DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP51-05W General purpose PIN diode Product specification 2001 Jan 23 Philips Semiconductors Product specification General purpose PIN diode BAP51-05W FEATURES PINNING • Two elements in common cathode configuration in a small SMD plastic package PIN • Low diode capacitance • Low diode forward resistance. DESCRIPTION 1 anode (a1) 2 anode (a2) 3 common cathode APPLICATIONS • General RF applications. handbook, halfpage DESCRIPTION 3 3 Two planar PIN diodes in common cathode configuration in a SOT323 small SMD plastic package. 1 1 2 2 Top view MAM382 Marking code: 1W- Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 50 V IF continuous forward current − 50 mA Ptot total power dissipation − 240 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C 2001 Jan 23 Ts = 90 °C 2 Philips Semiconductors Product specification General purpose PIN diode BAP51-05W ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VF forward voltage IF = 50 mA − 0.95 1.1 V VR reverse voltage IR = 10 µA 50 − − V IR reverse current VR = 50 V − − 100 nA Cd diode capacitance VR = 0; f = 1 MHz − 0.4 − pF VR = 1 V; f = 1 MHz − 0.3 0.55 pF rD diode forward resistance VR = 5 V; f = 1 MHz − 0.2 0.35 pF IF = 0.5 mA; f = 100 MHz; note 1 − 5.5 9 Ω IF = 1 mA; f = 100 MHz; note 1 − 3.6 6.5 Ω IF = 10 mA; f = 100 MHz; note 1 − 1.5 2.5 Ω τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA − 550 − ns LS series inductance IF = 10 mA; f = 100 MHz − 1.6 − nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s 2001 Jan 23 PARAMETER thermal resistance from junction to soldering point 3 VALUE UNIT 250 K/W Philips Semiconductors Product specification General purpose PIN diode BAP51-05W GRAPHICAL DATA MLD507 102 handbook, halfpage MLD508 500 Cd handbook, halfpage rD (Ω) (fF) 400 10 300 200 1 100 10−1 10−1 10 1 IF (mA) 0 102 4 0 f = 100 MHz; Tj = 25 °C. Fig.2 Fig.3 Forward resistance as a function of forward current; typical values. MGS659 20 Diode capacitance as a function of reverse voltage; typical values. MLD509 handbook, halfpage s 2 21 (dB) −10 21 (dB) −0.5 (1) (2) (3) −1 −20 −1.5 −30 −2 −40 1 1.5 2 2.5 −50 0.5 3 f (GHz) (1) IF = 10 mA. (2) IF = 1 mA (3) IF = 0.5 mA Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C. 1 1.5 2 2.5 f (GHz) 3 Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb = 25 °C. Insertion loss (|s21|2) of the diode as a function of frequency; typical values. 2001 Jan 23 16 0 0 handbook, halfpage |S | 2 Fig.4 12 VR (V) f = 100 MHz; Tj = 25 °C. −2.5 0.5 8 Fig.5 4 Isolation (|s21|2) of the diode as a function of frequency; typical values. Philips Semiconductors Product specification General purpose PIN diode BAP51-05W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2001 Jan 23 REFERENCES IEC JEDEC EIAJ SC-70 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification General purpose PIN diode BAP51-05W DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. 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