Comchip CURL102 Smd ultra fast recovery rectifier Datasheet

SMD Ultra Fast Recovery Rectifier
COMCHIP
www.comchiptech.com
CURL101 Thru CURL107
Reverse Voltage: 50 - 1000 Volts
Forward Current: 1.0 Amp
Features
DO-213AB (Plastic Melf)
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Ultra fast recovery time: 50 - 75 nS
Low leakage current
0.205(5.2)
0.022(0.55)
Max.
0.195(4.8)
Mechanical data
Case: DO-213AB molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight:0.116 gram
0.105(2.67)
0.095(2.40)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics
Symbol
CURL
101
CURL
102
CURL
103
CURL
104
CURL
105
CURL
106
CURL
107
Unit
Max. Repetitive Peak Reverse Voltage
V RRM
50
100
200
400
600
800
1000
V
Max. DC Blocking Voltage
V DC
50
100
200
400
600
800
1000
V
V RMS
35
70
140
280
420
560
700
V
Parameter
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
I FSM
30
A
Max. Average Forward Current
Io
1.0
A
Max. Instantaneous Forward Current
at 1.0 A
VF
Reverse recovery time
Trr
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25 C
Ta=100 C
IR
1.3
1.0
50
1.7
75
V
nS
5.0
100
uA
60
C/W
Max. Thermal Resistance (Note 1)
R
Operating Junction Temperature
Tj
-55 to +150
C
Storage Temperature
T STG
-55 to +150
C
JA
Note 1: Thermal resistance from junction to ambient.
MDS0210011B
Page 1
SMD Ultra Fast Recovery Rectifier
COMCHIP
www.comchiptech.com
Rating and Characteristic Curves (CURL101 Thru CURL107)
Fig.2 - Forward Characteristics
Fig. 1 - Reverse Characteristics
1000
Tj=25 C
1.0
4
10
CU
RL
1.0
7
10
510
RL
0.1
CU
10
RL
10
100
CU
Tj=125 C
Forward Current ( A )
Reverse Current ( uA )
1-1
03
10
0.01
Tj=25 C
Pulse width 300uS
4% duty cycle
0.1
0
0.001
20
40
60
80
100 120
140
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Non Repetitive Forward
Surge Current
=1MHz and applied
4VDC reverse voltage
60
50
40
CU
30
CU
20
RL
10
RL
5-
10
10
1-
10
30
Peak Surge Forward Current ( A )
Junction Capacitance (pF)
70
4
7
8.3mS Single Half Sine
Wave JEDEC methode
25
20
15
10
Tj=25 C
5
10
0
0.1
1.0
10
100
0
1000
1
5
10
50
1 00
Reverse Voltage (V)
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
1.4
trr
10W
NONINDUCTIVE
|
|
|
|
|
|
|
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+0.5A
( )
(+)
25Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
( )
1W
NONINDUCTIVE
Average Forward Current ( A )
50W
NONINDUCTIVE
0
-0.25A
(+)
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1.2
1.0
0.8
0.6
0.4
Single Phase
Half Wave 60Hz
0.2
00
25
50
75
100
125
150
175
1cm
SET TIME BASE FOR
Ambient Temperature ( C)
50 / 10ns / cm
MDS0210011B
Page 2
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