Fairchild FFB3906 Pnp multi-chip general purpose amplifier Datasheet

E2
MMPQ3906
C2
B2
E1
C1
C1
E1
C2
SC70-6
Mark: .2A
B2
E3
E4
B4
B2
B1
pin #1
B1
E2
B3
E2
E1
pin #1 B1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
pin #1 C1
SuperSOT-6
SOIC-16
Mark: .2A
Mark: MMPQ3906
C2
C1
C3
C2
C4
C4
C3
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 µA to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
40
V
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
 1998 Fairchild Semiconductor Corporation
Max
FFB3904
300
2.4
415
FMB3904
700
5.6
180
Units
MMPQ3904
1,000
8.0
125
240
mW
mW/°C
°C/W
°C/W
°C/W
FFB3906 / FMB3906 / MMPQ3906
FMB3906
FFB3906
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)CEO
IC = 1.0 mA, IB = 0
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
40
V
IC = 10 µA, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
V
IBL
Base Cutoff Current
VCE = 30 V, VBE = 3.0 V
50
nA
ICEX
Collector Cutoff Current
VCE = 30 V, VBE = 3.0 V
50
nA
ON CHARACTERISTICS
hFE
DC Current Gain *
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
60
80
100
60
30
300
0.25
0.4
0.85
0.95
0.65
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo
Input Capacitance
NF
Noise Figure (except MMPQ3906)
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 100 kHz
VEB = 0.5 V, IC = 0,
f = 100 kHz
IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ, f=10 Hz to 15.7 kHz
450
MHz
3.0
pF
8.0
pF
2.5
dB
ns
SWITCHING CHARACTERISTICS
td
Delay Time
VCC = 3.0 V, VBE = 0.5 V,
15
tr
Rise Time
IC = 10 mA, IB1 = 1.0 mA
20
ns
ts
Storage Time
VCC = 3.0 V, IC = 10mA
110
ns
tf
Fall Time
IB1 = IB2 = 1.0 mA
40
ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
FFB3906 / FMB3906 / MMPQ3906
PNP Multi-Chip General Purpose Amplifier
(continued)
250
V CE = 1.0V
125 °C
200
150
25 °C
100
- 40 °C
50
0.1 0.2
0.5 1
2
5
10 20
I C - COLLECTOR CURRENT (mA)
50
100
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
1
- 40 ºC
0.8
25 °C
125 ºC
0.6
0.4
0.2
0
1
10
100
I C - COLLECTOR CURRENT (mA)
200
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
β = 10
0.25
0.2
0.15
25 °C
0.1
125 ºC
0.05
VBE(ON) - BASE EMITTER ON VOLTAGE (V)
V BESAT - BASE EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
V CESAT - COLLECTOR EMITTER VOLTAGE (V)
Typical Characteristics
0
- 40 ºC
1
1
0.8
- 40 ºC
125 ºC
0.4
V CE = 1V
0.2
0
0.1
1
10
I C - COLLECTOR CURRENT (mA)
25
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
= 25V
10
CB
C obo
10
CAPACITANCE (pF)
I CBO - COLLECTOR CURRENT (nA)
25 °C
0.6
100
1
0.1
0.01
25
200
Base Emitter ON Voltage vs
Collector Current
Collector-Cutoff Current
vs Ambient Temperature
V
10
100
I C - COLLECTOR CURRENT (mA)
50
75
100
TA - AMBIENT TEMPERATURE ( º C)
125
8
6
4
C ibo
2
0
0.1
1
REVERSE BIAS VOLTAGE (V)
10
FFB3906 / FMB3906 / MMPQ3906
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Noise Figure vs Frequency
Noise Figure vs Source Resistance
6
12
NF - NOISE FIGURE (dB)
NF - NOISE FIGURE (dB)
V CE = 5.0V
5
4
3
I C = 100 µA, R S = 200Ω
2
I C = 1.0 mA, R S = 200Ω
1
I C = 100 µA, R S = 2.0 kΩ
0
0.1
1
10
f - FREQUENCY (kHz)
V CE = 5.0V
f = 1.0 kHz
10
I C = 1.0 mA
8
6
4
I C = 100 µA
2
0
0.1
100
1
10
R S - SOURCE RESISTANCE ( kΩ )
Switching Times
vs Collector Current
Turn On and Turn Off Times
vs Collector Current
500
500
ts
tf
10
I B1 = I B2 =
tr
Ic
t off
100
TIME (nS)
100
t on I
B1 =
Ic
10
t on
VBE(OFF) = 0.5V
10
Ic
t off I = I =
B1
B2
10
10
td
1
1
10
I C - COLLECTOR CURRENT (mA)
100
1
1
10
I C - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)
TIME (nS)
100
SOIC-16
SOT-6
0.75
0.5
SC70-6
0.25
0
0
25
50
75
100
TEMPERATURE (º C)
125
150
100
FFB3906 / FMB3906 / MMPQ3906
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
Input Impedance
Voltage Feedback Ratio
)
10
100
h ie - INPUT IMPEDANCE (k Ω)
_4
h re - VOLTAGE FEEDBACK RATIO (x10
(continued)
10
1
0.1
1
I C - COLLECTOR CURRENT (mA)
1
0.1
0.1
10
1
I C - COLLECTOR CURRENT (mA)
10
Current Gain
1000
V CE = 10 V
f = 1.0 kHz
500
h fe - CURRENT GAIN
h oe - OUTPUT ADMITTANCE ( µmhos)
Output Admittance
1000
VCE = 10 V
f = 1.0 kHz
100
V CE = 10 V
f = 1.0 kHz
200
100
50
20
10
0.1
1
I C - COLLECTOR CURRENT (mA)
10
10
0.1
1
I C - COLLECTOR CURRENT (mA)
10
FFB3906 / FMB3906 / MMPQ3906
PNP Multi-Chip General Purpose Amplifier
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
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SuperSOT™-8
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
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user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.