characterisitics 4 www.kexin.com.cn (KC808)