Microsemi APTGT100TA120TPG Triple phase leg fast trench field stop igbt power module Datasheet

APTGT100TA120TPG
VCES = 1200V
IC = 100A @ Tc = 80°C
Triple phase leg
Fast Trench + Field Stop IGBT
Power Module
VBUS3
NTC1
G1
G5
G3
E1
E5
E3
U
V
W
G2
G4
G6
E2
E4
E6
NTC2
0/VBUS1
0/VBUS3
0/VBUS2
VBUS 1
VBUS 2
NTC1
NTC2
G1
0/VBUS 1
U
E1
E3
G5
0/VBUS 3
E5
E2
E4
E6
G2
G4
G6
V
W
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
full bridge
• RoHS Compliant
VBUS 3
G3
0/VBUS 2
R1
TC = 25°C
Max ratings
1200
140
100
200
±20
480
Tj = 125°C
200A @ 1100V
TC = 25°C
TC = 80°C
TC = 25°C
Reverse Bias Safe Operating Area
Unit
V
April, 2009
VBUS2
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGT100TA120TPG – Rev 0
VBUS1
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
APTGT100TA120TPG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Test Conditions
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 100A
Tj = 125°C
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
Min
Typ
1.4
1.7
2.0
5.8
5.0
Max
Unit
250
2.1
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 3.9Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 3.9Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
IC = 100A
Tj = 125°C
RG = 3.9Ω
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Min
Typ
7200
400
300
260
30
420
pF
ns
70
290
50
520
ns
90
10
mJ
10
Reverse diode ratings and characteristics
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Er
Reverse Recovery Energy
VR=1200V
IF = 100A
VGE = 0V
IF = 100A
VR = 600V
di/dt =2000A/µs
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Min
1200
Typ
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
100
1.6
1.6
Tj = 25°C
170
Tj = 125°C
Tj = 25°C
280
9
Tj = 125°C
Tj = 25°C
Tj = 125°C
18
5
9
Max
250
500
Unit
V
µA
A
2.1
V
ns
April, 2009
IRM
Test Conditions
µC
mJ
2-5
APTGT100TA120TPG – Rev 0
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTGT100TA120TPG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B 25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
Min
Typ
Max
0.26
0.48
Unit
T25 = 298.15 K
TC=100°C
RT =
R25
T: Thermistor temperature
1 ⎞⎤ RT: Thermistor value at T
⎡
⎛ 1
− ⎟⎟⎥
exp ⎢ B25 / 85 ⎜⎜
⎝ T25 T ⎠⎦
⎣
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M6
2500
-40
-40
-40
3
°C/W
V
175
125
100
5
250
°C
N.m
g
SP6-P Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGT100TA120TPG – Rev 0
April, 2009
9 places (3:1)
APTGT100TA120TPG
Typical Performance Curve
Output Characteristics (VGE=15V)
200
TJ=125°C
VGE=17V
150
IC (A)
IC (A)
TJ = 125°C
TJ=25°C
150
Output Characteristics
200
100
VGE=13V
VGE=15V
100
VGE=9V
50
50
0
0
0
1
2
VCE (V)
4
0
Transfert Characteristics
200
175
E (mJ)
100
75
50
15
3
4
Eon
Eoff
Er
10
TJ=125°C
2
VCE (V)
VCE = 600V
VGE = 15V
RG = 3.9 Ω
TJ = 125°C
20
TJ=125°C
125
1
Energy losses vs Collector Current
25
TJ=25°C
150
IC (A)
3
Eon
5
25
0
0
5
6
7
8
9
10
11
0
12
25
50
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
25
Eon
200
160
IC (A)
E (mJ)
240
VCE = 600V
VGE =15V
IC = 100A
TJ = 125°C
15
100 125 150 175 200
IC (A)
VGE (V)
20
75
Eoff
10
120
Er
80
5
VGE=15V
TJ=125°C
RG=3.9 Ω
40
0
0
0
5
10
15
20
Gate Resistance (ohms)
25
0
300
600
900
VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.2
0.7
0.15
0.5
0.1
0.3
0.05
IGBT
April, 2009
0.25
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGT100TA120TPG – Rev 0
Thermal Impedance (°C/W)
0.3
APTGT100TA120TPG
Forward Characteristic of diode
200
VCE=600V
D=50%
RG=3.9 Ω
TJ=125°C
Tc=75°C
50
ZVS
40
ZCS
TJ=25°C
150
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
60
30
TJ=125°C
100
20
50
10
TJ=125°C
Hard
switching
0
0
0
20
40
60
80
IC (A)
100
120
0
140
0.4
0.8
1.2
1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.5
0.9
0.4
0.3
Diode
0.7
0.5
0.2
0.3
0.1
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT100TA120TPG – Rev 0
April, 2009
rectangular Pulse Duration (Seconds)
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