Diodes DMG10N60SCT N-channel enhancement mode mosfet Datasheet

DMG10N60SCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
BVDSS
RDS(ON)
Package
ID
TC = +25°C
600V
0.75Ω@VGS = 10V
TO220AB
(Type TH)
12A





Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Mechanical Data


Applications







Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Case: TO220AB (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
TO220AB (Type TH)
ESD PROTECTED
Top View
Equivalent Circuit
Bottom View
Top View
Pin Out Configuration
Ordering Information (Note 4)
Part Number
DMG10N60SCT
Notes:
Case
TO220AB (Type TH)
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
10N60SCT
= Manufacturer’s Marking
10N60SCT = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 16 = 2016)
WW or WW = Week Code (01 to 53)
YYWW
DMG10N60SCT
Document number: DS38891 Rev. 3 - 2
1 of 7
www.diodes.com
December 2016
© Diodes Incorporated
DMG10N60SCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Continuous Drain Current (Note 5) VGS = 10V
TC = +25°C
TC = +100°C
ID
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current, L = 60mH (Note 6)
Avalanche Energy, L = 60mH (Note 6)
IS
IDM
IAS
EAS
Value
600
±30
12
7.9
15
15
4.3
550
Units
V
V
Value
178
71
49
0.7
Units
-55 to +150
°C
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Symbol
TC = +25°C
TC = +100°C
Total Power Dissipation (Note 5)
PD
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
RJA
RJC
TJ, TSTG
W
°C/W
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
600






1
10
V
µA
µA
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = ±24V, VDS = 0V
VGS(TH)
RDS(ON)
VSD
2


4
0.75
1
V
Ω
V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd













pF
VDS = 25V, f = 1.0MHz,
VGS = 0
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 480V, ID = 10A,
VGS = 10V
ns
VDS = 300V, RG = 25Ω, ID = 10A,
VGS = 10V
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
3.2
0.6

1587
149
10
1.5
35
6
13
25
45
97
48
319
3.5













ns
C
Test Condition
VDS = 100V, IF = 10A ,dI/dt =
100A/μs
5. Device mounted on an infinite heatsink.
6. Guaranteed by design. Not subject to production testing.
7. Short duration pulse test used to minimize self-heating effect.
DMG10N60SCT
Document number: DS38891 Rev. 3 - 2
2 of 7
www.diodes.com
December 2016
© Diodes Incorporated
DMG10N60SCT
10.0
5
VGS = 6V
VDS = 10V
VGS = 8V
8.0
4
VGS = 5V
VGS = 10V
7.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
9.0
6.0
5.0
4.0
VGS = 4.5V
3.0
2.0
VGS = 4.2V
3
2
VGS = 4V
25oC
125oC
1.0
0
2
4
6
8
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
()
0.9
0.8
0.7
0.6
0
10
1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
()
-55oC
0
0.0
VGS = 10V
0.5
0.4
0.3
0.2
1
2
3
4
5
6
7
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
8
6
5
4
3
2
ID = 5A
1
0
0
2
3
4
5
6
7
8
9 10
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
1
0
5
10
15
20
25
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
30
3
2
VGS = 10V
1.8
150oC
1.6
1.4
125oC
1.2
1
85oC
0.8
0.6
25oC
0.4
0.2
-55oC
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
85oC
150oC
1
2.5
2
1.5
1
VGS = 10V, ID = 5A
0.5
0
0
0
1
2
3
4
5
6
7
8
9 10
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
DMG10N60SCT
Document number: DS38891 Rev. 3 - 2
-50
3 of 7
www.diodes.com
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
December 2016
© Diodes Incorporated
2
5
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
()
DMG10N60SCT
1.8
1.6
1.4
1.2
1
0.8
0.6
VGS = 10V, ID = 5A
0.4
0.2
0
4
ID = 1mA
3
ID = 250µA
2
1
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
-50
10
10000
f = 1MHz
CT, JUNCTION CAPACITANCE (pF)
VGS = 0V
9
IS, SOURCE CURRENT (A)
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
8
7
6
TJ = 150oC
5
TJ = 125oC
4
TJ = 85oC
3
TJ = 25oC
2
TJ = -55oC
1
Ciss
1000
Coss
100
10
Crss
0
1
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
30
100
10
RDS(ON)
Limited
ID, DRAIN CURRENT (A)
8
VGS (V)
6
VDS = 480V, ID = 10A
4
PW = 1µs
10
PW = 1s
1
PW = 100ms
PW = 10ms
PW = 1ms
TJ(Max) = 150℃
PW = 100µs
TC = 25℃
Single Pulse
DUT on Infinite Heatsink
VGS = 10V
0.1
2
0
PW = 10µs
0.01
0
5
10
15
20
25
Qg (nC)
Figure 11. Gate Charge
DMG10N60SCT
Document number: DS38891 Rev. 3 - 2
30
35
1
4 of 7
www.diodes.com
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
1000
December 2016
© Diodes Incorporated
DMG10N60SCT
1
D=0.9
D=0.5
r(t), TRANSIENT THERMAL RESISTANCE
D=0.7
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJC (t) = r(t) * RθJC
RθJC = 0.73℃/W
Duty Cycle, D = t1/t2
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMG10N60SCT
Document number: DS38891 Rev. 3 - 2
5 of 7
www.diodes.com
December 2016
© Diodes Incorporated
DMG10N60SCT
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO220AB (Type TH)
Eb
A
Ø P
A1
Q
H1
01
E
E2b
E2a
D
D2a D2
D1
A2
E2
01
02
L1
b2
b
L
C1
e
02(2x)
e1
C
Ea
DMG10N60SCT
Document number: DS38891 Rev. 3 - 2
6 of 7
www.diodes.com
TO220AB (Type TH)
Dim
Min
Max
Typ
A
4.27
4.87
4.57
A1
1.12
1.42
1.27
A2
2.39
2.99
2.69
b
0.70
1.01
0.81
b2
1.17
1.50
1.27
c
0.30
0.53
0.38
c1
0.38
0.72
0.56
D
14.60 15.40 15.00
D1
8.40
9.00
8.70
D2
5.33
6.63
6.33
D2a
4.54
5.84
5.54
e
2.54 BSC
e1
5.08 BSC
E
9.88
10.50 10.16
Ea
9.90
10.45 10.10
Eb
9.90
10.65 10.25
E2
7.06
8.36
8.06
E2a
6.67
7.97
7.67
E2b
4.94
6.24
5.94
H1
5.70
6.65
6.30
L
13.00 13.80 13.40
L1
4.10
3.75
Q
2.50
2.99
2.74
ØP
3.70
3.99
3.84
θ1
4°
10°
7°
θ2
0°
6°
3°
All Dimensions in mm
December 2016
© Diodes Incorporated
DMG10N60SCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
DMG10N60SCT
Document number: DS38891 Rev. 3 - 2
7 of 7
www.diodes.com
December 2016
© Diodes Incorporated
Similar pages