MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B C F K Q - DIA. (2 TYP.) E2 G2 F M J C2E1 E2 N G1 E1 D C1 R S - M5 THD (3 TYP.) (3 TYP.) R R H TAB#110 t=0.5 H L P E G G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Inches Millimeters A 3.70 94.0 K 0.67 17.0 B 3.150±0.01 80.0±0.25 L 0.63 16.0 C 1.57 40.0 M 0.51 13.0 Dimensions D 1.34 34.0 N 0.47 12.0 E 1.22 Max. 31.0 Max. P 0.28 7.0 F 0.90 23.0 Q 0.256 Dia. Dia. 6.5 G 0.85 21.5 R 0.16 4.0 H 0.79 20.0 S M5 Metric M5 J 0.71 18.0 Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM100DY12H is a 600V (VCES), 100 Ampere Dual IGBT Module. Type CM Current Rating Amperes VCES Volts (x 50) 100 12 Sep.1998 MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM100DY-12H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 100 Amperes ICM 200* Amperes Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) IE 100 Amperes Peak Emitter Current** IEM 200* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc 400 Watts Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N·m Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N·m Weight – 190 Grams Viso 2500 Vrms Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V – – 1.0 mA IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V – 2.1 2.8** Volts IC = 100A, VGE = 15V, Tj = 150°C – 2.15 – Volts Gate Leakage Current Total Gate Charge QG VCC = 300V, IC = 100A, VGE = 15V – 300 – nC Emitter-Collector Voltage VEC IE = 100A, VGE = 0V – – 2.8 Volts Min. Typ. Max. Units – – 10 nF – – 3.5 nF – – 2 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Times Fall Time Test Conditions VGE = 0, VCE = 10V – – 120 ns tr VCC = 300V, IC = 100A, – – 300 ns td(off) VGE1 = VGE2 = 15V, RG = 6.3Ω – – 200 ns – – 300 ns tf Diode Reverse Recovery Time trr IE = 100A, diE/dt = –200A/µs – – 110 ns Diode Reverse Recovery Charge Qrr IE = 100A, diE/dt = –200A/µs – 0.27 – µC Test Conditions Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.31 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.70 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.075 °C/W Sep.1998 MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE 200 VGE = 20V 15 150 11 100 10 50 9 7 VCE = 10V Tj = 25°C Tj = 125°C 150 100 50 8 0 0 0 2 4 6 8 10 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 4 8 12 16 0 20 100 150 200 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 102 Tj = 25°C IC = 200A 6 IC = 100A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) 8 EMITTER CURRENT, IE, (AMPERES) Tj = 25°C 102 101 Cies Coes 100 VGE = 0V IC = 40A 10-1 10-1 101 4 8 12 16 0 20 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 103 tf 3 td(off) 2 102 td(on) 7 5 3 tr 2 2 3 5 7 101 VCC = 300V VGE = ±15V RG = 6.3Ω 2 3 5 7 102 COLLECTOR CURRENT, IC, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) Tj = 125°C 101 0 10 0.8 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 7 Tj = 25°C 5 7 5 3 3 2 2 102 trr 101 7 5 lrr 7 5 3 3 2 2 101 0 10 2 3 5 7 101 100 2 3 5 7 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 102 –di/dt = 200A/µs Cres 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 0 7 5 50 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 200 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 100A 16 VCC = 200V 12 VCC = 300V 8 4 0 0 100 200 300 400 500 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM100DY-12H 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.31°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.7°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998