Preliminary Datasheet BCR1BM-16A R07DS0967EJ0001 Rev.0.01 Nov 28, 2012 800V - 1A - Triac Low Power Use Features Tj: 125 °C Planar Passivation Type IT (RMS) : 1 A VDRM : 800 V (Tj = 125C) IFGTI, IRGTI, IRGTIII : 15 mA Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92) 1 2 1 2 1. T2 Terminal 2. Gate Terminal 3. T1 Terminal 3 3 Applications Washing machine, electric fan, air cleaner, other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltage Voltage class 16 800 Symbol Note1 VDRM Parameter RMS on-state current Symbol IT (RMS) Ratings 1 Unit A Surge on-state current ITSM 8 A I2t 0.26 A2s PGM PG (AV) VGM IGM Tj Tstg — 1 0.1 6 0.5 – 40 to +125 – 40 to +125 0.23 W W V A °C °C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass R07DS0967EJ0001 Rev.0.01 Nov 28, 2012 Unit V Conditions Commercial frequency, sine full wave 360° conduction, Tc = 49°C 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Typical value Page 1 of 3 BCR1BM-16A Preliminary Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 1.0 2.0 Unit mA V Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 1.2 A, Instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 2.0 2.0 2.0 V V V Tj = 25°C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT — — — — — — 15 15 15 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 , RG = 330 VGD Rth (j-c) 0.1 — — — — 50 V °C/W Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 0.5 — — V/s Tj = 125°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 1. 2. 3. 4. Gate open. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 0.5 A/ms 3. Peak off-state voltage VD = 400 V R07DS0967EJ0001 Rev.0.01 Nov 28, 2012 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 3 BCR1BM-16A Preliminary Package Dimensions Package Name TO-92* JEITA Package Code SC-43A RENESAS Code PRSS0003EA-A Previous Code T920 MASS[Typ.] 0.23g Unit: mm φ5.0Max 11.5Min 5.0Max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle φ0.7 Ordering Information Orderable Part Number BCR1BM-16A#B00 BCR1BM-16A-A6#B00 BCR1BM-16A-TB#B00 Note: Packing Bag Bag Adhesive Tape Quantity 500 pcs. 500 pcs. 2000 pcs. Remark Straight type A6 Lead form A8 Lead form Please confirm the specification about the shipping in detail. R07DS0967EJ0001 Rev.0.01 Nov 28, 2012 Page 3 of 3 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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