TEMIC DG418DJ Precision cmos analog switch Datasheet

DG417/418/419
Precision CMOS Analog Switches
Features
Benefits
Applications
Wide Dynamic Range
Low Signal Errors and Distortion
Break-Before-Make
Switching Action
Simple Interfacing
Reduced Board Space
Improved Reliability
15-V Analog Signal Range
On-Resistance—rDS(on): 20 Fast Switching Action—tON: 100 ns
Ultra Low Power Requirements—PD:35 nW
TTL and CMOS Compatible
MiniDIP and SOIC Packaging
44-V Supply Max Rating
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample-and-Hold Circuits
Military Radios
Guidance and Control
Systems
Hard Disk Drives
Description
The DG417/418/419 monolithic CMOS analog switches
were designed to provide high performance switching of
analog signals. Combining low power, low leakages, high
speed, low on-resistance and small physical size, the
DG417 series is ideally suited for portable and battery
powered industrial and military applications requiring high
performance and efficient use of board space.
voltage silicon gate (HVSG) process. Break-before-make is
guaranteed for the DG419, which is an SPDT configuration.
An epitaxial layer prevents latchup.
To achieve high-voltage ratings and superior switching
performance, the DG417 series is built on Siliconix’s high
The DG417 and DG418 respond to opposite control logic
levels as shown in the Truth Table.
Functional Block Diagram and Pin Configuration
Truth Table
DG417
Dual-In-Line and SOIC
S
1
8
Logic
D
NC
2
7
V–
GND
3
6
IN
V+
4
5
VL
DG417
DG418
0
ON
OFF
1
OFF
ON
Logic “0” = 0.8 V, Logic “1” = 2.4 V
Top View
DG419
Truth Table—DG419
Dual-In-Line and SOIC
D
1
8
S2
S1
2
7
V–
GND
3
6
IN
V+
4
5
VL
Logic
SW1
SW2
0
ON
OFF
1
OFF
ON
Logic “0” = 0.8 V, Logic “1” = 2.4 V
Top View
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70051.
Siliconix
S-52880—Rev. D, 28-Apr-97
1
DG417/418/419
Ordering Information
Temp Range
Package
Part Number
DG417/418
8-Pin Plastic MiniDIP
–40 to 85_C
DG417DJ
DG418DJ
DG417DY
8-Pin Narrow SOIC
DG418DY
DG417AK, DG417AK/883
–55 to 125_C
8-Pin CerDIP
DG418AK, DG418AK/883
DG419
–40 to 85_C
8-Pin Plastic MiniDIP
DG419DJ
8-Pin Narrow SOIC
DG419DY
–55 to 125_C
8-Pin CerDIP
DG419AK, DG419AK/883
Absolute Maximum Ratings
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Power Dissipation (Package)b
8-Pin Plastic MiniDIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
8-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
8-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND –0.3 V) to (V+) + 0.3 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) + 2 V
or 30 mA, whichever occurs first
Current, (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current (S or D) Pulsed 1 ms, 10% duty cycle . . . . . . . . . . . . . 100 mA
Storage Temperature
(AK Suffix) . . . . . . . . . . . . . . –65 to 150_C
(DJ, DY Suffix) . . . . . . . . . . . –65 to 125_C
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by
internal diodes. Limit forward diode current to maximum current
ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 6.5 mW/_C above 25_C
e. Derate 12 mW/_C above 75_C
Schematic Diagram (Typical Channel)
Level
Shift/
Drive
Figure 1.
2
Siliconix
S-52880—Rev. D, 28-Apr-97
DG417/418/419
Specificationsa
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
A Suffix
D Suffix
–55 to 125_C
–40 to 85_C
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
IS = –10 mA, VD = 12.5 V
V+ = 13.5 V, V– = –13.5 V
Room
Full
20
Room
Full
–0.1
–0.25
–20
0.25
20
–0.25
–5
0.25
5
DG417
DG418
Room
Full
–0.1
–0.25
–20
0.25
20
–0.25
–5
0.25
5
DG419
Room
Full
–0.1
–0.75
–60
0.75
60
–0.75
–12
0.75
12
DG417
DG418
Room
Full
–0.4
–0.4
–40
0.4
40
–0.4
–10
0.4
10
DG419
Room
Full
–0.4
–0.75
–60
0.75
60
–0.75
–12
0.75
12
Typc
Mind
Maxd Mind Maxd Unit
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
rDS(on)
Full
IS(off)
Switch Off
Leakage Current
ID(off)
Channel On
L k
Leakage
C
Current
ID(on)
V+ = 16.5
16 5 V,
V V–
V = –16.5
16 5 V
VD = 15.5 V
VS = 15.5 V
V+ = 16.5 V,, V– = –16.5 V
VS = VD = 15.5
15 5 V
–15
15
–15
35
45
15
V
35
45
W
nA
Digital Control
Input Current
VIN Low
IIL
Full
0.005
–0.5
0.5
–0.5
0.5
Input Current
VIN High
IIH
Full
0.005
–0.5
0.5
–0.5
0.5
DG417
DG418
Room
Full
100
175
250
175
250
DG417
DG418
Room
Full
60
145
210
145
210
175
250
175
250
mA
Dynamic Characteristics
RL = 300 W , CL = 35 pF
VS = 10 V
See Switching Time
Test Circuit
Turn-On Time
tON
Turn-Off Time
tOFF
Transition Time
tTRANS
RL = 300 W , CL = 35 pF
VS1 = 10 V
VS2 = 10 V
DG419
Room
Full
Break-Before-Make
Time Delay
tD
RL = 300 W , CL = 35 pF
VS1 = VS2 = 10 V
DG419
Room
13
Charge Injection
Q
CL = 10 nF, Vgen = 0 V, Rgen = 0 W
Room
60
Room
8
Source Off
Capacitance
CS(off)
f = 1 MHz
MHz, VS = 0 V
Drain Off Capacitance
Channel On
Capacitance
CD(off)
DG417
DG418
Room
8
CD(on)
DG417
DG418
Room
30
DG419
Room
35
f = 1 MHz,, VS = 0 V
5
ns
5
pC
ppF
Power Supplies
Positive Supply
Current
I+
Room
Full
0.001
Negative Supply
Current
I–
Room
Full
–0.001
Logic Supply Current
IL
Room
Full
0.001
Ground Current
IGND
Siliconix
S-52880—Rev. D, 28-Apr-97
V+ = 16.5 V, V– = –16.5 V
VIN = 0 or 5 V
Room
Full
–0.000
1
1
5
–1
–5
1
5
–1
–5
1
5
–1
–5
A
mA
1
5
–1
–5
3
DG417/418/419
Specificationsa for Unipolar Supplies
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
V V–
V =0V
V+ = 12 V,
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
A Suffix
D Suffix
–55 to 125_C
–40 to 85_C
Mind
Maxd Mind Maxd Unit
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
rDS(on)
Full
IS = –10 mA, VD = 3.8 V
V+ = 10.8 V
0
Room
40
Room
110
Room
40
Room
60
Room
5
Room
0.001
Room
–0.001
12
0
12
V
W
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
RL = 300 W , CL = 35 pF,
p , VS = 8 V
S Switching
S i hi Time
Ti T
i
See
Test Ci
Circuit
Break-Before-Make
Time Delay
tD
RL = 300 W , CL = 35 pF
Charge Injection
Q
CL = 10 nF, Vgen = 0 V, Rgen = 0 W
DG419
ns
pC
Power Supplies
Positive Supply
Current
I+
Negative Supply
Current
I–
Logic Supply Current
IL
Room
0.001
IGND
Room
–0.001
Ground Current
V+ = 13.2 V, VL = 5.25 V
VIN = 0 or 5 V
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
4
Siliconix
S-52880—Rev. D, 28-Apr-97
DG417/418/419
Typical Characteristics
rDS(on) vs. VD and Supply Voltage
50
rDS(on) vs. Temperature
40
5 V
ID = –10 mA
40
TA = 125_C
30
10 V
12 V
15 V
20
rDS(on) ( )
rDS(on) 8 V
30
20 V
25_C
20
–55_C
10
10
0
0
–20
–15
–10
–5
0
5
10
15
20
–15
–10
VD – Drain Voltage (V)
Leakage Currents vs. Analog Voltage
30
Q (pC)
I (pA)
5
0
500 pF
100
100 pF
DG417/418: ID(on)
DG419: ID(off), ID(on)
0
–20
–50
–30
–15
–10
–5
0
5
10
–15
15
VD or VS – Drain or Source Voltage (V)
3.5
Input Switching Threshold vs. Supply Voltages
50
42
40
2.5
V+ (V)
VL = 7 V
2.0
1.5
30
20
VL = 5 V
1.0
10
0.5
0
(V+) 5
(V–) –5
2
0
10
–10
15
–15
20
–10
Siliconix
S-52880—Rev. D, 28-Apr-97
25
–5
30
0
35
0
–10
–5
0
5
10
15
VS – Source Voltage (V)
3.0
VIN (V)
15
1 nF
50
–10
10
CL = 10 nF
V+ = 16.5 V
V– = –16.5 V
VL = 5 V
VIN = 0 V
150
DG417/418: ID(off), IS(off)
DG419: IS(off)
10
0
Drain Charge Injection
200
V+ = 15 V
V– = –15 V
VL = 5 V
20
–5
VD – Drain Voltage (V)
40
0
Operating Voltage Range
ÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉ
5 V CMOS
Compatible
F
0
F
TTL Compatible
VIN = 0.8 V, 2.4 V
CMOS Compatible
–10
–20
–30
Negative Supply V– (V)
F = Voltages Used for Production Testing
–40
5
DG417/418/419
Typical Characteristics (Cont’d)
Switching Time vs. Temperature
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 3 V Pulse
100
Crosstalk and Off Isolation vs. Frequency
140
120
tON
120
DG417/418/419
Source 2
tOFF
60
(dB)
t ON , t OFF (ns)
100
80
40
DG419
Source 1
80
60
40
20
V+ = 15 V
V– = –15 V
VL = 5 V
20
0
0
–55 –40 –20
0
20
40
60
80
100
120
100
1k
10 k
Temperature (_C)
100 k
10 M
1M
100 M
f – Frequency (Hz)
Switching Time vs. Supply Voltages
Switching Time vs. V+
130
80
120
110
60
100
tON
V– = 0 V
VL = 5 V
VIN = 3 V
t ON , t OFF (ns)
t ON , t OFF (ns)
70
tON
90
V– = 0 V
VL = 5 V
VIN = 3 V
80
70
60
50
50
tOFF
tOFF
40
30
40
±10
±11
±12
±13
±14
±15
±16
10
11
Supply Voltage (V)
12
13
14
15
16
V+ Supply Voltage (V)
Power Supply Currents vs. Switching Frequency
1 mA
10 mA
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 5 V, 50% D Cycle
100 nA
Supply Current vs. Temperature
V+ = 16.5 V, V– = –16.5 V
VL = 5 V, VIN = 0 V
1 mA
10 nA
I SUPPLY
I SUPPLY
100 mA
I+, I–
10 mA
I+, I–
1 nA
100 pA
IL
IGND
10 pA
1 mA
1 pA
100 nA
100
1k
10 k
100 k
f – Frequency (Hz)
6
1M
10 M
0.1 pA
–55 –40 –20
0
20
40
60
80
100 120
Temperature (_C)
Siliconix
S-52880—Rev. D, 28-Apr-97
DG417/418/419
Test Circuits
VO is the steady state output with the switch on.
+5 V
+15 V
Logic
Input
VL
V+
D
S
10 V
0V
RL
300 V–
CL
35 pF
–15 V
CL (includes fixture and stray capacitance)
tOFF
Switch
Input
VS
Switch
Output
0V
VO
90%
tON
Note: Logic input waveform is inverted for switches that have
the opposite logic sense.
RL
VO = VS
tr <20 ns
tf <20 ns
50%
VO
IN
GND
3V
RL + rDS(on)
Figure 2. Switching Time (DG417/418)
+5 V
+15 V
Logic
Input
VL
VS1
VS2
3V
V+
S1
0V
D
VO
S2
RL
300 IN
GND
tr <20 ns
tf <20 ns
CL
35 pF
VS1 = VS2
VO
Switch
Output
V–
90%
0V
tD
tD
CL (includes fixture and stray capacitance)
–15 V
Figure 3. Break-Before-Make (DG419)
+5 V
VL
VS1
VS2
+15 V
V+
S1
D
VO
Logic
Input
3V
0V
S2
RL
300 IN
GND
V–
–15 V
tr <20 ns
tf <20 ns
50%
tTRANS
CL
35 pF
tTRANS
VS1
V01
90%
Switch
Output
VS2
V02
10%
CL (includes fixture and stray capacitance)
VO = VS
RL
RL + rDS(on)
Figure 4. Transition Time (DG419)
Siliconix
S-52880—Rev. D, 28-Apr-97
7
DG417/418/419
Test Circuits (Cont’d)
Rg
+5 V
+15 V
VL
S
V+
D
DVO
VO
VO
IN
Vg
INX
OFF
CL
10 nF
3V
GND
ON
V–
OFF
Q = DVO x CL
–15 V
Figure 5. Charge Injection
C
+5 V
+15 V
VL
V+
D
C
+5 V
S1
VS
C
C
Rg = 50 W
50 W
VO
S2
RL
0.8 V
+15 V
VL
V+
S
VS
VO
D
Rg = 50 W
IN
GND
GND
C
V–
RL
IN
0V, 2.4 V
V–
–15 V
–15 V
XTALK Isolation = 20 log
C = RF bypass
C
VS
Off Isolation = 20 log
VO
Figure 6. Crosstalk (DG419)
Figure 7. Off Isolation
+5 V
+15 V
C
C
VL
V+
S
VS
VS
VO
D
VO
Rg = 50 W
0V, 2.4 V
RL
IN
GND
V–
C
–15 V
Figure 8. Insertion Loss
8
Siliconix
S-52880—Rev. D, 28-Apr-97
DG417/418/419
Test Circuits (Cont’d)
+5 V
+15 V
+15 V
C
C
VL
NC
C
V+
S
V+ S2
DG417/418
DG419
Meter
V, 2.4 V IN
GND
V–
D2
GND
f = 1 MHz
C
Meter
0 V, 2.4 V IN
HP4192A
Impedance
Analyzer
or Equivalent
D
S1
–15 V
HP4192A
Impedance
Analyzer
or Equivalent
D1
V–
C
f = 1 MHz
–15 V
Figure 9. Source/Drain Capacitances
Applications
Switched Signal Powers Analog Switch
The analog switch in Figure 10 derives power from its input
signal, provided the input signal amplitude exceeds 4 V and
its frequency exceeds 1 kHz.
This circuit is useful when signals have to be routed to either
of two remote loads. Only three conductors are required:
one for the signal to be switched, one for the control signal
and a common return.
A positive input pulse turns on the clamping diode D1 and
charges C1. The charge stored on C1 is used to power the
chip; operation is satisfactory because the switch requires
less than 1 mA of stand-by supply current. Loading of the
signal source is imperceptible. The DG419’s on-resistance
is a low 100 W for a 5-V input signal.
D1
V+
Input
C1
0.01 mF
VL
S1
D
VOUT
S2
RL2
10 kW
IN
Control
DG419
GND
V–
RL1
10 kW
Figure 10. Switched Signal Powers Remote
SPDT Analog Switch
Siliconix
S-52880—Rev. D, 28-Apr-97
9
DG417/418/419
Applications (Cont’d)
Micropower UPS Transfer Switch
change of state in the analog switch, restoring normal
operation.
When VCC drops to 3.3 V, the DG417 changes states,
closing SW1 and connecting the backup cell, as shown in
Figure 11. D1 prevents current from leaking back towards
the rest of the circuit. Current consumption by the CMOS
analog switch is around 100 pA; this ensures that most of the
power available is applied to the memory, where it is really
needed. In the stand-by mode, hundreds of mA are sufficient
to retain memory data.
Programmable Gain Amplifier
When the 5-V supply comes back up, the resistor divider
senses the presence of at least 3.5 V, and causes a new
The DG419, as shown in Figure 12, allows accurate gain
selection in a small package. Switching into virtual ground
reduces distortion caused by rDS(on) variation as a function
of analog signal amplitude.
GaAs FET Driver
The DG419, as shown in Figure 13 may be used as a GaAs
FET driver. It translates a TTL control signal into –8-V, 0-V
level outputs to drive the gate.
V+
D1
SW1
D
VCC
(5 V)
R1
VSENSE
453 kW
VL
S
+
DG417
Memory
–
IN
GND
R2
383 kW
3 V Li Cell
V–
Figure 11. Micropower UPS Circuit
+5 V
DG419
S1
S2
R1
VL
R2
V+
GaAs FET
S1
IN
D
S2
VOUT
D
VIN
DG419
5V
–
VOUT
GND
V–
+
–8 V
Figure 12. Programmable Gain Amplifier
10
Figure 13. GaAs FET Driver
Siliconix
S-52880—Rev. D, 28-Apr-97