Infineon AUIRLL014N Automotive grade Datasheet

AUTOMOTIVE GRADE
AUIRLL014N
HEXFET® Power MOSFET
Features
 Advanced Planar Technology
 Low On-Resistance
 Logic Level Gate Drive
 Dynamic dv/dt Rating
 150°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
VDSS
55V
RDS(on) max.
ID
0.14
2.0A
D
S
D
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications
Base part number
Package Type
AUIRLL014N
SOT-223
G
SOT-223
AUIRLL014N
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tape and Reel
2500
S
Source
Orderable Part Number
AUIRLL014NTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V 
2.8
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V 
Continuous Drain Current, VGS @ 10V 
Pulsed Drain Current 
Maximum Power Dissipation (PCB Mount) 
2.0
1.6
16
2.1
PD @TA = 25°C
Maximum Power Dissipation (PCB Mount) 
Linear Derating Factor (PCB Mount) 
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt 
Operating Junction and
Storage Temperature Range
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Thermal Resistance
Symbol
RJA
RJA
Parameter
Junction-to-Ambient (PCB Mount, steady state) 
Junction-to-Ambient (PCB Mount, steady state) 
Units
A
1.0
8.3
± 16
32
2.0
0.1
7.2
-55 to + 150
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Typ.
Max.
Units
90
50
120
60
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRLL014N
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
55
––– –––
V VGS = 0V, ID = 250µA
––– 0.015 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.14
VGS = 10V, ID = 2.0A 
––– ––– 0.20
 VGS = 5.0V, ID = 1.2A 
––– ––– 0.28
VGS = 4.0V, ID = 1.0A 
1.0
–––
2.0
V VDS = VGS, ID = 250µA
2.3
––– –––
S VDS = 25V, ID = 1.0A
––– –––
25
VDS = 55V, VGS = 0V
µA
––– ––– 250
VDS = 44V,VGS = 0V,TJ = 150°C
––– ––– 100
VGS = 16V
nA
––– ––– -100
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Total Gate Charge
Qg
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Qrr
ton
Forward Turn-On Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.5
1.1
3.0
5.1
4.9
14
2.9
230
66
30
14
1.7
4.4
–––
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
1.3
–––
–––
16
–––
–––
–––
–––
41
73
1.0
61
110
ID = 2.0A
nC VDS = 44V
VGS = 10V, See Fig 6 and 9 
VDD = 28V
ID = 2.0A
ns
RG = 6.0
RD = 14See Fig. 10 
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig.5
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 2.0A,VGS = 0V 
ns TJ = 25°C ,IF = 2.0A,
nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
 VDD = 25V, starting TJ = 25°C, L = 4.0mH, RG = 25, IAS = 4.0A. (See fig. 12)
ISD 2.0A, di/dt 170A/µs, VDD V(BR)DSS, TJ  150°C.
 Pulse width 300µs; duty cycle  2%.
 When mounted on FR-4 board using minimum recommended footprint.
When mounted on 1 inch square copper board, for comparison with other SMD devices.
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AUIRLL014N
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
1
0.1
20µs PULSE WIDTH
TJ = 25°C
A
1
10
10
3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
0.1
100
1
V DS , Drain-to-Source Voltage (V)
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
VDS = 25V
20µs PULSE WIDTH
1
3.0
4.0
5.0
6.0
A
7.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
100
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
10
10
V DS, Drain-to-Source Voltage (V)
I D = 2.0A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
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AUIRLL014N
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = Cds + C gd
V GS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
400
Ciss
300
200
Coss
100
Crss
0
1
10
100
I D = 2.0A
V DS = 44V
V DS = 28V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
VDS , Drain-to-Source Voltage (V)
6
9
12
A
15
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
3
10
TJ = 150°C
TJ = 25°C
1
10µs
10
100µs
1ms
1
10ms
VGS = 0V
0.1
0.4
4
0.6
0.8
1.0
1.2
1.4
A
1.6
TA = 25°C
TJ = 150°C
Single Pulse
0.1
1
A
10
100
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
2015-10-29
AUIRLL014N
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (ZthJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
t
1
t2
0.01
1
Notes:
1. Duty factor D = t
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
1
/t
2
2. Peak TJ = PDM x Z thJA + T A
0.01
0.1
1
10
100
A
1000
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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AUIRLL014N
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
EAS , Single Pulse Avalanche Energy (mJ)
80
TOP
BOTTOM
ID
1.8A
3.2A
4.0A
60
40
20
0
VDD = 25V
25
50
75
100
125
A
150
Starting TJ , Junction Temperature (°C)
Fig 12a. Unclamped Inductive Test Circuit
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
V(BR)DSS
tp
I AS
Fig 12b. Unclamped Inductive Waveforms
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Fig 13. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
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AUIRLL014N
SOT-223 (TO-261AA) Package Outline (Dimensions are shown in millimeters (inches)
SOT-223(TO-261AA) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLL014N
SOT-223(TO-261AA) Tape and Reel (Dimensions are shown in millimeters (inches)
2.05 (.080)
1.95 (.077)
TR
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
12.10 (.475)
11.90 (.469)
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLL014N
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
SOT-223
MSL1
Class M1A (+/- 50V)†
AEC-Q101-002
Class H0 (+/- 250V)†
AEC-Q101-001
Class C5 (+/- 1125V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
3/25/2014
10/29/2015
Comments





Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated part marking on page 8
Updated data sheet with new IR corporate template
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
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(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
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liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
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In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
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the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
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completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
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please contact your nearest Infineon Technologies office.
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