UMS CHA2266 Gaas monolithic microwave ic Datasheet

CHA2266
RoHS COMPLIANT
12.5-17GHz Low-Noise Driver Amplifier
GaAs Monolithic Microwave IC
Description
VD 1
The CHA2266 is a self biased, low-noise
high gain driver amplifier. It is designed
mainly for VSAT applications in Kuband. The backside of the chip is both RF
and DC grounded. This helps to simplify
the assembly process.
The circuit is manufactured on a standard
GaAs pHEMT process, with via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
VD 2
IN
OUT
( Vds = 4V, Ids = 130mA )
Main Features
40
35
30
Broadband performance 12.5–17GHz
2.5dB noise figure
34dB gain, +/- 0.5dB gain flatness
Low DC power consumption:130mA
Saturated output power : 16dBm
Chip size 2.32 x 1.02 x 0.1mm
25
G a in & R e turn lo ss / d B
20
15
MS11
MS21
MS22
NF
10
4,1
5
2,9
2,5
2,0
1,9
1,6
1,5
1,5
2,2
0
-5
-10
-15
-20
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Frequency / GHz
Main Characteristics
Tamb=+25°C
Symbol
Fop
Parameter
Min
Operating frequency range
Typ
12.5
G
Small signal gain
NF
Noise Figure
2.5
Output power at 1 dB gain
compression
14.5
P1dB
31
Max
Unit
17
GHz
34
dB
3
dB
dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22667082- 23 Mar 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12.5-17GHz Driver Amplifier
CHA2266
Electrical Characteristics on wafer
Tamb = +25°C, Vd = 4V
Symbol
Fop
Parameter
Min
Operating frequency range
G
Typ
12.5
Small signal gain
31
Max
Unit
17
GHz
34
dB
± 0.5
dB
∆G
Small signal gain flatness
NF
Noise Figure
2.5
3.0
dB
Input return loss
-10
-6
dB
RLout
Output return loss
-10
-6
dB
P1dB
Output power at 1 dB gain compression
P3dB
Saturated output power
RLin
Id small
signal
Rth
13.5
14.5
15
16
Drain bias current
130
Thermal resistance @ Tback side=25°C
dBm
170
mA
80°C
°C/ W
Absolute maximum Ratings (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.3
V
Pin
Maximum continuous input power overdrive
-15
dBm
Maximum peak input power overdrive(2)
+15
dBm
Maximum junction temperature
175
°C
Tj max
Top
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature
-55 to +125
°C
(1) Operation of this device above any of these parameters may cause permanent damage.
(2) Duration <1s
Ref. : DSCHA22667082- 23 Mar 07
2/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
12.5-17 GHz Driver Amplifier
CHA2266
Typical Results
Typical Chip Response (On wafer S-parameter*)
( Vds = 4V, Ids = 130mA )
40
35
30
Gain & Return loss / dB
25
20
15
MS11
MS21
MS22
NF
10
4,1
5
2,9
2,5
2,0
1,6
1,9
2,2
1,5
1,5
0
-5
-10
-15
-20
5
6
7
8
9
10
11
12
13
14 15 16 17
Frequency / GHz
18
19
20
21
22
23
24
25
*Return loss improves with bondings
Typical On Wafer Scattering Parameters
Tamb = +25°C, Bias Conditions: Vd = 4V
Freq/GHz
MS11
PS11
MS12
PS12
MS21
PS21
MS22
PS22
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
19.00
20.00
21.00
22.00
23.00
24.00
-0.19
-0.30
-0.46
-0.80
-1.44
-2.86
-6.63
-17.39
-18.06
-12.00
-9.86
-9.01
-8.27
-6.40
-5.55
-4.88
-4.83
-5.31
-5.85
-6.91
-60.43
-74.26
-89.33
-106.32
-125.75
-151.22
177.56
153.85
-84.40
-98.21
-113.78
-121.29
-129.83
-139.02
-156.24
-174.36
166.53
149.22
132.80
118.54
-80.46
-78.78
-75.88
-72.20
-73.72
-66.33
-70.35
-66.55
-65.32
-59.86
-76.73
-56.32
-57.21
-62.54
-65.06
-67.73
-55.41
-53.79
-52.72
-50.50
-28.08
-70.24
2.69
32.17
-51.84
-115.35
-76.43
-128.54
168.52
-136.83
168.29
80.85
-170.04
-89.64
53.72
-90.69
154.09
91.59
-168.14
80.81
-9.27
-0.12
6.56
12.83
19.02
25.20
30.42
33.53
34.77
35.15
35.05
34.64
34.05
33.15
31.28
28.65
25.68
22.47
19.33
16.33
55.33
-24.96
-88.05
-142.23
165.74
108.42
42.05
-28.39
-94.85
-154.68
149.44
97.72
46.71
-4.88
-55.40
-101.56
-143.31
-179.42
148.56
119.70
-2.21
-2.68
-3.27
-4.19
-5.51
-7.08
-8.70
-9.87
-11.53
-12.46
-13.41
-12.58
-11.91
-11.24
-10.37
-9.43
-8.53
-7.66
-7.00
-6.35
-70.44
-82.41
-95.03
-107.99
-118.06
-126.35
-131.49
-134.03
-135.84
-131.75
-127.10
-114.59
-113.66
-113.55
-116.41
-117.46
-120.11
-125.61
-131.61
-137.67
25.00
-7.45
103.68
-71.86
-7.37
13.42
93.05
-6.02
-145.44
Ref. : DSCHA22667082- 23 Mar 07
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
NF
4.06
2.88
2.46
2.01
1.92
1.60
1.55
1.46
2.24
Specifications subject to change without notice
12.5-17GHz Driver Amplifier
CHA2266
Typical Test-Jig Results
S- Parameters @ small signal
Tamb 25 °C, Vd = 4V
40
35
30
25
Gain, Return loss / dB
20
15
10
S11
5
S21
S22
0
-5
-10
-15
-20
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Frequency / GHz
S21 in the full temperature range
40
35
30
S21 (dB)
25
-50°C
20
25°C
+85°C
15
10
5
0
5
10
15
20
25
30
Frequency (GHz)
Ref. : DSCHA22667082- 23 Mar 07
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
30
12.5-17 GHz Driver Amplifier
CHA2266
NF vs Frequency and Temperature
NF in the full temperature range
6
5
NF (dB)
4
-50°C
3
+25°C
+85°C
2
1
0
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Gain & Pout vs Pin @ 14, 15 and 16GHz
Tamb = 25°C,Vd =4 V
Gain / Pout @ 14GHz
40
18
38
16
14
Gain
Pout
Com pression
Gain (dB)
34
12
32
10
30
8
28
6
26
4
24
2
22
0
-25
-23
-21
-19
-17
-15
-13
-11
-9
-7
PIN (dBm)
Ref. : DSCHA22667082- 23 Mar 07
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
Pout (dBm), compression (dB)
36
12.5-17GHz Driver Amplifier
CHA2266
Gain / Pout @ 15GHz
40
18
38
16
14
Gain
Pout
Gain / dB
34
12
Compression
32
10
30
8
28
6
26
4
24
2
22
Pout (dBm),compression (dB)
36
0
-25
-23
-21
-19
-17
-15
-13
-11
-9
-7
Pin / dBm
Gain / Pout @ 16GHz
40
18
38
16
36
14
Pout
Compression
Gain / dB
34
12
32
10
30
8
28
6
26
4
24
2
22
0
-25
-23
-21
-19
-17
-15
-13
-11
-9
-7
Pin / dBm
Ref. : DSCHA22667082- 23 Mar 07
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
Pout (dBm), compression (dB)
Gain
12.5-17 GHz Driver Amplifier
CHA2266
Psat #3dB
17
16
Output power (dBm)
15
14
13
12
11
12GHz
10
14GHz
16GHz
18GHz
9
8
7
-50
-25
0
25
50
75
50
75
Temperature (°C)
Pout @ 1dB compression
17
16
Output power (dBm)
15
14
13
12
11
10
12GHz
9
14GHz
16GHz
18GHz
8
7
-50
-25
0
25
Temperature (°C)
Ref. : DSCHA22667082- 23 Mar 07
7/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
12.5-17GHz Driver Amplifier
CHA2266
Chip Assembly and Mechanical Data
Drain supply feed
100 pF
VD 1
VD 2
IN
OUT
Notes: Vd1 & Vd2 pads are internally connected
Supply feed should be bypassed. 25µm diameter gold wire is recommended
Bond pad positions and Pin references
(Chip thickness: 100 µm. all dimensions are in micrometers)
Dimensions : 2320 x 1020µm ± 35µm
Ordering Information
Chip Form :
CHA2266-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA22667082- 23 Mar 07
8/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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