CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1205I3 BVCEO IC RCESAT Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 1/ 6 -20V -5A 127mΩ typ. Features • Low VCE(sat), VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA • Excellent DC current gain characteristics • Fast switching speed • Large current capacity • RoHS compliant package Applications • Strobe, voltage regulators, relay drivers, lamp drivers Symbol Outline BTB1805I3 B：Base C：Collector E：Emitter BTB1205I3 TO-251 B C E CYStek Product Specification Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 2/ 6 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : 1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC ICP IB Pd Pd Tj Tstg Limits -25 -20 -5 -5 -8 (Note 1) Unit V V V A A -0.5 1 10 150 -55~+150 W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE *hFE fT Cob Min. -25 -20 -5 190 60 - Typ. -380 -1.0 320 60 Max. -0.5 -0.5 -500 -1.3 380 - Unit V V V μA μA mV V MHz pF Test Conditions IC=-10μA, IE=0 IC=-1mA, IB=0 IE=-10μA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 IC=-3A, IB=-60mA IC=-3A, IB=-60mA VCE=-2V, IC=-0.5A VCE=-2V, IC=-4A VCE=-5V, IC=-200mA, f =100MHz VCB=-10V, f =1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTB1205I3 BTB1205I3 Package TO-251 (RoHS compliant) Shipping Marking 80 pcs / tube, 50 tubes / box B1205 CYStek Product Specification Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 3/ 6 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 10000 Saturation Voltage---(mV) Current Gain---HFE VCE=2V 100 VCE=1V VCESAT 1000 IC=100IB IC=40IB IC=50IB 100 IC=30IB 10 10 1 10 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Collector Current---IC(mA) Saturation Voltage vs Collector Current Output Characteristics 7 10000 Collector Current---IC(A) Saturation Voltage---(mV) IB=50mA 6 VBESAT@IC=10IB 1000 5 IB=25mA 4 IB=20mA IB=15mA 3 IB=10mA 2 IB=5mA 1 IB=0 100 0 1 10 100 1000 Collector Current---IC(mA) 0 10000 Output Characteristics 6 Power Derating Curves 12 4 Power Dissipation---PD(W) IB=20mA 3.5 Collector Current---IC(A) 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 3 2.5 IB=10mA 2 1.5 IB=6mA 1 IB=4mA IB=2mA 0.5 IB=0 0 0 BTB1205I3 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 10 8 6 4 2 No heat sink 0 6 0 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 4/ 6 Characteristic Curves(Cont.) On Voltage vs Collector Current 10000 On Voltage---(mV) VBEON@VCE=2V 1000 100 1 BTB1205I3 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 5/ 6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature BTB1205I3 Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. CYStek Product Specification Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 6/ 6 CYStech Electronics Corp. TO-251 Dimension A B C Marking: D B1205 F G 3 K E I H 2 1 Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 J *: Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead :KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1205I3 CYStek Product Specification