BC307…BC308 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol BC307 BC308 Unit Collector Base Voltage -VCBO 50 30 V Collector Emitter Voltage -VCEO 45 25 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 100 mA Total Power Dissipation Ptot 500 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 2 mA Current Gain Group Collector Base Cutoff Current at -VCB = 50 V at -VCB = 30 V Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 2 mA A B C BC307 BC308 BC307 BC308 Symbol Min. Max. Unit hFE hFE hFE 120 180 380 220 460 800 - -ICBO 15 15 - nA -V(BR)CEO 45 25 -V(BR)EBO 5 - V -VCE(sat) - 0.3 0.6 V -VBE(on) 0.55 0.7 V fT 100 - MHz Ccb - 6 pF Current Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz Collector Base Capacitance at -VCB = 10 V, f = 1 MHz V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007 BC307…BC308 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007