APTM50DHM65T Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 500V RDSon = 65mW max @ Tj = 25°C ID = 51A @ Tc = 25°C Application · Welding converters · Switched Mode Power Supplies · Switched Reluctance Motor Drives G1 S1 OUT1 OUT2 Q4 CR2 G4 0/VBU S SENSE S4 NTC1 0/VBU S VBUS SENSE NTC2 G4 S4 VBUS 0/VBUS S1 0/VBUS SENSE G1 OUT2 OUT1 NTC2 NTC1 Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 51 38 204 ±30 65 390 51 50 3000 Unit V A V mW W A May, 2004 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50DHM65T – Rev 2 Symbol VDSS APTM50DHM65T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 250µA Min 500 Zero Gate Voltage Drain Current VGS = 0V,VDS= 500V VGS = 0V,VDS= 400V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 10V, ID = 25.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Typ Tj = 25°C Tj = 125°C 3 Max Unit V 100 500 65 5 ±100 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 250V ID = 51A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v pF nC 40 70 21 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 51A RG = 3W Rise Time Typ 7000 1400 90 140 38 ns 75 93 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 51A, RG = 3Ω 1035 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 51A, RG = 3Ω 1556 µJ 845 µJ 1013 Diode ratings and characteristics Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A VR = 400V di/dt = 200A/µs IF = 60A VR = 400V di/dt = 200A/µs Min Tj = 125°C Typ 60 1.6 1.9 1.4 Tj = 25°C 130 Tj = 125°C 170 Tj = 25°C 220 Tj = 125°C 920 Tc = 70°C Max Unit A 1.8 V ns May, 2004 VF Test Conditions 50% duty cycle IF = 60A IF = 120A IF = 60A nC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–6 APTM50DHM65T – Rev 2 Symbol Characteristic Maximum Average Forward Current IF(AV) APTM50DHM65T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ Transistor Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink 2500 -40 -40 -40 Max 0.32 0.9 Unit °C/W V 150 125 100 4.7 160 M5 °C N.m g Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = Min Typ 68 4080 Max Unit kW K R 25 é æ 1 1 öù T: Thermistor temperature - ÷÷ú RT: Thermistor value at T exp ê B25 / 85 çç è T25 T øû ë APT website – http://www.advancedpower.com 3–6 APTM50DHM65T – Rev 2 May, 2004 Package outline APTM50DHM65T Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics ID, Drain Current (A) VGS=10&15V 7V 120 6.5V 80 6V 40 0 0 5V 5 10 15 20 VDS, Drain to Source Voltage (V) 100 75 TJ=25°C 50 25 TJ=125°C 0 25 TJ=-55°C 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.1 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 125 0 60 Normalized to VGS=10V @ 25.5A 1.05 ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.95 0.9 50 40 30 20 10 0 10 20 30 40 50 ID, Drain Current (A) 60 25 50 75 100 125 TC, Case Temperature (°C) 150 May, 2004 0 APT website – http://www.advancedpower.com 4–6 APTM50DHM65T – Rev 2 ID, Drain Current (A) 160 8V 5.5V RDS(on) Drain to Source ON Resistance Transfert Characteristics 150 200 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 25 50 75 100 125 150 Maximum Safe Operating Area 1000 1.2 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 100 us limited by RDSon 100 1 ms 10 10 ms 1 Single pulse TJ=150°C 100 ms 0.1 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 10 20 30 40 VDS, Drain to Source Voltage (V) 50 14 VDS=100V ID=51A TJ=25°C 12 VDS=250V 10 VDS=400V 8 6 4 2 0 0 25 50 75 100 125 150 175 Gate Charge (nC) May, 2004 0 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID= 25.5A APT website – http://www.advancedpower.com 5–6 APTM50DHM65T – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature RDS(on), Drain to Source ON resistance (Normalized) APTM50DHM65T APTM50DHM65T Rise and Fall times vs Current 160 70 140 td(off) VDS=333V RG=3Ω TJ=125°C L=100µH 60 50 40 30 VDS=333V RG=3Ω TJ=125°C L=100µH 120 tr and tf (ns) td(on) and td(off) (ns) Delay Times vs Current 80 td(on) 100 80 tr 60 40 20 20 0 10 10 20 30 40 50 60 70 80 10 20 ID, Drain Current (A) 70 80 5 VDS=333V RG=3Ω TJ=125°C L=100µH 2.5 2 Switching Energy (mJ) Switching Energy (mJ) 30 40 50 60 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 3 Eon 1.5 Eoff 1 0.5 VDS=333V ID=51A TJ=125°C L=100µH 4 3 Eoff Eon 2 1 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 0 80 Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=333V D=50% RG=3Ω TJ=125°C 350 300 250 200 150 100 50 0 15 20 25 30 35 ID, Drain Current (A) 10 15 20 25 30 35 40 45 40 45 Source to Drain Diode Forward Voltage 1000 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM50DHM65T – Rev 2 May, 2004 10 5 Gate Resistance (Ohms) 400 Frequency (kHz) tf