IXYS DSEI30 Fast recovery epitaxial diode (fred) Datasheet

Fast Recovery
Epitaxial Diode (FRED)
DSEI 30
VRSM
A
V
640
VRRM
Type
C
IFAVM = 37 A
VRRM = 600 V
trr
= 35 ns
TO-247 AD
V
600
C
DSEI 30-06A
A
C
A = Anode, C = Cathode
Test Conditions
Maximum Ratings
IFRMS
IFAVM ÿÿ①
IFRM
TVJ = TVJM
TC = 85°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
70
37
375
A
A
A
IFSM
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
300
320
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
260
280
A
A
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
450
420
A2s
A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
340
320
A2s
A2s
-40...+150
150
-40...+150
°C
°C
°C
125
W
Features
●
●
●
●
●
I2t
TVJ
TVJM
Tstg
●
●
Applications
●
●
●
●
Ptot
TC = 25°C
Md
Mounting torque
0.8...1.2
Weight
Nm
6
●
g
●
●
Symbol
Test Conditions
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
Characteristic Values
typ.
max.
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
100
50
7
mA
mA
mA
●
IF = 37 A;
TVJ = 150°C
TVJ = 25°C
VT0
rT
For power-loss calculations only
TVJ = TVJM
RthJC
RthCK
RthJA
1.4
1.6
V
V
1.01
7.1
V
mW
1
35
K/W
K/W
K/W
0.25
trr
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C
35
50
ns
IRM
VR = 350 V; IF = 30 A; -diF/dt = 240 A/ms
L £ 0.05 mH; TVJ = 100°C
10
11
A
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
●
●
VF
International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
●
●
●
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
009
Symbol
1-2
DSEI 30, 600 V
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Dimensions
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
2.2
2.54
0.087
0.102
Fig. 7 Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
2-2
Similar pages