ON CAT25256VI-GT2 256-kb spi serial cmos eeprom Datasheet

CAT25256
256-Kb SPI Serial CMOS
EEPROM
Description
The CAT25256 is a 256−Kb Serial CMOS EEPROM device
internally organized as 32Kx8 bits. This features a 64−byte page write
buffer and supports the Serial Peripheral Interface (SPI) protocol. The
device is enabled through a Chip Select (CS) input. In addition, the
required bus signals are clock input (SCK), data input (SI) and data
output (SO) lines. The HOLD input may be used to pause any serial
communication with the CAT25256 device. The device features
software and hardware write protection, including partial as well as
full array protection.
On−Chip ECC (Error Correction Code) makes the device suitable
for high reliability applications.*
http://onsemi.com
SOIC−8
V SUFFIX
CASE 751BD
UDFN−8
HU4 SUFFIX
CASE 517AZ
PDIP−8
L SUFFIX
CASE 646AA
TSSOP−8
Y SUFFIX
CASE 948AL
SOIC−8
X SUFFIX
CASE 751BE
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
20 MHz (5 V) SPI Compatible
1.8 V to 5.5 V Supply Voltage Range
SPI Modes (0,0) & (1,1)
64−byte Page Write Buffer
Additional Identification Page with Permanent Write Protection
(New Product)
Self−timed Write Cycle
Hardware and Software Protection
Block Write Protection
− Protect 1/4, 1/2 or Entire EEPROM Array
Low Power CMOS Technology
1,000,000 Program/Erase Cycles
100 Year Data Retention
Industrial and Extended Temperature Range
8−lead PDIP, SOIC, TSSOP and 8−pad UDFN and TDFN Packages
This Device is Pb−Free, Halogen Free/BFR Free, and RoHS
Compliant
VCC
SI
CAT25256
WP
PIN CONFIGURATIONS
CS
SO
WP
VSS
** Not recommended for new designs.
PIN FUNCTION
Pin
Name†
CS
Chip Select
Serial Data Output
WP
Write Protect
VSS
Ground
Serial Data Input
VCC
SCK
Function
SO
HOLD
HOLD
VCC
HOLD
SCK
SI
(Top View)
SCK
SO
1
PDIP (L), SOIC (V, X), TSSOP (Y),
UDFN (HU4), TDFN** (ZD2)
SI
CS
TDFN−8**
ZD2 SUFFIX
CASE 511AM
Serial Clock
Hold Transmission Input
Power Supply
†The exposed pad for the TDFN/UDFN packages can
be left floating or connected to Ground.
VSS
Figure 1. Functional Symbol
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 20 of this data sheet.
* Available for New Product (Rev. E)
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 7
1
Publication Order Number:
CAT25256/D
CAT25256
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Parameter
Symbol
NEND (Note 3, 4)
TDR
Endurance
Data Retention
Min
Units
1,000,000
Program / Erase Cycles
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, VCC = 5 V, 25°C.
4. The new product revision (E) uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when
a single byte has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order
to benefit from the maximum number of write cycles.
Table 3. D.C. OPERATING CHARACTERISTICS − MATURE PRODUCT
(VCC = 1.8 V to 5.5 V, TA = −40°C to +85°C and VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICCR
Supply Current
(Read Mode)
Read, VCC = 5.5 V,
SO open
10 MHz / −40°C to 85°C
2
mA
5 MHz / −40°C to 125°C
2
mA
ICCW
Supply Current
(Write Mode)
Write, VCC = 5.5 V,
SO open
10 MHz / −40°C to 85°C
4
mA
5 MHz / −40°C to 125°C
4
mA
Standby Current
VIN = GND or VCC, CS = VCC,
WP = VCC, HOLD = VCC,
VCC = 5.5 V
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
3
mA
VIN = GND or VCC, CS = VCC,
WP = GND, HOLD = GND,
VCC = 5.5 V
TA = −40°C to +85°C
4
mA
TA = −40°C to +125°C
5
mA
−2
2
mA
TA = −40°C to +85°C
−1
1
mA
TA = −40°C to +125°C
−1
2
mA
ISB1
ISB2
IL
ILO
Standby Current
Input Leakage Current
VIN = GND or VCC
Output Leakage
Current
CS = VCC,
VOUT = GND or VCC
VIL
Input Low Voltage
−0.5
0.3 VCC
V
VIH
Input High Voltage
0.7 VCC
VCC + 0.5
V
VOL1
Output Low Voltage
VCC > 2.5 V, IOL = 3.0 mA
0.4
V
VOH1
Output High Voltage
VCC > 2.5 V, IOH = −1.6 mA
VOL2
Output Low Voltage
VCC > 1.8 V, IOL = 150 mA
VOH2
Output High Voltage
VCC > 1.8 V, IOH = −100 mA
VCC − 0.8 V
V
0.2
VCC − 0.2 V
http://onsemi.com
2
V
V
CAT25256
Table 4. D.C. OPERATING CHARACTERISTICS − NEW PRODUCT (Rev E)
(VCC = 1.8 V to 5.5 V, TA = −40°C to +85°C and VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.)
Symbol
ICCR
ICCW
ISB1
ISB2
IL
Parameter
Supply Current
(Read Mode)
Supply Current
(Write Mode)
Standby Current
Standby Current
Test Conditions
Max
Units
VCC = 1.8 V, fSCK = 5 MHz
0.8
mA
VCC = 2.5 V, fSCK =10 MHz
1.2
VCC = 5.5 V, fSCK = 20 MHz
3.0
Read, SO open /
−40°C to +125°C
2.5 V< VCC < 5.5 V,
fSCK = 10 MHz
2.0
Write, CS = VCC/
−40°C to +85°C
VCC = 1.8 V
1.5
VCC = 2.5 V
2
VCC = 5.5 V
2
Write, CS = VCC/
−40°C to +125°C
2.5 V< VCC < 5.5 V
2
VIN = GND or VCC,
CS = VCC, WP = VCC,
VCC = 5.5 V
TA = −40°C to +85°C
1
TA = −40°C to +125°C
3
VIN = GND or VCC,
CS = VCC, WP = GND,
VCC = 5.5 V
TA = −40°C to +85°C
3
TA = −40°C to +125°C
5
Read, SO open /
−40°C to +85°C
Input Leakage Current
VIN = GND or VCC
Output Leakage
Current
CS = VCC
VOUT = GND or VCC
VIL1
Input Low Voltage
VIH1
Min
mA
mA
mA
−2
2
mA
TA = −40°C to +85°C
−1
1
mA
TA = −40°C to +125°C
−1
2
VCC ≥ 2.5 V
−0.5
0.3 VCC
V
Input High Voltage
VCC ≥ 2.5 V
0.7 VCC
VCC + 0.5
V
VIL2
Input Low Voltage
VCC < 2.5 V
−0.5
0.25 VCC
V
0.75 VCC
VCC + 0.5
V
0.4
V
ILO
VIH2
Input High Voltage
VCC < 2.5 V
VOL1
Output Low Voltage
VCC ≥ 2.5 V, IOL = 3.0 mA
VOH1
Output High Voltage
VCC ≥ 2.5 V, IOH = −1.6 mA
VOL2
Output Low Voltage
VCC < 2.5 V, IOL = 150 mA
VOH2
Output High Voltage
VCC < 2.5 V, IOH = −100 mA
VCC − 0.8 V
V
0.2
VCC − 0.2 V
V
V
Table 5. PIN CAPACITANCE (Note 5) (TA = 25°C, f = 1.0 MHz, VCC = +5.0 V)
Test
Symbol
COUT
CIN
Conditions
Output Capacitance (SO)
Input Capacitance (CS, SCK, SI, WP, HOLD)
Min
Typ
Max
Units
VOUT = 0 V
8
pF
VIN = 0 V
8
pF
5. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
http://onsemi.com
3
CAT25256
Table 6. A.C. CHARACTERISTICS − MATURE PRODUCT
(TA = −40°C to +85°C (Industrial) and TA = −40°C to +125°C (Extended).) (Notes 6, 9)
Symbol
VCC = 1.8 V − 5.5 V / −405C to +855C
VCC = 2.5 V − 5.5 V
VCC = 2.5 V − 5.5 V / −405C to +1255C
−405C to +855C
Parameter
Min
Max
Min
Max
Units
5
DC
10
MHz
fSCK
Clock Frequency
DC
tSU
Data Setup Time
40
20
ns
tH
Data Hold Time
40
20
ns
tWH
SCK High Time
75
40
ns
tWL
SCK Low Time
75
40
ns
tLZ
HOLD to Output Low Z
50
25
ns
tRI (Note 7)
Input Rise Time
2
2
ms
tFI (Note 7)
Input Fall Time
2
2
ms
tHD
HOLD Setup Time
0
0
ns
tCD
HOLD Hold Time
10
10
ns
tV
Output Valid from Clock Low
tHO
Output Hold Time
tDIS
Output Disable Time
tHZ
HOLD to Output High Z
75
0
40
0
ns
ns
50
20
ns
100
25
ns
tCS
CS High Time
140
70
ns
tCSS
CS Setup Time
30
15
ns
tCSH
CS Hold Time
30
15
ns
tCNS
CS Inactive Setup Time
20
15
ns
tCNH
CS Inactive Hold Time
20
15
ns
tWPS
WP Setup Time
10
10
ns
tWPH
WP Hold Time
100
60
ns
tWC (Note 8)
Write Cycle Time
5
5
ms
6. AC Test Conditions:
Input Pulse Voltages: 0.3 VCC to 0.7 VCC
Input rise and fall times: ≤ 10 ns
Input and output reference voltages: 0.5 VCC
Output load: current source IOL max/IOH max; CL = 50 pF
7. This parameter is tested initially and after a design or process change that affects the parameter.
8. tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
9. All Chip Select (CS) timing parameters are defined relative to the positive clock edge (Figure 2). tCSH timing specification is valid
for die revision C and higher. The die revision C is identified by letter “C” or a dedicated marking code on top of the package. For
previous product revision (Rev. B) the tCSH is defined relative to the negative clock edge.
Table 7. POWER−UP TIMING (Notes 7, 10)
Symbol
Parameter
Max
Units
tPUR
Power−up to Read Operation
1
ms
tPUW
Power−up to Write Operation
1
ms
10. tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
http://onsemi.com
4
CAT25256
Table 8. A.C. CHARACTERISTICS – NEW PRODUCT (Rev E) (VCC = 1.8 V to 5.5 V, TA = −40°C to +85°C (Industrial) and
VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.) (Note 11)
VCC = 1.8 V − 5.5 V
−405C to +855C
Symbol
Parameter
VCC = 2.5 V − 5.5 V
−405C to +1255C
VCC = 4.5 V − 5.5 V
−405C to +855C
Min
Max
Min
Max
Min
Max
Units
5
DC
10
DC
20
MHz
fSCK
Clock Frequency
DC
tSU
Data Setup Time
20
10
5
ns
tH
Data Hold Time
20
10
5
ns
tWH
SCK High Time
75
40
20
ns
tWL
SCK Low Time
75
40
20
ns
tLZ
HOLD to Output Low Z
50
25
25
ns
tRI (Note 12)
Input Rise Time
2
2
2
ms
tFI (Note 12)
Input Fall Time
2
2
2
ms
tHD
HOLD Setup Time
0
tCD
HOLD Hold Time
10
tV
Output Hold Time
tDIS
Output Disable Time
0
10
Output Valid from Clock Low
tHO
tHZ
0
75
0
5
ns
40
0
HOLD to Output High Z
ns
20
0
ns
ns
50
20
20
ns
100
25
25
ns
tCS
CS High Time
80
40
20
ns
tCSS
CS Setup Time
30
30
15
ns
tCSH
CS Hold Time
30
30
20
ns
tCNS
CS Inactive Setup Time
20
20
15
ns
tCNH
CS Inactive Hold Time
20
20
15
ns
tWPS
WP Setup Time
10
10
10
ns
tWPH
WP Hold Time
10
10
10
ns
tWC (Note 13)
Write Cycle Time
5
5
5
ms
11. AC Test Conditions:
Input Pulse Voltages: 0.3 VCC to 0.7 VCC
Input rise and fall times: ≤ 10 ns
Input and output reference voltages: 0.5 VCC
Output load: current source IOL max/IOH max; CL = 30 pF
12. This parameter is tested initially and after a design or process change that affects the parameter.
13. tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
Table 9. POWER−UP TIMING (Notes 12, 14)
Symbol
Parameter
Min
Max
Units
tPUR
Power−up to Read Operation
0.1
1
ms
tPUW
Power−up to Write Operation
0.1
1
ms
14. tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
http://onsemi.com
5
CAT25256
Pin Description
Functional Description
SI: The serial data input pin accepts op−codes, addresses
and data. In SPI modes (0,0) and (1,1) input data is latched
on the rising edge of the SCK clock input.
SO: The serial data output pin is used to transfer data out of
the device. In SPI modes (0,0) and (1,1) data is shifted out
on the falling edge of the SCK clock.
SCK: The serial clock input pin accepts the clock provided
by the host and used for synchronizing communication
between host and CAT25256.
CS: The chip select input pin is used to enable/disable the
CAT25256. When CS is high, the SO output is tri−stated (high
impedance) and the device is in Standby Mode (unless an
internal write operation is in progress). Every communication
session between host and CAT25256 must be preceded by a
high to low transition and concluded with a low to high
transition of the CS input.
WP: The write protect input pin will allow all write
operations to the device when held high. When WP pin is
tied low and the WPEN bit in the Status Register (refer to
Status Register description, later in this Data Sheet) is set to
“1”, writing to the Status Register is disabled.
HOLD: The HOLD input pin is used to pause transmission
between host and CAT25256, without having to retransmit
the entire sequence at a later time. To pause, HOLD must be
taken low and to resume it must be taken back high, with the
SCK input low during both transitions. When not used for
pausing, it is recommended the HOLD input to be tied to
VCC, either directly or through a resistor.
The CAT25256 device supports the Serial Peripheral
Interface (SPI) bus protocol, modes (0,0) and (1,1). The
device contains an 8−bit instruction register. The instruction
set and associated op−codes are listed in Table 10.
Reading data stored in the CAT25256 is accomplished by
simply providing the READ command and an address.
Writing to the CAT25256, in addition to a WRITE
command, address and data, also requires enabling the
device for writing by first setting certain bits in a Status
Register, as will be explained later.
After a high to low transition on the CS input pin, the
CAT25256 will accept any one of the six instruction
op−codes listed in Table 10 and will ignore all other possible
8−bit combinations. The communication protocol follows
the timing from Figure 2.
The CAT25256, New Product Rev E features an
additional Identification Page (64 bytes) which can be
accessed for Read and Write operations when the IPL bit
from the Status Register is set to “1”. The user can also
choose to make the Identification Page permanent write
protected.
Table 10. INSTRUCTION SET
Instruction
Opcode
WREN
0000 0110
Enable Write Operations
Operation
WRDI
0000 0100
Disable Write Operations
RDSR
0000 0101
Read Status Register
WRSR
0000 0001
Write Status Register
READ
0000 0011
Read Data from Memory
WRITE
0000 0010
Write Data to Memory
tCS
CS
tCSS
tCNH
tWH
tWL
tCSH
tCNS
SCK
tSU
tH
tRI
tFI
VALID
IN
SI
tV
tV
tDIS
tHO
SO
HI−Z
VALID
OUT
Figure 2. Synchronous Data Timing
http://onsemi.com
6
HI−Z
CAT25256
Status Register
protected sections of memory. While hardware write
protection is active, only the non−block protected memory
can be written. Hardware write protection is disabled when
the WP pin is high or the WPEN bit is 0. The WPEN bit, WP
pin and WEL bit combine to either permit or inhibit Write
operations, as detailed in Table 13.
The IPL (Identification Page Latch) bit determines
whether the additional Identification Page (IPL = 1) or main
memory array (IPL = 0) can be accessed both for Read and
Write operations. The IPL bit is set by the user with the
WRSR command and is volatile. The IPL bit is
automatically reset after read/write operations.
The LIP bit is set by the user with the WRSR command
and is non−volatile. When set to 1, the Identification Page is
permanently write protected (locked in Read−only mode).
Note: The IPL and LIP bits cannot be set to 1 using the
same WRSR instruction. If the user attempts to set (“1”)
both the IPL and LIP bit in the same time, these bits cannot
be written and therefore they will remain unchanged.
The Status Register, as shown in Table 11, contains a
number of status and control bits.
The RDY (Ready) bit indicates whether the device is busy
with a write operation. This bit is automatically set to 1 during
an internal write cycle, and reset to 0 when the device is ready
to accept commands. For the host, this bit is read only.
The WEL (Write Enable Latch) bit is set/reset by the
WREN/WRDI commands. When set to 1, the device is in a
Write Enable state and when set to 0, the device is in a Write
Disable state.
The BP0 and BP1 (Block Protect) bits determine which
blocks are currently write protected. They are set by the user
with the WRSR command and are non−volatile. The user is
allowed to protect a quarter, one half or the entire memory,
by setting these bits according to Table 12. The protected
blocks then become read−only.
The WPEN (Write Protect Enable) bit acts as an enable for
the WP pin. Hardware write protection is enabled when the
WP pin is low and the WPEN bit is 1. This condition
prevents writing to the status register and to the block
Table 11. STATUS REGISTER
7
6
5
4
3
2
1
0
WPEN
IPL*
0
LIP*
BP1
BP0
WEL
RDY
*IPL and LIP bits are available for the New Product only. For older product revisions, the status register bit 6 and bit 4 are set to ‘0’.
Table 12. BLOCK PROTECTION BITS
Status Register Bits
BP1
BP0
Array Address Protected
Protection
0
0
None
No Protection
0
1
6000−7FFF
Quarter Array Protection
1
0
4000−7FFF
Half Array Protection
1
1
0000−7FFF
Full Array Protection
Table 13. WRITE PROTECT CONDITIONS
WPEN
WP
WEL
Protected Blocks
Unprotected Blocks
Status Register
0
X
0
Protected
Protected
Protected
0
X
1
Protected
Writable
Writable
1
Low
0
Protected
Protected
Protected
1
Low
1
Protected
Writable
Protected
X
High
0
Protected
Protected
Protected
X
High
1
Protected
Writable
Writable
http://onsemi.com
7
CAT25256
WRITE OPERATIONS
The CAT25256 device powers up into a write disable
state. The device contains a Write Enable Latch (WEL)
which must be set before attempting to write to the memory
array or to the status register. In addition, the address of the
memory location(s) to be written must be outside the
protected area, as defined by BP0 and BP1 bits from the
status register.
instruction to the CAT25256. Care must be taken to take the
CS input high after the WREN instruction, as otherwise the
Write Enable Latch will not be properly set. WREN timing
is illustrated in Figure 3. The WREN instruction must be
sent prior to any WRITE or WRSR instruction.
The internal write enable latch is reset by sending the
WRDI instruction as shown in Figure 4. Disabling write
operations by resetting the WEL bit, will protect the device
against inadvertent writes.
Write Enable and Write Disable
The internal Write Enable Latch and the corresponding
Status Register WEL bit are set by sending the WREN
CS
SCK
0
SI
SO
0
0
0
0
1
1
0
HIGH IMPEDANCE
Dashed Line = mode (1, 1)
Figure 3. WREN Timing
CS
SCK
SI
SO
0
0
0
0
0
1
0
HIGH IMPEDANCE
Dashed Line = mode (1, 1)
Figure 4. WRDI Timing
http://onsemi.com
8
0
CAT25256
Byte Write
automatically returned to the write disable state. While the
internal write cycle is in progress, the RDSR command will
output the RDY (Ready) bit status only (i.e., data out = FFh).
Once the WEL bit is set, the user may execute a write
sequence, by sending a WRITE instruction, a 16−bit address
and data as shown in Figure 5. Only 15 significant address
bits are used by the CAT25256. The 16th address bit is don’t
care, as shown in Table 14. Internal programming will start
after the low to high CS transition. During an internal write
cycle, all commands, except for RDSR (Read Status
Register) will be ignored. The RDY bit will indicate if the
internal write cycle is in progress (RDY high), or the device
is ready to accept commands (RDY low).
Write Identification Page
The additional 64−byte Identification Page (IP) can be
written with user data using the same Write commands
sequence as used for Page Write to the main memory array
(Figure 6). The IPL bit from the Status Register must be set
(IPL = 1) using the WRSR instruction, before attempting
to write to the IP.
The address bits [A15:A6] are Don’t Care and the
[A5:A0] bits define the byte address within the
Identification Page. In addition, the Byte Address must point
to a location outside the protected area defined by the BP1,
BP0 bits from the Status Register. When the full memory
array is write protected (BP1, BP0 = 1,1), the write
instruction to the IP is not accepted and not executed.
Also, the write to the IP is not accepted if the LIP bit from
the Status Register is set to 1 (the page is locked in
Read−only mode).
Page Write
After sending the first data byte to the CAT25256, the host
may continue sending data, up to a total of 64 bytes,
according to timing shown in Figure 6. After each data byte,
the lower order address bits are automatically incremented,
while the higher order address bits (page address) remain
unchanged. If during this process the end of page is
exceeded, then loading will “roll over” to the first byte in the
page, thus possibly overwriting previously loaded data.
Following completion of the write cycle, the CAT25256 is
Table 14. BYTE ADDRESS
Address Significant Bits
Address Don’t Care Bits
# Address Clock Pulses
Main Memory Array
A14 − A0
A15
16
Identification Page*
A5 − A0
A15 − A6
16
*New Product only.
CS
0
1
2
3
4
5
6
7
21
8
22 23
24
25
26 27
28
29
30 31
SCK
OPCODE
SI
0
0
0
0
0
0
DATA IN
BYTE ADDRESS*
1
0
A0 D7 D6 D5 D4 D3 D2 D1 D0
AN
HIGH IMPEDANCE
SO
* Please check the Byte Address Table (Table 14)
Dashed Line = mode (1, 1)
Figure 5. Byte WRITE Timing
CS
0
1
2
3
4
5
6
7
8
21
SCK
0
0
0
0
0
0
23 24−31 32−39 24+(N−1)x8−1 .. 24+(N−1)x8
24+Nx8−1
BYTE ADDRESS*
OPCODE
SI
22
1
0
AN
DATA IN
A0
Data Data Data
Byte 1 Byte 2 Byte 3
HIGH IMPEDANCE
SO
Dashed Line = mode (1, 1)
Data Byte N
7..1
0
* Please check the Byte Address Table (Table 14)
Figure 6. Page WRITE Timing
http://onsemi.com
9
CAT25256
Write Status Register
Write Protection
The Status Register is written by sending a WRSR
instruction according to timing shown in Figure 7. Only bits
2, 3, 4, 6 and 7 can be written using the WRSR command.
The Write Protect (WP) pin can be used to protect the
Block Protect bits BP0 and BP1 against being inadvertently
altered. When WP is low and the WPEN bit is set to “1”,
write operations to the Status Register are inhibited. WP
going low while CS is still low will interrupt a write to the
status register. If the internal write cycle has already been
initiated, WP going low will have no effect on any write
operation to the Status Register. The WP pin function is
blocked when the WPEN bit is set to “0”. The WP input
timing is shown in Figure 8.
CS
0
1
2
3
4
5
6
7
8
9
10
11
1
7
6
5
4
12
13
14
15
2
1
0
SCK
OPCODE
SI
0
0
0
0
0
DATA IN
0
0
MSB
HIGH IMPEDANCE
SO
Dashed Line = mode (1, 1)
Figure 7. WRSR Timing
tWPS
tWPH
CS
SCK
WP
WP
Dashed Line = mode (1, 1)
Figure 8. WP Timing
http://onsemi.com
10
3
CAT25256
READ OPERATIONS
Read from Memory Array
address register defined by [A5:A0] bits is automatically
incremented and the next data byte from the IP is shifted out.
The byte address must not exceed the 64−byte page
boundary.
To read from memory, the host sends a READ instruction
followed by a 16−bit address (see Table 14 for the number
of significant address bits).
After receiving the last address bit, the CAT25256 will
respond by shifting out data on the SO pin (as shown in
Figure 9). Sequentially stored data can be read out by simply
continuing to run the clock. The internal address pointer is
automatically incremented to the next higher address as data
is shifted out. After reaching the highest memory address,
the address counter “rolls over” to the lowest memory
address, and the read cycle can be continued indefinitely.
The read operation is terminated by taking CS high.
Read Status Register
To read the status register, the host simply sends a RDSR
command. After receiving the last bit of the command, the
CAT25256 will shift out the contents of the status register on
the SO pin (Figure 10). The status register may be read at
any time, including during an internal write cycle. While the
internal write cycle is in progress, the RDSR command will
output the full content of the status register (New product,
Rev. E) or the RDY (Ready) bit only (i.e., data out = FFh) for
previous product revisions C, D (Mature product). For easy
detection of the internal write cycle completion, both during
writing to the memory array and to the status register, we
recommend sampling the RDY bit only through the polling
routine. After detecting the RDY bit “0”, the next RDSR
instruction will always output the expected content of the
status register.
Read Identification Page
Reading the additional 64−byte Identification Page (IP) is
achieved using the same Read command sequence as used
for Read from main memory array (Figure 9). The IPL bit
from the Status Register must be set (IPL = 1) before
attempting to read from the IP. The [A5:A0] are the address
significant bits that point to the data byte shifted out on the
SO pin. If the CS continues to be held low, the internal
CS
0
1
2
3
4
5
6
7
8
20 21
10
9
22 23
24
25
26 27
28 29
30
SCK
OPCODE
SI
0
0
0
0
0
0
BYTE ADDRESS*
1
1
A0
AN
DATA OUT
HIGH IMPEDANCE
SO
7
Dashed Line = mode (1, 1)
* Please check the Byte Address Table (Table 14)
6
5
4
3
2
1
0
MSB
Figure 9. READ Timing
CS
0
1
2
3
4
5
6
7
1
0
1
8
9
10
6
5
11
12
13
14
2
1
SCK
OPCODE
SI
SO
0
0
0
0
0
DATA OUT
HIGH IMPEDANCE
7
MSB
Dashed Line = mode (1, 1)
Figure 10. RDSR Timing
http://onsemi.com
11
4
3
0
CAT25256
Hold Operation
below the POR trigger level. This bi−directional POR
behavior protects the device against ‘brown−out’ failure
following a temporary loss of power.
The CAT25256 device powers up in a write disable state
and in a low power standby mode. A WREN instruction
must be issued prior to any writes to the device.
After power up, the CS pin must be brought low to enter
a ready state and receive an instruction. After a successful
byte/page write or status register write, the device goes into
a write disable mode. The CS input must be set high after the
proper number of clock cycles to start the internal write
cycle. Access to the memory array during an internal write
cycle is ignored and programming is continued. Any invalid
op−code will be ignored and the serial output pin (SO) will
remain in the high impedance state.
The HOLD input can be used to pause communication
between host and CAT25256. To pause, HOLD must be
taken low while SCK is low (Figure 11). During the hold
condition the device must remain selected (CS low). During
the pause, the data output pin (SO) is tri−stated (high
impedance) and SI transitions are ignored. To resume
communication, HOLD must be taken high while SCK is low.
Design Considerations
The CAT25256 device incorporates Power−On Reset
(POR) circuitry which protects the internal logic against
powering up in the wrong state. The device will power up
into Standby mode after VCC exceeds the POR trigger level
and will power down into Reset mode when VCC drops
CS
tCD
tCD
SCK
tHD
tHD
HOLD
tHZ
HIGH IMPEDANCE
SO
tLZ
Dashed Line = mode (1, 1)
Figure 11. HOLD Timing
http://onsemi.com
12
CAT25256
PACKAGE DIMENSIONS
PDIP−8, 300 mils
CASE 646AA−01
ISSUE A
SYMBOL
MIN
NOM
A
E1
5.33
A1
0.38
A2
2.92
3.30
4.95
b
0.36
0.46
0.56
b2
1.14
1.52
1.78
c
0.20
0.25
0.36
D
9.02
9.27
10.16
E
7.62
7.87
8.25
E1
6.10
6.35
7.11
e
PIN # 1
IDENTIFICATION
MAX
2.54 BSC
eB
7.87
L
2.92
10.92
3.30
3.80
D
TOP VIEW
E
A2
A
A1
c
b2
L
e
eB
b
SIDE VIEW
END VIEW
Notes:
(1) All dimensions are in millimeters.
(2) Complies with JEDEC MS-001.
http://onsemi.com
13
CAT25256
PACKAGE DIMENSIONS
SOIC−8, 208 mils
CASE 751BE−01
ISSUE O
SYMBOL
MIN
NOM
2.03
A
E1 E
MAX
A1
0.05
0.25
b
0.36
0.48
c
0.19
0.25
D
5.13
5.33
E
7.75
8.26
E1
5.13
5.38
1.27 BSC
e
L
0.51
0.76
θ
0º
8º
PIN#1 IDENTIFICATION
TOP VIEW
D
A
e
b
q
L
A1
SIDE VIEW
c
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with EIAJ EDR-7320.
http://onsemi.com
14
CAT25256
PACKAGE DIMENSIONS
SOIC 8, 150 mils
CASE 751BD−01
ISSUE O
E1
E
SYMBOL
MIN
A
1.35
1.75
A1
0.10
0.25
b
0.33
0.51
c
0.19
0.25
D
4.80
5.00
E
5.80
6.20
E1
3.80
MAX
4.00
1.27 BSC
e
PIN # 1
IDENTIFICATION
NOM
h
0.25
0.50
L
0.40
1.27
θ
0º
8º
TOP VIEW
D
h
A1
θ
A
c
e
b
L
SIDE VIEW
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MS-012.
http://onsemi.com
15
CAT25256
PACKAGE DIMENSIONS
SOIC−8, 208 mils
CASE 751BE−01
ISSUE O
SYMBOL
MIN
NOM
2.03
A
E1 E
MAX
A1
0.05
0.25
b
0.36
0.48
c
0.19
0.25
D
5.13
5.33
E
7.75
8.26
E1
5.13
5.38
1.27 BSC
e
L
0.51
0.76
θ
0º
8º
PIN#1 IDENTIFICATION
TOP VIEW
D
A
e
b
q
L
A1
SIDE VIEW
c
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with EIAJ EDR-7320.
http://onsemi.com
16
CAT25256
PACKAGE DIMENSIONS
TSSOP8, 4.4x3
CASE 948AL−01
ISSUE O
b
SYMBOL
MIN
NOM
A
E1
E
MAX
1.20
A1
0.05
A2
0.80
b
0.19
0.15
0.90
1.05
0.30
c
0.09
D
2.90
3.00
3.10
E
6.30
6.40
6.50
E1
4.30
4.40
4.50
e
0.20
0.65 BSC
L
1.00 REF
L1
0.50
θ
0º
0.60
0.75
8º
e
TOP VIEW
D
A2
c
q1
A
A1
L1
SIDE VIEW
L
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-153.
http://onsemi.com
17
CAT25256
PACKAGE DIMENSIONS
TDFN8, 3x4.9
CASE 511AM−01
ISSUE A
D
A
DETAIL A
DAP SIZE
2.6 x 3.3mm
E
E2
PIN #1
IDENTIFICATION
A1
PIN #1 IDENTIFICATION
D2
TOP VIEW
SIDE VIEW
SYMBOL
MIN
NOM
MAX
A
0.70
0.75
0.80
A1
0.00
0.02
0.05
A2
0.45
0.55
0.65
A3
A2
A
A1
b
0.25
0.30
0.35
2.90
3.00
3.10
D2
0.90
1.00
1.10
E
4.80
4.90
5.00
E2
0.90
1.00
1.10
e
b
L
0.65 TYP
0.50
0.60
A3
FRONT VIEW
0.20 REF
D
L
BOTTOM VIEW
e
0.70
DETAIL A
Notes:
(1) All dimensions are in millimeters.
(2) Complies with JEDEC MO-229.
http://onsemi.com
18
CAT25256
PACKAGE DIMENSIONS
UDFN8, 2x3 EXTENDED PAD
CASE 517AZ−01
ISSUE O
D
b
A
e
L
DAP SIZE 1.8 x 1.8
E2
E
PIN #1
IDENTIFICATION
A1
PIN #1 INDEX AREA
D2
TOP VIEW
SIDE VIEW
SYMBOL
MIN
NOM
MAX
A
0.45
0.50
0.55
A1
0.00
0.02
0.05
A3
b
0.127 REF
0.20
0.25
0.30
D
1.95
2.00
2.05
D2
1.35
1.40
1.45
E
2.95
3.00
3.05
E2
1.25
1.30
1.35
e
L
BOTTOM VIEW
DETAIL A
0.065 REF
A3 A
FRONT VIEW
0.50 REF
0.25
0.30
0.35
A3
Notes:
(1) All dimensions are in millimeters.
(2) Refer JEDEC MO-236/MO-252.
0.0 - 0.05
DETAIL A
http://onsemi.com
19
0.065 REF
Copper Exposed
CAT25256
ORDERING INFORMATION (Notes 15 − 18)
Specific
Device
Marking*
Package
Type
CAT25256LI−G
25256E
CAT25256VI−G
Device Order Number
Temperature Range
Lead Finish
Shipping (Note 19)
PDIP−8
Industrial
(−40°C to +85°C)
NiPdAu
Tube, 50 Units / Tube
25256E
SOIC−8
Industrial
(−40°C to +85°C)
NiPdAu
Tube, 100 Units / Tube
CAT25256VI−GT3
25256E
SOIC−8
Industrial
(−40°C to +85°C)
NiPdAu
Tape & Reel, 3,000 Units / Reel
CAT25256VE−GT3
25256E
SOIC−8
Extended
(−40°C to +125°C)
NiPdAu
Tape & Reel, 3,000 Units / Reel
CAT25256XI−T2
25256E
SOIC−8
Industrial
(−40°C to +85°C)
Matte−Tin
Tape & Reel, 2,000 Units / Reel
CAT25256XE−T2
25256E
SOIC−8
Extended
(−40°C to +125°C)
Matte−Tin
Tape & Reel, 2,000 Units / Reel
CAT25256YI−G
S56E
TSSOP−8
Industrial
(−40°C to +85°C)
NiPdAu
Tube, 100 Units / Tube
CAT25256YI−GT3
S56E
TSSOP−8
Industrial
(−40°C to +85°C)
NiPdAu
Tape & Reel, 3,000 Units / Reel
CAT25256YE−GT3
S56E
TSSOP−8
Extended
(−40°C to +125°C)
NiPdAu
Tape & Reel, 3,000 Units / Reel
CAT25256ZD2I−GT2
(Note 19)
CCHM
TDFN−8
Industrial
(−40°C to +85°C)
NiPdAu
Tape & Reel, 2,000 Units / Reel
CAT25256HU4I−GT3
S8U
UDFN8−EP
Industrial
(−40°C to +85°C)
NiPdAu
Tape & Reel, 3,000 Units / Reel
CAT25256HU4E−GT3
S8U
UDFN8−EP
Extended
(−40°C to +125°C)
NiPdAu
Tape & Reel, 3,000 Units / Reel
*Marking for New Product (Rev E)
15. All packages are RoHS−compliant (Lead−free, Halogen−free).
16. The standard lead finish is NiPdAu.
17. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON Semiconductor Device
Nomenclature document, TND310/D, available at www.onsemi.com
18. For additional package and temperature options, please contact your nearest ON Semiconductor Sales office.
19. The TDFN 3x4.9 (ZD2) package is not recommended for new design. Not available for New Product (Rev E).
20. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
20
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
CAT25256/D