AG503-89 InGaP HBT Gain Block Product Features • • • • • • DC – 4000 MHz +15.5 dBm P1dB at 900 MHz +29 dBm OIP3 at 900 MHz 21.5 dB Gain at 900 MHz Single Voltage Supply Lead-free / RoHS-compliant / Green SOT-89package • Internally matched to 50 Ω Product Description Functional Diagram The AG503-89 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG503-89 typically provides 21.5 dB of gain, +29 dBm OIP3, and +15.5 dBm P1dB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding 1000 years at mounting temperatures of +85 °C and is housed in a lead-free/green/RoHS-compliant SOT-89 industry-standard SMT package. GND Applications The AG503-89 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. • • • • • The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG503-89 will work for other various applications within the DC to 4 GHz frequency range such as CATV and WiMAX. Mobile Infrastructure CATV / FTTX W-LAN / ISM RFID WiMAX / WiBro Specifications (1) Parameter 4 1 2 3 RF IN GND RF OUT Function Input Output/Bias Ground Pin No. 1 3 2, 4 Typical Performance (1) Units Min MHz MHz dB dB dB dBm dBm dBm dB MHz dB dBm dBm V mA DC Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Output IP2 Noise Figure Test Frequency Gain Output P1dB Output IP3 (2) Device Voltage Device Current 18.1 Typ 900 21.3 15 17 +15.6 +29 +37 3.1 1900 19.1 +14.4 +27.4 5.0 45 Max Parameter Units 4000 Frequency S21 S11 S22 Output P1dB Output IP3 (2) Noise Figure MHz dB dB dB dBm dBm dB Typical 500 22.0 -18 -24 +15.6 +29.4 3.0 900 21.3 -15 -17 +15.6 +29.0 3.1 1900 19.1 -15 -10.6 +14.4 +27.4 3.3 2140 18.7 -17 -10.4 +14.2 +27.2 3.3 20.1 1. Test conditions: 25 ºC, Supply Voltage = +6 V, Rbias = 22.1 Ω, 50 Ω System. 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Storage Temperature DC Voltage RF Input Power (continuous) Junction Temperature Thermal Resistance, Rth Rating -55 to +150 °C +5.8 V +10 dBm +177 °C 232 °C / W Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. AG503-89G AG503-89PCB Description InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-89 Package) 700 – 2400 MHz Fully Assembled Eval. Board Standard T/R size = 3000 pieces on a 13” reel. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com, www.TriQuint.com Page 1 of 5 January 2008 AG503-89 InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +6 V, Rbias = 22.1 Ω, Icc = 45 mA Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB dB dBm dBm dB 100 22.3 -26 -18 +15.9 +29.4 3.0 500 22.0 -18 -24 +15.6 +29.4 3.0 900 21.3 -15 -17 +15.6 +29.0 3.1 1900 19.1 -15 -10.6 +14.4 +27.4 3.3 2140 18.7 -17 -10.4 +14.2 +27.2 3.3 2400 18.2 -22 -10.7 +14.0 +26.8 3.4 3500 16.6 -27 -16 +11.3 5800 12.8 -16 -8.2 1. Test conditions: T = 25 ºC, Supply Voltage = +6 V, Device Voltage = 6.0 V, Rbias = 22.1 Ω, Icc = 45 mA typical, 50 Ω System. 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency Return Loss 18 16 14 -40 C +25 C 1 -10 -20 -30 S11 +85 C 2 Frequency (GHz) 3 0 4 1 2 3 4 5 40 25 20 2 2.5 35 -40 C 3 0 +25 C 200 1 +85 C -40 C 10 +25 C 600 800 1 1.5 2 2.5 Frequency (GHz) 3 3.5 4 +85 C 0.5 1 20 18 16 16 16 12 14 8 Output Power 4 0 -12 -8 -4 0 Input Power (dBm) 1.5 2 2.5 3 Output Power / Gain vs. Input Power 10 0.5 +25 C Frequency (GHz) Gain 12 +85 C 0 0 0 1000 frequency = 900 MHz 5 -40 C 400 4 8 Gain (dB) Gain (dB) 18 5.4 2 Output Power / Gain vs. Input Power P1dB vs. Frequency 15 5.0 3 Frequency (MHz) 20 4.6 0 Frequency (GHz) 20 4.2 4 Output Power (dBm) 1.5 3.8 Noise Figure vs. Frequency 25 1 3.4 5 +85 C 15 0.5 20 Device Voltage (V) 30 0 40 0 3.0 6 NF (dB) 30 OIP2 (dBm) 45 +25 C Optimal operating point Output IP2 vs. Frequency 35 -40 C 60 Frequency (GHz) Output IP3 vs. Frequency OIP3 (dBm) S22 -40 12 0 80 Device Current (mA) S11, S22 (dB) Gain (dB) 20 P1dB (dBm) I-V Curve 0 frequency = 2000 MHz 20 16 Gain 14 12 12 8 10 4 Output Power 8 Output Power (dBm) 22 0 -12 -8 -4 0 Input Power (dBm) 4 8 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com, www.TriQuint.com Page 2 of 5 January 2008 AG503-89 InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +8 V, Rbias = 44 Ω, Icc = 45 mA Gain vs. Frequency Output IP3 vs. Frequency OIP3 (dBm) Gain (dB) 20 18 16 Output IP2 vs. Frequency 35 45 30 40 OIP2 (dBm) 22 25 20 14 -40 C +25 C 1 2 Frequency (GHz) +25 C 85 C 3 0 4 +85 C -40 C 25 0.5 1 1.5 2 2.5 3 0 200 Frequency (GHz) 400 600 800 1000 Frequency (MHz) P1dB vs. Frequency Noise Figure vs. Frequency 5 20 4 15 NF (dB) P1dB (dBm) +25 C 15 12 0 30 -40 C +85 C 35 10 5 -40 C +25 C 3 2 1 +85 C -40 C 0 +25 C +85 C 0 0 0.5 1 1.5 2 2.5 Frequency (GHz) 3 3.5 4 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com, www.TriQuint.com Page 3 of 5 January 2008 AG503-89 InGaP HBT Gain Block Application Circuit Vcc Icc = 45 mA R1 Bias Resistor C4 Bypass Capacitor C3 0.018 µF L1 RF Choke RF IN RF OUT AG503-89 C2 Blocking Capacitor C1 Blocking Capacitor Recommended Component Values Reference Designator 50 500 L1 820 nH 220 nH C1, C2, C4 .018 µF 1000 pF Frequency (MHz) 900 1900 2200 68 nH 27 nH 22 nH 100 pF 68 pF 68 pF 2500 18 nH 56 pF 3500 15 nH 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. L1 C1, C2 C3 C4 R1 Value / Type 39 nH wirewound inductor 56 pF chip capacitor 0.018 μF chip capacitor Do Not Place 22.1 Ω 1% tolerance Size 0603 0603 0603 Recommended Bias Resistor Values S upply R1 value S ize Voltage 6V 22.2 ohms 0603 7V 44.4 ohms 0805 8V 67 ohms 1206 9V 89 ohms 1210 10 V 111 ohms 1210 12 V 156 ohms 2010 The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +6 V. A 1% tolerance resistor is recommended. 0805 Typical Device Data S-Parameters (Vdevice = +5.0 V, ICC = 45 mA, T = 25 °C, calibrated to device leads) Freq (MHz) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 4250 4500 4750 5000 5250 5500 5750 6000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -26.19 -23.35 -17.91 -15.52 -14.09 -12.90 -12.87 -13.81 -15.74 -18.98 -23.23 -32.94 -28.58 -25.07 -27.36 -37.65 -25.73 -18.68 -15.09 -13.28 -12.57 -12.84 -13.69 -15.63 -17.91 -179.61 160.54 150.08 141.97 134.98 131.90 129.91 128.31 126.11 107.41 104.12 143.49 -115.87 -108.27 -114.74 -166.05 89.46 73.79 67.26 62.51 57.49 52.85 47.99 44.02 36.55 21.55 21.45 21.24 20.88 20.37 19.84 19.26 18.68 18.13 17.67 17.32 16.89 16.52 16.16 15.80 15.41 14.94 14.43 13.80 13.22 12.77 12.35 12.10 11.98 11.87 177.16 166.20 152.40 139.13 126.75 114.96 104.78 94.73 85.30 76.68 70.25 60.61 51.58 42.71 33.60 24.19 14.88 6.00 -2.56 -11.15 -18.52 -25.59 -32.66 -39.82 -47.46 -24.24 -24.75 -24.74 -24.57 -24.92 -24.28 -24.39 -24.24 -23.81 -23.91 -23.81 -22.99 -22.79 -22.54 -22.21 -21.58 -21.74 -21.16 -21.17 -21.12 -21.10 -20.88 -20.37 -20.16 -19.50 0.28 1.32 -1.75 -4.88 -9.48 -9.59 -7.54 -9.74 -11.07 -12.44 -16.75 -18.94 -19.91 -23.20 -26.19 -31.30 -35.64 -41.49 -46.41 -49.57 -53.33 -58.61 -62.10 -65.61 -70.88 -18.02 -19.32 -24.54 -20.39 -15.97 -13.31 -11.54 -10.79 -10.51 -10.52 -10.71 -11.55 -12.66 -14.43 -16.07 -15.90 -13.59 -10.76 -8.74 -7.63 -6.98 -6.96 -7.30 -8.21 -9.28 -7.09 -22.62 -82.96 -137.56 -161.71 -172.90 -177.90 -179.42 -178.17 -164.14 -165.63 -165.21 -169.42 -177.62 160.53 126.84 99.68 83.55 74.76 70.27 68.95 66.81 67.16 66.03 63.60 Device S-parameters are available for download off of the website at: http://www.wj.com Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com, www.TriQuint.com Page 4 of 5 January 2008 AG503-89 InGaP HBT Gain Block AG503-89G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The AG503-89G will be marked with an “A503G” designator with an alphanumeric lot code marked below the part designator. The obsolete tin-lead package is marked with an “AG503” designator followed by an alphanumeric lot code. A503G Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard: Class 1C Passes ≥ 1000V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes ≥ 1000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com, www.TriQuint.com Page 5 of 5 January 2008