Freescale C1210C104K5RACTR Rf ldmos wideband integrated power amplifier Datasheet

Freescale Semiconductor
Technical Data
MW4IC001MR4
Rev. 3, 1/2005
RF LDMOS Wideband Integrated
Power Amplifiers
MW4IC001NR4
MW4IC001MR4
The MW4IC001 wideband integrated circuit is designed for use as a distortion
signature device in analog predistortion systems. It uses Freescale’s newest
High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip
design makes it usable from 800 MHz to 2170 MHz. The linearity performances
cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and
W - CDMA.
• Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
• High Gain, High Efficiency and High Linearity
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• N Suffix Indicates Lead - Free Terminations
• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
800 - 2170 MHz, 900 mW, 28 V
W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
4.58
0.037
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Symbol
Value
Unit
RθJC
27.3
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case @ 85°C
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
0 (Minimum)
Machine Model
M1 (Minimum)
Charge Device Model
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
1
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 V, ID = 50 µA)
VGS(th)
2
3
5
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 10 mA)
VGS(Q)
2
3.7
5
Vdc
Drain - Source On - Voltage
(VGS = 10 V, ID = 0.05 A)
VDS(on)
—
0.48
0.9
Vdc
Forward Transconductance
(VDS = 10 V, ID = 0.1 A)
gfs
—
0.05
—
S
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
45
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.62
—
pF
Two - Tone Common Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Gps
—
13
—
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
ηD
—
29
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
IMD
—
- 28
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
IRL
—
- 18
—
dB
P1dB
—
0.85
—
W
Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz)
Gps
12
13
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz)
ηD
35
38
—
%
Input Return Loss
(VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz)
IRL
- 10
- 16
—
dB
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Output Power, 1 dB Compression Point, CW
(VDD = 28 Vdc, IDQ = 12 mA, f = 2170 MHz)
MW4IC001NR4 MW4IC001MR4
2
RF Device Data
Freescale Semiconductor
VGG
C1
VDD
C2
+
Z6
C7
C6
C8
Z7
R1
RF
INPUT
DUT
Z1
Z2
C3
C9
Z3
Z4
Z5
Z9
Z10
Z11
L2
Z12
C5
L1
C10
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
R2
Z8
C11
C12
Z13
RF
OUTPUT
C13
C4
1.331″
0.126″
0.065″
0.065″
0.680″
1.915″
0.120″
x 0.044″
x 0.076″
x 0.175″
x 0.195″
x 0.145″
x 0.055″
x 0.141″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
PCB
0.062″ x 0.044″ to 0.615″ Taper
0.082″ x 0.615″ Microstrip
0.075″ x 0.044″ Microstrip
0.625″ x 0.044″ Microstrip
1.375″ x 0.044″ Microstrip
Rogers RO4350, 0.020″, εr = 3.5
Figure 1. MW4IC001NR4(MR4) 900 MHz Test Circuit Schematic
Table 6. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C6
0.1 µF, 100 V Chip Capacitors
C1210C104K5RACTR
Kemet
C2, C3, C5, C7
43 pF, 500 V Chip Capacitors
100B430JP500X
ATC
C4
12 pF, 500 V Chip Capacitor
100B120JP500X
ATC
C8
22 µF, 35 V Tantalum Chip Capacitor
T491X226K035AS
Kemet
C9
4.7 pF, 500 V Chip Capacitor
100B4R7CP500X
ATC
C10, C11
0.6 - 4.5 pF, 500 V Variable Capacitors
27271SL
Johanson
C12
2.7 pF, 500 V Chip Capacitor
100B2R7CP500X
ATC
C13
3.3 pF, 500 V Chip Capacitor
100B3R3CP500X
ATC
L1
5.6 nH Chip Inductor
0805 Series
AVX
L2
10 nH Chip Inductor
1008 Series
ATC
R1
100 W Chip Resistor
CRCW12061001F100
Dale
R2
20 W Chip Resistor
CRCW120620R0F100
Dale
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
3
VGG
C1
V DD
C8
C2
C6
C7
C9
R1
C3
C4
C10
L1
R2
C12
L2
C5
C11
C13
MW4IC001MR4
900 MHz
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Layout
MW4IC001NR4 MW4IC001MR4
4
RF Device Data
Freescale Semiconductor
50
−15
IRL
46
42
−17
ηD
−19
−21
38
VDS = 28 Vdc
Pout = 0.9 W (PEP)
IDQ = 14 mA
Two −Tone Measurement
100 kHz Tone Spacing
34
30
26
22
−23
−25
−27
−29
IM3
−31
18
Gps
14
10
855
860
−33
865
870
875
880
885
890
895
900
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS - 900 MHz
−35
905
f1, FREQUENCY (MHz)
Figure 3. Two-Tone Performance versus
Frequency
55
13
50
12
45
P1dB
11
40
10
35
9
30
8
25
VDS = 28 Vdc
IDQ = 14 mA
f = 880 MHz
7
20
15
1.4
6
0
0.2
0.4
0.6
0.8
1.0
−25
1.2
IMD, INTERMODULATION DISTORTION (dBc)
G ps , POWER GAIN (dB)
14
60
ηD
Gps
ηD, DRAIN EFFICIENCY (%)
15
IDQ = 8 mA
−35
10 mA
18 mA
−40
16 mA
−45
14 mA
Two −Tone Measurement
100 kHz Tone Spacing
12 mA
−50
−55
0.01
0.1
1
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. CW Performance versus Output
Power
Figure 5. Intermodulation Distortion versus
Output Power
−25
10
−25
−30
VDS = 28 Vdc
IDQ = 14 mA
f1 = 880 MHz
f2 = 880.1 MHz
−35
−40
−45
3rd Order
−50
−55
5th Order
−60
Two −Tone Measurement
100 kHz Tone Spacing
−65
7th Order
−70
0.01
0.1
1
10
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
VDS = 28 Vdc
f1 = 880 MHz
f2 = 880.1 MHz
−30
−30
−35
−40
10 MHz
−45
1 MHz
Tone
Spacing = 100 kHz
−50
0.01
0.1
VDS = 28 Vdc
IDQ = 14 mA
f1 = 880 MHz,
f2 = f1 + Tone Spacing
Two −Tone Measurement
1
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Third Order Intermodulation
Distortion versus Output Power
10
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
5
Z5
VGG
Z12
+
C1
VDD
C2
+
Z4
C4
C6
Z11
R1
RF
INPUT
Z8
DUT
Z1
Z2
Z3
Z6
Z9
Z13
Z10
Z15
Z14
RF
OUTPUT
Z7
C5
C3
C7
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
1.018″
0.495″
0.893″
1.340″
0.912″
0.241″
0.076″
0.294″
x 0.044″
x 0.296″
x 0.500″
x 0.022″
x 0.022″
x 0.500″
x 0.150″
x 0.150″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.067″ x 0.264″ Microstrip
0.457″ x 0.492″ Microstrip
0.719″ x 0.022″ Microstrip
1.149″ x 0.022″ Microstrip
0.677″ x 0.434″ Microstrip
0.095″ x 0.264″ Microstrip
0.772″ x 0.044″ Microstrip
Rogers RO4350, 0.020″, εr = 3.5
Figure 8. MW4IC001NR4(MR4) 1990 MHz Test Circuit Schematic
Table 7. MW4IC001NR4(MR4) 1990 MHz Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C6
22 µF, 35 V Tantalum Capacitors
T491X226K035AS
Kemet
C2, C4
10 pF, 500 V Chip Capacitors
100B100JCA500X
ATC
C3, C5
10 pF, 500 V Chip Capacitor
600S100JW
ATC
C7
0.6 - 4.5 pF, 500 V Variable Capacitor
27271SL
Johanson
R1
1 kW Chip Resistor
CRCW12061021F100
Dale
VDD
VGG
C1
C6
C2
C4
R1
C3
C5
C7
MW4IC001MR4
1990 MHz
Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 9. MW4IC001NR4(MR4) 1990 MHz Test Circuit Component Layout
MW4IC001NR4 MW4IC001MR4
6
RF Device Data
Freescale Semiconductor
40
35
30
−11
IRL
−14
ηD
−17
−20
25
VDD = 28 Vdc, Pout = 0.9 W (PEP), IDQ = 12 mA
Two−Tone Measurement, 100 kHz Tone Spacing
20
−23
15
Gps
−26
10
IMD
−29
−32
5
0
1930
1940
1950
1960
1970
1980
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS - 1990 MHz
−35
1990
f1, FREQUENCY (MHz)
14.4
56
48
G ps , POWER GAIN (dB)
14.0
13.6
40
13.2
32
P1dB
VDD = 28 Vdc
IDQ = 12 mA
f = 1990 MHz
12.8
ηD
0.2 0.3
0.4
0.5 0.6
0.7
0.8 0.9
1.0
16
1.1 1.2 1.3
IMD, INTERMODULATION DISTORTION (dBc)
5th Order
−55
−60
7th Order
−75
16 mA
−50
−55
9.6 mA
12 mA
VDD = 28 Vdc
f1 = 1990 MHz, f2 = 1990.1 MHz
Two −Tone Measurement
100 kHz Tone Spacing
0.01
1
0.1
Figure 12. Intermodulation Distortion versus
Output Power
3rd Order
−70
−45
Figure 11. CW Performance versus Output
Power
−40
−65
−40
Pout, OUTPUT POWER (WATTS) PEP
−35
−50
IDQ = 20 mA
−35
Pout, OUTPUT POWER (WATTS)
−30
−45
−30
−60
VDD = 28 Vdc
IDQ = 12 mA, f1 = 1990 MHz, f2 = 1990.1 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
0.01
0.1
1
IMD, THIRD ORDER INTERMODULATION (dBc)
12.4
0.1
24
ηD, DRAIN EFFICIENCY (%)
Gps
IMD, INTERMODULATION DISTORTION (dBc)
Figure 10. Two-Tone Performance versus
Frequency
−30
−35
−40
10 MHz
−45
−50
1 MHz
VDD = 28 Vdc
IDQ = 12 mA
f1 = 1990 MHz
f2 = f1 + Tone Spacing
Two −Tone Measurement
−55
100 kHz
−60
0.01
0.1
OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 13. Intermodulation Distortion
Products versus Output Power
Figure 14. Third Order Intermodulation
Distortion versus Output Power
1
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
7
Z5
VGG
Z12
+
C1
VDD
C2
+
Z4
C4
C6
Z11
R1
RF
INPUT
Z8
DUT
Z1
Z2
Z3
Z6
Z9
Z13
Z10
Z15
Z14
RF
OUTPUT
Z7
C5
C3
C7
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
1.267″
0.058″
0.758″
1.073″
1.361″
0.205″
0.109″
0.210″
x 0.044″
x 0.044″
x 0.256″
x 0.022″
x 0.022″
x 0.332″
x 0.150″
x 0.150″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.106″ x 0.344″ Microstrip
0.783″ x 0.500″ Microstrip
0.847″ x 0.022″ Microstrip
1.055″ x 0.022″ Microstrip
0.291″ x 0.387″ Microstrip
0.050″ x 0.287″ Microstrip
0.950″ x 0.044″ Microstrip
Rogers RO4350, 0.020″, εr = 3.5
Figure 15. MW4IC001NR4(MR4) 2170 MHz Test Circuit Schematic
Table 8. MW4IC001NR4(MR4) 2170 MHz Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C6
22 µF, 35 V Tantalum Capacitors
T491X226K035AS
Kemet
C2, C4
10 pF, 500 V Chip Capacitors
100B100JCA500X
ATC
C3, C5
10 pF, 500 V Chip Capacitor
600S100JW
ATC
C7
0.6 - 4.5 pF, 500 V Variable Capacitor
27271SL
Johanson
R1
1 kW Chip Resistor
CRCW12061021F100
Dale
VDD
VGG
C1
C6
C4
C2
R1
C5
C3
C7
MW4IC001MR4
2170 MHz
Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 16. MW4IC001NR4(MR4) 2170 MHz Test Circuit Component Layout
MW4IC001NR4 MW4IC001MR4
8
RF Device Data
Freescale Semiconductor
32
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS - 2170 MHz
−13
IRL
27
ηD
VDD = 28 Vdc
Pout = 0.9 W (PEP)
IDQ = 12 mA
Two−Tone Measurement,
100 kHz Tone Spacing
22
17
−18
−23
IMD
−28
Gps
12
2110
2120
2130
2140
2150
−33
2170
2160
f, FREQUENCY (MHz)
Figure 17. Two-Tone Performance versus
Frequency
Gps
50
13.0
40
12.6
30
12.2
ηD
20
P1dB
VDD = 28 Vdc
IDQ = 12mA
f = 2170 MHz
11.8
11.4
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
VDD = 28 Vdc, IDQ = 12 mA,
f1 = 2170 MHz, f2 = 2170.1 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
3rd Order
5th Order
−60
−70
−45
9.6 mA
12 mA
−50
0.1
Figure 19. Intermodulation Distortion versus
Output Power
−55
−65
16 mA
−40
Figure 18. CW Performance versus Output
Power
−45
−50
20 mA
−35
Pout, OUTPUT POWER (WATTS) PEP
−35
−40
−30
0.01
IMD,THIRD ORDER INTERMODULATION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−30
−25
VDD = 28 Vdc
f1 = 2170 MHz, f2 = 2170.1 MHz
Two−Tone Measurement
100 kHz Tone Spacing
IDQ = 7.2 mA
Pout, OUTPUT POWER (WATTS) PEP
−20
−25
−20
ηD, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
13.4
60
IMD, INTERMODULATION DISTORTION (dBc)
13.8
7th Order
0.01
0.1
Pout, OUTPUT POWER (WATTS) PEP
Figure 20. Intermodulation Distortion
Products versus Output Power
1
1
−20
−25
−30
−35
VDD = 28 Vdc
IDQ = 12 mA
f1 = 2170 MHz
f2 = f1 + Tone Spacing
Two −Tone Measurement
1 MHz
10 MHz
−40
−45
0.01
100 kHz
0.1
Pout, OUTPUT POWER (WATTS) PEP
1
Figure 21. Third Order Intermodulation
Distortion versus Output Power
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
9
f = 860 MHz
Zload
f = 900 MHz
Zo = 50 Ω
Zsource
f =860 MHz
f = 900 MHz
VDD = 28 V, IDQ = 14 mA, Pout = 0.9 W PEP
f
MHz
Zsource
Ω
Zload
Ω
860
27.853 + j5.908
15.492 + j63.669
865
28.617 + j6.078
15.592 + j68.687
870
29.458 + j6.285
15.788 + j69.799
875
30.306 + j6.422
15.835 + j70.863
880
31.223 + j6.567
15.975 + j71.920
885
32.194 + j6.660
16.094 + j73.091
890
33.228 + j6.656
16.286 + j74.159
895
34.293 + j6.624
16.344 + j75.236
900
35.424 + j6.508
16.628 + j76.283
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 22. Series Equivalent Source and Load Impedance
MW4IC001NR4 MW4IC001MR4
10
RF Device Data
Freescale Semiconductor
f = 2180 MHz
Zload
f = 1920 MHz
f = 2100 MHz
f = 2000 MHz
Zload
f = 2180 MHz
f = 2000 MHz
f = 2100 MHz
Zsource
f = 1920 MHz
Zsource
Zo = 50 Ω
Zo = 50 Ω
VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP
VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP
f
MHz
Zsource
Ω
Zload
Ω
f
MHz
Zsource
Ω
Zload
Ω
1920
4.238 + j15.142
7.764 + j28.829
2100
2.667 + j12.903
5.892 + j26.374
1930
4.322 + j15.362
8.056 + j29.352
2110
2.671 + j13.070
6.092 + j26.739
1940
4.490 + j15.466
8.436 + j29.727
2120
2.664 + j13.224
6.281 + j27.094
1950
4.605 + j15.711
8.809 + j30.249
2130
2.694 + j13.431
6.540 + j27.510
1960
4.752 + j15.904
9.183 + j30.763
2140
2.703 + j13.511
6.748 + j27.795
1970
4.905 + j16.050
9.598 + j31.213
2150
2.702 + j13.700
6.996 + j28.182
1980
5.071 + j16.236
10.030 + j31.690
2160
2.745 + j13.952
7.300 + j28.678
1990
5.262 + j16.446
10.546 + j32.237
2170
2.754 + j14.026
7.562 + j28.987
2000
5.487 + j16.632
11.054 + j32.726
2180
2.784 + j14.206
7.862 + j29.411
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
Z
source
load
Figure 23. Series Equivalent Source and Load Impedance
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
11
NOTES
MW4IC001NR4 MW4IC001MR4
12
RF Device Data
Freescale Semiconductor
NOTES
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
13
NOTES
MW4IC001NR4 MW4IC001MR4
14
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
A
F
3
B
D
1
2
R
L
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
4
N
K
0.35 (0.89) X 45_" 5 _
Q
10_DRAFT
U
H
ZONE V
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
4
ZONE W
C
Y
Y
2
1
3
G
P
S
ZONE X
VIEW Y - Y
STYLE 1:
PIN 1.
2.
3.
4.
CASE 466 - 03
ISSUE C
PLD- 1.5
PLASTIC
DRAIN
GATE
SOURCE
SOURCE
E
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN
MAX
0.255
0.265
0.225
0.235
0.065
0.072
0.130
0.150
0.021
0.026
0.026
0.044
0.050
0.070
0.045
0.063
0.160
0.180
0.273
0.285
0.245
0.255
0.230
0.240
0.000
0.008
0.055
0.063
0.200
0.210
0.006
0.012
0.006
0.012
0.000
0.021
0.000
0.010
0.000
0.010
MILLIMETERS
MIN
MAX
6.48
6.73
5.72
5.97
1.65
1.83
3.30
3.81
0.53
0.66
0.66
1.12
1.27
1.78
1.14
1.60
4.06
4.57
6.93
7.24
6.22
6.48
5.84
6.10
0.00
0.20
1.40
1.60
5.08
5.33
0.15
0.31
0.15
0.31
0.00
0.53
0.00
0.25
0.00
0.25
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
15
How to Reach Us:
Home Page:
www.freescale.com
E - mail:
[email protected]
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
[email protected]
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
[email protected]
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or 303 - 675 - 2140
Fax: 303 - 675 - 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
 Freescale Semiconductor, Inc. 2005. All rights reserved.
MW4IC001NR4 MW4IC001MR4
Document Number: MW4IC001MR4
Rev. 3, 1/2005
16
RF Device Data
Freescale Semiconductor
Similar pages