DONGGUAN NANJING ELECTRONICS LTD., TO-126 Plastic-Encapsulate Transistors TO-126 BD135/BD137/BD139 TRANSISTOR (NPN) FEATURES 1. EMITTER ·High Current(1.5A) 2. COLLECTOR 3. BASE ·Low Voltage(80V) 123 MAXIMUM RATINGS (TA=25 =25℃ unless otherwise noted ) Symbol Parameter Value BD135 BD137 Units BD139 VCBO Collector-Base Voltage 45 60 80 V VCEO Collector-Emitter Voltage 45 60 80 V VEBO Emitter-Base Voltage IC Collector Current -Continuous PC 5 V 1.5 A Collector power dissipation 1.25 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ℃ ℃ unless otherwise specified) ELECTRICAL CHARACTERISTICS(Tamb=25 ℃unless Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol V(BR)CBO V(BR)CEO* Test conditions Ic=100µA,IE=0 Ic=30mA,IB=0 MIN BD135 45 BD137 60 BD139 80 BD135 45 BD137 60 BD139 80 TYP MAX UNIT V V V(BR)EBO IE=100µA,IC=0 Collector cut-off current ICBO VCB=30V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 10 µA hFE(1) VCE=2V,IC=5mA 25 hFE(2) VCE=2V,IC=150mA 40 hFE(3) VCE=2V,IC=500mA 25 Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage 5 V 250 VCE(sat) IC=500mA,IB=50mA 0.5 V VBE VCE=2V,IC=500mA 1 V *PULSE TEST CLASSIFICATION OF hFE(2) Rank Range 40-100 100-200 200-300 Typical Characteristics BD135/BD137/BD139