Pan Jit BC547C Npn general purpose transistor Datasheet

BC546,BC547,BC548 SERIES
NPN GENERAL PURPOSE TRANSISTOR
VOLTAGE
30V/45V/65V
625 mWatts
POWER
FEATURES
• NPN epitaxial silicon, planar design
• Collector current I C = 100mA
• Complimentary (PNP) device:BC556,BC557,BC558 Series
• Pb free product :99% Sn above can meet RoHS
environment substance directive request
MECHANICAL DATA
• Case: TO-92
• Terminals: Solderable per MIL-STD-202, Method 208
• Approx Weight : 0.02grams
• Device Marking :
BC546A=546A
BC546B=546B
-
BC547A=547A
BC547B=547B
BC547C=547C
BC548A=548A
BC548B=548B
BC548C=548C
ABSOLUTE MAXIMUM RATINGS
PA RA ME TE R
S ymbol
Value
Uni ts
C ollector - E mi tter Voltage
B C 546
B C 547
B C 548
VC E O
65
45
30
V
C ollector - B ase Voltage
B C 546
B C 547
B C 548
VC B O
80
50
30
V
E mi tter - B ase Voltage
B C 546
B C 547
B C 548
VE B O
6.0
6.0
5.0
V
100
mA
mW
C ollector C urrent - C onti nuous
I
C
Max P ower D i ssi pati on
P TOT
625
S torage Temperature
TSTG
-55 to 150
O
-55 to 150
O
Juncti on Temperature
TJ
C
C
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resi stance, Juncti on to Ambi ent
STAD-DEC.02.2005
Symbol
Value
RθJA
200
Uni ts
O
C /W
PAGE . 1
BC546,BC547,BC548 SERIES
ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted)
PA RA M E TE R
S ym b o l
M IN .
T YP.
MA X .
U ni t s
C o lle c to r - E mi tte r B re a k d o wn Vo lta g e
( IC = 1 0 m A , IB = 0 )
B C 5 4 6 A ,B
B C 5 4 7 A ,B ,C
B C 5 4 8 A ,B ,C
V (B R)C E O
65
45
30
-
-
V
C o lle c to r - B a s e B re a k d o wn Vo lta g e
( IC = 1 0 u A , IE = 0 )
B C 5 4 6 A ,B
B C 5 4 7 A ,B ,C
B C 5 4 8 A ,B ,C
V (B R)C B O
80
50
30
-
-
V
E mi tte r - B a s e B re a k d o wn Vo lta g e
( IE = 1 0 u A , IC = 0 )
B C 5 4 6 A ,B
B C 5 4 7 A ,B ,C
B C 5 4 8 A ,B ,C
V (B R)E B O
6 .0
6 .0
5 .0
-
-
V
IE B O
-
-
100
nA
IC B O
-
-
15
5 .0
nA
uA
-
90
150
270
-
11 0
200
420
180
290
520
220
450
800
E m i t t e r - B a s e C ut o f f C ur r e nt ( V EB= 5 V )
C o l l e c t o r - B a s e C u t o f f C u r r e n t ( V C B = 3 0 V , IE = 0 )
D C C ur r e nt G a i n
( IC = 1 0 u A , V C E = 5 V )
T J= 1 5 0 OC
B C 5 4 6 A ,B
B C 5 4 7 A ,B ,C
B C 5 4 8 A ,B ,C
-
hFE
( IC = 2 . 0 m A , V C E = 5 V )
B C 5 4 6 A ,B
B C 5 4 7 A ,B ,C
B C 5 4 8 A ,B ,C
C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e
( IC = 1 0 m A , IB = 0 . 5 m A )
( IC = 1 0 0 m A , IB = 5 . 0 m A )
V C E ( S AT)
-
-
0 .2 5
0 .6
V
B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e
( IC = 1 0 m A , IB = 0 . 5 m A )
( IC = 1 0 0 m A , IB = 5 . 0 m A )
V B E ( S AT)
-
0 .7
0 .9
-
V
B a s e - E mi tte r Vo lta g e
( IC = 2 m A , V C E = 0 . 5 m A )
( IC = 1 0 m A , V C E = 5 . 0 m A )
V B E ( S AT)
0 .5 8
-
0 .6 6 0
-
0 .7 0
0 .7 7
V
C o l l e c t o r - B a s e C a p a c i t a nc e
( V C B = 1 0 V , IE = 0 , f = 1 M H Z )
C CBO
-
-
4 .5
pF
LEGAL STATEMENT
Copyright PanJit International, Inc 2005
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
STAD-DEC.02.2005
PAGE . 2
BC546,BC547,BC548 SERIES
ELECTRICAL CHARACTERISTICS CURVE BC546A,BC547A,BC548A ONLY
300
TJ =150˚ C
V CB=30V
250
TJ =100˚ C
200
10
hFE
ICB0, Collector Current (nA)
100
150
TJ =25 C
100
1
V CE=5V
50
0
0.01
0
25
50
75
100
125
150
0.1
1
10
100
1000
Collector Current, IC (mA)
Junction Temperature, TJ (OC)
Fig. 1.
Typical ICB0 vs.
Fig. 2.
1200
Typical hFE vs.
1000
1000
TJ = 25 ˚C
TJ = 100 ˚C
TJ = 100 ˚C
V CE(sat), (mV)
VBE(ON), (mV)
800
600
100
400
TJ = 150 ˚C
TJ = 25 ˚C
VCE=5V
200
0
0.01
IC/IB=20
TJ = 150 ˚C
0.1
1
10
100
10
0.01
1000
Collector Current, IC (mA)
Fig. 3.
0.1
1
Fig. 4.
Typical VBE(ON) vs.
1200
Capacitance, C (pF)
VBE(sat), (mV)
TJ = 100 ˚C
400
Cob (CB)
IC/IB=20
TJ = 150 ˚C
1
0.1
1
10
100
0.1
1
Collector Current, IC (mA)
Fig. 5.
STAD-DEC.02.2005
Typical VCE(SAT) vs.
TJ = 25 ˚C
600
0
0.01
1000
Cib (EB)
TJ = 25 ˚C
200
100
10
1000
800
10
Collector Current, IC (mA)
Typical VBE(SAT) vs.
10
100
Reverse Voltage (V)
Fig. 6.
Typical Capacitances vs.
PAGE . 3
BC546,BC547,BC548 SERIES
ELECTRICAL CHARACTERISTICS CURVE BC546B,BC547B,BC548B ONLY
500
100
TJ =150˚ C
VCE=5V
400
350
TJ =100˚ C
10
300
hFE
ICB0, Collector Current (nA)
450
VCB=30V
TJ =25 ˚C
250
200
1
150
100
50
0
25
50
75
100
125
0
0.01
150
0.1
1
Junction Temperature, TJ ( C)
Fig. 1.
10
100
1000
Collector Current, IC (mA)
O
Typical ICB0 vs. Junction Temperature
Fig. 2.
Typical hFE vs. Collector Current
1000
1200
1000
TJ = 25 ˚C
TJ = 100 ˚C
TJ = 100 ˚C
VCE(sat), (mV)
VBE(ON), (mV)
800
600
TJ = 150 ˚C
100
400
TJ = 25 ˚C
200
VCE=5V
TJ = 150 ˚C
0
0.01
0.1
1
10
100
IC/IB=20
10
0.01
1000
Collector Current, IC (mA)
Fig. 3.
0.1
1
Typical VBE(ON) vs. Collector Current
1000
10
1000
Cib (EB)
800
TJ = 100 ˚C
600
400
200
1
0.1
1
10
100
0.1
Collector Current, IC (mA)
Typical VBE(SAT) vs. Collector Current
STAD-DEC.02.2005
Cob (CB)
IC/IB=20
TJ = 150 ˚C
0
0.01
TJ = 25 ˚C
Capacitance, C (pF)
TJ = 25 ˚C
VBE(sat), (mV)
100
Typical VCE(SAT) vs. Collector Current
Fig. 4.
1200
Fig. 5.
10
Collector Current, IC (mA)
1
10
100
Reverse Voltage (V)
Fig. 6.
Typical Capacitances vs. Reverse Voltage
PAGE . 4
BC546,BC547,BC548 SERIES
ELECTRICAL CHARACTERISTICS CURVE BC547C,BC548C ONLY
1200
100
VCE=5V
ICB0, Collector Current (nA)
VCB=30V
TJ=150˚ C
1000
hFE
10
800
TJ=100˚ C
600
TJ =25 C
400
1
200
0
0.01
0
25
50
75
100
125
150
0.1
1
10
100
1000
Collector Current, IC, (mA)
Junction Temperature, TJ (OC)
Fig. 1.
Fig. 2.
Typical ICB0 vs. Junction
Typical hFE vs. Collector
1000
1200
1000
TJ = 25 ˚C
TJ = 100 ˚C
VCE(sat), (mV)
VBE(ON), (mV)
800
600
TJ = 100 ˚C
TJ = 150 ˚C
100
400
TJ = 25 ˚C
IC/IB=20
200
VCE=5V
TJ = 150 ˚C
0
0.01
0.1
1
10
100
10
0.01
1000
0.1
Fig. 3.
1
10
100
Typical VBE(ON) vs. Collector Current
Fig. 4.
1200
Typical VCE(SAT) vs. Collector
10
1000
TJ = 25 ˚C
Cib (EB)
TJ = 25 ˚C
Capacitance, C (pF)
VBE(sat), (mV)
800
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
TJ = 100 ˚C
600
400
Cob (CB)
IC/IB=20
200
TJ = 150 ˚C
0
0.01
1
0.1
1
10
100
0.1
STAD-DEC.02.2005
Typical VBE(SAT) vs. Collector
10
100
Reverse Voltage (V)
Collector Current, IC (mA)
Fig. 5.
1
Fig. 6.
Typical Capacitances vs. Reverse
PAGE . 5
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