HP ATF-531P8-BLK High linearity enhancement mode pseudomorphic hemt in 2x2 mm lpcc package Datasheet

Agilent ATF-531P8 High Linearity
Enhancement Mode [1]
Pseudomorphic HEMT in
2x2 mm2 LPCC [3] Package
Data Sheet
Features
• Single voltage operation
• High linearity and gain
• Low noise figure
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Source
(Thermal/RF Gnd)
Description
Agilent Technologies’s
ATF-531P8 is a single-voltage
high linearity, low noise
E-pHEMT housed in an 8-lead
JEDEC-standard leadless
plastic chip carrier (LPCC [3])
package. The device is ideal as
a high linearity, low-noise,
medium-power amplifier. Its
operating frequency range is
from 50 MHz to 6 GHz.
Pin Connections and
Package Marking
Note:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin 2 (Gate)
• Small package size:
2.0 x 2.0 x 0.75 mm
Pin 3
• Point MTTF > 300 years [2]
Pin 4 (Source)
• MSL-1 and lead-free
Pin 1 (Source)
• Tape-and-reel packaging option
available
Bottom View
Pin 8
Pin 1 (Source)
The thermally efficient package
measures only 2 mm x 2 mm x
0.75 mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85°C. All
devices are 100% RF & DC tested.
• Excellent uniformity in product
specifications
Pin 2 (Gate)
Pin 3
3Px
Pin 4 (Source)
Pin 7 (Drain)
Specifications
2 GHz; 4V, 135 mA (Typ.)
Pin 6
• 38 dBm output IP3
Pin 5
• 0.6 dB noise figure
Top View
Note:
Package marking provides orientation and
identification:
“3P” = Device Code
“x” = Date code indicates the month of
manufacture.
• 20 dB gain
• 10.7 dB LFOM [4]
• 24.5 dBm output power at 1 dB gain
compression
Applications
• Front-end LNA Q1 and Q2 driver or
pre-driver amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
• Driver amplifier for WLAN,
WLL/RLL and MMDS applications
• General purpose discrete E-pHEMT
for other high linearity applications
ATF-531P8 Absolute Maximum Ratings[1]
Symbol
Parameter
Units
Absolute
Maximum
VDS
Drain–Source Voltage[2]
V
7
VGS
Gate–Source Voltage[2]
V
-5 to 1
VGD
Gate Drain Voltage[2]
V
-5 to 1
IDS
Drain Current[2]
mA
300
IGS
Gate Current
mA
20
Pdiss
Total Power Dissipation[3]
W
1
Pin max.
RF Input Power
dBm
+24
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
θch_b
Thermal Resistance[4]
°C/W
63
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is 25°C.
Derate 16 mW/°C for TB > 87°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. Device can safely handle +24 dBm RF Input
Power provided IGS is limited to 20mA. IGS
at P1dB drive level is bias circuit dependent.
Product Consistency Distribution Charts at 2 GHz, 4V, 135 mA [5,6]
160
180
400
0.9 V
Cpk = 1.2
Stdev = 0.71
Cpk = 1.0
Stdev = 0.14
150
120
300
IDS (mA)
0.8 V
200
0.7 V
100
0.6 V
120
+3 Std
-3 Std
90
+3 Std
-3 Std
80
60
40
30
0.5 V
0
0
0
1
2
3
4
5
6
7
0
0
1.2
300
250
Stdev = 0.12
200
200
160
+3 Std
-3 Std
120
100
80
50
40
19.5
20.5
21.5
0
24.2
24.4
GAIN (dB)
Figure 4. Small Signal Gain
LSL = 18.5, Nominal = 20.2 dB, USL = 21.5.
+3 Std
-3 Std
24.6
24.8
25
25.2
P1dB (dBm)
Figure 5. P1dB
Nominal = 24.6.
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers and 3 different lots.
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.
2
36
37
38
Figure 3. OIP3
LSL = 35.5, Nominal = 38.1.
240
Cpk = 2.0
Stdev = 0.21
35
OIP3 (dBm)
Figure 2. NF
Nominal = 0.6, USL = 1.0.
Figure 1. Typical I-V Curves
(Vgs = 0.1 per step).
0
18.5
0.9
NF (dB)
VDS (V)
150
0.6
0.3
39
40
41
ATF-531P8 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4V and Ids = 135 mA unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 4V, Ids = 135 mA
V
—
0.68
—
Vth
Threshold Voltage
Vds = 4V, Ids = 8 mA
V
—
0.3
—
Idss
Saturated Drain Current
Vds = 4V, Vgs = 0V
µA
—
3.7
—
Gm
Transconductance
Vds = 4.5V, Gm = ∆Idss/∆Vgs;
?Vgs = Vgs1 - Vgs2
Vgs1 = 0.6V, Vgs2 = 0.55V
mmho
—
650
—
Igss
Gate Leakage Current
Vds = 0V, Vgs = -4V
µA
-10
-0.34
—
NF
Noise Figure[1]
f = 2 GHz
f = 900 MHz
dB
dB
—
—
0.6
0.6
1
—
G
Gain[1]
f = 2 GHz
f = 900 MHz
dB
dB
18.5
—
20
25
21.5
—
OIP3
Output 3rd Order
Intercept Point[1,2]
f = 2 GHz
f = 900 MHz
dBm
dBm
35.5
—
38
37
—
—
P1dB
Output 1dB
Compressed[1]
f = 2 GHz
f = 900 MHz
dBm
dBm
—
—
24.5
23
—
—
PAE
Power Added Efficiency
f = 2 GHz
f = 900 MHz
%
%
—
—
57
45
—
—
ACLR
Adjacent Channel Leakage
Power Ratio[1,3]
Offset BW = 5 MHz
Offset BW = 10 MHz
dBc
dBc
—
—
-68
-64
—
—
Notes:
1. Measurements obtained using production test board described in Figure 6.
2. F1 = 2.00 GHz, F2 = 2.01 GHz and Pin = -10 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
– Test Model 1
– Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
– Freq = 2140 MHz
– Pin = -5 dBm
– Chan Integ Bw = 3.84 MHz
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.66
Γ_ang = -165°
(1.8 dB loss)
DUT
Output
Matching Circuit
Γ_mag = 0.09
Γ_ang = 118°
(1.1 dB loss)
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Output
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a
trade-off between optimal OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.
3
2.2 pF
50 Ohm
.02 λ
3.3 pF
RF Input
110 Ohm
.03 λ
110 Ohm
.03 λ
50 Ohm
.02 λ
4.7 pF
RF Output
DUT
22 nH
12 nH
15 Ohm
2.2 µF
Drain
DC Supply
100 pF
Gate
DC Supply
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in
gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 Tuning Conditions
The device’s optimum OIP3 measurements were determined using a Maury load pull system at 4V, 135 mA
quiesent bias. The gamma load and source over frequency are shown in the table below:
Freq
(GHz)
Gamma Source
Mag
Ang
Gamma Load
Mag
Ang
OIP3
(dBm)
Gain
(dB)
P1dB
(dBm)
PAE
(%)
0.9
0.616
-37.1
0.249
130.0
40.3
16.5
23.4
43.2
2.0
0.310
34.5
0.285
168.3
41.5
13.4
24.8
51.9
3.9
0.421
167.5
0.437
-161.6
41.5
10.5
24.7
42.8
5.8
0.402
-162.8
0.418
-134.1
41.0
7.9
24.7
36.6
4
45
45
40
40
40
35
30
3V
4V
5V
25
OIP3 (dBm)
45
OIP3 (dBm)
OIP3 (dBm)
ATF-531P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3
35
30
3V
4V
5V
25
75
90
105
120
135
150
90
105
135
150
165 180
75
17
12
16
16
10
15
15
13
12
14
13
3V
4V
5V
3V
4V
5V
11
10
120
135
150
165 180
90
105
120
135
150
165 180
Figure 12. Small Signal Gain vs. Ids and Vds
at 2 GHz.
25
25
P1dB (dBM)
25
P1dB (dBM)
30
20
15
3V
4V
5V
105
120
135
105
150
165 180
Idq (mA)
Figure 14. P1dB vs. Idq and Vds at 900 MHz.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive. The
objective of load pull is to optimize OIP3 and
therefore may trade-off Small Signal Gain, P1dB
and VSWR.
75
90
105
120
135
120
135
150
165
180
150
20
15
3V
4V
5V
10
10
90
90
Figure 13. Small Signal Gain vs. Ids and Vds
at 3.9 GHz.
30
75
75
Ids (mA)
30
15
180
3V
4V
5V
Ids (mA)
20
165
6
0
75
Ids (mA)
Figure 11. Small Signal Gain vs. Ids and Vds
at 900 MHz.
150
2
10
105
135
4
12
11
120
8
GAIN (dB)
14
90
105
Figure 10. OIP3 vs. Ids and Vds at 3.9 GHz.
17
75
90
Ids (mA)
Figure 9. OIP3 vs. Ids and Vds at 2 GHz.
GAIN (dB)
GAIN (dB)
Figure 8. OIP3 vs. Ids and Vds at 900 MHz.
P1dB (dBM)
120
Ids (mA)
Ids (mA)
5
3V
4V
5V
20
75
165 180
30
25
20
20
35
165 180
Idq (mA)
Figure 15. P1dB vs. Idq and Vds at 2 GHz.
3V
4V
5V
10
75
90
105
120
135
150
165
180
Idq (mA)
Figure 16. P1dB vs. Idq and Vds at 3.9 GHz.
60
60
50
50
50
40
40
40
30
20
30
20
3V
4V
5V
10
0
PAE (%)
60
PAE (%)
PAE (%)
ATF-531P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)
Tuned for Optimal OIP3
75
90
105
120
135
20
3V
4V
5V
10
150
165
0
180
75
90
105
Idq (mA)
165
0
180
30
3V
4V
5V
105
120
135
150
165
180
Ids (mA)
60
50
40
30
20
3V
4V
5V
10
90
105
120
135
105
150
165
180
Idq (mA)
Figure 23. PAE vs. Idq and Vds at 5.8 GHz.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive. The
objective of load pull is to optimize OIP3 and
therefore may trade-off Small Signal Gain, P1dB
and VSWR.
120
135
150
165
180
Figure 19. PAE vs. Idq and Vds at 3.9 GHz.
10
25
8
6
20
4
0
15
3V
4V
5V
75
90
105
120
135
150
165
180
Ids (mA)
Figure 20. OIP3 vs. Ids and Vds at 5.8 GHz.
75
90
30
2
20
90
75
Idq (mA)
P1dB (dBm)
SMALL SIGNAL GAIN (dB)
OIP3 (dBm)
35
25
PAE (%)
150
12
40
6
135
Figure 18. PAE vs. Idq and Vds at 2 GHz.
45
0
120
3V
4V
5V
10
Idq (mA)
Figure 17. PAE vs. Idq and Vds at 900 MHz.
75
30
Figure 21. Small Signal Gain vs. Ids and Vds
at 5.8 GHz.
10
3V
4V
5V
75
90
105
120
135
150
165
180
Idq (mA)
Figure 22. P1dB vs. Idq and Vds at 5.8 GHz.
ATF-531P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3, continued
GAIN (dB)
OIP3 (dBm)
40
35
30
20
0.5
1.5
2.5
3.5
4.5
5.5
FREQUENCY (GHz)
80
70
60
PAE (%)
50
40
30
20
-40°C
25°C
85°C
10
1.5
2.5
3.5
4.5
5.5
FREQUENCY (GHz)
Figure 27. PAE vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive. The
objective of load pull is to optimize OIP3 and
therefore may trade-off Small Signal Gain, P1dB
and VSWR.
7
15
25
10
0
0.5
1.5
2.5
3.5
4.5
20
15
-40°C
25°C
85°C
5.5
FREQUENCY (GHz)
Figure 24. OIP3 vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
0
0.5
30
5
-40°C
25°C
85°C
25
20
P1dB (dBm)
45
Figure 25. Small Signal Gain vs. Temp and
Freq. (Tuned for optimal OIP3 at 4V, 135 mA)
10
0.5
-40°C
25°C
85°C
1.5
2.5
3.5
4.5
5.5
FREQUENCY (GHz)
Figure 26. P1dB vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
ATF-531P8 Typical Scattering Parameters at 25°C, VDS = 4V, IDS = 180 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
S22
Mag. Ang.
MSG/MAG
dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
1.9
2
2.4
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.626
0.704
0.761
0.794
0.815
0.824
0.834
0.840
0.845
0.848
0.854
0.857
0.853
0.853
0.855
0.858
0.864
0.871
0.869
0.880
0.883
0.884
0.874
0.874
0.877
0.884
0.894
0.896
0.898
0.918
-59.4
-97.4
-119.4
-133.8
-142.5
-149.6
-155.1
-159.7
-163.3
-166.4
-177.7
175.9
174.4
168.9
161.6
150.8
140.7
131.7
123.5
115.2
106.8
95.7
85.1
74.1
63.3
57.9
46.8
43.3
31.9
20.8
33.20
31.41
29.53
27.78
26.32
24.99
23.82
22.76
21.83
20.96
17.59
15.60
15.36
13.79
11.83
9.27
7.20
5.48
4.04
2.73
1.77
0.70
-0.34
-1.39
-2.52
-3.64
-4.81
-5.66
-7.25
-8.61
45.702
37.192
29.950
24.477
20.693
17.760
15.516
13.742
12.346
11.164
7.579
6.024
5.863
4.894
3.902
2.906
2.292
1.879
1.593
1.370
1.226
1.084
0.962
0.852
0.748
0.658
0.575
0.521
0.434
0.371
154.5
135.8
123.5
114.8
108.9
103.9
99.9
96.6
93.6
91.0
80.6
73.9
72.6
66.5
57.9
44.6
31.6
19.4
7.5
-4.3
-16.1
-29.0
-41.6
-52.8
-64.5
-74.6
-85.4
-93.6
-102.6
-110.5
-40.00
-35.92
-34.42
-33.56
-32.77
-32.77
-32.40
-32.40
-32.04
-32.04
-31.37
-30.75
-30.46
-29.90
-29.12
-27.74
-26.56
-25.35
-24.29
-23.35
-22.27
-21.41
-20.63
-19.91
-19.49
-19.02
-18.71
-18.49
-18.49
-18.94
0.010
0.016
0.019
0.021
0.023
0.023
0.024
0.024
0.025
0.025
0.027
0.029
0.030
0.032
0.035
0.041
0.047
0.054
0.061
0.068
0.077
0.085
0.093
0.101
0.106
0.112
0.116
0.119
0.119
0.113
62.6
48.8
39.1
33.7
30.0
27.4
25.8
24.6
24.2
23.8
23.5
24.4
24.9
25.8
26.6
26.5
24.3
21.2
17.4
12.6
7.0
-0.8
-8.8
-16.6
-24.6
-31.9
-39.8
-47.8
-55.1
-62.6
0.410
0.384
0.370
0.360
0.355
0.351
0.349
0.349
0.349
0.347
0.344
0.344
0.335
0.339
0.337
0.356
0.378
0.402
0.427
0.449
0.465
0.489
0.505
0.544
0.596
0.638
0.662
0.699
0.748
0.718
36.60
33.66
31.98
30.67
29.54
28.88
28.11
27.58
26.94
26.50
24.48
23.17
22.91
21.85
19.60
16.23
14.19
12.69
11.18
10.39
9.70
8.70
7.20
6.30
5.46
4.95
4.29
4.06
2.82
1.75
-44.4
-79.2
-101.8
-117.6
-127.1
-135.5
-141.9
-146.9
-151.1
-154.3
-165.8
-171.2
-171.8
-176.8
177.0
168.5
160.6
152.4
144.6
136.1
127.4
116.6
106.0
97.2
85.9
74.7
65.9
56.1
47.7
39.3
Typical Noise Parameters at 25°C, VDS = 4V, IDS = 180 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
0.5
0.9
1
1.5
2
2.4
3
3.5
3.9
5
5.8
6
7
8
9
10
0.50
0.59
0.60
0.72
0.81
0.90
1.01
1.10
1.13
1.34
1.48
1.58
1.68
1.89
2.15
2.34
0.20
0.25
0.35
0.40
0.57
0.61
0.63
0.67
0.70
0.72
0.75
0.76
0.80
0.84
0.82
0.85
166.00
169.00
171.00
173.00
-173.50
-167.70
-163.50
-158.20
-153.90
-142.70
-135.40
-133.30
-125.00
-116.10
-106.90
-95.10
0.041
0.044
0.036
0.039
0.029
0.033
0.041
0.054
0.068
0.139
0.229
0.278
0.470
0.860
1.170
2.010
Ga
dB
28.26
24.27
24.15
21.14
20.07
18.73
16.91
15.86
15.12
13.08
12.04
11.82
10.69
9.97
8.96
8.09
40
MSG/MAG & |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
10
S21
0
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 28. MSG/MAG & |S21|2 (dB)
@ 4V, 180 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
8
ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 135 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
S22
Mag. Ang.
MSG/MAG
dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
1.9
2
2.4
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.812
0.820
0.834
0.842
0.846
0.849
0.853
0.853
0.855
0.857
0.857
0.857
0.853
0.852
0.853
0.857
0.861
0.866
0.867
0.875
0.877
0.884
0.889
0.872
0.878
0.886
0.902
0.902
0.895
0.932
-56.4
-94.6
-117.3
-132.4
-141.4
-148.7
-154.4
-159.0
-162.7
-166.0
-177.3
176.2
174.7
169.2
161.7
150.8
140.9
131.6
123.5
115.1
106.9
95.6
85.3
73.9
63.6
57.6
47.2
43.7
32.1
20.6
34.07
31.95
29.87
27.99
26.46
25.08
23.88
22.80
21.85
20.97
17.58
15.57
15.34
13.77
11.80
9.24
7.18
5.45
4.02
2.72
1.76
0.71
-0.34
-1.33
-2.48
-3.57
-4.66
-5.56
-6.99
-8.75
50.547
39.582
31.147
25.104
21.036
17.954
15.628
13.809
12.376
11.186
7.568
6.007
5.847
4.879
3.889
2.896
2.285
1.873
1.589
1.367
1.224
1.085
0.962
0.858
0.752
0.663
0.585
0.527
0.447
0.365
151.8
132.2
120.2
111.8
106.3
101.6
97.9
94.8
92.0
89.6
79.7
73.3
72.0
66.0
57.6
44.6
31.8
19.7
7.9
-3.8
-15.3
-28.2
-41.0
-51.7
-64.0
-73.7
-84.8
-91.3
-101.9
-109.6
-38.42
-34.89
-33.15
-32.40
-32.04
-31.70
-31.70
-31.37
-31.37
-31.37
-30.75
-30.17
-29.90
-29.37
-28.64
-27.54
-26.38
-25.19
-24.29
-23.22
-22.16
-21.31
-20.63
-19.91
-19.58
-19.02
-18.79
-18.49
-18.49
-18.94
0.012
0.018
0.022
0.024
0.025
0.026
0.026
0.027
0.027
0.027
0.029
0.031
0.032
0.034
0.037
0.042
0.048
0.055
0.061
0.069
0.078
0.086
0.093
0.101
0.105
0.112
0.115
0.119
0.119
0.113
62.6
45.8
36.5
30.5
27.0
24.8
23.2
22.4
21.7
21.2
21.4
21.7
22.5
23.0
24.1
23.9
22.2
18.6
15.1
10.4
4.8
-2.6
-10.7
-18.3
-26.2
-33.3
-42.0
-49.2
-56.7
-63.9
0.449
0.425
0.397
0.385
0.379
0.375
0.372
0.372
0.371
0.369
0.366
0.366
0.347
0.351
0.358
0.375
0.396
0.417
0.440
0.459
0.474
0.496
0.511
0.548
0.600
0.640
0.663
0.698
0.746
0.716
36.25
33.42
31.51
30.20
29.25
28.39
27.79
27.09
26.61
26.17
24.17
22.87
22.62
21.57
20.22
16.28
14.11
12.50
11.10
10.16
9.40
8.69
7.93
6.24
5.55
5.05
4.93
4.37
2.93
2.36
-49.1
-85.0
-108.1
-123.7
-132.5
-140.4
-146.4
-151.0
-154.9
-157.9
-168.7
-174.2
-174.8
-179.7
174.2
165.7
157.8
149.6
141.8
133.4
124.8
114.1
103.7
95.1
84.0
73.1
64.4
54.7
46.5
38.2
Typical Noise Parameters, VDS = 4V, IDS = 135 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
0.5
0.9
1
1.5
2
2.4
3
3.5
3.9
5
5.8
6
7
8
9
10
0.18
0.26
0.35
0.40
0.51
0.56
0.60
0.73
0.83
1.03
1.15
1.20
1.34
1.57
1.78
1.83
0.20
0.25
0.35
0.40
0.47
0.51
0.56
0.60
0.66
0.68
0.72
0.72
0.78
0.83
0.82
0.85
166.00
169.00
171.00
173.00
177.20
-174.50
-169.30
-162.90
-157.60
-145.50
-137.10
-135.20
-126.70
-117.00
-107.90
-95.70
0.014
0.018
0.021
0.021
0.022
0.022
0.023
0.030
0.040
0.085
0.140
0.160
0.300
0.630
0.880
1.460
Ga
dB
28.57
24.42
24.32
21.25
19.35
17.66
16.37
15.09
14.82
12.76
11.55
11.31
10.55
9.81
8.86
8.17
40
MSG/MAG & |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
10
S21
0
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 29. MSG/MAG & |S21|2 (dB)
@ 4V, 135 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
9
ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 75 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
S22
Mag. Ang.
MSG/MAG
dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
1.9
2
2.4
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.930
0.889
0.876
0.867
0.862
0.858
0.857
0.856
0.854
0.857
0.853
0.853
0.848
0.846
0.848
0.850
0.853
0.861
0.861
0.868
0.873
0.875
0.881
0.871
0.873
0.885
0.891
0.912
0.895
0.933
-51.3
-88.3
-111.6
-127.3
-137.0
-144.7
-151.0
-156.0
-160.0
-163.5
-175.7
177.6
176.2
170.3
162.4
151.6
141.4
132.3
123.8
115.6
107.1
95.8
85.6
74.2
63.7
57.0
47.0
43.7
32.2
21.2
33.70
31.65
29.58
27.71
26.18
24.81
23.62
22.54
21.59
20.72
17.33
15.33
15.09
13.52
11.55
8.98
6.93
5.22
3.78
2.50
1.51
0.50
-0.57
-1.56
-2.65
-3.80
-4.72
-5.76
-7.15
-8.66
48.399
38.230
30.121
24.294
20.379
17.405
15.165
13.404
12.005
10.859
7.351
5.839
5.681
4.742
3.780
2.813
2.220
1.824
1.546
1.334
1.190
1.059
0.937
0.836
0.737
0.646
0.581
0.515
0.439
0.369
152.3
132.6
120.6
112.2
106.6
101.9
98.2
95.0
92.2
89.8
79.8
73.3
72.0
66.0
57.5
44.3
31.5
19.4
7.5
-4.3
-15.9
-28.8
-41.2
-52.5
-63.9
-74.0
-85.2
-93.5
-102.3
-110.5
-37.08
-32.77
-31.37
-30.75
-30.46
-30.17
-29.90
-29.90
-29.63
-29.63
-29.12
-28.87
-28.64
-28.18
-27.74
-26.94
-25.85
-25.04
-24.01
-23.22
-22.16
-21.41
-20.63
-20.00
-19.66
-19.17
-18.79
-18.56
-18.49
-19.02
0.014
0.023
0.027
0.029
0.030
0.031
0.032
0.032
0.033
0.033
0.035
0.036
0.037
0.039
0.041
0.045
0.051
0.056
0.063
0.069
0.078
0.085
0.093
0.100
0.104
0.110
0.115
0.118
0.119
0.112
63.6
46.8
36.1
29.5
25.9
23.1
21.1
19.9
18.3
18.2
16.3
16.5
16.7
17.0
17.0
16.7
15.4
12.9
9.8
5.5
0.4
-6.6
-13.8
-21.4
-28.8
-36.3
-43.7
-51.7
-58.5
-65.8
0.524
0.467
0.436
0.415
0.405
0.397
0.392
0.390
0.387
0.384
0.380
0.379
0.360
0.363
0.369
0.385
0.405
0.426
0.447
0.467
0.481
0.501
0.515
0.553
0.604
0.644
0.666
0.700
0.748
0.718
35.39
32.21
30.48
29.23
28.32
27.49
26.76
26.22
25.61
25.17
23.22
22.10
21.86
20.85
19.65
16.29
13.90
12.31
10.85
9.85
9.15
8.19
7.40
6.12
5.28
4.89
4.38
5.43
2.90
2.74
-45.7
-80.7
-103.2
-119.1
-128.4
-136.8
-143.2
-148.2
-152.3
-155.6
-167.2
-173.2
-173.8
-179.0
174.6
165.7
157.5
149.2
141.3
132.8
124.1
113.3
102.9
94.5
83.4
72.5
63.7
54.2
46.0
37.8
Typical Noise Parameters, VDS = 4V, IDS = 75 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
0.5
0.9
1
1.5
2
2.4
3
3.5
3.9
5
5.8
6
7
8
9
10
0.15
0.20
0.22
0.30
0.36
0.44
0.50
0.55
0.63
0.80
0.90
0.91
1.14
1.24
1.49
1.61
0.10
0.15
0.20
0.30
0.35
0.43
0.47
0.58
0.60
0.67
0.72
0.72
0.71
0.74
0.74
0.76
130.00
135.00
143.00
148.00
154.10
168.70
179.30
-170.80
-164.80
-150.90
-140.80
-139.50
-129.10
-119.90
-109.70
-97.30
0.016
0.019
0.019
0.022
0.024
0.022
0.022
0.019
0.024
0.050
0.095
0.100
0.180
0.285
0.460
0.720
Ga
dB
27.97
23.50
23.02
20.07
17.85
16.35
15.29
14.11
14.01
11.92
11.00
10.56
9.80
9.31
8.41
7.73
40
MSG/MAG & |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
10
S21
0
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 30. MSG/MAG & |S21|2 (dB)
@ 4V, 75 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
10
ATF-531P8 Typical Scattering Parameters, VDS = 5V, IDS = 135 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
S22
Mag. Ang.
MSG/MAG
dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
1.9
2
2.4
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.805
0.815
0.831
0.839
0.844
0.846
0.850
0.852
0.855
0.854
0.855
0.857
0.851
0.851
0.852
0.857
0.859
0.870
0.867
0.877
0.881
0.885
0.892
0.875
0.883
0.886
0.913
0.908
0.891
0.928
-56.0
-94.0
-116.9
-131.7
-140.9
-148.3
-154.0
-158.7
-162.5
-165.6
-177.1
176.3
174.9
169.4
161.8
151.1
141.0
131.8
123.6
115.6
106.7
95.6
85.2
74.2
63.8
57.9
47.4
43.1
32.2
20.6
34.11
32.03
29.97
28.10
26.58
25.20
24.00
22.93
21.98
21.10
17.71
15.71
15.46
13.89
11.92
9.35
7.30
5.57
4.11
2.80
1.82
0.75
-0.30
-1.33
-2.49
-3.58
-4.78
-5.81
-6.99
-8.64
50.734
39.967
31.517
25.418
21.322
18.207
15.852
14.014
12.559
11.351
7.681
6.099
5.931
4.946
3.943
2.935
2.318
1.899
1.605
1.381
1.233
1.090
0.966
0.858
0.751
0.662
0.577
0.512
0.447
0.370
152.1
132.6
120.5
112.1
106.4
101.8
98.0
94.8
92.0
89.6
79.5
73.0
71.7
65.6
57.1
43.9
30.9
18.5
6.5
-5.2
-17.0
-30.1
-42.9
-54.3
-65.9
-76.4
-86.8
-94.4
-105.1
-112.1
-39.17
-34.89
-33.56
-32.77
-32.40
-32.04
-31.70
-31.70
-31.70
-31.37
-31.06
-30.46
-30.17
-29.63
-29.12
-27.74
-26.56
-25.51
-24.44
-23.48
-22.38
-21.41
-20.72
-20.00
-19.66
-19.09
-18.71
-18.56
-18.49
-18.86
0.011
0.018
0.021
0.023
0.024
0.025
0.026
0.026
0.026
0.027
0.028
0.030
0.031
0.033
0.035
0.041
0.047
0.053
0.060
0.067
0.076
0.085
0.092
0.100
0.104
0.111
0.116
0.118
0.119
0.114
62.6
46.6
36.3
30.7
27.2
24.9
23.3
22.3
21.6
20.9
21.1
22.3
22.3
23.3
24.3
24.4
22.8
19.7
16.3
11.8
6.1
-1.3
-9.1
-17.0
-24.8
-31.8
-40.3
-47.8
-54.9
-62.6
0.468
0.419
0.387
0.364
0.354
0.346
0.342
0.339
0.337
0.335
0.331
0.331
0.336
0.315
0.323
0.343
0.367
0.391
0.417
0.440
0.458
0.482
0.500
0.540
0.593
0.636
0.660
0.699
0.747
0.717
36.64
33.46
31.76
30.43
29.49
28.62
27.85
27.32
26.84
26.24
24.38
23.08
22.82
21.76
19.82
16.43
14.19
12.82
11.24
10.41
9.75
8.94
8.31
6.52
5.87
5.23
6.01
4.78
2.98
2.41
-45.2
-79.7
-102.0
-117.9
-127.0
-135.4
-141.6
-146.5
-150.5
-153.9
-165.0
-170.4
-170.9
-175.8
178.2
169.9
162.1
154.0
146.2
137.7
129.1
118.1
107.5
98.6
87.1
75.8
66.8
57.0
48.4
39.9
Typical Noise Parameters, VDS = 5V, IDS = 135 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
0.5
0.9
1
1.5
2
2.4
3
3.5
3.9
5
5.8
6
7
8
9
10
0.45
0.48
0.50
0.55
0.65
0.70
0.77
0.84
0.90
1.06
1.20
1.19
1.40
1.52
1.75
1.88
0.20
0.32
0.35
0.40
0.46
0.49
0.55
0.58
0.62
0.66
0.69
0.69
0.77
0.81
0.82
0.85
154.00
160.00
166.00
170.00
177.40
-175.10
-168.90
-162.60
-158.20
-145.80
-137.30
-135.40
-126.50
-117.90
-107.50
-95.60
0.037
0.032
0.030
0.030
0.030
0.032
0.031
0.037
0.043
0.085
0.140
0.150
0.320
0.550
0.890
1.530
Ga
dB
28.85
25.13
24.43
21.26
19.38
17.90
16.33
15.23
14.60
12.66
11.60
11.38
10.55
9.84
9.05
8.29
40
MSG/MAG & |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
10
S21
0
-10
0
5
10
15
20
FREQUENCY (GHz)
2
Figure 31. MSG/MAG & |S21| (dB)
@ 5V, 135 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
11
ATF-531P8 Typical Scattering Parameters, VDS = 3V, IDS = 135 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
S22
Mag. Ang.
MSG/MAG
dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
1.9
2
2.4
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.823
0.826
0.842
0.846
0.851
0.850
0.855
0.856
0.859
0.857
0.857
0.858
0.855
0.855
0.854
0.858
0.860
0.868
0.866
0.877
0.876
0.880
0.883
0.874
0.878
0.884
0.906
0.907
0.893
0.925
-57.1
-95.6
-118.2
-133.1
-142.0
-149.2
-154.9
-159.5
-163.2
-166.3
-177.7
175.8
174.4
168.8
161.4
150.7
140.4
131.4
123.2
114.8
106.3
95.1
84.7
73.6
62.9
56.9
46.7
42.9
32.2
20.7
33.96
31.82
29.66
27.75
26.21
24.83
23.62
22.55
21.59
20.71
17.32
15.31
15.08
13.51
11.54
8.98
6.92
5.21
3.79
2.52
1.57
0.56
-0.46
-1.51
-2.56
-3.54
-4.70
-5.61
-6.80
-8.38
49.888
38.989
30.415
24.416
20.452
17.443
15.178
13.405
12.012
10.853
7.342
5.828
5.676
4.738
3.774
2.812
2.219
1.821
1.547
1.337
1.198
1.066
0.948
0.840
0.745
0.665
0.582
0.524
0.457
0.381
151.3
131.6
119.6
111.4
105.9
101.4
97.7
94.7
92.0
89.6
79.9
73.6
72.3
66.4
58.2
45.3
32.8
21.0
9.4
-2.0
-13.7
-26.0
-38.2
-49.6
-61.1
-71.0
-80.8
-88.0
-99.8
-107.2
-37.72
-33.98
-32.77
-32.04
-31.70
-31.37
-31.37
-31.06
-31.06
-30.75
-30.46
-29.90
-29.37
-29.12
-28.40
-27.13
-26.02
-24.88
-23.88
-22.85
-21.83
-21.11
-20.35
-19.83
-19.41
-18.94
-18.71
-18.49
-18.42
-18.86
0.013
0.020
0.023
0.025
0.026
0.027
0.027
0.028
0.028
0.029
0.030
0.032
0.034
0.035
0.038
0.044
0.050
0.057
0.064
0.072
0.081
0.088
0.096
0.102
0.107
0.113
0.116
0.119
0.120
0.114
62.6
45.7
36.0
30.1
26.8
24.4
22.9
22.1
21.4
21.1
21.0
21.6
22.1
22.6
22.8
22.7
20.7
17.2
13.4
8.5
2.6
-5.0
-12.9
-20.7
-28.5
-35.9
-43.9
-51.4
-58.7
-66.3
0.427
0.418
0.421
0.420
0.419
0.419
0.419
0.420
0.421
0.419
0.418
0.418
0.410
0.403
0.409
0.423
0.440
0.457
0.475
0.490
0.502
0.519
0.530
0.566
0.613
0.652
0.670
0.704
0.747
0.717
35.84
32.90
31.21
29.90
28.96
28.10
27.50
26.80
26.32
25.73
23.89
22.60
22.23
21.32
19.97
16.15
13.82
12.31
10.81
10.00
9.09
8.20
7.31
6.06
5.32
4.87
4.76
4.29
2.90
2.20
-55.1
-92.8
-115.9
-130.7
-139.0
-146.4
-151.9
-156.1
-159.7
-162.6
-172.9
-178.2
-179.1
176.0
169.8
161.0
152.8
144.4
136.6
128.0
119.3
108.7
98.4
90.7
79.7
69.3
60.8
51.6
43.7
35.8
Typical Noise Parameters, VDS = 3V, IDS = 135 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
0.5
0.9
1
1.5
2
2.4
3
3.5
3.9
5
5.8
6
7
8
9
10
0.25
0.30
0.30
0.36
0.45
0.52
0.66
0.70
0.87
1.02
1.13
1.24
1.34
1.58
1.78
1.88
0.20
0.25
0.35
0.40
0.46
0.52
0.56
0.62
0.65
0.67
0.71
0.73
0.82
0.83
0.81
0.83
166.00
169.00
171.00
173.00
176.80
-174.70
-169.80
-162.80
-157.90
-145.70
-136.80
-135.10
-126.20
-116.90
-107.50
-95.40
0.020
0.022
0.018
0.019
0.020
0.021
0.025
0.028
0.042
0.082
0.140
0.175
0.380
0.645
0.870
1.350
28.47
24.36
24.24
21.17
19.30
18.08
16.26
15.33
14.62
12.52
11.53
11.40
10.57
9.67
8.59
7.76
40
MSG/MAG & |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
10
S21
0
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 32. MSG/MAG & |S21|2 (dB)
@ 3V, 135 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
12
Device Models
Refer to Agilent’s Web Site
www.agilent.com/view/rf
Ordering Information
Part Number
No. of Devices
Container
ATF-531P8-TR1
3000
7” Reel
ATF-531P8-TR2
10000
13”Reel
ATF-531P8-BLK
100
antistatic bag
2 x 2 LPCC (JEDEC DFP-N) Package Dimensions
D1
D
pin1
P
pin1
8
1
2
e
E1
3
R
3PX
4
5
Top View
Bottom View
A1
A
A2
End View
Side View
DIMENSIONS
SYMBOL
A
A1
A2
b
D
D1
E
E1
e
P
L
MIN.
0.70
0
0.225
1.9
0.65
1.9
1.45
0.20
0.35
NOM.
0.75
0.02
0.203 REF
0.25
2.0
0.80
2.0
1.6
0.50 BSC
0.25
0.40
DIMENSIONS ARE IN MILLIMETERS
13
E
6
b
L
A
7
MAX.
0.80
0.05
0.275
2.1
0.95
2.1
1.75
0.30
0.45
PCB Land Pattern and Stencil Design
2.72 (107.09)
2.80 (110.24)
0.70 (27.56)
0.63 (24.80)
0.25 (9.84)
0.22 (8.86)
0.25 (9.84)
PIN 1
φ0.20 (7.87)
0.50 (19.68)
0.50 (19.68)
Solder
mask
RF
transmission
line
0.32 (12.79)
PIN 1
1.54 (60.61)
1.60 (62.99)
0.28 (10.83)
+
0.60 (23.62)
0.25 (9.74)
0.63 (24.80)
0.72 (28.35)
0.80 (31.50)
0.15 (5.91)
0.55 (21.65)
Stencil Layout (top view)
PCB Land Pattern (top view)
Device Orientation
4 mm
REEL
8 mm
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
14
3PX
3PX
3PX
3PX
Tape Dimensions
P0
P
D
P2
E
F
W
+
+
D1
Tt
t1
K0
10° Max
10° Max
A0
DESCRIPTION
CAVITY
PERFORATION
CARRIER TAPE
COVER TAPE
DISTANCE
15
B0
SYMBOL
SIZE (mm)
SIZE (inches)
LENGTH
A0
2.30 ± 0.05
0.091 ± 0.004
WIDTH
B0
2.30 ± 0.05
0.091 ± 0.004
DEPTH
K0
1.00 ± 0.05
0.039 ± 0.002
PITCH
P
4.00 ± 0.10
0.157 ± 0.004
BOTTOM HOLE DIAMETER
D1
1.00 + 0.25
0.039 + 0.002
DIAMETER
D
1.50 ± 0.10
0.060 ± 0.004
PITCH
P0
4.00 ± 0.10
0.157 ± 0.004
POSITION
E
1.75 ± 0.10
0.069 ± 0.004
WIDTH
W
THICKNESS
t1
8.00 + 0.30
8.00 – 0.10
0.254 ± 0.02
0.315 ± 0.012
0.315 ± 0.004
0.010 ± 0.0008
WIDTH
C
5.4 ± 0.10
0.205 ± 0.004
TAPE THICKNESS
Tt
0.062 ± 0.001
0.0025 ± 0.0004
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788 6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6271 2451
India, Australia, New Zealand: (+65) 6271 2394
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Korea: (+65) 6271 2194
Malaysia, Singapore: (+65) 6271 2054
Taiwan: (+65) 6271 2654
Data subject to change.
Copyright © 2002 Agilent Technologies, Inc.
Obsoletes 5988-8407EN (12/02)
July 31, 2003
5988-9990EN
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