ARF465A ARF465B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz. • Specified 300 Volt, 40.68 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class C) • Efficiency = 75% • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF465A/B VDSS Drain-Source Voltage 1200 VDGO Drain-Gate Voltage 1200 ID UNIT Volts Continuous Drain Current @ TC = 25°C 6 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 250 Watts Junction to Case 0.50 °C/W RθJC TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 1200 VDS(ON) On State Drain Voltage IDSS IGSS 1 TYP MAX Volts (I D(ON) = 3A, VGS = 10V) 7 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 gfs Forward Transconductance (VDS = 25V, ID = 3A) 3 VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 4 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT nA mhos 5 Volts 7-2003 BVDSS Characteristic / Test Conditions 050-4921 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol ARF465A/B Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN TYP MAX 1200 1500 VDS = 200V 80 100 f = 1 MHz 30 50 VGS = 15V 7 15 VDD = 0.5 VDSS 5 10 ID = ID[Cont.] @ 25°C 21 34 RG = 1.6Ω 12 25 MAX VGS = 0V Rise Time Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 40.68 MHz 13 15 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 6:1 VDD = 300V Pout = 150W UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 10,000 25 Class C VDD = 300V CAPACITANCE (pf) GAIN (dB) 5000 Pout = 150W 20 15 10 10 0.1 1 10 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 40 50 60 70 80 90 100 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 30 24 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 8 6 TJ = -55°C TJ = +25°C TJ = +125°C 0 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics OPERATION HERE LIMITED BY RDS (ON) ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 7-2003 10 050-4921 Rev A Coss 100 Crss 0 10 20 2 500 50 5 4 Ciss 1000 10 5 100uS 1mS 1 .5 .1 10mS TC =+25°C TJ =+150°C SINGLE PULSE 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area DC 1.2 ARF465A/B 10 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) VGS=15V, 10V, 7V 1.1 1 0.9 0.8 0.7 6.5V 8 6V 6 5.5V 4 5V 2 4.5V 0 0.6 -50 -25 0 25 50 75 100 125 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 0.50 0.9 0.40 0.7 0.30 0.5 Note: PDM 0.20 0.3 t1 t2 0 10-5 Duty Factor D = t1/t2 0.1 0.05 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 RC MODEL Junction temp. ( ”C) Power (Watts) 0.0284 0.00155F 0.165 0.00934F 0.307 0.128F Case temperature Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 Zin (Ω) ZOL (Ω) 21.4 -j 8.7 2.6 -j 7.3 .54 -j 2.9 .22 -j .69 .31 +j 1.65 206 -j 45 68 -j 99 22 -j 64 10.5 -j 44 4.4 -j 27 Zin - Gate shunted with 25Ω IDQ = 100mA ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 300V 7-2003 0.10 050-4921 Rev A Z JC, THERMAL IMPEDANCE (°C/W) θ 0.60 ARF465A/B Bias 0 - 6V + - C7 L5 R1 C9 L1 C2 + 300V - L4 C6 RF Input C8 L2 R2 C1 C4 L3 DUT RF Output C3 40.68 MHz Test Circuit C1 - 1000pF 100V chip ATC 700B C2-C5 - Arco 463 Mica trimmer C6-C8 - .01 µF 500V ceramic chip C9 - 2200 pF COG 500 V chip L1 - 4t #20 AWG .25"ID .3"L ~110 nH L2 - 2t #20 AWG .25"ID .3"L ~ 25 nH L3-- 4t #16 AWG .4" ID .5"L ~290 nH L4 -- 25t #24 AWG .35"ID ~2uH L5-- VK200-4B ferrite choke 3uH R1-R2 -- 51 Ohm 0.5W Carbon DUT = ARF465A/B TO-247 Package Outline Top View 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 7-2003 1.01 (.040) 1.40 (.055) 050-4921 Rev A Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 2.21 (.087) 2.59 (.102) Device ARF - A ARF - B Gate Drain Source Source Drain Gate 5.45 (.215) BSC 2-Plcs. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.