ADPOW APTM50DHM65T Asymmetrical - bridge mosfet power module Datasheet

APTM50DHM65T
Asymmetrical - Bridge
MOSFET Power Module
VBUS
VBUS SENSE
Q1
CR3
VDSS = 500V
RDSon = 65mW max @ Tj = 25°C
ID = 51A @ Tc = 25°C
Application
· Welding converters
· Switched Mode Power Supplies
· Switched Reluctance Motor Drives
G1
S1
OUT1
OUT2
Q4
CR2
G4
0/VBU S SENSE
S4
NTC1
0/VBU S
VBUS
SENSE
NTC2
G4
S4
VBUS
0/VBUS
S1
0/VBUS
SENSE
G1
OUT2
OUT1
NTC2
NTC1
Features
· Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Low profile
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
51
38
204
±30
65
390
51
50
3000
Unit
V
A
V
mW
W
A
May, 2004
ID
Parameter
Drain - Source Breakdown Voltage
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM50DHM65T – Rev 2
Symbol
VDSS
APTM50DHM65T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
VGS = 0V, ID = 250µA
Min
500
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 500V
VGS = 0V,VDS= 400V
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 10V, ID = 25.5A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Typ
Tj = 25°C
Tj = 125°C
3
Max
Unit
V
100
500
65
5
±100
mW
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 250V
ID = 51A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
Eon
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
pF
nC
40
70
21
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 51A
RG = 3W
Rise Time
Typ
7000
1400
90
140
38
ns
75
93
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 51A, RG = 3Ω
1035
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 51A, RG = 3Ω
1556
µJ
845
µJ
1013
Diode ratings and characteristics
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt = 200A/µs
IF = 60A
VR = 400V
di/dt = 200A/µs
Min
Tj = 125°C
Typ
60
1.6
1.9
1.4
Tj = 25°C
130
Tj = 125°C
170
Tj = 25°C
220
Tj = 125°C
920
Tc = 70°C
Max
Unit
A
1.8
V
ns
May, 2004
VF
Test Conditions
50% duty cycle
IF = 60A
IF = 120A
IF = 60A
nC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
APT website – http://www.advancedpower.com
2–6
APTM50DHM65T – Rev 2
Symbol Characteristic
Maximum Average Forward Current
IF(AV)
APTM50DHM65T
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Typ
Transistor
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
2500
-40
-40
-40
Max
0.32
0.9
Unit
°C/W
V
150
125
100
4.7
160
M5
°C
N.m
g
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
RT =
Min
Typ
68
4080
Max
Unit
kW
K
R 25
é
æ 1
1 öù T: Thermistor temperature
- ÷÷ú RT: Thermistor value at T
exp ê B25 / 85 çç
è T25 T øû
ë
APT website – http://www.advancedpower.com
3–6
APTM50DHM65T – Rev 2
May, 2004
Package outline
APTM50DHM65T
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
ID, Drain Current (A)
VGS=10&15V
7V
120
6.5V
80
6V
40
0
0
5V
5
10
15
20
VDS, Drain to Source Voltage (V)
100
75
TJ=25°C
50
25
TJ=125°C
0
25
TJ=-55°C
2
4
6
8
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.1
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
125
0
60
Normalized to
VGS=10V @ 25.5A
1.05
ID, DC Drain Current (A)
VGS=10V
1
VGS=20V
0.95
0.9
50
40
30
20
10
0
10
20
30
40
50
ID, Drain Current (A)
60
25
50
75
100
125
TC, Case Temperature (°C)
150
May, 2004
0
APT website – http://www.advancedpower.com
4–6
APTM50DHM65T – Rev 2
ID, Drain Current (A)
160
8V
5.5V
RDS(on) Drain to Source ON Resistance
Transfert Characteristics
150
200
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
25
50 75 100 125 150
Maximum Safe Operating Area
1000
1.2
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
1.0
0.9
0.8
0.7
100 us
limited by RDSon
100
1 ms
10
10 ms
1
Single pulse
TJ=150°C
100 ms
0.1
0.6
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Ciss
10000
Coss
1000
Crss
100
10
10
20
30
40
VDS, Drain to Source Voltage (V)
50
14
VDS=100V
ID=51A
TJ=25°C
12
VDS=250V
10
VDS=400V
8
6
4
2
0
0
25
50
75
100 125 150 175
Gate Charge (nC)
May, 2004
0
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
VGS=10V
ID= 25.5A
APT website – http://www.advancedpower.com
5–6
APTM50DHM65T – Rev 2
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50DHM65T
APTM50DHM65T
Rise and Fall times vs Current
160
70
140
td(off)
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
60
50
40
30
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
120
tr and tf (ns)
td(on) and td(off) (ns)
Delay Times vs Current
80
td(on)
100
80
tr
60
40
20
20
0
10
10
20
30
40
50
60
70
80
10
20
ID, Drain Current (A)
70
80
5
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
2.5
2
Switching Energy (mJ)
Switching Energy (mJ)
30
40
50
60
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
3
Eon
1.5
Eoff
1
0.5
VDS=333V
ID=51A
TJ=125°C
L=100µH
4
3
Eoff
Eon
2
1
0
0
10
20
30 40 50 60
ID, Drain Current (A)
70
0
80
Operating Frequency vs Drain Current
IDR, Reverse Drain Current (A)
VDS=333V
D=50%
RG=3Ω
TJ=125°C
350
300
250
200
150
100
50
0
15
20 25 30 35
ID, Drain Current (A)
10 15 20 25 30 35 40 45
40
45
Source to Drain Diode Forward Voltage
1000
100
TJ=150°C
TJ=25°C
10
1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM50DHM65T – Rev 2
May, 2004
10
5
Gate Resistance (Ohms)
400
Frequency (kHz)
tf
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