Plastic-Encapsulate Diodes FAST SWITCHING DIODES BAV19W/20W/21W FEATURES Fast switching speed Surface mount package ideally suited for automatic insertion MARKING: BAV19W : A8 MAXIMUM RATINGS (TA=25 BAV20W: T2 Non-Repetitive Peak reverse voltage Symbol BAV19W BAV20W BW Unit VRM 120 200 250 V t mi Li ., Co / r hk to i. uc em nd os co 3 mi 87 ak Se 78- w.m KO -3 ww MA 08 :// 40 tp Peak Repetitive Peak reverse voltage VRRM Working Peak Reverse Voltage VRRM ht 250 V 71 106 141 V 400 mA IO 200 mA @=1.0ms IFSM 2.5 A @=1.0s IFSM 0.5 A IFRM 625 mA Pd 500 mW RθJA 250 ℃/W TSTG -65-125 ℃ Average Rectified Output Current Repetitive Peak Forward Current Power Dissipation Ambient 150 IFM Forward Continuous Current Peak forward surge current 100 VR VR(RMS) RMS Reverse Voltage SOD-123 BAV21W: T3 unless otherwise noted) Parameter DC Blocking + - Resistance Junction to Ambient Storage temperature ed ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Max. Unit VF1 1.0 V IF=100mA VF2 1.25 V IF=200mA BAV19W IR 0.1 μA VR=100V BAV20W IR 0.1 μA VR=150V BAV21W IR 0.1 μA VR=200V Capacitance between terminals CT 5 pF VR=0,f=1MHz Reverse Recovery Time trr 50 ns IR=IF=30mA Forward voltage Reverse current Min. Typ. Conditions Irr=0.1*IR,RL=100Ω MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ Page:P2-P1 Plastic-Encapsulate Diodes BAV19W/20W/21W Typical Characteristics t mi Li ., Co / r hk to i. uc em nd os co 3 mi 87 ak Se 78- w.m KO -3 ww MA 08 :// 40 tp ht ed MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ Page:P2-P2