SUNMATE DFLR1200 Surface mount silicon rectifier diode Datasheet

DFLR1200 - DFLR1600
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 200 - 600V
CURRENT: 1.0 A
Features
!
Glass passivated device
!
Ideal for surface mouted applications
!
Low reverse leakage
!
Metallurgically bonded construction
B
Mechanical Data
C
! Case: SOD-123FL
plastic body over passivated junction
! Terminals : Plated axial leads,
! solderable per MIL-STD-750, Method 2026
!
!
!
E
SOD-123FL
Dim Min Max Typ
A 3.58 3.72 3.65
3
B 2.72 2.78 2.75
C 1.77 1.83 1.80
D
1
1.02
1.08 1.05
E 0.097 1.03 1.00
H 0.13 0.17 0.15
L
0.53 0.57 0.55
All Dimensions in mm
D
H
Polarity : Color band denotes cathode end
Mounting Position : Any
Weight:0.0007 ounce, 0.02 grams
L
E
A
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
TA = 25°C unless otherwise specified
For capacitive load, derate current by 20%.
Symbol
DFLR1200
DFLR1400
DFLR1600
Unit
VRRM
VRWM
VR
200
400
600
V
VR(RMS)
140
280
420
V
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
IFSM
25
A
Forward Voltage
VFM
1.1
V
IRM
3.0
100
mA
CT
10
pF
Average Rectified Output Current (see figure 4)
@ IF = 1.0A
Peak Reverse Leakage Current
at Rated DC Blocking Voltage
@ TA = 25°C
@ TA = 125°C
Typical Total Capacitance (f = 1MHz, VR = 4.0VDC)
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Ambient Air (Note 1)
Thermal Resistance, Junction to Soldering Point (Note 3)
Operating and Storage Temperature Range
Notes:
Symbol
Typ
Max
Unit
RqJA
134
¾
°C/W
RqJS
¾
6
°C/W
Tj, TSTG
¾
-65 to +150
°C
1. Device mounted on 1" x 1", FR-4 PCB; 2 oz. Cu pad layout as shown on Diodes Inc. suggested pad layout document AP02001.pdf. TA = 25°C
2. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
3. Theoretical R qJS calculated from the top center of the die straight down to the PCB/cathode tab solder junction.
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IF, INSTANTANEOUS FORWARD CURRENT (mA)
10,000
10
TA = 150°C
1
1,000
TA = 125°C
TA = 150°C
0.1
TA = 85°C
100
TA = 75°C
0.01
TA = 25°C
TA = 25°C
10
0.001
TA = -55°C
TA = -65°C
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.0001
1.8
25
0
50
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
1.2
12
f = 1MHz
Note 1
IF, DC FORWARD CURRENT (A)
10
CT, TOTAL CAPACITANCE (pF)
100
75
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 2 Typical Reverse Characteristics
8
6
4
2
1.0
0.8
0.6
0.4
0.2
0.0
0
0
10
20
30
40
VR, REVERSE VOLTAGE (V)
Fig. 3 Typical Total Capacitance
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 4 DC Forward Current Derating
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