CEP4060AL/CEB4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A,RDS(ON) = 75mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G G D S ABSOLUTE MAXIMUM RATINGS Parameter CEP SERIES TO-220 Tc = 25 C unless otherwise noted Symbol Limit 60 Units V VGS ±20 V ID 17 12 68 A Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a IDM A A 43 W 0.3 W/ C TJ,Tstg -65 to 175 C Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range S Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 3.5 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W Rev 2. 2010.Sep http://www.cetsemi.com Details are subject to change without notice . 1 CEP4060AL/CEB4060AL Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 60V, VGS = 0V 25 µA IGSSF VGS = 16V, VDS = 0V 100 nA IGSSR VGS = -16V, VDS = 0V -100 nA Off Characteristics V On Characteristics b Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forward Transconductance Dynamic Characteristics gFS VGS = VDS, ID = 250µA 1.5 2 V VGS = 10V, ID = 12A 1 60 75 mΩ VGS = 5V, ID = 6A 70 90 mΩ VDS = 10V, ID = 6A 10 S 405 pF 120 pF 30 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 30V, ID = 15A, VGS = 5V, RGEN = 51Ω 10 13 ns 7 9 ns 84 110 ns Turn-Off Fall Time tf 22 29 ns Total Gate Charge Qg 12 17 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 48V, ID = 15A, VGS = 10V 1.1 nC 3.2 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 6A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 0.9 15 A 1.3 V CEP4060AL/CEB4060AL 28 VGS=10,9,8,7,6,5,4V 25 C 10 ID, Drain Current (A) ID, Drain Current (A) 12 8 VGS=3V 6 4 2 0 0 1 2 2 3 4 5 6 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 450 300 Coss 150 Crss 0 5 10 15 20 25 2.6 2.2 ID=15A VGS=10V 1.8 1.4 1.0 0.6 0.2 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 1 VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage -55 C VDS, Drain-to-Source Voltage (V) 600 1.2 TJ=125 C 7 0 750 1.3 14 3 900 0 21 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 15 VDS=48V ID=15A RDS(ON)Limit 12 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP4060AL/CEB4060AL 9 6 3 0 100µs 10 4 8 12 16 1ms 10ms DC 10 0 1 10ms TC=25 C TJ=175 C Single Pulse 0 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 0.1 -1 PDM 0.05 t1 0.02 0.01 Single Pulse 10 -2 10 -2 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 3 10 4 2