NXP BLF871 Uhf power ldmos transistor Datasheet

BLF871
UHF power LDMOS transistor
Rev. 02 — 5 March 2009
Preliminary data sheet
1. Product profile
1.1 General description
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
Table 1.
Typical performance
RF performance at VDS = 40 V in a common-source 860 MHz test circuit.
Mode of operation
f
PL
PL(PEP)
(MHz)
(W) (W)
ηD
PL(AV)
Gp
IMD3
PAR
(W)
(dB) (%) (dBc)
(dB)
CW, class AB
860
100 -
-
21
60
-
-
2-tone, class AB
f1 = 860; f2 = 860.1
-
100
-
21
47
−35
-
DVB-T (8k OFDM)
858
-
-
24
22
33
−34[1]
8.3[2]
[1]
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2]
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent
drain current IDq = 0.5 A:
u Peak envelope power load power = 100 W
u Power gain = 21 dB
u Drain efficiency = 47 %
u Third order intermodulation distortion = −35 dBc
n DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent
drain current IDq = 0.5 A:
u Average output power = 24 W
u Power gain = 22 dB
u Drain efficiency = 33 %
u Third order intermodulation distortion = −34 dBc (4.3 MHz from center frequency)
BLF871
NXP Semiconductors
UHF power LDMOS transistor
n
n
n
n
n
n
n
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
n Communication transmitter applications in the UHF band
n Industrial applications in the UHF band
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
source
Simplified outline
Graphic symbol
1
1
[1]
3
2
3
2
[1]
sym112
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number Package
Name Description
BLF871
-
Version
flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Min
Max
Unit
drain-source voltage
-
89
V
VGS
gate-source voltage
−0.5
+13
V
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
200
°C
BLF871_2
Preliminary data sheet
Conditions
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 5 March 2009
2 of 18
BLF871
NXP Semiconductors
UHF power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
Rth(j-c)
[1]
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to case
Tcase = 80 °C;
PL(AV) = 50 W
[1]
Typ
Unit
0.95
K/W
Rth(j-c) is measured under RF conditions.
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.12 mA
[1]
89
-
Unit
105.5 V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 112 mA
1.4
-
2.4
V
IDSS
drain leakage current
VGS = 0 V; VDS = 40 V
-
-
1.4
µA
IDSX
drain cut-off current
VGS = VGSth + 3.75 V;
VDS = 10 V
16.7 20
-
A
IGSS
gate leakage current
VGS = 10 V; VDS = 0 V
-
-
140
nA
RDS(on)
drain-source on-state resistance VGS = VGSth + 3.75 V;
ID = 3.7 A
-
210 -
mΩ
Ciss
input capacitance
VGS = 0 V; VDS = 40 V;
f = 1 MHz
-
95
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 40 V;
f = 1 MHz
-
30
-
pF
Crss
reverse transfer capacitance
VGS = 0 V; VDS = 40 V;
f = 1 MHz
-
1
-
pF
[1]
[1]
ID is the drain current.
BLF871_2
Preliminary data sheet
Min Typ Max
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 5 March 2009
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BLF871
NXP Semiconductors
UHF power LDMOS transistor
001aaj276
160
Coss
(pF)
120
80
40
0
0
20
40
60
VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values
7. Application information
Table 7.
RF performance in a common-source narrowband 860 MHz test circuit
Th = 25 °C unless otherwise specified.
Mode of operation
f
VDS IDq
(MHz)
(V)
2-tone, class AB
f1 = 860;
f2 = 860.1
DVB-T (8k OFDM)
858
PL(PEP)
Gp
(A) (W)
(W)
(dB) (%)
40
0.5 100
-
> 19 > 44 < −30
-
40
0.5 -
24
> 19 > 30 < −31 [1]
> 7.8 [2]
IMD3
PAR
(dBc)
(dB)
[1]
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2]
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
BLF871_2
Preliminary data sheet
ηD
PL(AV)
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Rev. 02 — 5 March 2009
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BLF871
NXP Semiconductors
UHF power LDMOS transistor
7.1 Narrowband RF figures
7.1.1 CW
001aaj277
24
80
ηD
(%)
Gp
(dB)
Gp
22
60
ηD
20
40
18
20
16
0
60
0
180
120
PL (W)
VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit.
Fig 2.
CW power gain and drain efficiency as a function of load power; typical values
7.1.2 2-Tone
001aaj278
25
ηD
(%)
Gp
(dB)
23
001aaj279
0
80
IMD3
(dBc)
60
−20
Gp
ηD
21
40
−40
19
(1)
(2)
20
17
0
40
0
120
80
−60
0
40
PL(AV) (W)
80
120
PL(AV) (W)
VDS = 40 V; IDq = 0.5 A; measured in a common source
narrowband 860 MHz test circuit.
VDS = 40 V; IDq = 0.5 A; measured in a common source
narrowband 860 MHz test circuit.
(1) Low frequency component
(2) High frequency component
Fig 3.
2-Tone power gain and drain efficiency as
functions of average load power; typical
values
Fig 4.
2-Tone third order intermodulation distortion
as a function of average load power; typical
values
BLF871_2
Preliminary data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 5 March 2009
5 of 18
BLF871
NXP Semiconductors
UHF power LDMOS transistor
7.1.3 DVB-T
001aaj280
24
60
ηD
(%)
Gp
(dB)
001aaj281
−15
IMD3
(dBc)
−25
Gp
22
40
−35
ηD
20
20
−45
(1)
(2)
0
18
0
20
40
−55
60
0
20
PL(AV) (W)
40
60
PL(AV) (W)
VDS = 40 V; IDq = 0.5 A; measured in a common source
narrowband 860 MHz test circuit.
VDS = 40 V; IDq = 0.5 A; measured in a common source
narrowband 860 MHz test circuit.
(1) Low frequency component
(2) High frequency component
Fig 5.
DVB-T power gain and drain efficiency as
functions of average load power; typical
values
Fig 6.
DVB-T third order intermodulation distortion
as a function of average load power; typical
values
BLF871_2
Preliminary data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 5 March 2009
6 of 18
BLF871
NXP Semiconductors
UHF power LDMOS transistor
7.2 Broadband RF figures
7.2.1 2-Tone
001aaj282
22
Gp
(dB)
(2)
(1)
20
70
ηD
(dB)
001aaj283
0
IMD3
(dBc)
60
Gp
−20
(2)
(1)
18
50
(2)
(1)
ηD
−40
16
40
14
400
500
600
700
30
800
900
f (MHz)
−60
400
IDq = 0.5 A; measured in a common source broadband
test circuit as described in Section 8.
500
600
(1) VDS = 40 V; PL(AV) = 45 W
(2) VDS = 42 V; PL(AV) = 50 W
(2) VDS = 42 V; PL(AV) = 50 W
2-Tone power gain and drain efficiency as a
function of frequency; typical values
Fig 8.
2-Tone third order intermodulation distortion
as a function of frequency; typical values
BLF871_2
Preliminary data sheet
800
900
f (MHz)
IDq = 0.5 A; measured in a common source broadband
test circuit as described in Section 8.
(1) VDS = 40 V; PL(AV) = 45 W
Fig 7.
700
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 5 March 2009
7 of 18
BLF871
NXP Semiconductors
UHF power LDMOS transistor
7.2.2 DVB-T
001aaj284
22
Gp
(dB)
Gp
001aaj285
0
ηD
(%)
(2)
(1)
20
50
IMD3
(dBc)
−20
40
(2)
(1)
(1)
(2)
ηD
18
16
400
500
−40
30
600
−60
400
20
800
900
f (MHz)
700
IDq = 0.5 A; measured in a common source broadband
test circuit as described in Section 8.
500
600
(1) VDS = 40 V; PL(AV) = 22 W
(1) VDS = 40 V; PL(AV) = 22 W
(2) VDS = 42 V; PL(AV) = 24 W
DVB-T power gain and drain efficiency as
functions of frequency; typical values
800
900
f (MHz)
IDq = 0.5 A; measured in a common source broadband
test circuit as described in Section 8.
(2) VDS = 42 V; PL(AV) = 24 W
Fig 9.
700
Fig 10. DVB-T third order intermodulation distortion
as a function of frequency; typical values
001aaj286
9
PAR
(dB)
(1)
(2)
8
(3)
(4)
7
6
5
400
500
600
700
800
900
f (MHz)
IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8.
PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
(1) PAR at 0.01 % probability on the CCDF; VDS = 40 V; PL(AV) = 22 W
(2) PAR at 0.01 % probability on the CCDF; VDS = 42 V; PL(AV) = 24 W
(3) PAR at 0.1 % probability on the CCDF; VDS = 40 V; PL(AV) = 22 W
(4) PAR at 0.1 % probability on the CCDF; VDS = 42 V; PL(AV) = 24 W
Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values
BLF871_2
Preliminary data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 5 March 2009
8 of 18
BLF871
NXP Semiconductors
UHF power LDMOS transistor
7.3 Ruggedness in class-AB operation
The BLF871 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: VDS = 42 V; f = 860 MHz at rated
power.
7.4 Impedance information
ZL
drain
Zi
gate
001aai086
Fig 12. Definition of transistor impedance
Table 8.
Typical impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 42 V.
f
Zi
ZL
MHz
Ω
Ω
300
0.977 − j3.327
5.506 + j1.774
325
0.977 − j2.983
5.366 + j1.858
350
0.978 − j2.681
5.223 + j1.930
375
0.979 − j2.414
5.078 + j1.990
400
0.979 − j2.174
4.932 + j2.040
425
0.980 − j1.956
4.786 + j2.079
450
0.981 − j1.758
4.640 + j2.108
475
0.982 − j1.576
4.495 + j2.128
500
0.982 − j1.407
4.352 + j2.138
525
0.983 − j1.250
4.212 + j2.140
550
0.984 − j1.103
4.074 + j2.135
575
0.985 − j0.964
3.940 + j2.122
600
0.986 − j0.834
3.809 + j2.102
625
0.987 − j0.709
3.682 + j2.077
650
0.988 − j0.591
3.558 + j2.045
675
0.990 − j0.478
3.438 + j2.009
700
0.991 − j0.370
3.323 + j1.968
725
0.992 − j0.266
3.211 + j1.923
750
0.993 − j0.165
3.103 + j1.874
775
0.995 − j0.068
3.000 + j1.822
800
0.996 + j0.026
2.900 + j1.766
825
0.997 + j0.117
2.804 + j1.708
850
0.999 + j0.206
2.711 + j1.648
875
1.000 + j0.292
2.623 + j1.586
900
1.002 + j0.376
2.538 + j1.521
BLF871_2
Preliminary data sheet
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Rev. 02 — 5 March 2009
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BLF871
NXP Semiconductors
UHF power LDMOS transistor
Table 8.
Typical impedance …continued
Simulated Zi and ZL device impedance; impedance info at VDS = 42 V.
f
Zi
ZL
MHz
Ω
Ω
925
1.004 + j0.459
2.456 + j2.455
950
1.005 + j0.540
2.378 + j2.388
975
1.007 + j0.619
2.303 + j2.320
1000
1.009 + j0.696
2.230 + j2.250
7.5 Reliability
001aaj287
105
Years
(1) (2) (3) (4) (5) (6)
104
103
102
10
(7) (8) (9) (10) (11)
1
0
2
4
6
IDS(DC) (A)
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 13. BLF871 electromigration (IDS(DC))
BLF871_2
Preliminary data sheet
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Rev. 02 — 5 March 2009
10 of 18
BLF871
NXP Semiconductors
UHF power LDMOS transistor
8. Test information
Table 9.
List of components
For test circuit, see Figure 14, Figure 15 and Figure 16.
Component
Description
Value
Remarks
C1, C2
multilayer ceramic chip capacitor
5.1 pF
[1]
C3, C4
multilayer ceramic chip capacitor
10 pF
[2]
C5
multilayer ceramic chip capacitor
6.8 pF
[1]
C6
multilayer ceramic chip capacitor
4.7 pF
[1]
C7
multilayer ceramic chip capacitor
2.7 pF
[1]
C8, C9, C10, C25, multilayer ceramic chip capacitor
C26
100 pF
[1]
C11, C27
multilayer ceramic chip capacitor
10 µF
C12
electrolytic capacitor
470 µF; 63 V
C20
multilayer ceramic chip capacitor
10 pF
[3]
C21
multilayer ceramic chip capacitor
8.2 pF
[3]
C22
trimmer
0.6 pF to 4.5 pF
TDK C570X7R1H106KT000N or
capacitor of same quality.
Tekelec
C23
multilayer ceramic chip capacitor
6.8 pF
[3]
C24
multilayer ceramic chip capacitor
3.9 pF
[3]
L1
stripline
-
[4]
(W × L) 7 mm × 15 mm
-
[4]
(W × L) 2.4 mm × 9 mm
(W × L) 2.4 mm × 10 mm
L2
stripline
L3
stripline
-
[4]
L4
stripline
-
[4]
(W × L) 2.4 mm × 25 mm
-
[4]
(W × L) 2.4 mm × 10 mm
-
[4]
(W × L) 2.0 mm × 20 mm
(W × L) 2.0 mm × 21 mm
L5
stripline
L6
stripline
L7
stripline
-
[4]
L20
stripline
-
[4]
(W × L) 7 mm × 12 mm
-
[4]
(W × L) 2.4 mm × 13 mm
-
[4]
(W × L) 2.4 mm × 31 mm
[4]
(W × L) 2.4 mm × 5 mm
L21
stripline
L22
stripline
L23
stripline
-
R1
resistor
100 Ω
R2
resistor
10 kΩ
[1]
American technical ceramics type 100B or capacitor of same quality.
[2]
American technical ceramics type 180R or capacitor of same quality.
[3]
American technical ceramics type 100A or capacitor of same quality.
[4]
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 µm.
BLF871_2
Preliminary data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 5 March 2009
11 of 18
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NXP Semiconductors
BLF871_2
Preliminary data sheet
VGG
R2
C11
C12
C27
VDD
C26
C9
R1
L6
C1
C20
50 Ω
C25
C3
L23
C8
L22
C24
L21
C23
C22
L20
L1
C21
C2
L2
C4
L3
C5
L4
C6
50 Ω
L5
C7
Rev. 02 — 5 March 2009
L7
C10
001aaj288
See Table 9 for a list of components.
Fig 14. Class-AB common-source broadband amplifier
BLF871
UHF power LDMOS transistor
12 of 18
© NXP B.V. 2009. All rights reserved.
BLF871
NXP Semiconductors
UHF power LDMOS transistor
76.2 mm
40 mm
40 mm
001aaj289
Fig 15. Printed-Circuit Board (PCB) for class-AB common source amplifier
BLF871_2
Preliminary data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 5 March 2009
13 of 18
BLF871
NXP Semiconductors
UHF power LDMOS transistor
R2
C11
C9
C12
C27
L6
C26
R1
C3
C1
C20
C25
L23
C22
L21
C24
L20
L1
L2
C21
C5
C2
C23
C4
C8
L3
L5
L7
C6
L23
C7
C10
L4
001aaj290
See Table 9 for a list of components.
Fig 16. Component layout for class-AB common source amplifier
BLF871_2
Preliminary data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 5 March 2009
14 of 18
BLF871
NXP Semiconductors
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT467C
D
A
F
3
D1
U1
B
q
c
C
1
E1
H
U2
E
A
w1 M A M B M
p
2
Q
w2 M C M
b
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
p
Q
q
U1
U2
w1
w2
mm
4.67
3.94
5.59
5.33
0.15
0.10
9.25
9.04
9.27
9.02
5.92
5.77
5.97
5.72
1.65
1.40
18.54
17.02
3.43
3.18
2.21
1.96
14.27
20.45
20.19
5.97
5.72
0.25
0.51
inch
0.184 0.220 0.006
0.155 0.210 0.004
0.364 0.365
0.356 0.355
0.233
0.227
0.235 0.065
0.225 0.055
0.73
0.67
0.135 0.087
0.805 0.235
0.562
0.010 0.020
0.125 0.077
0.795 0.225
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-12-06
99-12-28
SOT467C
Fig 17. Package outline SOT467C
BLF871_2
Preliminary data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 5 March 2009
15 of 18
BLF871
NXP Semiconductors
UHF power LDMOS transistor
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CW
Continuous Wave
CCDF
Complementary Cumulative Distribution Function
DVB
Digital Video Broadcast
DVB-T
Digital Video Broadcast - Terrestrial
ESD
ElectroStatic Discharge
HF
High Frequency
IMD3
Third order InterModulation Distortion
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
OFDM
Orthogonal Frequency Division Multiplexing
PAR
Peak-to-Average power Ratio
PEP
Peak Envelope Power
RF
Radio Frequency
TTF
Time To Failure
UHF
Ultra High Frequency
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF871_2
20090305
Preliminary data sheet
-
BLF871_1
Modifications:
BLF871_1
•
•
•
•
•
Table 1 on page 1: corrected some values
Section 1.2 on page 1: corrected some values
Table 6 on page 3: corrected some values
Table 6 on page 3: removed gfs specification
Table 7 on page 4: corrected some values.
20081218
Objective data sheet
BLF871_2
Preliminary data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 5 March 2009
16 of 18
BLF871
NXP Semiconductors
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF871_2
Preliminary data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 5 March 2009
17 of 18
BLF871
NXP Semiconductors
UHF power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.1.1
7.1.2
7.1.3
7.2
7.2.1
7.2.2
7.3
7.4
7.5
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 4
Narrowband RF figures. . . . . . . . . . . . . . . . . . . 5
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Broadband RF figures. . . . . . . . . . . . . . . . . . . . 7
2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ruggedness in class-AB operation. . . . . . . . . . 9
Impedance information . . . . . . . . . . . . . . . . . . . 9
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Test information . . . . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 5 March 2009
Document identifier: BLF871_2