Infineon BFN39 Pnp silicon high-voltage transistor Datasheet

BFN39
PNP Silicon High-Voltage Transistors
• Suitable for video output stages in TV sets
4
and switching power supplies
3
2
• High breakdown voltage
1
• Low collector-emitter saturation voltage
• Complementary types: BFN38 (NPN)
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
Type
BFN39
Marking
BFN39 1=B
Pin Configuration
2=C
3=E
4=C
-
Package
-
SOT223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
300
Collector-base voltage
VCBO
300
Emitter-base voltage
VEBO
5
Collector current
IC
200
Peak collector current
ICM
500
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
Ptot
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Value
Unit
V
mA
TS ≤ 124 °C
-65 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
Value
Unit
≤ 17
K/W
1Pb-containing
2For
package may be available upon special request
calculation of R thJA please refer to Application Note Thermal Resistance
1
2007-03-29
BFN39
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
V(BR)CEO
300
-
-
V(BR)CBO
300
-
-
V(BR)EBO
5
-
-
DC Characteristics
Collector-emitter breakdown voltage
V
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 100 µA, IE = 0
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
Collector-base cutoff current
µA
I CBO
VCB = 250 V, IE = 0
-
-
0.1
VCB = 250 V, IE = 0 , T A = 150 °C
-
-
20
-
-
100
Emitter-base cutoff current
I EBO
nA
VEB = 5 V, IC = 0
DC current gain1)
-
h FE
IC = 1 mA, VCE = 10 V
25
-
-
IC = 10 mA, VCE = 10 V
40
-
-
IC = 30 mA, VCE = 10 V
30
-
-
VCEsat
-
-
0.5
VBEsat
-
-
0.9
fT
-
100
-
MHz
Ccb
-
2.5
-
pF
Collector-emitter saturation voltage1)
V
IC = 20 mA, IB = 2 mA
Base emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
AC Characteristics
Transition frequency
IC = 20 MHz, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 30 V, f = 1 MHz
1Pulse
test: t < 300µs; D < 2%
2
2007-03-29
BFN39
DC current gain hFE = ƒ(IC)
VCE = 10 V
10 3
Collector current I C = ƒ(V BE)
VCE = 10V
BFN 37/39
EHP00642
10 3
BFN 37/39
EHP00641
mA
5
ΙC
h FE
10 2
10 2
5
5
10 1
5
10 1
10 0
5
5
10 0
-1
10
5 10
0
5 10
1
5 10
2
mA 10
10 -1
3
0.5
0
ΙC
BFN 37/39
1.5
V BE
Collector cutoff current ICBO = ƒ(TA)
VCBO = 200 V
10 4
nA
V
1.0
Transition frequency fT = ƒ(IC)
VCE = 10 V
EHP00644
10 3
BFN 37/39
EHP00643
MHz
Ι CB0
max
10 3
5
fT
10 2
5
10 2
typ
10 1
5
5
10 0
5
10 -1
0
50
10 1
10 0
˚C 150
100
5
10 1
5
10 2 mA 5
10 3
ΙC
TA
3
2007-03-29
BFN39
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
Total power dissipation Ptot = ƒ(TS)
90
1.8
pF
70
60
P tot
CCB(C EB)
W
1.2
50
0.9
40
CEB
30
0.6
20
0.3
10
CCB
0
0
4
8
12
16
V
0
0
22
VCB(VEB)
15
30
45
60
75
90 105 120
°C 150
TS
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
10 3
BFN 37/39
Ptot max
5
Ptot DC
EHP00254
tp
D=
T
tp
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
4
2007-03-29
Package SOT223
1.6±0.1
6.5 ±0.2
A
0.1 MAX.
3 ±0.1
7 ±0.3
3
2
0.5 MIN.
1
2.3
0.7 ±0.1
B
15˚ MAX.
4
3.5 ±0.2
Package Outline
BFN39
4.6
0.28 ±0.04
0...10˚
0.25 M A
0.25 M B
Foot Print
1.4
4.8
1.4
3.5
1.2 1.1
Marking Layout (Example)
Manufacturer
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
0.3 MAX.
7.55
12
8
Pin 1
1.75
6.8
5
2007-03-29
BFN39
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
6
2007-03-29
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