ON BAS21SLT1G Dual series high voltage switching diode Datasheet

BAS21SLT1
Preferred Device
Dual Series High Voltage
Switching Diode
Features
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: Class 1
•
http://onsemi.com
ESD Rating − Machine Model: Class B
Pb−Free Package is Available
ANODE
1
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
Value
Unit
VR
250
Vdc
VRRM
250
Vdc
IF
225
mAdc
IFM(surge)
625
mAdc
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RJA
556
°C/W
PD
300
mW
2.4
mW/°C
JT M
SOT−23
CASE 318
STYLE 11
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1
JT = Device Code
M = Date Code
ORDERING INFORMATION
Device
BAS21SLT1
RJA
May, 2004 − Rev. 4
MARKING DIAGRAM
3
2
Thermal Resistance,
Junction to Ambient
 Semiconductor Components Industries, LLC, 2004
3
CATHODE/ANODE
1
THERMAL CHARACTERISTICS
Characteristic
CATHODE
2
BAS21SLT1G
Package
Shipping†
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
BAS21SLT1/D
BAS21SLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
−
−
0.1
100
250
−
−
−
1000
1250
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Adc
IR
Reverse Breakdown Voltage
(IBR = 100 Adc)
V(BR)
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 )
trr
−
50
ns
820 +10 V
2.0 k
100 H
tr
0.1 F
IF
tp
IF
t
trr
10%
t
0.1 F
90%
D.U.T.
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
VR
iR(REC) = 3.0 mA
IR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
INPUT SIGNAL
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
1200
25°C
REVERSE CURRENT (nA)
FORWARD VOLTAGE (mV)
TA = −55°C
1000
800
155°C
600
400
200
1
1
10
100
1000
7000
6000
5000
TA = 155°C
4000
3000
6
5
4
3
TA = 25°C
2
1
0
TA = −55°C
1
FORWARD CURRENT (mA)
2
5
10
20
50
REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
http://onsemi.com
2
100 200 300
BAS21SLT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.
A
L
3
1
V
B
2
S
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.99
1.26
0.36
0.50
1.70
2.10
0.10
0.25
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
3
BAS21SLT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
4
For additional information, please contact your
local Sales Representative.
BAS21SLT1/D
Similar pages