NXP BC857C Pnp general purpose transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BC856; BC857; BC858
PNP general purpose transistors
Product data sheet
Supersedes data of 2003 Apr 09
2004 Jan 16
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 65 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846, BC847 and BC848.
MARKING
handbook, halfpage
MARKING CODE(1)
TYPE NUMBER
BC856
3D*
BC856A
3A*
BC856B
3B*
BC857
3H*
BC857A
3E*
BC857B
3F*
BC857C
3G*
BC858B
3K*
3
3
1
2
1
Top view
2
MAM256
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BC856
−
plastic surface mounted package; 3 leads
SOT23
BC857
−
plastic surface mounted package; 3 leads
SOT23
BC858
−
plastic surface mounted package; 3 leads
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BC856
−
−80
V
BC857
−
−50
V
BC858
−
−30
V
BC856
−
−65
V
BC857
−
−45
V
BC858
−
−30
V
−
−5
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
2004 Jan 16
3
TYPICAL
UNIT
500
K/W
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
UNIT
−
−1
−15
nA
−
−
−4
μA
−
−
−100
nA
BC856
125
−
475
BC857
125
−
800
BC856A; BC857A
125
−
250
BC856B; BC857B; BC858B
220
−
475
BC857C
420
−
800
IC = −10 mA; IB = −0.5 mA −
−75
−300
mV
IC = −100 mA; IB = −5 mA; −
note 1
−250
−650
mV
IC = −10 mA; IB = −0.5 mA −
−700
−
mV
IC = −100 mA; IB = −5 mA; −
note 1
−850
−
mV
IC = −2 mA; VCE = −5 V
−600
−650
−750
mV
IC = −10 mA; VCE = −5 V
−
−
−820
mV
VEB = −5 V; IC = 0
hFE
DC current gain
IC = −2 mA; VCE = −5 V
VBE
MAX.
VCB = −30 V; IE = 0;
Tj = 150 °C
emitter-base cut-off current
VBEsat
TYP.
VCB = −30 V; IE = 0
collector-base cut-off current
IEBO
VCEsat
MIN.
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0;
f = 1 MHz
−
4.5
−
pF
fT
transition frequency
VCE = −5 V; IC = −10 mA;
f = 100 MHz
100
−
−
MHz
F
noise figure
IC = −200 μA; VCE = −5 V;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
−
2
10
dB
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Jan 16
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
MGT711
500
MGT712
−1200
VBE
(mV)
−1000
handbook, halfpage
handbook, halfpage
hFE
400
(1)
(1)
−800
300
(2)
−600
(2)
200
(3)
−400
(3)
100
−200
0
−10−2
−10−1
−1
−10
0
−10−2
−102
−103
I C (mA)
−10−1
BC857A; VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857A; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MGT713
−104
handbook, halfpage
VCEsat
(mV)
−1200
VBEsat
(mV)
−1000
−103
−800
−102
−103
I C (mA)
MGT714
handbook, halfpage
−102
(1)
(2)
(3)
−400
(1)
−200
(3) (2)
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
BC857A; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857A; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
Fig.4
Fig.5
−10
−102
−103
I C (mA)
(3) Tamb = 150 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 16
−10
Base-emitter voltage as a function of
collector current; typical values.
−600
−10
−10−1
−1
5
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
MGT715
1000
MGT716
−1200
VBE
(mV)
−1000
handbook, halfpage
handbook, halfpage
hFE
800
(1)
−800
600
(2)
(1)
−600
400
200
0
−10−2
−10−1
(2)
−400
(3)
−200
−1
−10
(3)
0
−10−2
−102
−103
I C (mA)
−10−1
BC857B; VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857B; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.6
Fig.7
DC current gain as a function of collector
current; typical values.
MGT717
−104
handbook, halfpage
VCEsat
(mV)
−1200
VBEsat
(mV)
−1000
−103
−800
−1
−10
−102
−103
I C (mA)
Base-emitter voltage as a function of
collector current; typical values.
MGT718
handbook, halfpage
(1)
(2)
−600
(3)
−400
−102
(1)
−200
(3) (2)
−10
−10−1
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
BC857B; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857B; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
Fig.8
Fig.9
−102
−103
I C (mA)
(3) Tamb = 150 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 16
−10
6
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
MGT719
1000
MGT720
−1200
VBE
(mV)
−1000
handbook, halfpage
handbook, halfpage
hFE
(1)
800
(1)
−800
600
(2)
(2)
−600
400
−400
(3)
(3)
200
0
−10−2
−200
−10−1
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
−10
−102
−103
I C (mA)
BC857C; VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857C; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.10 DC current gain as a function of collector
current; typical values.
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
MGT721
−104
handbook, halfpage
VCEsat
(mV)
−1200
VBEsat
(mV)
−1000
−103
−800
MGT722
handbook, halfpage
(1)
(2)
−600
(3)
−400
−102
(1)
−200
(3) (2)
−10
−10−1
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
−10
−102
−103
I C (mA)
BC857C; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857C; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 16
(3) Tamb = 150 °C.
7
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Jan 16
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
8
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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does not give any representations or warranties,
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Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2004 Jan 16
9
NXP Semiconductors
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Printed in The Netherlands
R75/06/pp10
Date of release: 2004 Jan 16
Document order number: 9397 750 12397