ZSELEC BAT54C Schottky barrier diode Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
BAT54 / A / C / S
SCHOTTKY BARRIER DIODES
BAT54
BAT54S
3
3
1
BAT54C
2
1
BAT54A
3
2
1
3
2
1
Marking Code: L4
BAT54
BAT54A Marking Code: L42
BAT54C Marking Code: L43
BAT54S Marking Code: L44
SOT-23 Plastic Package
2
Absolute Maximum Ratings1) (Ta = 25OC)
Parameter
Symbol
Limits
Unit
Repetitive peak reverse voltage
VRRM
30
V
Average rectified forward current
IF(AV)
200
mA
Repetitive Peak Forward Current
IFRM
300
mA
Non-repetitive peak forward surge current
at Pulse width=1 second
IFSM
600
mA
Power dissipation
Ptot
290
mW
Thermal resistance junction to ambient air
RθJA
430
Tj
- 55 to + 150
O
Tstg
- 55 to + 150
O
Junction temperature
Storage temperature range
1)
C/W
O
C
C
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Characteristics at Ta = 25OC
Parameter
Symbol
Min.
Max.
-
240
320
400
500
1000
Unit
Forward voltage
at IF = 0.1 mA
at IF = 1 mA
at IF = 10 mA
at IF = 30 mA
at IF = 100 mA
VF
Reverse current
at VR = 25 V
IR
-
2
μA
Breakdown voltage
at IR =10 μA
VR
30
-
V
Total capacitance
at VR = 1 V, f = 1 MHz
Ctot
-
10
pF
trr
-
5
ns
Reverse recovery time
at IF = 10 mA, IR = 10 mA, IRR = 1 mA, RL = 100 Ω
BAT54 / A / C / S
1 of 2
mV
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Z ibo Seno Electronic Engineering Co., Ltd.
BAT54 / A / C / S
Typical Variation of Reverse
Current at Various Temperatures
Typical Forward Voltage
Forward Current
at Various Temperatures
1000
1000
Tj =125 oC
100
o
A
Tj =125 C
I R in
I F in mA
100
o
Tj =- 40 C
10
Tj =25 o C
1
Tj =100 oC
10
Tj =75 o C
Tj =50 oC
1
0.1
0.1
Tj =25 oC
0.01
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
25
30
VR in V
VF in V
Typical Capacitance oC vs.
Reverse Applied Voltage V R
14
Cin pF
12
10
8
6
4
2
0
0
4
8
12
16
20
24
28
VR in V
BAT54 / A / C / S
2 of 2
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