ADPOW ARF465B N-channel enhancement mode power mosfet Datasheet

ARF465A
ARF465B
D
G
S
TO-247
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
300V 150W
60MHz
The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull
scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
• Specified 300 Volt, 40.68 MHz Characteristics:
•
Output Power = 150 Watts.
•
Gain = 13dB (Class C)
•
Efficiency = 75%
• Low Cost Common Source RF Package.
• Low Vth thermal coefficient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
ARF465A/B
VDSS
Drain-Source Voltage
1200
VDGO
Drain-Gate Voltage
1200
ID
UNIT
Volts
Continuous Drain Current @ TC = 25°C
6
Amps
VGS
Gate-Source Voltage
±30
Volts
PD
Total Power Dissipation @ TC = 25°C
250
Watts
Junction to Case
0.50
°C/W
RθJC
TJ,TSTG
TL
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
1200
VDS(ON) On State Drain Voltage
IDSS
IGSS
1
TYP
MAX
Volts
(I D(ON) = 3A, VGS = 10V)
7
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
gfs
Forward Transconductance (VDS = 25V, ID = 3A)
3
VGS(TH)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
3
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
nA
mhos
5
Volts
7-2003
BVDSS
Characteristic / Test Conditions
050-4921 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
ARF465A/B
Test Conditions
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
td(off)
tf
MIN
TYP
MAX
1200
1500
VDS = 200V
80
100
f = 1 MHz
30
50
VGS = 15V
7
15
VDD = 0.5 VDSS
5
10
ID = ID[Cont.] @ 25°C
21
34
RG = 1.6Ω
12
25
MAX
VGS = 0V
Rise Time
Turn-off Delay Time
Fall Time
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
GPS
η
ψ
Characteristic
Common Source Amplifier Power Gain
Test Conditions
MIN
TYP
f = 40.68 MHz
13
15
dB
70
75
%
VGS = 0V
Drain Efficiency
Electrical Ruggedness VSWR 6:1
VDD = 300V
Pout = 150W
UNIT
No Degradation in Output Power
1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
10,000
25
Class C
VDD = 300V
CAPACITANCE (pf)
GAIN (dB)
5000
Pout = 150W
20
15
10
10
0.1
1
10
100 300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
40 50 60 70
80 90 100
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
30
24
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
8
6
TJ = -55°C
TJ = +25°C
TJ = +125°C
0
0
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
OPERATION HERE
LIMITED BY RDS (ON)
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
7-2003
10
050-4921 Rev A
Coss
100
Crss
0
10 20
2
500
50
5
4
Ciss
1000
10
5
100uS
1mS
1
.5
.1
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
DC
1.2
ARF465A/B
10
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
VGS=15V, 10V, 7V
1.1
1
0.9
0.8
0.7
6.5V
8
6V
6
5.5V
4
5V
2
4.5V
0
0.6
-50
-25
0
25
50
75
100 125
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.50
0.9
0.40
0.7
0.30
0.5
Note:
PDM
0.20
0.3
t1
t2
0
10-5
Duty Factor D = t1/t2
0.1
0.05
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL
Junction
temp. ( ”C)
Power
(Watts)
0.0284
0.00155F
0.165
0.00934F
0.307
0.128F
Case temperature
Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
2.0
13.5
27
40
65
Zin (Ω)
ZOL (Ω)
21.4 -j 8.7
2.6 -j 7.3
.54 -j 2.9
.22 -j .69
.31 +j 1.65
206 -j 45
68 -j 99
22 -j 64
10.5 -j 44
4.4 -j 27
Zin - Gate shunted with 25Ω
IDQ = 100mA
ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 300V
7-2003
0.10
050-4921 Rev A
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.60
ARF465A/B
Bias
0 - 6V
+
-
C7 L5
R1
C9
L1
C2
+
300V
-
L4
C6
RF
Input
C8
L2
R2
C1
C4
L3
DUT
RF
Output
C3
40.68 MHz Test Circuit
C1 - 1000pF 100V chip ATC 700B
C2-C5 - Arco 463 Mica trimmer
C6-C8 - .01 µF 500V ceramic chip
C9 - 2200 pF COG 500 V chip
L1 - 4t #20 AWG .25"ID .3"L ~110 nH
L2 - 2t #20 AWG .25"ID .3"L ~ 25 nH
L3-- 4t #16 AWG .4" ID .5"L ~290 nH
L4 -- 25t #24 AWG .35"ID ~2uH
L5-- VK200-4B ferrite choke 3uH
R1-R2 -- 51 Ohm 0.5W Carbon
DUT = ARF465A/B
TO-247 Package Outline
Top View
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Source
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
7-2003
1.01 (.040)
1.40 (.055)
050-4921 Rev A
Dimensions in Millimeters and (Inches)
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
2.21 (.087)
2.59 (.102)
Device
ARF - A
ARF - B
Gate
Drain
Source
Source
Drain
Gate
5.45 (.215) BSC
2-Plcs.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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